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arXiv · 1105.1235

Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs

Laurens H. Willems van Beveren·Hans Huebl·Andrea Morello
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Abstract

We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P hyperfine lines have been observed using radio frequency reflectometry, which is promising for high-bandwidth operation and possibly time-resolved detection of spin resonance in donor-based semiconductor devices. Here we present the effect of microwave (MW) power and MOSFET biasing conditions on the EDMR signals.

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Laurens H. Willems van Beveren, Hans Huebl, Andrea Morello. 2011-05-06. Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs. https://doi.org/10.1109/commad.2010.5699750

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