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arXiv2014

Band gap tunning in BN-doped graphene systems with high carrier mobility

Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping concentrations between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We show that the effective mass varies between 0.007 and 0.209 free electron masses, resembling a high mobility of the charge carriers.

cond-mat.mes-hall↗

arXiv2013

One-way Phonon Isolation In Acoustic Waveguides

We present a method to achieve one-way mode isolation in acoustic waveguides by considering spatio-temporal modulation of material properties. Mode conversion between symmetric and antisymmetric shear horizontal (SH) modes of an unbounded plate acoustic waveguide is demonstrated using this method. Analytical and numerical evidence for the possibility of mode conversion is presented. Possible experimental implementation and applications for on chip signal isolation in MEMS devices are also suggested.

physics.optics↗

arXiv2014

Valley filter from magneto-tunneling between single and bi-layer graphene

We consider tunneling transport between two parallel graphene sheets where one is a single-layer sample and the other one a bilayer. In the presence of an in-plane magnetic field, the interplay between combined energy and momentum conservation in a tunneling event and the distinctive chiral nature of charge carriers in the two systems turns out to favor tunneling of electrons from one of the two valleys in the graphene Brillouin zone. Adjusting the field strength enables manipulation of the valley polarization of the current, which reaches its maximum value of 100% concomitantly with a maximum of the tunneling conductance.

cond-mat.mes-hall↗

arXiv2014

Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) MOSFETs

We study the transport properties of monolayer MX2 (M = Mo, W; X = S, Se, Te) n- and p- channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an atomistic tight-binding Hamiltonian with hopping potentials obtained from density functional theory. We discuss the subthreshold slope, drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX2 MOSFETs. We also report the possibility of negative differential resistance behavior in the output characteristics of nanoscale monolayer MX2 MOSFETs.

cond-mat.mes-hall↗

arXiv2014

Magnetic field control of the intraband optical absorption in two-dimensional quantum rings

Linear and nonlinear optical absorption coefficients of the two-dimensional semiconductor ring in the perpendicular magnetic field $\bf B$ are calculated within independent electron approximation. Characteristic feature of the energy spectrum are crossings of the levels with adjacent nonpositive magnetic quantum numbers as the intensity $B$ changes. It is shown that the absorption coefficient of the associated optical transition is drastically decreased at the fields corresponding to the crossing. Proposed model of the Volcano disc allows to get simple mathematical analytical results, which provide clear physical interpretation. An interplay between positive linear and intensity-dependent negative cubic absorption coefficients is discussed; in particular, critical light intensity at which additional resonances appear in the total absorption dependence on the light frequency, is calculated as a function of the magnetic field and levels' broadening.

cond-mat.mes-hall↗

arXiv2014

Control of the in-plane anisotropy in off-stoichiometric NiMnSb

NiMnSb is a ferromagnetic half-metal which, because of its rich anisotropy and very low Gilbert damping, is a promising candidate for applications in information technologies. We have investigated the in-plane anisotropy properties of thin, MBE-grown NiMnSb films as a function of their Mn concentration. Using ferromagnetic resonance (FMR) to determine the uniaxial and four-fold anisotropy fields, 2KU/Ms and 2K1/Ms, we find that a small variation in composition is sufficient to change the film from primarily four-fold to primarily uniaxial behavior, allowing for continuous tuning of the anisotropy. This provides valuable flexibility in designing new device geometries.

cond-mat.mes-hall↗

arXiv2014

Graphene Cardboard: from Ripples to Tunable Metamaterial

Recently graphene was introduced with tunable ripple texturing, a nanofabric enabled by graphene's remarkable elastic properties. However, one can further envision sandwiching the ripples, thus constructing composite nanomaterial, graphene cardboard. Here the basic mechanical properties of such structures are investigated computationally. It turns out that graphene cardboard is highly tunable material, for its elastic figures of merit vary orders of magnitude, with Poisson ratio tunable from 10 to -0.5 as one example. These trends set a foundation to guide the design and usage of metamaterials made of rippled van der Waals solids.

cond-mat.mes-hall↗

arXiv2014

Radio-frequency dispersive detection of donor atoms in a field-effect transistor

Radio-frequency dispersive read-out can provide a useful probe to nano-scale structures such as nano-wire devices, especially when the implementation of charge sensing is not straightforward. Here we demonstrate dispersive `gate-only' read-out of phosphor donors in a silicon nano-scale transistor. The technique enables access to states that are only tunnel-coupled to one contact, which is not easily achievable by other methods. This allows us to locate individual randomly placed donors in the device channel. Furthermore, the setup is naturally compatible with high bandwidth access to the probed donor states and may aid the implementation of a qubit based on coupled donors.

cond-mat.mes-hall↗

arXiv2018

THz detection with epitaxial graphene field effect transistors on silicon carbide

We report on room temperature THz detection by means of antenna-coupled field effect transistors fabricated by using epitaxial graphene grown on silicon carbide substrate. Two independent detection mechanisms are found: plasma wave assisted-detection and thermoelectric effect, which is ascribed to the presence of junctions along the FET channel. The superposition of the calculated functional dependence of both the plasmonic and thermoelectric photovoltages on the gate bias qualitatively well reproduces the measured photovoltages. Additionally, the sign reversal of the measured photovoltage demonstrates the stronger contribution of the plasmonic detection compared to the thermoelectric mechanism. Although responsivity improvement is necessary, these results demonstrate that plasmonic detectors fabricated by epitaxial graphene on silicon carbide are potential candidates for fast large area imaging of macroscopic samples.

physics.app-ph↗

arXiv2017

Magnetite nano-islands on silicon-carbide with graphene

X-ray magnetic circular dichroism (XMCD) measurements of iron nano-islands grown on graphene and covered with a Au film for passivation reveal that the oxidation through defects in the Au film spontaneously leads to the formation of magnetite nano-particles (i.e, $Fe_3$$O_4$). The Fe nano-islands (20 and 75 monolayers; MLs) are grown on epitaxial graphene formed by thermally annealing 6H-SiC(0001) and subsequently covered, in the growth chamber, with nominal 20 layers of Au. Our X-ray absorption spectroscopy and XMCD measurements at applied magnetic fields show that the thin film (20 ML) is totally converted to magnetite whereas the thicker film (75 ML) exhibits properties of magnetite but also those of pure metallic iron. Temperature dependence of the XMCD signal (of both samples) shows a clear transition at $T_{\rm V}\approx 120$ K consistent with the Verwey transition of bulk magnetite. These results have implications on the synthesis of magnetite nano-crystals and also on their regular arrangements on functional substrates such as graphene.

cond-mat.mes-hall↗

arXiv2017

Dry-transferred CVD graphene for inverted spin valve devices

Integrating high-mobility graphene grown by chemical vapor deposition (CVD) into spin transport devices is one of the key tasks in graphene spintronics. We use a van der Waals pickup technique to transfer CVD graphene by hexagonal boron nitride (hBN) from the copper growth substrate onto predefined Co/MgO electrodes to build inverted spin valve devices. Two approaches are presented: (i) a process where the CVD-graphene/hBN stack is first patterned into a bar and then transferred by a second larger hBN crystal onto spin valve electrodes and (ii) a direct transfer of a CVD-graphene/hBN stack. We report record high spin lifetimes in CVD graphene of up to 1.75 ns at room temperature. Overall, the performances of our devices are comparable to devices fabricated from exfoliated graphene also revealing nanosecond spin lifetimes. We expect that our dry transfer methods pave the way towards more advanced device geometries not only for spintronic applications but also for CVD-graphene-based nanoelectronic devices in general where patterning of the CVD graphene is required prior to the assembly of final van der Waals heterostructures.

cond-mat.mes-hall↗

arXiv2018

Spin-Hall-Active Platinum Thin Films Grown Via Atomic Layer Deposition

We study the magnetoresistance of yttrium iron garnet/Pt heterostructures in which the Pt layer was grown via atomic layer deposition (ALD). Magnetotransport experiments in three orthogonal rotation planes reveal the hallmark features of spin Hall magnetoresistance. We estimate the spin transport parameters by comparing the magnitude of the magnetoresistance in samples with different Pt thicknesses. We compare the spin Hall angle and the spin diffusion length of the ALD Pt layers to the values reported for high-quality sputter-deposited Pt films. The spin diffusion length of 1.5nm agrees well with platinum thin films reported in the literature, whereas the spin Hall magnetoresistance $Δρ/ ρ= 2.2\times 10^{-5}$ is approximately a factor of 20 smaller compared to that of our sputter-deposited films. Our results demonstrate that ALD allows fabricating spin-Hall-active Pt films of suitable quality for use in spin transport structures. This work provides the basis to establish conformal ALD coatings for arbitrary surface geometries with spin-Hall-active metals and could lead to 3D spintronic devices in the future.

cond-mat.mes-hall↗

arXiv2018

A parametric symmetry breaking transducer

Force detectors rely on resonators to transduce forces into a readable signal. Usually these resonators operate in the linear regime and their signal appears amidst a competing background comprising thermal or quantum fluctuations as well as readout noise. Here, we demonstrate that a parametric symmetry breaking transduction leads to a novel and robust nonlinear force detection in the presence of noise. The force signal is encoded in the frequency at which the system jumps between two phase states which are inherently protected against phase noise. Consequently, the transduction effectively decouples from readout noise channels. For a controlled demonstration of the method, we experiment with a macroscopic doubly-clamped string. Our method provides a promising new paradigm for high-precision force detection.

cond-mat.mes-hall↗

arXiv2018

Rashba proximity states in superconducting tunnel junctions

We consider a new kind of superconducting proximity effect created by the tunneling of "spin split" Cooper pairs between two conventional superconductors connected by a normal conductor containing a quantum dot. The difference compared to the usual superconducting proximity effect is that the spin states of the tunneling Cooper pairs are split into singlet and triplet components by the electron spin-orbit coupling, which is assumed to be active in the normal conductor only. We demonstrate that the supercurrent carried by the spin-split Cooper pairs can be manipulated both mechanically and electrically for strengths of the spin-orbit coupling that can realistically be achieved by electrostatic gates.

cond-mat.mes-hall↗

arXiv2018

Localization of magnon modes in a curved magnetic nanowire

Spin waves in magnetic nanowires can be bound by a local bending of the wire. The eigenfrequency of a truly local magnon mode is determined by the curvature: a general analytical expression is established for any infinitesimally weak localized curvature of the wire. The interaction of the local mode with spin waves, propagating through the bend, results in scattering features, which is well confirmed by spin-lattice simulations.

cond-mat.mes-hall↗

arXiv2021

High conductivity Polarization-induced 2D hole gases in Undoped GaN/AlN Heterojunctions enabled by Impurity Blocking Layers

High-conductivity undoped GaN/AlN 2D hole gases (2DHGs), the p-type dual of the AlGaN/GaN 2D electron gases (2DEGs), have offered valuable insights into hole transport in GaN and enabled the first GaN GHz RF p-channel FETs. They are an important step towards high-speed and high-power complementary electronics with wide-bandgap semiconductors. These technologically and scientifically relevant 2D hole gases are perceived to be not as robust as the 2DEGs because structurally similar heterostructures exhibit wide variations of the hole density over $Δp_s >$ 7 x 10$^{13}$ cm$^{-2}$, and low mobilities. In this work, we uncover that the variations are tied to undesired dopant impurities such as Silicon and Oxygen floating up from the nucleation interface. By introducing impurity blocking layers (IBLs) in the AlN buffer layer, we eliminate the variability in 2D hole gas densities and transport properties, resulting in a much tighter-control over the 2DHG density variations to $Δp_s \leq$ 1 x 10$^{13}$ cm$^{-2}$ across growths, and a 3x boost in the Hall mobilities. These changes result in a 2-3x increase in hole conductivity when compared to GaN/AlN structures without IBLs.

cond-mat.mes-hall↗

arXiv2023

Multimode optomechanics with a two-dimensional optomechanical crystal

Chip-scale multimode optomechanical systems have unique benefits for sensing, metrology and quantum technologies relative to their single-mode counterparts. Slot-mode optomechanical crystals enable sideband resolution and large optomechanical couplings of a single optical cavity to two microwave-frequency mechanical modes. Still, previous implementations have been limited to nanobeam geometries, whose effective quantum cooperativity at ultralow temperatures is limited by their low thermal conductance. In this work, we design and experimentally demonstrate a two-dimensional mechanical-optical-mechanical (MOM) platform that dispersively couples a slow-light slot-guided photonic-crystal waveguide mode and two slow-sound $\sim 7$ GHz phononic wire modes localized in physically distinct regions. We first demonstrate optomechanical interactions in long waveguide sections, unveiling acoustic group velocities below 800 m/s, and then move on to mode-gap adiabatic heterostructure cavities with a tailored mechanical frequency difference. Through optomechanical spectroscopy, we demonstrate optical quality factors $Q \sim 10^5$, vacuum optomechanical coupling rates, $g_o/2π$, of 1.5 MHz and dynamical backaction effects beyond the single-mode picture. At larger power and adequate laser-cavity detuning, we demonstrate regenerative optomechanical oscillations involving a single mechanical mode, extending to both mechanical modes through modulation of the input laser drive at their frequency difference. This work constitutes an important advance towards engineering MOM systems with nearly degenerate mechanical modes as part of hybrid multipartite quantum systems.

physics.optics↗

arXiv2024

Orthonormal and periodic levels for Quantum Cascade Laser simulation

A Python package to evaluate Wannier, Wannier-Stark, and EZ (both Energy and location Z resolved) levels for Quantum Cascade Lasers is presented. We provide the underlying theory in detail with a focus on the orthonormality and periodicity of the generated states.

cond-mat.mes-hall↗