arXiv · 0905.4358
Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor
Abstract
We have developed nano-scale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately-implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Lande g-factors are consistent with expectations for donors in gated nanostructures.
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Kuan Yen Tan, Kok Wai Chan, Mikko Möttönen, Andrea Morello, Changyi Yang, Jessica van Donkelaar, Andrew Alves, Juha-Matti Pirkkalainen, David N. Jamieson, Robert G. Clark, Andrew S. Dzurak. 2010-02-02. Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor. https://arxiv.org/abs/0905.4358
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