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Results for “cond-mat.mes-hall”

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At least 1,045 records · Page 58Linked to original sources

arXiv2013

Thermal rectification of electrons in hybrid normal metal-superconductor nanojunctions

We theoretically investigate heat transport in hybrid normal metal-superconductor (NS) nanojunctions focusing on the effect of thermal rectification. We show that the heat diode effect in the junction strongly depends on the transmissivity and the nature of the NS contact. Thermal rectification efficiency can reach up to 123% for a fully-transmissive ballistic junction and up to 84% in diffusive NS contacts. Both values exceed the rectification efficiency of a NIS tunnel junction (I stands for an insulator) by a factor close to 5 and 3, respectively. Furthermore, we show that for NS point-contacts with low transmissivity, inversion of the heat diode effect can take place. Our results could prove useful for tailoring heat management at the nanoscale, and for mastering thermal flux propagation in low-temperature caloritronic nanocircuitry.

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arXiv2013

Planning the electron traffic in semiconductor networks: A mesoscopic analog of the Braess paradox encountered in road networks

By combining quantum simulations of electron transport and scanning-gate microscopy, we have shown that the current transmitted through a semiconductor two-path rectangular network in the ballistic and coherent regimes of transport can be paradoxically degraded by adding a third path to the network. This is analogous to the Braess paradox occurring in classical networks. Simulations reported here enlighten the role played by congestion in the network.

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arXiv2013

Time-resolved observation of fast domain-walls driven by vertical spin currents in short tracks

We present time-resolved measurements of the displacement of magnetic domain-walls (DWs) driven by vertical spin-polarized currents in track-shaped magnetic tunnel junctions. In these structures we observe very high DW velocities (600 m/s) at current densities below $10^7 A/cm^2$. We show that the efficient spin-transfer torque combined with a short propagation distance allows to avoid the Walker breakdown process, and achieve deterministic, reversible and fast ($\approx$ 1 ns) DW-mediated switching of magnetic tunnel junction elements, which is of great interest to the implementation of fast DW-based spintronic devices.

cond-mat.mtrl-sci↗

arXiv2013

A table-top, repetitive pulsed magnet for nonlinear and ultrafast spectroscopy in high magnetic fields up to 30 T

We have developed a mini-coil pulsed magnet system with direct optical access, ideally suited for nonlinear and ultrafast spectroscopy studies of materials in high magnetic fields up to 30 T. The apparatus consists of a small coil in a liquid nitrogen cryostat coupled with a helium flow cryostat to provide sample temperatures down to below 10 K. Direct optical access to the sample is achieved with the use of easily interchangeable windows separated by a short distance of ~135 mm on either side of the coupled cryostats with numerical apertures of 0.20 and 0.03 for measurements employing the Faraday geometry. As a demonstration, we performed time-resolved and time-integrated photoluminescence measurements as well as transmission measurements on InGaAs quantum wells.

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arXiv2013

Engineering the Quantum Anomalous Hall Effect in Graphene with Uniaxial Strains

We theoretically investigate the manipulation of the quantum anomalous Hall effect (QAHE) in graphene by means of the uniaxial strain. The values of Chern number and Hall conductance demonstrate that the strained graphene in presence of Rashba spin-orbit coupling and exchange field, for vanishing intrinsic spin-orbit coupling, possesses non-trivial topological phase which is robust against the direction and modulus of the strain. Besides, we also find that the interplay between Rashba and intrinsic spin-orbit couplings results in a topological phase transition in the strained graphene. Remarkably, as the strain strength is increased beyond approximately 7%, the critical parameters of the exchange field for triggering the quantum anomalous Hall phase transition show distinct behaviors - decrease (increase) for strains along zigzag (armchair) direction. Our findings open up a new platform for manipulation of the QAHE by an experimentally accessible strain deformation of the graphene structure, with promising application on novel quantum electronic devices with high energy efficiency performance.

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arXiv2014

Surface-resistance measurements using superconducting stripline resonators

We present a method to measure the absolute surface resistance of conductive samples at a set of GHz frequencies with superconducting lead stripline resonators at temperatures 1- 6K. The stripline structure can easily be applied for bulk samples and allows direct calculation of the surface resistance without the requirement of additional calibration measurements or sample reference points. We further describe a correction method to reduce experimental background on high-Q resonance modes by exploiting TEM-properties of the external cabling. We then show applications of this method to the reference materials gold, tantalum, and tin, which include the anomalous skin effect and conventional superconductivity. Furthermore, we extract the complex optical conductivity for an all-lead stripline resonator to find a coherence peak and the superconducting gap of lead.

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arXiv2013

Hierarchy of Graphene Wrinkles Induced by Thermal Strain Engineering

Graphene is only one atom thick and becomes the ultimate thin film to explore membrane physics and mechanics. Here we study hierarchy of graphene wrinkles induced by thermal strain engineering and demonstrate that the wrinkling hierarchy can be accounted for by the wrinklon theory. We derive an equation λ = (ky)0.5 explaining evolution of wrinkling wavelength λ with the distance to the edge y observed in our experiment by considering both bending energy and stretching energy of the graphene flakes. The prefactor k in the equation is determined to be about 55 nm, which is independent of the size of the graphene flakes. Our experimental result indicates that the classical membrane behavior of graphene persists down to about 100 nm of the wrinkling wavelength.

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arXiv2014

Deposition of thin silicon layers on transferred large area CVD graphene

Physical vapor deposition of Si onto transferred graphene is investigated. At elevated temperatures, Si nucleates preferably on wrinkles and multilayer graphene islands. In some cases, however, Si can be quasi-selectively grown only on the monolayer graphene regions while the multilayer islands remain uncovered. Experimental insights and ab initio calculations show that variations in the removal efficiency of carbon residuals after the transfer process can be responsible for this behavior. Low-temperature Si seed layer results in improved wetting and enables homogeneous growth. This is an important step towards realization of electronic devices in which graphene is embedded between two Si layers.

cond-mat.mtrl-sci↗

arXiv2014

Anomalous diameter dependence of thermal transport in ultra-narrow Si nanowires

We present atomistic valence force field calculations of thermal transport in Si nanowires of diameters from 12nm down to 1nm. We show that as the diameter is reduced, the phonon density-of-states and transmission function acquire a finite value at low frequency, in contrast to approaching zero as in the bulk material. It turns out that this effect results in what Ziman described as the "problem of long longitudinal waves" [1], which states that the thermal conductivity of a material increases as its length is increased due to the vanishing scattering for long-wavelength phonons. We show that this thermal transport improvement also appears in nanowires as their diameter is decreased below D=5nm (not only as the length increases) originating from the increase in the density of the long wavevector modes. The observation is present under ballistic transport conditions, and further enhanced with the introduction of phonon-phonon scattering. Because of this, in such ultra-narrow nanowires, as the diameter is reduced, phonon transport is dominated more and more by lower energy phonons with longer mean-free paths. We show that ~80% of the heat is carried by phonons with energies less than 5meV, most with mean-free paths of several hundreds of nanometers.

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arXiv2013

Ground-state magnetic phase diagram of bow-tie graphene nanoflakes in external magnetic field

The magnetic phase diagram of a ground state is studied theoretically for graphene nanoflakes of bow-tie shape and various size in external in-plane magnetic field. The tight-binding Hamiltonian supplemented with Hubbard term is used to model the electronic structure of the systems in question. The existence of the antiferromagnetic phase with magnetic moments localized at the sides of the bow-tie is found for low field and a field-induced spin-flip transition to ferromagnetic state is predicted to occur in charge-undoped structures. For small nanoflake doped with a single charge carrier the low-field phase is ferrimagnetic and a metamagnetic transition to ferromagnetic ordering can be forced by the field. The critical field is found to decrease with increasing size of the nanoflake. The influence of diagonal and off-diagonal disorder on the mentioned magnetic properties is studied. The effect of off-diagonal disorder is found to be more important than this of diagonal disorder, leading to significantly widened distribution of critical fields for disordered population of nanoflakes.

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arXiv2013

SiGe quantum dots for fast hole spin Rabi oscillations

We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique.

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arXiv2014

Current dependence of spin torque switching rate based on Fokker-Planck approach

The spin torque switching rate of an in-plane magnetized system in the presence of an applied field is derived by solving the Fokker-Planck equation. It is found that three scaling currents are necessary to describe the current dependence of the switching rate in the low-current limit. The dependences of these scaling currents on the applied field strength are also studied.

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arXiv2013

Realizing three-dimensional artificial spin ice by stacking planar nanoarrays

Artificial spin ice is a frustrated magnetic two-dimensional nano-material, recently employed to study variety of tailor-designed unusual collective behaviours. Recently proposed extensions to three dimensions are based on self-assembly techniques and allow little control over geometry and disorder. We present a viable design for the realization of a three-dimensional artificial spin ice with the same level of precision and control allowed by lithographic nano-fabrication of the popular two-dimensional case. Our geometry is based on layering already available two-dimensional artificial spin ice and leads to an arrangement of ice-rule-frustrated units which is topologically equivalent to that of the tetrahedra in a pyrochlore lattice. Consequently, we show, it exhibits a genuine ice phase and its excitations are, as in natural spin ice materials, magnetic monopoles interacting via Coulomb law.

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arXiv2014

Ballistic transport in graphene grown by chemical vapor deposition

In this letter we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements we show that electrons can be ballistically directed by a magnetic field (transverse magnetic focussing) over length scales of ~μm. Comparison with atomic force microscope measurements suggests a correlation between the absence of wrinkles and the presence of ballistic transport in CVD graphene.

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arXiv2013

Generation and control of spin-polarized photocurrents in GaMnAs heterostructures

Photocurrents are calculated for a specially designed GaMnAs semiconductor heterostructure. The results reveal regions in the infrared range of the energy spectrum in which the proposed structure is remarkably spin-selective. For such photon energies, the generated photocurrents are strongly spin-polarized. Application of a relatively small static bias in the growth direction of the structure is predicted to efficiently reverse the spin-polarization for some photon energies. This behavior suggests the possibility of conveniently simple switching mechanisms. The physics underlying the results is studied and understood in terms of the spin-dependent properties emerging from the particular potential profile of the structure.

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arXiv2013

Graphene on silicon nitride for optoelectromechanical micromembrane resonators

Due to their exceptional mechanical and optical properties, dielectric silicon nitride (SiN) micromembrane resonators have become the centerpiece of many optomechanical experiments. Efficient capacitive coupling of the membrane to an electrical system would facilitate exciting hybrid optoelectromechanical devices. However, capacitive coupling of such dielectric membranes is rather weak. Here we add a single layer of graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene coated membranes is found to be equal to a perfectly conductive membrane. Our results show that a single layer of graphene substantially enhances the electromechanical capacitive coupling without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of SiN micromembrane resonators.

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arXiv2013

Balanced double-loop mesoscopic interferometer based on Josephson proximity nanojunctions

We report on the fabrication and characterization of a two-terminal mesoscopic interferometer based on three V/Cu/V Josephson junctions having nanoscale cross-section. The junctions have been arranged in a double-ring geometry realized by metallic thin film deposition through a suspended mask defined by electron beam lithography. Although a significant amount of asymmetry between the critical current of each junction is observed we show that the interferometer is able to suppress the supercurrent to a level lower than 6 parts per thousand, being here limited by measurement resolution. The present nano-device is suitable for low-temperature magnetometric and gradiometric measurements over the micrometric scale.

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arXiv2014

Nanoscale nuclear magnetic resonance with a 1.9-nm-deep nitrogen-vacancy sensor

We present nanoscale NMR measurements performed with nitrogen-vacancy (NV) centers located down to about 2 nm from the diamond surface. NV centers were created by shallow ion implantation followed by a slow, nanometer-by-nanometer removal of diamond material using oxidative etching in air. The close proximity of NV centers to the surface yielded large 1H NMR signals of up to 3.4 uT-rms, corresponding to ~330 statistically polarized or ~10 fully polarized proton spins in a ~(1.8 nm)^3 detection volume.

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