Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures

Matthew Yankowitz; Stefano Larentis; Kyounghwan Kim; Jiamin Xue; Devin McKenzie; Shengqiang Huang; Marina Paggen; Mazhar N. Ali; Robert J. Cava; Emanuel Tutuc; Brian J. LeRoy

doi:10.1021/nl5047736

arXiv · 1411.6597

Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures

Matthew Yankowitz·Stefano Larentis·Kyounghwan Kim·Jiamin Xue·Devin McKenzie·Shengqiang Huang·Marina Paggen·Mazhar N. Ali·Robert J. Cava·Emanuel Tutuc·Brian J. LeRoy

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Abstract

The electronic properties of two-dimensional materials such as graphene are extremely sensitive to their environment, especially the underlying substrate. Planar van der Waals bonded substrates such as hexagonal boron nitride (hBN) have been shown to greatly improve the electrical performance of graphene devices by reducing topographic variations and charge fluctuations compared to amorphous insulating substrates}. Semiconducting transition metal dichalchogenides (TMDs) are another family of van der Waals bonded materials that have recently received interest as alternative substrates to hBN for graphene as well as for components in novel graphene-based device heterostructures. Additionally, their semiconducting nature permits dynamic gate voltage control over the interaction strength with graphene. Through local scanning probe measurements we find that crystalline defects intrinsic to TMDs induce scattering in graphene which results in significant degradation of the heterostructure quality, particularly compared to similar graphene on hBN devices.

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Matthew Yankowitz, Stefano Larentis, Kyounghwan Kim, Jiamin Xue, Devin McKenzie, Shengqiang Huang, Marina Paggen, Mazhar N. Ali, Robert J. Cava, Emanuel Tutuc, Brian J. LeRoy. 2014-11-24. Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures. https://doi.org/10.1021/nl5047736

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