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Multiphoton absorption and Rabi oscillations in armchair graphene nanoribbons

We present an analytical approach to the problem of the multiphoton absorption and Rabi oscillations in an armchair graphene nanoribbon (AGNR) in the presence of a time-oscillating strong electric field induced by a light wave directed parallel to the ribbon axis. The two-dimensional Dirac equation for the massless electron subject to the ribbon confinement is employed. In the resonant approximation the electron-hole pair production rate, associated with the electron transitions between the valence and conduction size-quantized subbands, the corresponding multiphoton absorption coefficient and the frequency of the Rabi oscillations are obtained in an explicit form. We trace the dependencies of the above quantities on the ribbon width and electric field strength for both the multiphoton assisted and tunneling regimes relevant to the time-oscillating and practically constant electric field, respectively. A significant enhancement effect of the oscillating character of the electric field on the intersubband transitions is encountered. Our analytical results are in qualitative agreement with those obtained for the graphene layer by numerical methods. Estimates of the expected experimental values for the typically employed AGNR and laser parameters show that both the Rabi oscillations and multiphoton absorption are accessible in the laboratory. The data relevant to the intersubband tunneling makes the AGNR a 1D condensed matter analog in which the quantum electrodynamic vacuum decay can be detected by applying an external laboratory electric field.

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Wigner-Weyl description of light absorption in disordered semiconductor alloys using the localization landscape theory

The presence of disorder in semiconductors can dramatically change their physical properties. Yet, models faithfully accounting for it are still scarce and computationally inefficient. We present a mathematical and computational model able to simulate the optoelectronic response of semiconductor alloys of several tens of nanometer sidelength, while at the same time accounting for the quantum localization effects induced by the compositional disorder at the nano-scale. The model is based on a Wigner-Weyl analysis of the structure of electron and hole eigenstates in phase space made possible by the localization landscape theory. After validation against eigenstates-based computations in 1D and 2D, our model is applied to the computation of light absorption in 3D InGaN alloys of different compositions. We obtain the detailed structures of the absorption tail below the average bandgap and the Urbach energies of all simulated compositions. Moreover, the Wigner-Weyl formalism allows us to define and compute 3D maps of the effective locally absorbed power at all frequencies. Finally the proposed approach opens the way to generalize this method to all energy-exchange processes such as radiative and non-radiative recombination in realistic devices.

cond-mat.dis-nn↗

Absence and recovery of cost-precision tradeoff relations in quantum transport

The operation of many classical and quantum systems in nonequilibrium steady state is constrained by cost-precision (dissipation-fluctuation) tradeoff relations, delineated by the thermodynamic uncertainty relation (TUR). However, coherent quantum electronic nanojunctions can escape such a constraint, showing finite charge current and nonzero entropic cost with vanishing current fluctuations. Here, we analyze the absence, and restoration, of cost-precision tradeoff relations in fermionic nanojunctions under different affinities: voltage and temperature biases. With analytic work and simulations, we show that both charge and energy currents can display the absence of cost-precision tradeoff if we engineer the transmission probability as a boxcar function -- with a perfect transmission and hard energy cutoffs. Specifically for charge current under voltage bias, the standard TUR may be immediately violated as we depart from equilibrium, and it is exponentially suppressed with increased voltage. However, beyond idealized, hard-cutoff energy-filtered transmission functions, we show that realistic models with soft cutoffs or imperfect transmission functions follow cost-precision tradeoffs, and eventually recover the standard TUR sufficiently far from equilibrium. The existence of cost-precision tradeoff relations is thus suggested as a generic feature of realistic nonequilibrium quantum transport junctions.

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Dirac fermions in armchair graphene nanoribbons trapped by electric quantum dots

We study the confinement of Dirac fermions in armchair graphene nanoribbons by means of a quantum-dot-type electrostatic potential. With the use of specific projection operators, we find exact solutions for some bound states that satisfy appropriate boundary conditions. We show that the energies of these bound states belong either to the gap of valence and conducting bands or they represent BIC's (bound states in the continuum) whose energies are embedded in the continuous spectrum.

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Single-crystal graphene on Ir(110)

A single-crystal sheet of graphene is synthesized on the low-symmetry substrate Ir(110) by thermal decomposition of C$_2$H$_4$ at 1500 K. Using scanning tunneling microscopy, low-energy electron diffraction, angle-resolved photoemission spectroscopy, and ab initio density functional theory the structure and electronic properties of the adsorbed graphene sheet and its moiré with the substrate are uncovered. The adsorbed graphene layer forms a wave pattern of nm wave length with a corresponding modulation of its electronic properties. This wave pattern is demonstrated to enable the templated adsorption of aromatic molecules and the uniaxial growth of organometallic wires. Not limited to this, graphene on Ir(110) is also a versatile substrate for 2D-layer growth and makes it possible to grow epitaxial layers on ureconstructed Ir(110).

cond-mat.mtrl-sci↗

Influences of the dissipative topological edge state on quantized transport in MnBi2Te4

The beauty of quantum Hall (QH) effect is the metrological precision of Hall resistance quantization that originates from the topological edge states. Understanding the factors that lead to quantization breakdown not only provides important insights on the nature of the topological protection of these edge states, but is beneficial for device applications involving such quantized transport. In this work, we combine conventional transport and real space conductivity mapping to investigate whether the quantization breakdown is tied to the disappearance of edge state in the hotly studied MnBi2Te4 system. Our experimental results unambiguously show that topological edge state does exist when quantization breakdown occurs. Such edge state is dissipative in nature and could lead to a quantization breakdown due to its diffusive character causing overlapping with bulk and other edge states in real devices. Our findings bring attentions to issues that are generally inaccessible in the transport study of QH, but can play important roles in practical measurements and device applications.

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Transverse Spin current at the normal/p-wave magnet junctions

We investigate the transmission properties of a junction between a normal metal and a p-wave magnet in the ballistic regime. We introduce a two-dimensional square lattice that confirms the p-wave magnet criteria. The $α$-vector of the magnet breaks the inversion symmetry of the parabolic dispersion, shifting them in $k$-space. These shifts alter the propagation direction of fermions passing through the junction interface. Depending on spin orientation, the transmission process exhibits anisotropic, angle-dependent behavior. We also demonstrate a mirror symmetry between fermions with opposite spin directions, leading to the emergence of a transverse spin current that flows parallel to the interface. Additionally, we show that the $α$-vector acts as a source for the dynamics of the spin-density wave and observe the formation of an indirect gap in the conductance of the junction. Our findings highlight the unique transmission characteristics and spin transport phenomena in normal metal/p-wave magnet junctions, paving the way for potential applications in spintronic devices.

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On the Zero-Bias Anomaly in Quantum Wires

Undoped GaAs/AlGaAs heterostructures have been used to fabricate quantum wires in which the average impurity separation is greater than the device size. We compare the behavior of the Zero-Bias Anomaly against predictions from Kondo and spin polarization models. Both theories display shortcomings, the most dramatic of which are the linear electron-density dependence of the Zero-Bias Anomaly spin-splitting at fixed magnetic field B and the suppression of the Zeeman effect at pinch-off.

cond-mat.mes-hall↗

Capacitance of graphene nanoribbons

We present an analytical theory for the gate electrostatics and the classical and quantum capacitance of the graphene nanoribbons (GNRs) and compare it with the exact self-consistent numerical calculations based on the tight-binding p-orbital Hamiltonian within the Hartree approximation. We demonstrate that the analytical theory is in a good qualitative (and in some aspects quantitative) agreement with the exact calculations. There are however some important discrepancies. In order to understand the origin of these discrepancies we investigate the self-consistent electronic structure and charge density distribution in the nanoribbons and relate the above discrepancy to the inability of the simple electrostatic model to capture the classical gate electrostatics of the GNRs. In turn, the failure of the classical electrostatics is traced to the quantum mechanical effects leading to the significant modification of the self-consistent charge distribution in comparison to the non-interacting electron description. The role of electron-electron interaction in the electronic structure and the capacitance of the GNRs is discussed. Our exact numerical calculations show that the density distribution and the potential profile in the GNRs are qualitatively different from those in conventional split-gate quantum wires; at the same time, the electron distribution and the potential profile in the GNRs show qualitatively similar features to those in the cleaved-edge overgrown quantum wires. Finally, we discuss an experimental extraction of the quantum capacitance from experimental data.

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Anisotropic spin--spin correlations in Mn$_1$/X(111), with X = Pd, Pt, Ag and Au

We present a finite-temperature theory of the anisotropic spin-spin correlations in magnetic metallic monolayers, deposited on a suitable substrate. The `spins' are the local moments set up by the itinerant electrons, and the key concept is the relativistic disordered local moment state, which represents the paramagnetic state of a set of local moments. The spin-spin correlations between these local moments are then extracted using the linear response formalism. The anisotropy is included in a fully relativistic treatment, based on the Dirac equation, and has a qualitative impact on noncollinear magnetic states, by lifting their chiral degeneracy. The theory is applied to Mn monolayers on the hexagonal (111) surfaces of Pd, Pt, Ag and Au. The presence of competing exchange interactions is highlighted by choosing different substrates, which favour either the row-wise antiferromagnetic state or the chiral triangular Néel state. We correlate the electronic structure with the magnetic properties, by comparing filled with partially filled substrate d--bands, and low vs high atomic number. The disagreement between theory and experiment for Mn$_1$/Ag(111) is addressed, and the nature of the magnetic domains found experimentally is suggested to be chiral.

cond-mat.mes-hall↗

Carrier localization mechanisms in InGaN/GaN quantum wells

Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that the resultant fluctuations in alloy concentration can localize the carriers. By using a locally varying indium concentration function we have calculated the contribution to the potential energy of the carriers from band gap fluctuations, the deformation potential and the spontaneous and piezoelectric fields. We have considered the effect of well width fluctuations and found that these contribute to electron localization, but not to hole localization. We also simulate low temperature photoluminescence spectra and find good agreement with experiment.

cond-mat.mes-hall↗

Time-convolutionless master equation for quantum dots: Perturbative expansion to arbitrary order

The master equation describing the non-equilibrium dynamics of a quantum dot coupled to metallic leads is considered. Employing a superoperator approach, we derive an exact time-convolutionless master equation for the probabilities of dot states, i.e., a time-convolutionless Pauli master equation. The generator of this master equation is derived order by order in the hybridization between dot and leads. Although the generator turns out to be closely related to the T-matrix expressions for the transition rates, which are plagued by divergences, in the time-convolutionless generator all divergences cancel order by order. The time-convolutionless and T-matrix master equations are contrasted to the Nakajima-Zwanzig version. The absence of divergences in the Nakajima-Zwanzig master equation due to the nonexistence of secular reducible contributions becomes rather transparent in our approach, which explicitly projects out these contributions. We also show that the time-convolutionless generator contains the generator of the Nakajima-Zwanzig master equation in the Markov approximation plus corrections, which we make explicit. Furthermore, it is shown that the stationary solutions of the time-convolutionless and the Nakajima-Zwanzig master equations are identical. However, this identity neither extends to perturbative expansions truncated at finite order nor to dynamical solutions. We discuss the conditions under which the Nakajima-Zwanzig-Markov master equation nevertheless yields good results.

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Quasihole condensates in quantum Hall liquids

We develop a formalism to describe quasihole condensates in quantum Hall liquids and thereby extend the conformal field theory approach to the full hierarchy of spin-polarized Abelian states, and to several classes of non-Abelian hierarchical states. Most previously proposed spin-polarized quantum Hall wave functions appear as special cases. In this paper we explain the physical motivations for the approach, and exemplify it by explicitly constructing the level-two quasihole condensate state at filling fraction 2/3, and the two level-three states at 5/13 and 5/7 which are built from combinations of quasielectron and quasihole condensates.

cond-mat.str-el↗

Phenomenological Study of Decoherence in Solid-State Spin Qubits due to Nuclear Spin Diffusion

We present a study of the prospects for coherence preservation in solid-state spin qubits using dynamical decoupling protocols. Recent experiments have provided the first demonstrations of multipulse dynamical decoupling sequences in this qubit system, but quantitative analyses of potential coherence improvements have been hampered by a lack of concrete knowledge of the relevant noise processes. We present simulations of qubit coherence under the application of arbitrary dynamical decoupling pulse sequences based on an experimentally validated semiclassical model. This phenomenological approach bundles the details of underlying noise processes into a single experimentally relevant noise power spectral density. Our results show that the dominant features of experimental measurements in a two-electron singlet-triplet spin qubit can be replicated using a $1/ω^{2}$ noise power spectrum associated with nuclear-spin-flips in the host material. Beginning with this validation we address the effects of nuclear programming, high-frequency nuclear-spin dynamics, and other high-frequency classical noise sources, with conjectures supported by physical arguments and microscopic calculations where relevant. Our results provide expected performance bounds and identify diagnostic metrics that can be measured experimentally in order to better elucidate the underlying nuclear spin dynamics.

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Inversion Symmetric Topological Insulators

We study translationally-invariant insulators with inversion symmetry that fall outside the established classification of topological insulators. These insulators are not required to have gapless boundary modes in the energy spectrum. However, they do exhibit protected modes in the entanglement spectrum localized on the cut between two entangled regions. Their entanglement entropy cannot be made to vanish adiabatically, and hence the insulators can be called topological. There is a direct connection between the inversion eigenvalues of the band structure and the mid-gap states in the entanglement spectrum. The classification of protected entanglement levels is given by an integer $n\in Z$, which is the difference between the negative inversion eigenvalues at inversion symmetric points in the Brillouin zone, taken in sets of two. When the Hamiltonian describes a Chern insulator or a non-trivial T-invariant topological insulator, the entanglement spectrum exhibits spectral flow. If the Chern number is zero for the former, or T is broken in the latter, the entanglement spectrum does \emph{not} have spectral flow, but, depending on the inversion eigenvalues, can still have protected midgap bands. Although spectral flow is broken, the mid-gap entanglement bands cannot be adiabatically removed, and the insulator is `topological.' In 1D, we establish a link between the product of the inversion eigenvalues of all occupied bands at all inversion momenta and charge polarization. In 2D, we prove a link between the product of the inversion eigenvalues and the parity of the Chern number. In 3D, we find a topological constraint on the product of the inversion eigenvalues indicating that some 3D materials are topological metals, and we show the link between the inversion eigenvalues and the 3D Quantum Hall Effect and the magnetoelectric polarization in the absence of T-symmetry.

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High Bias Voltage Transport in Metallic Single-walled Carbon Nanotubes under Axial Stress

We calculate the current-voltage characteristic of a homogeneously strained metallic carbon nanotube adsorbed on a substrate. The strain generates a gap in the energy spectrum leading to a reduction of the current. In the elastic regime, the current-voltage characteristic shows a large negative differential conductance at bias voltages of around $ \gtrsim 0.17 $V. We discuss the implications for the current in the superelongated regime.

cond-mat.mes-hall↗

Charge inhomogeneities and transport in semiconductor heterostructures with a manganese $δ$-layer

We study experimentally and theoretically the effects of disorder, nonlinear screening, and magnetism in semiconductor heterostructures containing a $δ$-layer of Mn, where the charge carriers are confined within a quantum well and hence both ferromagnetism and transport are two-dimensional (2D) and differ qualitatively from their bulk counterparts. Anomalies in the electrical resistance observed in both metallic and insulating structures can be interpreted as a signature of significant ferromagnetic correlations. The insulating samples turn out to be the most interesting as they can give us valuable insights into the mechanisms of ferromagnetism in these heterostructures. At low charge carrier densities, we show how the interplay of disorder and nonlinear screening can result in the organization of the carriers in the 2D transport channel into charge droplets separated by insulating barriers. Based on such a droplet picture and including the effect of magnetic correlations, we analyze the transport properties of this set of droplets, compare it with experimental data, and find a good agreement between the model calculations and experiment. Our analysis shows that the peak or shoulder-like features observed in temperature dependence of resistance of 2D heterostructures $δ$-doped by Mn lie significantly below the Curie temperature $T_{C}$ unlike the three-dimensional case, where it lies above and close to $T_{C}$. We also discuss the consequences of our description for understanding the mechanisms of ferromagnetism in the heterostructures under study.

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Topological superconducting phases in disordered quantum wires with strong spin-orbit coupling

Zeeman fields can drive semiconductor quantum wires with strong spin-orbit coupling and in proximity to s-wave superconductors into a topological phase which supports end Majorana fermions and offers an attractive platform for realizing topological quantum information processing. Here, we investigate how potential disorder affects the topological phase by a combination of analytical and numerical approaches. Most prominently, we find that the robustness of the topological phase against disorder depends sensitively and non-monotonously on the Zeeman field applied to the wire.

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