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arXiv2014

The structure and magnetism of graphone

Graphone is a half-hydrogenated graphene. The structure of graphone is illustrated as trigonal adsorption of hydrogen atoms on graphene at first. However, we found the trigonal adsorption is unstable. We present an illustration in detail to explain how a trigonal adsorption geometry evolves into a rectangular adsorption geometry. We check the change of magnetism during the evolution of geometry by evaluating the spin polarization of the intermediate geometries. We prove and clarify that the rectangular adsorption of hydrogen atoms on graphene is the most stable geometry of graphone and graphone is actually antiferromagnetic.

cond-mat.mes-hall↗

arXiv2013

In-plane electronic confinement in superconducting LaAlO$_3$/SrTiO$_3$ nanostructures

We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam lithography. Their detailed characterization shows that processing and confinement do not alter the transport parameters of the 2DEG. The devices exhibit superconducting behavior tunable by electric field effect. In the normal state, we measured universal conductance fluctuations, signature of phase-coherent transport in small structures. The achievement of reliable lateral confinement of the 2DEG opens the way to the realization of quantum electronic devices at the LaAlO$_3$/SrTiO$_3$ interface.

cond-mat.supr-con↗

arXiv2012

Disorder effects on energy bandgap and electronic transport in graphene-nanomesh-based structures

Using atomistic quantum simulation based on a tight binding model, we investigate the formation of energy gap Eg of graphene nanomesh (GNM) lattices and the transport characteristics of GNM-based electronic devices (single potential barrier structure and p-n junction) taking into account the atomic edge disorder of holes. We find that the sensitivity of Eg to the lattice symmetry (i.e., the lattice orientation and the hole shape) is significantly suppressed in the presence of the disorder. In the case of strong disorder, the dependence of Eg on the neck width is fitted well with the scaling rule observed in experiments [Liang et al., Nano Lett. 10, 2454 (2010)]. Considering the transport characteristics of GNM-based structures, we demonstrate that the use of finite GNM sections in the devices can efficiently improve their electrical performance (i.e., high ON/OFF current ratio, good current saturation and negative differential conductance behaviors). Additionally, if the length of GNM sections is appropriately limited, the detrimental effects of disorder on transport can be avoided to a large extent. Our study provides a good explanation of the available experimental data on GNM energy gap and should be helpful for further investigations of GNM-based devices.

cond-mat.mes-hall↗

arXiv2012

Tunneling Spectroscopy of Graphene using Planar Pb Probes

We show that evaporating lead (Pb) directly on graphene can create high-yield, high-quality tunnel probes, and we demonstrate high magnetic field/low temperature spectroscopy using these probes. Comparisons of Pb, Al and Ti/Au probes shows that after oxidation a well-formed self-limited tunnel barrier is created only between the Pb and the graphene. Tunneling spectroscopy using the Pb probes manifests energy-dependent features such as scattering resonances and localization behavior, and can thus be used to probe the microscopic electronics of graphene.

cond-mat.mes-hall↗

arXiv2013

Cavity piezooptomechanics: piezoelectrically excited, optically transduced optomechanical resonators

We present a monolithic integrated aluminum nitride (AlN) optomechanical resonator in which the mechanical motion is actuated by piezoelectric force and the displacement is transduced by a high-Q optical cavity. The AlN optomechanical resonator is excited from a radio-frequency electrode via a small air gap to eliminate resonator-to-electrode loss. We observe the electrically excited mechanical motion at 47.3 MHz, 1.04 GHz, and 3.12 GHz, corresponding to the 1st, 2nd, and 4th radial-contour mode of the wheel resonator respectively. An equivalent circuit model is developed to describe the observed Fano-like resonance spectrum.

cond-mat.mes-hall↗

arXiv2012

Voltage-controlled surface plasmon-polaritons in double graphene layer structures

We study the spectra and damping of surface plasmon-polaritons in double graphene layer structures. It is shown that application of bias voltage between layers shifts the edge of plasmon absorption associated with the interband transitions. This effect could be used in efficient plasmonic modulators. We reveal the influence of spatial dispersion of conductivity on plasmonic spectra and show that it results in the shift of cutoff frequency to the higher values.

cond-mat.mes-hall↗

arXiv2012

Adsorption of lactic acid on chiral Pt surfaces - A Density Functional Theory study

The adsorption of the chiral molecule lactic acid on chiral Pt surfaces is studied by Density Functional Theory calculations. First we study the adsorption of L-lactic acid on the flat Pt(111) surface. Using the oPBE-vdW functional which includes van der Waals forces on an ab initio level, it is shown that the molecule has two binding sites, a carboxyl and the hydroxyl oxygen atoms. Since real chiral surfaces are (i) known to undergo thermal roughening that alters the distribution of kinks and step edges but not the overall chirality and (ii) kink sites and edge sites are usually the energetically most favored adsorption sites, we focus on two surfaces that allow qualitative sampling of the most probable adsorption sites. We hereby consider chiral surfaces exhibiting (111) facets, in particular Pt(321) and Pt(643). The binding sites are either both on kink sites - which is the case for Pt(321) or on one kink site - as on Pt(643). The binding energy of the molecule on the chiral surfaces is much higher than on the Pt(111) surface. We show that the carboxyl group interacts more strongly than the hydroxyl group with the kink sites. The results reveal rather small chiral selectivities on the order of 20 meV for the Pt(321) and Pt(643) surfaces. L-lactic acid is more stable on Pt(321)$^S$ than D-lactic acid, while the chiral selectivity is inverted on Pt(643)$^S$. The most stable adsorption configurations of L- and D-lactic acid are similar for Pt(321) but differ for Pt(643). We explore the impact of the different adsorption geometries on the work function which is important for field ion microscopy.

cond-mat.mtrl-sci↗

arXiv2012

Heat-induced damping modification in YIG/Pt hetero-structures

We experimentally demonstrate the manipulation of magnetization relaxation utilizing a temperature difference across the thickness of an yttrium iron garnet/platinum (YIG/Pt) hetero-structure: the damping is either increased or decreased depending on the sign of the temperature gradient. This effect might be explained by a thermally-induced spin torque on the magnetization precession. The heat-induced variation of the damping is detected by microwave techniques as well as by a DC voltage caused by spin pumping into the adjacent Pt layer and the subsequent conversion into a charge current by the inverse spin Hall effect.

cond-mat.mes-hall↗

arXiv2013

Optical absorption and emission of silicon nanocrystals: From single to collective response

We report on the possibility of describing the absorption and emission characteristics of an ensemble of silicon nanocrystals (NCs) with realistic distributions in the NC size, by the sum of the reponses of the single NCs. The individual NC responses are evaluated by means of ab-initio theoretical calculations and the summation is performed by taking into account the trend of the optical properties as a function of NC size and oxidation degree. The comparison with experimental results shows a nice matching of the spectra, also without any tuning of the parameters. Finally, the possibility of adapting the model in order to reproduce the experimental data is explored and discussed.

cond-mat.mes-hall↗

arXiv2013

Niobium nitride-based normal metal-insulator-superconductor tunnel junction microthermometer

We have successfully fabricated micron-scale Cu-AlO$_{x} $-Al-NbN normal metal-insulator-superconductor (NIS) tunnel junction devices, using pulsed laser deposition (PLD) for NbN film growth, and electron-beam lithography and shadow evaporation for the final device fabrication. The subgap conductance of these devices exhibit a strong temperature dependence, rendering them suitable for thermometry from $\sim$ 0.1 K all the way up to the superconducting transition temperature of the NbN layer, which was here $\sim 11$ K, but could be extended up to $\sim 16$ K in our PLD chamber. Our data fits well to the single particle NIS tunnel junction theory, with an observed proximised superconducting gap value $\sim $ 1 meV for a 40 nm thick Al overlayer. Although this high value of the superconducting energy gap is promising for potential electronic NIS cooling applications as well, the high value of the tunneling resistance inhibits electronic cooling in the present devices. Such opaque barriers are, however, ideal for thermometry purposes as self-induced thermal effects are thus minimized.

cond-mat.supr-con↗

arXiv2012

Optimisation of NbN thin films on GaAs substrates for in-situ single photon detection in structured photonic devices

We prepare NbN thin films by DC magnetron sputtering on [100] GaAs substrates, optimise their quality and demonstrate their use for efficient single photon detection in the near-infrared. The interrelation between the Nb:N content, growth temperature and crystal quality is established for 4-22nm thick films. Optimised films exhibit a superconducting critical temperature of 12.6\pm0.2K for a film thickness of 22\pm0.5nm and 10.2\pm0.2K for 4\pm0.5nm thick films. The optimum growth temperature is shown to be ~475°C reflecting a trade-off between enhanced surface diffusion, which improves the crystal quality, and arsenic evaporation from the GaAs substrate. Analysis of the elemental composition of the films provides strong evidence that the δ-phase of NbN is formed in optimised samples, controlled primarily via the nitrogen partial pressure during growth. By patterning optimum 4nm and 22nm thick films into a 100nm wide, 369μm long nanowire meander using electron beam lithography and reactive ion etching, we fabricated single photon detectors on GaAs substrates. Time-resolved studies of the photo-response, absolute detection efficiency and dark count rates of these detectors as a function of the bias current reveal maximum single photon detection efficiencies as high as 21\pm2% at 4.3\pm0.1K with ~50k dark counts per second for bias currents of 98%Ic at a wavelength of 950nm. As expected, similar detectors fabricated from 22nm thick films exhibit much lower efficiencies (0.004%) with very low dark count rates <=3cps. The maximum lateral extension of a photo-generated hotspot is estimated to be 30\pm8nm, clearly identifying the low detection efficiency and dark count rate of the thick film detectors as arising from hotspot cooling via the heat reservoir provided by the NbN film.

cond-mat.supr-con↗

arXiv2012

Aging and reduced bulk conductance in thin films of the topological insulator Bi$_2$Se$_3$

We report on the effect of exposure to atmospheric conditions on the THz conductivity of thin films of the topological insulator Bi$_2$Se$_3$. We find: 1) two contributions of mobile charge carriers to the THz conductivity immediately after growth, and 2) the spectral weight of the smaller of these decays significantly over a period of several days as the film is exposed to ambient conditions, while the other remains relatively constant. We associate the former with a bulk response, and the latter with the surface. The surface response exhibits the expected robustness of the carriers from 2D topological surface states. We find no evidence for a third spectral feature derived from topologically trivial surface states.

cond-mat.str-el↗

arXiv2013

The impact of edges and dopants on the work function of graphene nanostructures. The way to high electronic emission from pure carbon medium

The impact of the edges and presence of dopants to the work function (WF) of graphene nanoribbons (GNR) and nanoflakes was studied by an ab initio approach. The strong dependence of the WF upon the GNR structure was found and a promising character for the field emission by the donor type impurities was observed. Basing on the predominant impact of the nanostructure edges to the emission properties, the small graphene flakes were investigated as a possible source for the electron emission. The obtained weak dependence of the low WF values of the graphene flakes on their size and shape allows to suggest that the pure carbon medium with high and uniform emission properties can be fabricated by today technology.

cond-mat.mes-hall↗

arXiv2013

Intrinsic and extrinsic origins of low-frequency noise in GaAs/AlGaAs Schottky-gated nanostructures

We study low-frequency noise in current passing through quantum point contacts fabricated from several GaAs/AlGaAs heterostructures with different layer structures and fabrication processes. In contrast to previous reports, there is no gate-dependent random telegraph noise (RTN) originating from tunneling through a Schottky barrier in devices fabricated using the standard low-damage process. Gate-dependent RTN appears only in devices fabricated with a high-damage process that induces charge trap sites. We show that the insertion of AlAs/GaAs superlattices in the AlGaAs barrier helps to suppress trap formation. Our results enable the fabrication of damage-resistant and thus low-noise devices.

cond-mat.mes-hall↗

arXiv2013

Transport properties and electrical device characteristics with the TiMeS computational platform: application in silicon nanowires

Nanoelectronics requires the development of a priori technology evaluation for materials and device design that takes into account quantum physical effects and the explicit chemical nature at the atomic scale. Here, we present a cross-platform quantum transport computation tool. Using first-principles electronic structure, it allows for flexible and efficient calculations of materials transport properties and realistic device simulations to extract current-voltage and transfer characteristics. We apply this computational method to the calculation of the mean free path in silicon nanowires with dopant and surface oxygen impurities. The dependence of transport on basis set is established, with the optimized double zeta polarized basis giving a reasonable compromise between converged results and efficiency. The current-voltage characteristics of ultrascaled (3 nm length) nanowire-based transistors with p-i-p and p-n-p doping profiles are also investigated. It is found that charge self-consistency affects the device characteristics more significantly than the choice of the basis set. These devices yield source-drain tunneling currents in the range of 0.5 nA (p-n-p junction) to 2 nA (p-i-p junction), implying that junctioned transistor designs at these length scales would likely fail to keep carriers out of the channel in the off-state.

cond-mat.mes-hall↗

arXiv2013

A micro-structured ion-implanted magnonic crystal

We investigate spin-wave propagation in a microstructured magnonic-crystal waveguide fabricated by localized ion implantation. The irradiation caused a periodic variation in the saturation magnetization along the waveguide. As a consequence, the spin-wave transmission spectrum exhibits a set of frequency bands, where spin-wave propagation is suppressed. A weak modification of the saturation magnetization by 7% is sufficient to decrease the spin-wave transmission in the band gaps by a factor of 10. These results evidence the applicability of localized ion implantation for the fabrication of efficient micron- and nano-sized magnonic crystals for magnon spintronic applications.

cond-mat.mes-hall↗

arXiv2013

Enhancement of pinning properties of superconducting thin films by graded pinning landscapes

A graded distribution of pinning centers (antidots) in superconducting MoGe thin films has been investigated by magnetization and magneto-optical imaging. The pinning landscape has maximum density at the border, decreasing progressively towards the center. At high temperatures and low fields, where this landscape mimics the vortex distribution predicted by the Bean model, an increase of the critical current is observed. At low temperatures and fields, the superconducting performance of the non-uniform sample is also improved due to suppression of thermomagnetic avalanches. These findings emphasize the relevance of non-uniform pinning landscapes, so far experimentally unexplored, on the enhancement of pinning efficiency.

cond-mat.supr-con↗

arXiv2013

The effect of shape anisotropy on the spectroscopic characterization of the magneto-optical activity of nanostructures

How to measure magnetic field induced magneto-optical (MO) activity of nonmagnetic elliptical plasmonic nanodisks which rest on a dielectric substrate remains a challenge since the substrate contribute most of the overall MO which varies with light polarization with respect to the orientation of the nanodisks. Here we present a spectroscopic characterization. We find that only when light is incident from the nanostructures side with polarization aligned with one of the two symmetry axes, one can subtract the MO contribution from the substrate by an amount equal to that of a bare one. By a detailed polarizing transmittance measurement we determine the orientation of the two symmetry axes of the nanodisks. Light polarization is then aligned along the axes, enabling measurement of the intrinsic MO activity of gold nanodisks, which is the overall MO activity subtracted by that of a bare glass substrate. The narrow line widths of the plasmonic resonance features in the MO spectra imply a potential application in refractive index sensing.

physics.optics↗