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arXiv · 1402.1702

Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics

Vinod K. Sangwan·Deep Jariwala·Ken Everaerts·Julian J. McMorrow·Jianting He·Matthew Grayson·Lincoln J. Lauhon·Tobin J. Marks·Mark C. Hersam
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Abstract

Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current saturation with intrinsic gain > 1.0 in vacuum (pressure < 2 x 10-5 Torr), and overall improved performance compared to control devices on conventional SiO2 gate dielectrics. Statistical analysis of the field-effect mobility and residual carrier concentration demonstrate high spatial uniformity of the dielectric interfacial properties and graphene transistor characteristics over full 3 inch wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics.

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Vinod K. Sangwan, Deep Jariwala, Ken Everaerts, Julian J. McMorrow, Jianting He, Matthew Grayson, Lincoln J. Lauhon, Tobin J. Marks, Mark C. Hersam. 2014-02-07. Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics. https://doi.org/10.1063/1.4866387

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