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arXiv · 1012.1579

Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs

Shweta Deora·Abhijeet Paul·R. Bijesh·Jeff Huang·Gerhard Klimeck·Gennadi Bersuker·P. D. Krisch·Raj Jammy
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Abstract

In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs. Compared to Si channel, strained SiGe channel allows larger hole mobility (μh) in the transport direction and alleviates charge flow towards the gate oxide. μh enhancement by 40% in SiGe and 100% in Si-cap SiGe is observed compared to the Si hole universal mobility. A ~40% reduction in NBTI degradation, gate leakage and flicker noise (1/f) is observed which is attributed to a 4% increase in the hole-oxide barrier height (ϕ) in SiGe. Similar field acceleration factor (Γ) for threshold voltage shift (ΔVT) and increase in noise (ΔSVG) in Si and SiGe suggests identical degradation mechanisms.

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Shweta Deora, Abhijeet Paul, R. Bijesh, Jeff Huang, Gerhard Klimeck, Gennadi Bersuker, P. D. Krisch, Raj Jammy. 2010-12-13. Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs. https://doi.org/10.1109/led.2010.2099101

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