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arXiv · 0812.1586

Operation of Graphene Transistors at GHz Frequencies

Yu-Ming Lin·Keith A. Jenkins·Alberto Valdes-Garcia·Joshua P. Small·Damon B. Farmer·Phaedon Avouris
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Abstract

Top-gated graphene transistors operating at high frequencies (GHz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating an FET-like behavior for graphene transistors. The cutoff frequency fT is found to be proportional to the dc transconductance gm of the device. The peak fT increases with a reduced gate length, and fT as high as 26 GHz is measured for a graphene transistor with a gate length of 150 nm. The work represents a significant step towards the realization of graphene-based electronics for high-frequency applications.

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Yu-Ming Lin, Keith A. Jenkins, Alberto Valdes-Garcia, Joshua P. Small, Damon B. Farmer, Phaedon Avouris. 2008-12-08. Operation of Graphene Transistors at GHz Frequencies. https://doi.org/10.1021/nl803316h

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