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arXiv · 1303.5458

Engineering Nanowire n-MOSFETs at Lg < 8 nm

Saumitra Mehrotra·SungGeun Kim·Tillmann Kubis·Michael Povolotskyi·Mark Lundstrom·Gerhard Klimeck
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Abstract

As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be engineered using strain and crystal orientation engineering. Full-band extended device atomistic quantum transport simulations are performed for nanowire MOSFETs at Lg<8 nm in both ballistic and incoherent scattering regimes. In conclusion, a heavier transport mass can indeed be advantageous in improving ON state currents in ultra scaled nanowire MOSFETs.

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Saumitra Mehrotra, SungGeun Kim, Tillmann Kubis, Michael Povolotskyi, Mark Lundstrom, Gerhard Klimeck. 2013-03-21. Engineering Nanowire n-MOSFETs at Lg < 8 nm. https://doi.org/10.1109/ted.2013.2263806

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