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Dependence of spin torque diode voltage on applied field direction

The optimum condition of an applied field direction to maximize spin torque diode voltage was theoretically derived for a magnetic tunnel junction with a perpendicularly magnetized free layer and an in-plane magnetized pinned layer. We found that the diode voltage for a relatively small applied field is maximized when the projection of the applied field to the film-plane is parallel or anti-parallel to the magnetization of the pinned layer. However, by increasing the applied field magnitude, the optimum applied field direction shifts from the parallel or anti-parallel direction. These analytical predictions were confirmed by numerical simulations.

cond-mat.mes-hall↗

An analysis method for transmission measurements of superconducting resonators with applications to quantum-regime dielectric-loss measurements

Superconducting resonators provide a convenient way to measure loss tangents of various dielectrics at low temperature. For the purpose of examining the microscopic loss mechanisms in dielectrics, precise measurements of the internal quality factor at different values of energy stored in the resonators are required. Here, we present a consistent method to analyze a LC superconducting resonator coupled to a transmission line. We first derive an approximate expression for the transmission S-parameter $S_{21}$ based on a complete circuit model. In the weak coupling limit, we show that the internal quality factor is reliably determined by fitting the approximate form of $S_{21}$. Since the voltage $V$ of the capacitor of the LC circuit is required to determine the energy stored in the resonator, we next calculate the relation between $V$ and the forward propagating wave voltage $V_{in}^+$. Due to the dependence of the quality factor on voltage, $V$ is not simply proportional to $V_{in}^+$. We find a self-consistent way to determine the relation between $V$ and $V_{in}^+$, which employs only the fitting parameters for $S_{21}$ and a linear scaling factor. We then examine the resonator transmission in the cases of port reflection and impedance mismatch. We find that resonator transmission asymmetry is primarily due to the reflection from discontinuity in transmission lines. We show that our analysis method to extract the internal quality factor is robust in the non-ideal cases above. Finally, we show that the analysis method on LC resonator can be generalize to arbitrary weakly coupled lumped and distributed resonators. The generalization uses a systematic approximation on the response function based on the pole and zero which are the closest to the resonance frequency. This Closest Pole and Zero Method (CPZM) is a valuable tool for analyzing physical measurements of high-Q resonators.

cond-mat.mes-hall↗

Redox reactions with empirical potentials: Atomistic battery discharge simulations

Batteries are pivotal components in overcoming some of today's greatest technological challenges. Yet to date there is no self-consistent atomistic description of a complete battery. We take first steps toward modeling of a battery as a whole microscopically. Our focus lies on phenomena occurring at the electrode-electrolyte interface which are not easily studied with other methods. We use the redox split-charge equilibration (redoxSQE) method that assigns a discrete ionization state to each atom. Along with exchanging partial charges across bonds, atoms can swap integer charges. With redoxSQE we study the discharge behavior of a nano-battery, and demonstrate that this reproduces the generic properties of a macroscopic battery qualitatively. Examples are the dependence of the battery's capacity on temperature and discharge rate, as well as performance degradation upon recharge.

cond-mat.mtrl-sci↗

Surfaces of colloidal PbSe nanocrystals probed by thin-film positron annihilation spectroscopy

Positron annihilation lifetime spectroscopy (PALS) and positron-electron momentum density (PEMD) studies on multilayers of PbSe nanocrystals (NCs), supported by transmission electron microscopy (TEM), show that positrons are strongly trapped at NC surfaces, where they provide insight into the surface composition and electronic structure of PbSe NCs. Our analysis indicates abundant annihilation of positrons with Se electrons at the NC surfaces and with O electrons of the oleic ligands bound to Pb ad-atoms at the NC surfaces, which demonstrates that positrons can be used as a sensitive probe to investigate the surface physics and chemistry of nanocrystals inside multilayers. Ab-initio electronic structure calculations provide detailed insight in the valence and semi-core electron contributions to the positron-electron momentum density of PbSe. Both lifetime and PEMD are found to correlate with changes in the particle morphology characteristic of partial ligand removal.

cond-mat.mes-hall↗

Direct Observation of Interface and Nanoscale Compositional Modulation in Ternary III-As Heterostructure Nanowires

Straight, axial InAs nanowire with multiple segments of GaInAs were grown. High resolution X-ray energy-dispersive spectroscopy (EDS) mapping reveal the distribution of group III atoms at the axial interfaces and at the sidewalls. Significant Ga enrichment, accompanied by a structural change is observed at the GaInAs/InAs interfaces and a higher Ga concentration for the early grown GaInAs segments. The elemental map and EDS line profile infer Ga enrichment at the facet junctions between the sidewalls. The relative chemical potentials of ternary alloys and the thermodynamic driving force for liquid to solid transition explains the growth mechanisms behind the enrichment.

cond-mat.mes-hall↗

Etched graphene quantum dots on hexagonal boron nitride

We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on SiO2 no diameter dependency is observed. In addition, QDs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T. Both results indicate a substantially reduced substrate induced disorder potential in graphene QDs on hBN.

cond-mat.mes-hall↗

Large Scale Molecular Dynamics Simulations of Homogeneous Nucleation

We present results from large-scale molecular dynamics (MD) simulations of homogeneous vapor-to-liquid nucleation. The simulations contain between one and eight billion Lennard-Jones (LJ) atoms, covering up to 1.2 μs (56 million time-steps). They cover a wide range of supersaturation ratios, S=1.55 to 10^4, and temperatures from kT = 0.3 to 1.0 ε (where ε is the depth of the LJ potential, and k the Boltzmann constant). We have resolved nucleation rates as low as 10^{17} cm^{-3} s^{-1} (in the argon system), and critical cluster sizes as large as 100 atoms. Recent argon nucleation experiments probe nucleation rates in an overlapping range, making the first direct comparison between laboratory experiments and molecular dynamics simulations possible: We find very good agreement within the uncertainties, which are mainly due to the extrapolations of argon and LJ saturation curves to very low temperatures. The self-consistent, modified classical nucleation model of Girshick and Chiu [J. Chem. Phys. 93, 1273 (1990)] underestimates the nucleation rates by up to 9 orders of magnitudes at low temperatures, and at kT = 1.0 ε it overestimates them by up to 10^5. The predictions from a semi-phenomenological model by Laaksonen et al. [Phys. Rev. E 49, 5517 (1994)] are much closer to our MD results, but still differ by factors of up to 104 in some cases. At low temperatures, the classical theory predicts critical clusters sizes, which match the simulation results (using the first nucleation theorem) quite well, while the semi-phenomenological model slightly underestimates them. At kT = 1.0 ε the critical sizes from both models are clearly too small. (abridged)

physics.chem-ph↗

Fluctuations From Edge Defects in Superconducting Resonators

Superconducting resonators, used in astronomy and quantum computation, couple strongly to microscopic two-level defects. We monitor the microwave response of superconducting resonators and observe fluctuations in dissipation and resonance frequency. We present a unified model where the observed dissipative and dispersive effects can be explained as originating from a bath of fluctuating two-level systems. From these measurements, we quantify the number and distribution of the defects.

cond-mat.mes-hall↗

Modulation of the Optical Transmittance in Multilayer Graphene by an Electrical Signal

The modulation of the optical transmittance in multilayer graphene by means of an electrical signal in the simple configuration of coplanar electrodes is reported. Besides the fundamental frequency of modulation, higher harmonics also appear in the transmitted signal. Modulation is also observed in the optical reflectance. The modulation of the optical properties in multilayer graphene by electrical signals may be useful for the transmission of information by optical means.

cond-mat.mes-hall↗

Efficient demagnetization protocol for the artificial triangular spin ice

In this work we study demagnetization protocols for an artificial spin ice in a triangular geometry. Our results show that a simple hysteresis-like process is very efficient in driving the system to its ground state, even for a relatively strong disorder in the system, confirming previous expectations. In addition, transitions between the magnetized state and the ground state were observed to be mediated by the creation and propagation of vertices that behave like magnetic monopoles pseudo-particles. This is an important step towards a more detailed experimental study of monopole-like excitations in artificial spin ice systems.

cond-mat.mes-hall↗

Anomalously Strong Nonlinearity of Unswept Quartz Acoustic Cavities at Liquid Helium Temperatures

We demonstrate a variety of nonlinear phenomena at extremely low powers in cryogenic acoustic cavities fabricated from quartz material, which have not undergone any electrodiffusion processes. Nonlinear phenomena observed include lineshape discontinuities, power response discontinuities, quadrature oscillations and self-induced transparency. These phenomena are attributed to nonlinear dissipation through a large number of randomly distributed heavy trapped ions, which would normally be removed by electrodiffusion. A simple mean-field model predicts most of the observed phenomena. In contrast to Duffing-like systems, this system shows an unusual mechanism of nonlinearity, which is not related to crystal anharmonisity.

cond-mat.dis-nn↗

Gate depletion of an InSb two-dimensional electron gas

We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of Al0.1In0.9Sb compared to InSb resulted in a linear, sharp, and non-hysteretic response of the 2DEG density to gate bias in the structure with an Al0.1In0.9Sb surface layer. In contrast, a nonlinear, slow, and hysteretic (nonvolatile-memory-like) response was observed in the structure with an InSb surface layer. The 2DEG with the Al0.1In0.9Sb surface layer was completely depleted by application of a small gate voltage (-0.9 V).

cond-mat.mes-hall↗

Controlled assembly of graphene sheets and nanotubes: fabrication of suspended multi-element all-carbon vibrational structures

We report on the fabrication and operation of a multi-element vibrational structure consisting of two graphene mechanical resonators coupled by a nanotube beam. The whole structure is suspended. Each graphene resonator is clamped by two metal electrodes. The structure is fabricated using a combination of electron-beam lithography and atomic-force microscopy nano-manipulation. This layout allows us to detect the mechanical vibrations electrically. The measured eigenmodes are localized in either one of the graphene resonators. The coupling due to the nanotube is studied by measuring the shift of the resonance frequency of one graphene resonator as a function of the vibration amplitude of the other resonator. Coupled graphene resonators hold promise for the study of nonlinear dynamics, the manipulation of mechanical states, and quantum non-demolition measurements.

cond-mat.mes-hall↗

Trap-assisted space charge limited transport in short channel MoS2 transistor

We present temperature dependent $I-V$ measurements of short channel MoS$_2$ field effect devices at high source-drain bias. We find that although the $I-V$ characteristics are Ohmic at low bias, the conduction becomes space charge limited at high $V_{DS}$ and existence of an exponential distribution of trap states was observed. The temperature independent critical drain-source voltage ($V_c$) was also determined. The density of trap states was quantitatively calculated from $V_c$. The possible origin of exponential trap distribution in these devices is also discussed.

cond-mat.mes-hall↗

Quantum charge pumping in graphene-based devices: When lattice defects do help

Quantum charge pumping, the quantum coherent generation of a dc current at zero bias through time dependent potentials, provides outstanding opportunities for metrology and the development of new devices. The long electronic coherence times and high quality of the crystal structure of graphene may provide suitable building blocks for such quantum pumps. Here, we focus in adiabatic quantum pumping through graphene nanoribbons in the Fabry-Pérot regime highlighting the crucial role of defects by using atomistic simulations. We show that even a single defect added to the pristine structure may produce a two orders of magnitude increase in the pumped charge.

cond-mat.mes-hall↗

Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells

We report on the observation of carrier-diffusion-induced defect emission at high excitation density in a-plane InGaN single quantum wells. When increasing excitation density in a relatively high regime, we observed the emergence of defect-related emission together with a significant reduction in bandedge emission efficiency. The experimental results can be well explained with the density-activated carrier diffusion from localized states to defect states. Such a scenario of density-activated defect recombination, as confirmed by the dependences of photoluminescence on the excitation photon energy and temperature, is a plausible origin of efficiency droop in a-plane InGaN quantum-well light-emitting diodes.

cond-mat.mes-hall↗

Tunnel conductance spectroscopy via harmonic generation in a hybrid capacitor device

We address the measurement of density of states within and beyond the superconducting gap in tunnel-coupled finite-size nanostructures using a capacitive method. Third-harmonic generation is used to yield the full differential conductance spectrum without destruction of the low dimensionality otherwise induced by intimate ohmic coupling to an electrode. The method is particularly relevant to attempts to discern the presence of the fragile Majorana quasiparticle at the end of spin-orbit-coupled nanowires in appropriate magnetic field conditions by their signature mid-gap density of states.

cond-mat.mes-hall↗

Surface plasmon polaritons on soft-boundary graphene nanoribbons and their application as voltage controlled plasmonic switches and frequency demultiplexers

A graphene sheet gated with a ridged ground plane, creating a soft-boundary (SB) graphene nanoribbon, is considered. By adjusting the ridge parameters and bias voltage a channel can be created on the graphene which can guide TM surface plasmon polaritons (SPP). Two types of modes are found; fundemental and higher-order modes with no apparent cutoff frequency and with energy distributed over the created channel, and edge modes with energy concen-trated at the soft-boundary edge. Dispersion curves, electric near-field patterns, and current distributions of these modes are determined. Since the location where energy is concentrated in the edge modes can be easily controlled electronically by the bias voltage and frequency, the edge-mode phenomena is used to propose a novel voltage controlled plasmonic switch and a plasmonic frequency demultiplexer.

physics.optics↗