Dominant mobility modulation by the electric field effect at the LaAlO_3 / SrTiO_3 interface

C. Bell; S. Harashima; Y. Kozuka; M. Kim; B. G. Kim; Y. Hikita; H. Y. Hwang

doi:10.1103/physrevlett.103.226802

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arXiv · 0906.5310

Dominant mobility modulation by the electric field effect at the LaAlO_3 / SrTiO_3 interface

C. Bell·S. Harashima·Y. Kozuka·M. Kim·B. G. Kim·Y. Hikita·H. Y. Hwang

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Abstract

Caviglia et al. [Nature (London) 456, 624 (2008)] have found that the superconducting LaAlO_3 / SrTiO_3 interface can be gate modulated. A central issue is to determine the principal effect of the applied electric field. Using magnetotransport studies of a gated structure, we find that the mobility variation is almost five times as large as the sheet carrier density. Furthermore, superconductivity can be suppressed at both positive and negative gate bias. These results indicate that the relative disorder strength strongly increases across the superconductor-insulator transition.

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C. Bell, S. Harashima, Y. Kozuka, M. Kim, B. G. Kim, Y. Hikita, H. Y. Hwang. 2009-06-29. Dominant mobility modulation by the electric field effect at the LaAlO_3 / SrTiO_3 interface. https://doi.org/10.1103/physrevlett.103.226802

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