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arXiv · 1108.2551

Shape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowires

Abhijeet Paul·Mathieu Luisier·Gerhard Klimeck
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Abstract

The effect of geometrical confinement, atomic position and orientation of Silicon nanowires (SiNWs) on their thermal properties are investigated using the phonon dispersion obtained using a Modified Valence Force Field (MVFF) model. The specific heat ($C_{v}$) and the ballistic thermal conductance ($κ^{bal}_{l}$) shows anisotropic variation with changing cross-section shape and size of the SiNWs. The $C_{v}$ increases with decreasing cross-section size for all the wires. The triangular wires show the largest $C_{v}$ due to their highest surface-to-volume ratio. The square wires with [110] orientation show the maximum $κ^{bal}_{l}$ since they have the highest number of conducting phonon modes. At the nano-scale a universal scaling law for both $C_{v}$ and $κ^{bal}_{l}$ are obtained with respect to the number of atoms in the unit cell. This scaling is independent of the shape, size and orientation of the SiNWs revealing a direct correlation of the lattice thermal properties to the atomistic properties of the nanowires. Thus, engineering the SiNW cross-section shape, size and orientation open up new ways of tuning the thermal properties at the nanometer regime.

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Abhijeet Paul, Mathieu Luisier, Gerhard Klimeck. 2011-08-12. Shape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowires. https://doi.org/10.1063/1.3662177

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