arXiv subjects

Matthew Yankowitz

Publications and source records attributed to Matthew Yankowitz.

At least 19 recordsLinked to original sources

arXiv2026

Signatures of a ferro-Josephson effect in twisted graphene

When a spin-polarized current is driven across a magnetic domain wall, the resulting spin-transfer torque may, beyond a critical threshold, set the wall's moments into precession. This precession modulates the Berry curvature experienced by electrons traversing the wall, producing an electromotive force that is topological in nature and proportional to the precession frequency, mapping precisely onto the DC Josephson effect and leading to the name ferro-Josephson effect. We report signatures consistent with this effect in a twisted graphene van der Waals heterostructure, where spin and valley textures are linked by exchange, Hund's coupling, and spin-orbit interactions. Tuned to fillings where the isospin degeneracy is spontaneously broken, the samples develop a sharp peak in the longitudinal resistance within a fraction of a millitesla of $B_\parallel=0$---a peak that disappears as the current is reduced toward zero. In differential resistance the feature resolves into sharp resonances that disperse with $B_\parallel$ on microtesla and picoampere scales. We argue that these arise from the current-driven precession of spin-domain-wall moments, in competition with the in-plane anisotropy set by a minuscule applied field, and that they establish nonlinear transport as a sensitive probe of isospin domain-wall dynamics at energy scales far below $k_BT$.

cond-mat.mes-hall↗

arXiv2026

Anomalous metal and superconducting phases in rhombohedral graphene

Two-dimensional superconductivity is now well established in graphene-based systems, with many such realizations showing evidence for unconventional pairing. Yet in several of the gate-tuned phases that otherwise exhibit clear signatures of superconductivity, the resistance does not vanish as temperature is lowered, instead saturating at a finite value. Here we report a systematic study of this behavior in rhombohedral graphene on a WSe$_2$ substrate, finding regions of gate space with zero-resistance superconductivity alongside others with finite saturation resistance. At zero magnetic field, these regions appear as isolated pockets in gate space that otherwise exhibit strikingly similar phenomenology, including abrupt transitions to the normal state as temperature, perpendicular magnetic field, and current are raised above critical values. A small in-plane field expands and merges these pockets without qualitatively altering their behavior, producing a sharp boundary at millikelvin base temperature between states of zero or finite resistance. The finite-resistance state reproduces key phenomenology associated with the anomalous metal, a state that has been observed in thin-film superconductors for decades but lacks an accepted theoretical explanation. The tunability and reproducibility of ultra-clean rhombohedral graphene place strong constraints on extrinsic explanations and provide a new platform for understanding this behavior.

cond-mat.mes-hall↗

arXiv2026

Record magnetoresistance, enhanced superconductivity, and fermiology in WTe2

The diverse electronic properties of transition metal chalcogenides can be very sensitive to crystal imperfections. A new crystal growth technique, known as horizontal flux transport, offers a route to improved crystal quality. By refining this technique and applying it to the topological semimetal WTe2, we achieved crystals with an order of magnitude less disorder as determined by electrical transport and scanning tunneling microscopy measurements. At low temperatures these crystals exhibit the largest magnetoresistance reported in a metal. Exfoliated monolayers show quantum oscillations for the first time in the electrostatically doped metallic states, enabling determination of band degeneracies and the valley splitting induced by an electric field. Moreover, they exhibit a gated superconducting dome with a greatly enhanced critical temperature approaching 1.8 K. This advance opens up new avenues for employing WTe2 in topological electronics and gated superconducting devices, and promises comparable breakthroughs with other chalcogenides.

cond-mat.supr-con↗

arXiv2026

Valleytronics in 2D Materials Roadmap

Valleytronics exploits non-equivalent energy extrema in the electronic band structure of crystalline solids -- the valley degree of freedom -- to encode, manipulate, and read out information. The advent of 2D materials, first graphene and then transition-metal dichalcogenides, made valley control practical through optical, electrical, and magnetic routes. This foundation has enabled remarkable progress in recent years spanning established frontiers, such as valley exciton physics and valley Hall effects, as well as emerging directions including lightwave valleytronics, nanophotonic integration, flat-band valleytronics, and spin-valley qubits. In parallel, there are sustained efforts to scale up valleytronic materials and to predict new valleytronic platforms. This Roadmap brings together perspectives from leading experts to chart the key opportunities and challenges at the forefront of 2D material valleytronics. Each section captures a snapshot of progress in a key research area, identifies critical open challenges, and outlines pathways toward future valleytronics breakthroughs.

cond-mat.mes-hall↗

arXiv2026

Microwave Imaging of Edge Conductivity in Graphene at Charge Neutrality and Quantum Hall States

We report local conductivity imaging of edge states in monolayer graphene by millikelvin microwave impedance microscopy (MIM). At the charge-neutrality point, as the magnetic field increases, the local conductivity at the edge drops to zero more slowly than in the bulk. This behavior is consistent with the calculated spatial profile of the charge gap in the canted antiferromagnetic phase. For comparison, we also perform microwave imaging of integer quantum Hall states away from neutrality, which host dissipationless chiral edge channels. The evolution of the edge signal as a function of the bulk gap is fundamentally different between the Landau level filling factor $\nu = 0$ and $|\nu| \ge 1$ integer quantum Hall states, which can be qualitatively explained by numerical simulations and theoretical analysis. Our results provide a comprehensive microscopic picture of the edge and bulk states as the Fermi level moves across the unique Landau-level spectrum of graphene.

cond-mat.str-el↗

arXiv2025

Pervasive spin-triplet superconductivity in rhombohedral graphene

Magnetic fields typically suppress superconductivity once the Zeeman energy exceeds the pairing gap, unless mechanisms such as unconventional pairing, strong spin-orbit coupling, or intrinsic magnetism intervene. Several graphene platforms realize such mitigating routes, exhibiting superconductivity resilient to magnetic fields. Here we report superconductivity in rhombohedral heptalayer graphene that is both induced and stabilized by in-plane magnetic field ($B_{\parallel}$), with critical fields far beyond the Pauli paramagnetic limit. The superconductivity spans a wide gate range and emerges from a sharp zero-field resistive ridge that tracks approximately constant conduction band filling. The presence of zero-field superconductivity and the evolution of the critical temperature with $B_{\parallel}$ are highly gate sensitive. We also observe a weak superconducting diode effect in several distinct regimes within the superconducting phase, including nearby to an integer quantum anomalous Hall state generated by a boron nitride moir\'e superlattice, indicating a potential coexistence of valley imbalance and superconductivity. These results establish several intriguing new properties of spin-triplet, field-induced superconductivity in a thick rhombohedral graphene stack.

cond-mat.mes-hall↗

arXiv2025

Sliding Disassembly of van der Waals Heterostructures

Many recent advances in our understanding of two-dimensional (2D) electron systems stem from van der Waals (vdW) heterostructures. The assembly process relies on the weak bonding across interfaces between layered vdW compounds, making it possible to construct exceptionally clean heterostructures from chemically and structurally distinct materials - a challenging task for traditional thin-film growth techniques. Here we demonstrate an additional, dynamic degree of freedom afforded by vdW interfaces, wherein we use microstructured polymer stamps to disassemble and reconfigure vdW heterostructures by sliding. We apply this technique to alter the dielectric environment of monolayer graphene, perform scanning tunneling microscopy on semiconducting and air-sensitive monolayers, and manipulate strain-sensitive moir\'e materials. Together these demonstrations suggest a new paradigm for assembling and dynamically modifying van der Waals heterostructures, with the potential to reveal new insights into 2D electron systems.

cond-mat.mes-hall↗

arXiv2025

Observation of momentum dependent charge density wave gap in EuTe4

The occurrence of charge density wave (CDW) phenomena, particularly in low dimensional rare-earth chalcogenides, has attracted substantial research interest. Among these materials, EuTe4, which features multiple Te layers and a single Eu-Te layer, serves as a promising platform to study the interplay between CDW order and 4f electron configurations, including magnetism. In this study, First principles based density functional theory (DFT) calculations were carried out to investigate the electronic band structure modifications arising from CDW modulation. Angle resolved photoemission spectroscopy (ARPES) revealed the emergence of a CDW gap at the Fermi level, as well as hybridization induced gap features at lower binding energies. The low lying CDW gap reaches its maximum along the Gamma-Y high-symmetry direction and a minimum along GX reflecting the anisotropic nature of the electronic structure. We also performed low temperature heat capacity measurements in applied magnetic fields near the Neel temperature (TN ~ 6.9 K) to construct the magnetic phase diagram of EuTe4. This study provides valuable insight into the directional dependent evolution of the Fermi surface nesting induced CDW ordering, along with other observed gap openings within this system.

cond-mat.mes-hall↗

arXiv2025

Superconductivity from dual-surface carriers in rhombohedral graphene

Intrinsic rhombohedral graphene hosts an unusual low-energy electronic wavefunction, predominantly localized at its outer crystal faces with negligible presence in the bulk. Increasing the number of graphene layers amplifies the density of states near charge neutrality, greatly enhancing the susceptibility to symmetry-breaking phases. Here, we report superconductivity in rhombohedral graphene arising from an unusual charge-delocalized semimetallic normal state, characterized by coexisting valence- and conduction-band Fermi pockets split to opposite crystal surfaces. In octalayer graphene, the superconductivity appears in five apparently distinct pockets for each sign of an external electric displacement field ($D$). In a moir\'e superlattice sample where heptalayer graphene is aligned on one side to hexagonal boron nitride, two pockets of superconductivity emerge from a single sharp resistive feature. At higher $D$ the same resistive feature additionally induces an $h/e^{2}$-quantized anomalous Hall state at dopings near one electron per moir\'e unit cell. Our findings reveal a novel superconducting regime in multilayer graphene and create opportunities for coupling to nearby topological states.

cond-mat.mes-hall↗

arXiv2025

Observing the Birth of Rydberg Exciton Fermi Polarons on a Moire Fermi Sea

The optical spectra of two-dimensional (2D) semiconductors are dominated by tightly bound excitons and trions. In the low doping limit, trions are often described as three-body quasiparticles consisting of two electrons and one hole or vice versa. However, trions are more rigorously understood as quasiparticles arising from the interaction between an exciton and excitation of the Fermi sea - referred to as exciton Fermi polaron. Here we employ pump-probe spectroscopy to directly observe the formation of exciton Fermi polarons in a model system composed of a WSe2 monolayer adjacent to twisted bilayer graphene (tBLG). Following the pump-injection of Rydberg excitons in WSe2, a time-delayed probe pulse tracks the development of Rydberg exciton Fermi polarons as interactions with localized carriers in the tBLG moire superlattice evolve. Both the exciton Fermi polaron relaxation rate and binding energy are found to increase with electron or hole density. Our findings provide insight into the optical response of fundamental excitations in 2D Van der Waals systems and reveal how many-body interactions give rise to emergent quasiparticles.

cond-mat.mes-hall↗

arXiv2025

Giant elastoresistance in magic-angle twisted bilayer graphene

Strongly correlated and topological phases in moir\'e materials are exquisitely sensitive to lattice geometry at both atomic and superlattice length scales. Twist angle, pressure, and strain directly modify the lattice, and thus act as highly effective tuning parameters. Here we examine electrical transport in twisted bilayer graphene subjected to continuous uniaxial strain. Near the magic angle ($\approx 1.1^{\circ}$), devices exhibit a pronounced elastoresistance that depends on band filling and temperature, with a gauge factor more than two orders of magnitude larger than that of conventional metals. In selected doping regimes the elastoresistance exhibits a Curie-Weiss-like temperature divergence. We discuss possible microscopic origins, including nematic fluctuations and enhanced electronic entropy from fluctuating isospin moments. Our work establishes uniaxial strain as a versatile probe of correlated physics in a moir\'e material.

cond-mat.mes-hall↗

arXiv2025

The 2D Materials Roadmap

Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of this materials class have demonstrated their potential to deliver transformative impact on fundamental research and technological applications across different fields. In this roadmap, we provide an overview of the key aspects of 2D material research and development, spanning synthesis, properties and commercial applications. We specifically present roadmaps for high impact 2D materials, including graphene and its derivatives, transition metal dichalcogenides, MXenes as well as their heterostructures and moir\'e systems. The discussions are organized into thematic sections covering emerging research areas (e.g., twisted electronics, moir\'e nano-optoelectronics, polaritronics, quantum photonics, and neuromorphic computing), breakthrough applications in key technologies (e.g., 2D transistors, energy storage, electrocatalysis, filtration and separation, thermal management, flexible electronics, sensing, electromagnetic interference shielding, and composites) and other important topics (computational discovery of novel materials, commercialization and standardization). This roadmap focuses on the current research landscape, future challenges and scientific and technological advances required to address, with the intent to provide useful references for promoting the development of 2D materials.

cond-mat.mtrl-sci↗

arXiv2025

Low-lying Electronic Structure of Rare-Earth Based Topological Nodal Line Semimetal Candidate DySbTe

Lanthanide (Ln) based LnSbTe materials have garnered significant attention due to rich interplay of long range magnetic ordering and topological properties, driven by unique crystalline symmetry, 4f electron interactions, and pronounced spin-orbit coupling (SOC) effects. DySbTe, as a heavier lanthanide-based member of the LnSbTe family, stands out with its SOC and larger on site interactions on its 4f electrons, which arise due to the heavier Dy element. Here, we present a comprehensive study on the low-temperature bulk physical properties and the electronic structure of DySbTe using magnetic susceptibility, heat capacity, and electrical resistivity measurements, along with high-resolution angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy and spectroscopy (STM/S), and density functional theory calculations. Our thermodynamic measurements revealed an antiferromagnetic ordering below TN = 7.45 K and a subsequent magnetic phase transition at TN1 = 7.15 K. Our transport studies indicate a semimetallic behavior with unusual feature in the ordered state. Our ARPES measurements revealed a diamond-shaped Fermi pocket centered at the G point, with band features that evolve distinctly across various binding energies. STM/S results indicate a minimum in the density of states at around 100 meV below the Fermi level, and ARPES measurements reveal a significant gap present around the X point, differentiating DySbTe from other LnSbTe compounds. These findings enhance our understanding of the SOC effects on the electronic structure and topological properties in the LnSbTe family, highlighting DySbTe as a promising candidate for exploring the interplay between topology and magnetism.

cond-mat.mes-hall↗

arXiv2025

Single-gate tracking behavior in flat-band multilayer graphene devices

A central feature of many van der Waals (vdW) materials is the ability to precisely control their charge doping, $n$, and electric displacement field, $D$, using top and bottom gates. For devices composed of only a few layers, it is commonly assumed that $D$ causes the layer-by-layer potential to drop linearly across the structure. Here, we show that this assumption fails for a broad class of crystalline and moir\'e vdW structures based on Bernal- or rhombohedral-stacked multilayer graphene. We find that the electronic properties at the Fermi level are largely dictated by special layer-polarized states arising at Bernal-stacked crystal faces, which typically coexist in the same band with layer-delocalized states. We uncover a novel mechanism by which the layer-delocalized states completely screen the layer-polarized states from the bias applied to the remote gate. This screening mechanism leads to an unusual scenario where voltages on either gate dope the band as expected, yet the band dispersion and associated electronic properties remain primarily (and sometimes exclusively) governed by the gate closer to the layer-polarized states. Our results reveal a novel electronic mechanism underlying the atypical single-gate-controlled transport characteristics observed across many flat-band graphitic structures, and provide key theoretical insights essential for accurately modeling these systems.

cond-mat.mes-hall↗

arXiv2024

On the origin of anomalous hysteresis in graphite/boron nitride transistors

Field-effect devices constructed by stacking flakes of van der Waals (vdW) materials, with hexagonal boron nitride (hBN) playing the role of gate dielectric, often exhibit virtually no hysteresis in their characteristics. This permits exquisitely detailed studies of diverse gate-voltage-tuned phenomena in vdW devices. Recently, however, a dramatic form of gate hysteresis, sometimes called the "gate doesn't work" (GDW) or "electron ratchet" effect, has been seen in certain individual vdW devices that seem otherwise unexceptional. When it occurs, this hysteresis phenomenon is striking and robust, yet it is difficult to reliably reproduce between devices and, largely as a result, its origin remains disputed. Most devices where it has been seen have a bilayer graphene channel and nominal rotational alignment between the graphene and hBN, which has engendered explanations based on properties of bilayer graphene combined with moir\'e effects. Here, we report our studies of the phenomenon observed in devices that have multilayer graphene channels. We find that the effect can occur in devices with graphite channels that have many more than two graphene layers, in which case it is unambiguously associated with just one surface of the graphite. It can also survive to room temperature, occur in the absence of intentional rotational alignment with hBN, persist when a monolayer of WSe2 is inserted between the graphene and hBN, and exhibit continuous relaxation on timescales of hours or longer. These observations impose strong constraints on the origin of this puzzling phenomenon, which has exciting potential applications if it can be mastered.

cond-mat.mes-hall↗

arXiv2024

Interplay of electronic crystals with integer and fractional Chern insulators in moir\'e pentalayer graphene

The rapid development of moir\'e quantum matter has recently led to the remarkable discovery of the fractional quantum anomalous Hall effect, and sparked predictions of other novel correlation-driven topological states. Here, we investigate the interplay of electronic crystals with integer and fractional Chern insulators in a moir\'e lattice of rhomobohedral pentalayer graphene (RPG) aligned with hexagonal boron nitride. At a doping of one electron per moir\'e unit cell, we see a correlated insulator with a Chern number that can be tuned between $C=0$ and $+1$ by an electric displacement field, accompanied by an array of other such insulators formed at fractional band fillings, $\nu$. Collectively, these states likely correspond to trivial and topological electronic crystals, some of which spontaneously break the discrete translational symmetry of the moir\'e lattice. Upon applying a modest magnetic field, a narrow region forms around $\nu=2/3$ in which transport measurements imply the emergence of a fractional Chern insulator, along with hints of weaker states at other fractional $\nu$. In the same sample, we also see a unique sequence of incipient Chern insulators arising over a broad range of incommensurate band filling near two holes per moir\'e unit cell. Our results establish moir\'e RPG as a fertile platform for studying the competition and potential intertwining of electronic crystallization and topological charge fractionalization.

cond-mat.mes-hall↗

arXiv2024

Strongly interacting Hofstadter states in magic-angle twisted bilayer graphene

Magic-angle twisted bilayer graphene (MATBG) hosts a multitude of strongly correlated states at partial fillings of its flat bands. In a magnetic field, these flat bands further evolve into a unique Hofstadter spectrum renormalized by strong Coulomb interactions. Here, we study the interacting Hofstadter states spontaneously formed within the topological magnetic subbands of an ultraclean MATBG device, notably including symmetry-broken Chern insulator (SBCI) states and fractional quantum Hall (FQH) states. The observed SBCI states form a cascade with their Chern numbers mimicking the main sequence correlated Chern insulators. The FQH states in MATBG form in Jain sequence; however, they disappear at high magnetic field, distinct from conventional FQH states which strengthen with increasing magnetic field. We reveal a unique magnetic field-driven phase transition from composite fermion phases to a dissipative Fermi liquid. Our theoretical analysis of the magnetic subbands hosting FQH states predicts non uniform quantum geometric properties far from the lowest Landau level. This points towards a more natural interpretation of these FQH states as in-field fractional Chern insulators of the magnetic subbands.

cond-mat.mes-hall↗

arXiv2024

Topological electronic crystals in twisted bilayer-trilayer graphene

In a dilute two-dimensional electron gas, Coulomb interactions can stabilize the formation of a Wigner crystal. Although Wigner crystals are topologically trivial, it has been predicted that electrons in a partially-filled band can break continuous translational symmetry and time-reversal symmetry spontaneously to form a form of topological electron crystal known as an anomalous Hall crystal. Here, we report the observation of a generalized version of the anomalous Hall crystal in twisted bilayer-trilayer graphene, whose formation is driven by the moire potential. The crystal forms at a band filling factor of one electron per four moir\'e unit cells ($\nu=1/4$) and quadruples the unit-cell area, coinciding with an integer quantum anomalous Hall effect. The Chern number of the state is exceptionally tunable, and can be switched reversibly between $+1$ and $-1$ by electric and magnetic fields. Several other topological electronic crystals arise in a modest magnetic field, originating from $\nu=1/3$, $1/2$, $2/3$, and $3/2$. The quantum geometry of the folded bands is likely very different from that of the original parent band, enabling possible future discoveries of correlation-driven topological phenomena

cond-mat.mes-hall↗