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arXiv2013

Dual origin of defect magnetism in graphene and its reversible switching by molecular doping

A possibility to control magnetic properties by using electric fields is one of the most desirable characteristics for spintronics applications. Finding a suitable material remains an elusive goal, with only a few candidates found so far. Graphene is one of them and offers a hope due to its weak spin-orbit interaction, the ability to control electronic properties by the electric field effect and the possibility to introduce paramagnetic centres such as vacancies and adatoms. Here we show that adatoms magnetism in graphene is itinerant and can be controlled by doping, so that magnetic moments can be switched on and off. The much-discussed vacancy magnetism is found to have a dual origin, with two approximately equal contributions: one coming from the same itinerant magnetism and the other due to broken bonds. Our work suggests that magnetic response of graphene can be controlled by the field effect, similar to its transport and optical properties, and that spin diffusion length can be significantly enhanced above a certain carrier density.

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arXiv2012

Coherent Topological Transport on the Surface of Bi2Se3

The two-dimensional (2D) surface state of the three-dimensional strong topological insulator (STI) is fundamentally distinct from other 2D electron systems in that the Fermi arc encircles an odd number of Dirac points. The TI surface is in the symplectic universality class and uniquely among 2D systems remains metallic and cannot be localized by (time-reversal symmetric) disorder. However, in finite-size samples inter-surface coupling can destroy the topological protection. The question arises: At what size can a thin TI sample be treated as having decoupled topological surface states? We show that weak anti-localization(WAL) is extraordinarily sensitive to sub-meV coupling between top and bottom topological surfaces, and the surfaces of a TI film may be coherently coupled even for thicknesses as large as 12 nm. For thicker films we observe the signature of a true 2D topological metal: perfect weak anti-localization in quantitative agreement with two decoupled surfaces in the symplectic symmetry class.

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arXiv2013

Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting

Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we demonstrate that valley separation can be accurately tuned via electrostatic gate control in a metal-oxide-semiconductor quantum dot, providing splittings spanning 0.3 - 0.8 meV. The splitting varies linearly with applied electric field, with a ratio in agreement with atomistic tight-binding predictions. We demonstrate single-shot spin readout and measure the spin relaxation for different valley configurations and dot occupancies, finding one-electron lifetimes exceeding 2 seconds. Spin relaxation occurs via phonon emission due to spin-orbit coupling between the valley states, a process not previously anticipated for silicon quantum dots. An analytical theory describes the magnetic field dependence of the relaxation rate, including the presence of a dramatic rate enhancement (or hot-spot) when Zeeman and valley splittings coincide.

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arXiv2013

Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique

There has been much interest in the injection and detection of spin polarized carriers in semiconductors for the purposes of developing novel spintronic devices. Here we report the electrical injection and detection of spin-polarized carriers into Nb-doped strontium titanate (STO) single crystals and La-doped STO epitaxial thin films using MgO tunnel barriers and the three-terminal Hanle technique. Spin lifetimes of up to ~100 ps are measured at room temperature and vary little as the temperature is decreased to low temperatures. However, the mobility of the STO has a strong temperature dependence. This behavior and the carrier doping dependence of the spin lifetime suggest that the spin lifetime is limited by spin-dependent scattering at the MgO/STO interfaces, perhaps related to the formation of doping induced Ti3+. Our results reveal a severe limitation of the three-terminal Hanle technique for measuring spin lifetimes within the interior of the subject material.

cond-mat.mtrl-sci↗

arXiv2013

Cooling-by-measurement and mechanical state tomography via pulsed optomechanics

Observing a physical quantity without disturbing it is a key capability for the control of individual quantum systems. Such back-action-evading or quantum-non-demolition measurements were first introduced in the 1970s in the context of gravitational wave detection to measure weak forces on test masses by high precision monitoring of their motion. Now, such techniques have become an indispensable tool in quantum science for preparing, manipulating, and detecting quantum states of light, atoms, and other quantum systems. Here we experimentally perform rapid optical quantum-noise-limited measurements of the position of a mechanical oscillator by using pulses of light with a duration much shorter than a period of mechanical motion. Using this back-action evading interaction we performed both state preparation and full state tomography of the mechanical motional state. We have reconstructed mechanical states with a position uncertainty reduced to 19 pm, limited by the quantum fluctuations of the optical pulse, and we have performed `cooling-by-measurement' to reduce the mechanical mode temperature from an initial 1100 K to 16 K. Future improvements to this technique may allow for quantum squeezing of mechanical motion, even from room temperature, and reconstruction of non-classical states exhibiting negative regions in their phase-space quasi-probability distribution.

quant-ph↗

arXiv2013

Ballistic interferences in suspended graphene

Graphene is a 2-dimensional (2D) carbon allotrope with the atoms arranged in a honeycomb lattice. The low-energy electronic excitations in this 2D crystal are described by massless Dirac fermions that have a linear dispersion relation similar to photons. Taking advantage of this optics-like electron dynamics, generic optical elements like lenses, beam splitters and wave guides have been proposed for electrons in engineered ballistic graphene. Tuning of these elements relies on the ability to adjust the carrier concentration in defined areas, including the possibility to create bipolar regions of opposite charge (p-n regions). However, the combination of ballistic transport and complex electrostatic gating remains challenging. Here, we report on the fabrication and characterization of fully suspended graphene p-n junctions. By local electro-static gating, resonant cavities can be defined, leading to complex Fabry-Perot interference patterns in the unipolar and the bipolar regime. The amplitude of the observed conductance oscillations accounts for quantum interference of electrons that propagate ballistically over long distances exceeding 1 micron. We also demonstrate that the visibility of the interference pattern is enhanced by Klein collimation at the p-n interface. This finding paves the way to more complex gate-controlled ballistic graphene devices and brings electron optics in graphene closer to reality.

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arXiv2013

Topological Superfluids with Finite Momentum Pairing and Majorana Fermions

Majorana fermions, quantum particles that are their own anti-particles, are not only of fundamental importance in elementary particle physics and dark matter, but also building blocks for fault-tolerant quantum computation. Recently Majorana fermions have been intensively studied in solid state and cold atomic systems. These studies are generally based on superconducting pairing between two Fermions with opposite momenta (\textit{% i.e.}, zero total momentum). On the other hand, finite total momentum Cooper pairings, known as Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) states, were predicted 50 years ago and then widely studied in many branches of physics. However, whether FFLO superconductors can also support Majorana fermions has not been explored. Here we show that Majorana fermions can exist in certain types of gapped FFLO states, yielding a new topological quantum matter: topological FFLO superfluids/superconductors. We demonstrate the existence of such topological FFLO superfluids and the associated Majorana fermions using spin-orbit coupled degenerate Fermi gases and derive their physical parameter regions. The potential implementation of topological FFLO superconductors in semiconductor/superconductor heterostructures are also discussed.

cond-mat.quant-gas↗

arXiv2013

The mechanism of caesium intercalation of graphene

Properties of many layered materials, including copper- and iron-based superconductors, topological insulators, graphite and epitaxial graphene can be manipulated by inclusion of different atomic and molecular species between the layers via a process known as intercalation. For example, intercalation in graphite can lead to superconductivity and is crucial in the working cycle of modern batteries and supercapacitors. Intercalation involves complex diffusion processes along and across the layers, but the microscopic mechanisms and dynamics of these processes are not well understood. Here we report on a novel mechanism for intercalation and entrapment of alkali-atoms under epitaxial graphene. We find that the intercalation is adjusted by the van der Waals interaction, with the dynamics governed by defects anchored to graphene wrinkles. Our findings are relevant for the future design and application of graphene-based nano-structures. Similar mechanisms can also play a role for intercalation of layered materials.

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arXiv2013

Symmetry breaking in a mechanical resonator made from a carbon nanotube

Nanotubes behave as semi-flexible polymers in that they can bend by a sizeable amount. When integrating a nanotube in a mechanical resonator, the bending is expected to break the symmetry of the restoring potential. Here we report on a new detection method that allows us to demonstrate such symmetry breaking. The method probes the motion of the nanotube resonator at nearly zero-frequency; this motion is the low-frequency counterpart of the second overtone of resonantly excited vibrations. We find that symmetry breaking leads to the spectral broadening of mechanical resonances, and to an apparent quality factor that drops below 100 at room temperature. The low quality factor at room temperature is a striking feature of nanotube resonators whose origin has remained elusive for many years. Our results shed light on the role played by symmetry breaking in the mechanics of nanotube resonators.

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arXiv2013

Tuning a Schottky barrier in a photoexcited topological insulator with transient Dirac cone electron-hole asymmetry

The advent of Dirac materials has made it possible to realize two dimensional gases of relativistic fermions with unprecedented transport properties in condensed matter. Their photoconductive control with ultrafast light pulses is opening new perspectives for the transmission of current and information. Here we show that the interplay of surface and bulk transient carrier dynamics in a photoexcited topological insulator can control an essential parameter for photoconductivity - the balance between excess electrons and holes in the Dirac cone. This can result in a strongly out of equilibrium gas of hot relativistic fermions, characterized by a surprisingly long lifetime of more than 50 ps, and a simultaneous transient shift of chemical potential by as much as 100 meV. The unique properties of this transient Dirac cone make it possible to tune with ultrafast light pulses a relativistic nanoscale Schottky barrier, in a way that is impossible with conventional optoelectronic materials.

cond-mat.mtrl-sci↗

arXiv2013

Fast coherent manipulation of three-electron states in a double quantum dot

A fundamental goal in the manipulation of quantum systems is the achievement of many coherent oscillations within the characteristic dephasing time T2*[1]. Most manipulations of electron spins in quantum dots have focused on the construction and control of two-state quantum systems, or qubits, in which each quantum dot is occupied by a single electron[2-7]. Here we perform quantum manipulations on a system with more electrons per quantum dot, in a double dot with three electrons. We demonstrate that tailored pulse sequences can be used to induce coherent rotations between 3-electron quantum states. Certain pulse sequences yield coherent oscillations with a very high figure of merit (the ratio of coherence time to rotation time) of >100. The presence of the third electron enables very fast rotations to all possible states, in contrast to the case when only two electrons are used, in which some rotations are slow. The minimum oscillation frequency we observe is >5 GHz.

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arXiv2014

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide (MoS2) grown by chemical vapour deposition (CVD). We show that these devices have the potential to suppress short channel effects and have high critical breakdown electric field. However, our study reveals that the electronic properties of these devices are at present, severely limited by the presence of a significant amount of band tail trapping states. Through capacitance and ac conductance measurements, we systematically quantify the density-of-states and response time of these states. Due to the large amount of trapped charges, the measured effective mobility also leads to a large underestimation of the true band mobility and the potential of the material. Continual engineering efforts on improving the sample quality are needed for its potential applications.

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arXiv2013

Designing quantum dots for solotronics

Solotronics, optoelectronics based on solitary dopants, is an emerging field of research and technology reaching the ultimate limit of miniaturization. It aims at exploiting quantum properties of individual ions or defects embedded in a semiconductor matrix. As already shown, optical control of a spin of a magnetic ion is feasible employing photo-generated carriers confined in a quantum dot. A non-radiative recombination, regarded as a severe problem, limited development of quantum dots with magnetic ions. Our photoluminescence studies on, so far unexplored, individual CdTe dots with single cobalt ions and individual CdSe dots with single manganese ions show, however, that even if energetically allowed, the single ion related non-radiative recombination is negligible in such zero-dimensional structures. This opens solotronics for a wide range of even not yet considered systems. Basing on the results of our single spin relaxation experiments and on the material trends, we identify optimal magnetic ion-quantum dot systems for implementation of a single-ion based spin memory.

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arXiv2014

Giant magnetic anisotropy and tunnelling of the magnetization in Li2(Li_{1-x}Fe_x)N

Large magnetic anisotropy and coercivity are key properties of functional magnetic materials and are generally associated with rare earth elements. Here we show an extreme, uniaxial magnetic anisotropy and the emergence of magnetic hysteresis in Li2(Li1-xFex)N. An extrapolated, magnetic anisotropy field of 220 Tesla and a coercivity field of over 11 Tesla at 2 Kelvin outperform all known hard-ferromagnets and single-molecule magnets (SMMs). Steps in the hysteresis loops and relaxation phenomena in striking similarity to SMMs are particularly pronounced for x << 1 and indicate the presence of nano-scale magnetic centres. Quantum tunnelling, in form of temperature-independent relaxation and coercivity, deviation from Arrhenius behaviour and blocking of the relaxation, dominates the magnetic properties up to 10 Kelvin. The simple crystal structure, the availability of large single crystals, and the ability to vary the Fe concentration make Li2(Li1-xFex)N (i) an ideal model system to study macroscopic quantum effects at elevated temperatures and (ii) a basis for novel functional magnetic materials.

cond-mat.str-el↗

arXiv2013

Mobility engineering and metal-insulator transition in monolayer MoS2

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered materials such as semiconducting dichalcogenides MoS2 or WSe2 are gaining in importance as promising insulators and channel materials for field-effect transistors (FETs). The presence of a direct band gap in monolayer MoS2 due to quantum mechanical confinement, allows room-temperature field-effect transistors with an on/off ratio exceeding 108. The presence of high-k dielectrics in these devices enhanced their mobility, but the mechanisms are not well understood. Here, we report on electrical transport measurements on MoS2 FETs in different dielectric configurations. Mobility dependence on temperature shows clear evidence of the strong suppression of charge impurity scattering in dual-gate devices with a top-gate dielectric together with phonon scattering that shows a weaker than expected temperature dependence. High levels of doping achieved in dual-gate devices also allow the observation of a metal-insulator transition in monolayer MoS2. Our work opens up the way to further improvements in 2D semiconductor performance and introduces MoS2 as an interesting system for studying correlation effects in mesoscopic systems.

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arXiv2013

Local Electrostatic Imaging of Striped Domain Order in LaAlO3/SrTiO3

The emerging field of complex oxide interfaces is generically built on one of the most celebrated substrates - strontium titanate (SrTiO3). This material hosts a range of phenomena, including ferroelasticity, incipient ferroelectricity, and most puzzlingly, contested giant piezoelectricity. Although these properties may markedly influence the oxide interfaces, especially on microscopic length scales, the lack of local probes capable of studying such buried systems has left their effects largely unexplored. Here we use a scanning charge detector - a nanotube single-electron transistor - to noninvasively image the electrostatic landscape and local mechanical response in the prototypical LaAlO3/SrTiO3 system with unprecedented sensitivity. Our measurements reveal that on microscopic scales SrTiO3 exhibits large anomalous piezoelectricity with curious spatial dependence. Through electrostatic imaging we unravel the microscopic origin for this extrinsic piezoelectricity, demonstrating its direct, quantitative connection to the motion of locally ordered tetragonal domains under applied gate voltage. These domains create striped potential modulations that can markedly influence the two-dimensional electron system at the conducting interface. Our results have broad implications to all complex oxide interfaces built on SrTiO3 and demonstrate the importance of microscopic structure to the physics of electrons at the LaAlO3/SrTiO3 interface.

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arXiv2014

Spin torque building blocks

The discovery of the spin torque effect has made magnetic nanodevices realistic candidates for active elements of memory devices and applications. Magnetoresistive effects allow the read-out of increasingly small magnetic bits, and the spin torque provides an efficient tool to manipulate - precisely, rapidly and at low energy cost - the magnetic state, which is in turn the central information medium of spintronic devices. By keeping the same magnetic stack, but by tuning a device's shape and bias conditions, the spin torque can be engineered to build a variety of advanced magnetic nanodevices. Here we show that by assembling these nanodevices as building blocks with different functionalities, novel types of computing architectures can be envisisaged. We focus in particular on recent concepts such as magnonics and spintronic neural networks.

cond-mat.mtrl-sci↗

arXiv2013

Spin-filtered Edge States with an Electrically Tunable Gap in a Two-Dimensional Topological Crystalline Insulator

Three-dimensional topological crystalline insulators were recently predicted and observed in the SnTe class of IV-VI semiconductors, which host metallic surface states protected by crystal symmetries. In this work, we study thin films of these materials and expose their potential for device applications. We demonstrate that thin films of SnTe and Pb(1-x)Sn(x)Se(Te) grown along the (001) direction are topologically nontrivial in a wide range of film thickness and carry conducting spin-filtered edge states that are protected by the (001) mirror symmetry via a topological invariant. Application of an electric field perpendicular to the film will break the mirror symmetry and generate a band gap in these edge states. This functionality motivates us to propose a novel topological transistor device, in which charge and spin transport are maximally entangled and simultaneously controlled by an electric field. The high on/off operation speed and coupling of spin and charge in such a device may lead to electronic and spintronic applications for topological crystalline insulators.

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