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arXiv · 0707.1796

Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

S. Dasgupta·C. Knaak·J. Moser·M. Bichler·S. F. Roth·A. Fontcuberta i Morral·G. Abstreiter·M. Grayson
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Abstract

A doping series of AlAs (001) quantum wells with Si delta-modulation doping on both sides reveals different dark and post-illumination saturation densities, as well as temperature dependent photoconductivity. The lower dark two-dimensional electron density saturation is explained assuming deep binding energy of Delta_DK = 65.2 meV for Si-donors in the dark. Persistent photoconductivity (PPC) is observed upon illumination, with higher saturation density indicating shallow post-illumination donor binding energy. The photoconductivity is thermally activated, with 4 K illumination requiring post-illumination annealing to T = 30 K to saturate the PPC. Dark and post-illumination doping efficiencies are reported.

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S. Dasgupta, C. Knaak, J. Moser, M. Bichler, S. F. Roth, A. Fontcuberta i Morral, G. Abstreiter, M. Grayson. 2007-09-18. Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells. https://doi.org/10.1063/1.2794012

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