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Results for “cond-mat.mes-hall”

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arXiv2013

Magnonic Band Structure, Complete Bandgap and Collective Spin Wave Excitation in Nanoscale Two--Dimensional Magnonic Crystals

We present the observation of a complete bandgap and collective spin wave excitation in two-dimensional magnonic crystals comprised of arrays of nanoscale antidots and nanodots, respectively. Considering that the frequencies dealt with here fall in the microwave band, these findings can be used for the development of suitable magnonic metamaterials and spin wave based signal processing. We also present the application of a numerical procedure, to compute the dispersion relations of spin waves for any high symmetry direction in the first Brillouin zone. The results obtained from this procedure has been reproduced and verified by the well established plane wave method for an antidot lattice, when magnetization dynamics at antidot boundaries is pinned. The micromagnetic simulation based method can also be used to obtain iso--frequency countours of spin waves. Iso--frequency contours are analougous of the Fermi surfaces and hence, they have the potential to radicalize our understanding of spin wave dynamics. The physical origin of bands, partial and full magnonic bandgaps has been explained by plotting the spatial distribution of spin wave energy spectral density. Although, unfettered by rigid assumptions and approximations, which afflict most analytical methods used in the study of spin wave dynamics, micromagnetic simulations tend to be computationally demanding. Thus, the observation of collective spin wave excitation in the case of nanodot arrays, which can obviate the need to perform simulations may also prove to be valuable.

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arXiv2014

A programmable quantum current standard from the Josephson and the quantum Hall effects

We propose a way to realize a programmable quantum current standard (PQCS) from the Josephson voltage standard and the quantum Hall resistance standard (QHR) exploiting the multiple connection technique provided by the quantum Hall effect (QHE) and the exactness of the cryogenic current comparator. The PQCS could lead to breakthroughs in electrical metrology like the realization of a programmable quantum current source, a quantum ampere-meter and a simplified closure of the Quantum Metrological Triangle. Moreover, very accurate universality tests of the QHE could be performed by comparing PQCS based on different QHRs.

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arXiv2013

Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation

We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We measure the dielectric loss versus microwave power for resonators with frequencies in the GHz range at temperatures from 54 to 303 mK. The power and temperature dependence of the loss is consistent with the tunneling two-level system theory. These results are relevant to understanding decoherence in superconducting quantum devices. The obtained oxide films are thin and robust, making them suitable for capacitors in compact microwave resonators.

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arXiv2014

Planar graphene tunnel field-effect transistor

We propose a concept for a graphene tunnel field-effect transistor. The main idea is based on the use of two graphene electrodes with zigzag termination divided by a narrow gap under the influence of the common gate. Our analysis shows that such device will have a pronounced switching effect at low gate voltage and high on/off current ratio at room temperature.

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arXiv2014

Impact of graphene polycrystallinity on the performance of graphene field-effect transistors

We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries, and can be used to guide the further development and optimization of graphene-based electronic devices.

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arXiv2013

Strong coupling between excitons in organic semiconductors and Bloch Surface Waves

We report on the strong coupling between the Bloch surface wave supported by an inorganic multilayer structure and $J$-aggregate excitons in an organic semiconductor. The dispersion curves of the resulting polariton modes are investigated by means of angle-resolved attenuated total reflection as well as photoluminescence experiments. The measured Rabi splitting is 290 meV. These results are in good agreement with those obtained from our theoretical model.

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arXiv2014

Thermal response of double-layered metal films after ultrashort pulsed laser irradiation: the role of nonthermal electron dynamics

The thermal response of a Cu-Ti double-layered film is investigated after laser irradiation with ultrashort pulses (pulse duration τp=50fs, 800nm laser wavelength) in submelting conditions by including the influence of nonthermal electrons. A revised two-temperature model is employed to account for the contribution of nonthermal electron distribution while the variation of the optical properties of the material during the laser beam irradiation is also incorporated into the model. Theoretical results can provide significant insight into the physical mechanism that characterize electron dynamics and can facilitate production of controllable ultra-high strength Cu-Ti alloys with promising applications.

cond-mat.mtrl-sci↗

arXiv2014

High-performance ferroelectric memory based on fully patterned tunnel junctions

In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission and associated resistance. The information readout in ferroelectric tunnel junctions (FTJs) is thus resistive and non-destructive, which is an advantage compared to the case of conventional ferroelectric memories (FeRAMs). Initially, endurance limitation (i.e. fatigue) was the main factor hampering the industrialization of FeRAMs. Systematic investigations of switching dynamics for various ferroelectric and electrode materials have resolved this issue, with endurance now reaching $10^{14}$ cycles. Here we investigate data retention and endurance in fully patterned submicron Co/BiFeO$_3$/Ca$_{0.96}$Ce$_{0.04}$MnO$_3$ FTJs. We report good reproducibility with high resistance contrasts and extend the maximum reported endurance of FTJs by three orders of magnitude ($4\times10^6$ cycles). Our results indicate that here fatigue is not limited by a decrease of the polarization or an increase of the leakage but rather by domain wall pinning. We propose directions to access extreme and intermediate resistance states more reliably and further strengthen the potential of FTJs for non-volatile memory applications.

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arXiv2013

Spin-orbit torque opposing the Oersted torque in ultrathin Co/Pt bilayers

Current-induced torques in ultrathin Co/Pt bilayers were investigated using an electrically driven FMR technique. The angle dependence of the resonances, detected by a rectification effect as a voltage, were analysed to determine the symmetries and relative magnitudes of the spin-orbit torques. Both anti-damping (Slonczewski) and field-like torques were observed. As the ferromagnet thickness was reduced from 3 to 1 nm, the sign of the field-like torque reversed. This observation is consistent with the emergence of a Rashba spin orbit torque in ultra-thin bilayers.

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arXiv2013

All-electrical time-resolved spin generation and spin manipulation in n-InGaAs

We demonstrate all-electrical spin generation and subsequent manipulation by two successive electric field pulses in an n-InGaAs heterostructure in a time-resolved experiment at zero external magnetic field. The first electric field pulse along the $[1\bar10]$ crystal axis creates a current induced spin polarization (CISP) which is oriented in the plane of the sample. The subsequent electric field pulse along [110] generates a perpendicular magnetic field pulse leading to a coherent precession of this spin polarization with 2-dimensional electrical control over the final spin orientation. Spin precession is probed by time-resolved Faraday rotation. We determine the build-up time of CISP during the first field pulse and extract the spin dephasing time and internal magnetic field strength during the spin manipulation pulse.

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arXiv2014

Persistent currents in absence of magnetic field in graphene nanorings: The ambiguous role of inter valley scattering

Persistent currents can arise in normal-metal rings due to a magnetic flux threading the ring in equilibrium. However, can persistent currents arise in absence of magnetic flux in the same normal-metal rings? Yes they can but in a non-equilibrium set-up. This is known as current magnification. In this work we show that current magnification can be seen in graphene nanorings. Further, graphene can have electrons polarized with a valley quantum number. Electron scattering between valleys can have a non-trivial effect on these persistent currents including inducing a sign change and generating them for parameters where none existed to begin with.

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arXiv2013

Entanglement-assisted electron microscopy based on a flux qubit

A notorious problem in high-resolution biological electron microscopy is radiation damage to the specimen caused by probe electrons. Hence, acquisition of data with minimal number of electrons is of critical importance. Quantum approaches may represent the only way to improve the resolution in this context, but all proposed schemes to date demand delicate control of the electron beam in highly unconventional electron optics. Here we propose a scheme that involves a flux qubit based on a radio-frequency superconducting quantum interference device (rf-SQUID), inserted in essentially a conventional transmission electron microscope. The scheme significantly improves the prospect of realizing a quantum-enhanced electron microscope for radiation-sensitive specimens.

quant-ph↗

arXiv2013

The Effect of Dipole Boron Centers on the Electroluminescence of Nanoscale Silicon p+-n Junctions

Nanoscale silicon p(+)-n junctions with very high concentration of boron, 5 10^21 cm-3, are found to demonstrate interesting optical properties. Emission band dominated in near-infrared electroluminescence (EL) spectra possesses high degree of the linear polarization along preferred crystallographic axis which can be controlled by the lateral voltage applied in the plane of the p(+)-n junction. Such behavior together with the temperature dependence of the EL intensity is attributed to the presence of the self-compensating dipole boron centers, B(+)-B(-), with negative correlation energy which are identified using the ESR technique in the nanoscale silicon p(+)-n junctions heavily doped with boron. The model of the recombination process though the negative-U dipole boron centers controlling the optical properties of the nanoscale silicon p(+)-n junctions is proposed.

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arXiv2013

Negative-U Centers as a Basis of Topological Edge Channels

We present the findings of the studies of the silicon sandwich nanostructure that represents the high mobility ultra - narrow silicon quantum well of the p - type (Si - QW), 2 nm, confined by the delta - barriers, 3 nm, heavily doped with boron on the n - type Si (100) surface. The ESR studies show that nanostructured delta - barriers confining the Si - QW consist predominantly of the dipole negative - U centers of boron, which are caused by the reconstruction of the shallow boron acceptors along the <111> crystallographic axis, 2B(0) = B(+) + B(-). The electrically ordered chains of dipole negative - U centers of boron in the delta -barriers appear to give rise to the topological edge states separated vertically, because the value of the longitudinal, Gxx = 4e2/h, and transversal, Gxy = e2/h, conductance measured at extremely low drain-source current indicates the exhibition of the Quantum Spin Hall effect. Besides, the Aharonov - Casher conductance oscillations and the 0.7(2e2/h) - feature obtained are evidence of the interplay of the spontaneous spin polarisation and the Rashba spin - orbit interaction that is attributable to the formation of the topological edge channels. We discuss the phenomenological model of the topological edge channel which can demonstrate the ballistic, Aharonov - Chasher effect or Josephson junction behaviour in dependence on the disorder in the distribution of the negative - U dipole centers in the upper and down delta - barriers.

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arXiv2013

Electrically-Detected ESR in Silicon Nanostructures Inserted in Microcavities

We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor delta-barriers. This technique allows the ESR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the only response of the magnetoresistance, with internal GHz Josephson emission within frameworks of the normal-mode coupling (NMC) caused by the microcavities embedded in the Si-QW plane.

cond-mat.mes-hall↗

arXiv2014

Electric-field-tunable mechanical properties of relaxor ferroelectric single crystal measured by nanoindentation

Electric field dependent mechanical properties of relaxor ferroelectric material Pb(Mn1/3Nb2/3)O3-PbTiO3 are investigated with the nanoindentation technique. Giant electric-field-tunable apparent elastic modulus (up to -39%), hardness (-9% to 20%) and energy dissipation (up to -13%) are reported. Based on experimental data, a characterization method of electromechanical coupled nanoindentation is proposed. In this method, an electric field tunable scaling relationship among elastic modulus, hardness and indentation work for ferroelectric materials can be determined. In addition, this method can be used to obtain the electric-field-dependent elastic modulus and hardness, and avoid the estimate of contact area in the Oliver-Pharr method. Finally, the different effects on elastic modulus between positive and negative electric fields can be explained by the flexoelectric effect.

cond-mat.mes-hall↗

arXiv2013

Spin Caloritronics in graphene with Mn

We show that graphene with Mn adatoms trapped at single vacancies feature spin-dependent Seebeck effect, thus enabling the use of this material for spin caloritronics. A gate potential can be used to tune its thermoelectric properties in a way it presents either a total spin polarized current, flowing in one given direction, or currents for both spins flowing in opposite directions without net charge transport. Moreover, we show that the thermal magnetoresistance can be tuned between $-100\%$ and $+100\%$ by varying agate potential.

cond-mat.mes-hall↗

arXiv2014

Nonlinear vs. bolometric radiation response and phonon thermal conductance in graphene-superconductor junctions

Graphene is a promising candidate for building fast and ultra-sensitive bolometric detectors due to its weak electron-phonon coupling and low heat capacity. In order to realize a practical graphene-based bolometer, several important issues, including the nature of radiation response, coupling efficiency to the radiation and the thermal conductance need to be carefully studied. Addressing these issues, we present graphene-superconductor junctions as a viable option to achieve efficient and sensitive bolometers, with the superconductor contacts serving as hot electron barriers. For a graphene-superconductor device with highly transparent interfaces, the resistance readout in the presence of radio frequency radiation is dominated by non-linear response. On the other hand, a graphene-superconductor tunnel device shows dominantly bolometric response to radiation. For graphene devices fabricated on $SiO_{2}$ substrates, we confirm recent theoretical predictions of $T^{2}$ temperature dependence of phonon thermal conductance in the presence of disorder in the graphene channel at low temperatures.

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