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Control of Radiation Damage in MoS2 by Graphene Encapsulation

Recent dramatic progress in studying various two-dimensional (2D) atomic crystals and their heterostructures calls for better and more detailed understanding of their crystallography, reconstruction, stacking order, etc. For this, direct imaging and identification of each and every atom is essential. Transmission Electron Microscopy (TEM) and Scanning Transmission Electron Microscopy (STEM) are ideal, and perhaps the only tools for such studies. However, the electron beam can in some cases induce dramatic structure changes and radiation damage becomes an obstacle in obtaining the desired information in imaging and chemical analysis in the (S)TEM. This is the case of 2D materials such as molybdenum disulfide MoS2, but also of many biological specimens, molecules and proteins. Thus, minimizing damage to the specimen is essential for optimum microscopic analysis. In this letter we demonstrate, on the example of MoS2, that encapsulation of such crystals between two layers of graphene allows for a dramatic improvement in stability of the studied 2D crystal, and permits careful control over the defect nature and formation in it. We present STEM data collected from single layer MoS2 samples prepared for observation in the microscope through three distinct procedures. The fabricated single layer MoS2 samples were either left bare (pristine), placed atop a single-layer of graphene or finally encapsulated between single graphene layers. Their behaviour under the electron beam is carefully compared and we show that the MoS2 sample 'sandwiched' between the graphene layers has the highest durability and lowest defect formation rate compared to the other two samples, for very similar experimental conditions.

cond-mat.mes-hall↗

Ultrafast Energy Transfer Between Molecular Assemblies and Surface Plasmons in the Strong Coupling Regime

The nonlinear optical dynamics of nano-materials comprised of plasmons interacting with quantum emitters is investigated by a self-consistent model based on the coupled Maxwell-Liouville-von Neumann equations. It is shown that ultra-short resonant laser pulses significantly modify the optical properties of such hybrid systems. It is further demonstrated that the energy transfer between interacting molecules and plasmons occurs on a femtosecond time scale and can be controlled with both material and laser parameters.

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Low-Contact-Resistance Graphene Devices with Nickel-Etched-Graphene Contacts

The performance of graphene-based transistors is often limited by the large electrical resistance across the metal-graphene contact. We report an approach to achieve ultra-low resistance metal contacts to graphene transistors. Through a process of metal-catalyzed etching in hydrogen, multiple nano-sized pits with zigzag edges are created in the graphene that form strong chemical bonds with deposited nickel metallization for source-drain contacts without the need for further annealing. This facile contact treatment prior to electrode metallization results in contact resistance as low as 100 ohm-um in single-layer graphene field-effect transistors, and 11 ohm-um in bilayer graphene transistors. The treatment is compatible with complementary metal-oxide-semiconductor fabrication processes, and holds great promise to meet the contact performance required for the integration of graphene in future integrated circuits.

cond-mat.mes-hall↗

Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers

In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length changes, we find that the contact resistivity for metal/MoS2 junctions is defined by contact area instead of contact width. The minimum gate dependent transfer length is ~0.63 μm in the on-state for metal (Ti) contacted single-layer MoS2. These results reveal that MoS2 transistors are Schottky barrier transistors, where the on/off states are switched by the tuning the Schottky barriers at contacts. The effective barrier heights for source and drain barriers are primarily controlled by gate and drain biases, respectively. We discuss the drain induced barrier narrowing effect for short channel devices, which may reduce the influence of large contact resistance for MoS2 Schottky barrier transistors at the channel length scaling limit.

cond-mat.mes-hall↗

Quantitative Chemistry and the Discrete Geometry of Conformal Atom-Thin Crystals

When flat or on a firm mechanical substrate, the atomic composition and atomistic structure of two-dimensional crystals dictate their chemical, electronic, optical, and mechanical properties. These properties change when the two-dimensional and ideal crystal structure evolves into arbitrary shapes, providing a direct and dramatic link among geometry and material properties due to the larger structural flexibility when compared to bulk three-dimensional materials. We describe methods to understand the local geometrical information of two-dimensional conformal crystals quantitatively and directly from atomic positions, even in the presence of atomistic defects. We then discuss direct relations among the discrete geometry and chemically-relevant quantities --mean-bond-lengths, hybridization angles and $σ-π$ hybridization. These concepts are illustrated for carbon-based materials and ionic crystals. The piramidalization angle turns out to be linearly proportional to the mean curvature for relevant crystalline configurations. Discrete geometry provides direct quantitative information on the potential chemistry of conformal two-dimensional crystals.

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Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Towards that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.

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Light Generation and Harvesting in a Van der Waals Heterostructure

Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of semiconducting transition metal dichalcogenides MoS2 or WSe2 have been proposed as promising channel materials for field-effect transistors (FETs). Their high mechanical flexibility, stability and quality coupled with potentially inexpensive production methods offer potential advantages compared to organic and crystalline bulk semiconductors. Due to quantum mechanical confinement, the band gap in monolayer MoS2 is direct in nature, leading to a strong interaction with light that can be exploited for building phototransistors and ultrasensitive photodetectors. Here, we report on the realization of light-emitting diodes based on vertical heterojunctions composed of n-type monolayer MoS2 and p-type silicon. Careful interface engineering allows us to realize diodes showing rectification and light emission from the entire surface of the heterojunction. Electroluminescence spectra show clear signs of direct excitons related to the optical transitions between the conduction and valence bands. Our pn diodes can also operate as solar cells, with typical external quantum efficiency exceeding 4%. Our work opens up the way to more sophisticated optoelectronic devices such as lasers and heterostructure solar cells based on hybrids of two-dimensional (2D) semiconductors and silicon.

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Heat dissipation in atomic-scale junctions

Atomic and single-molecule junctions represent the ultimate limit to the miniaturization of electrical circuits. They are also ideal platforms to test quantum transport theories that are required to describe charge and energy transfer in novel functional nanodevices. Recent work has successfully probed electric and thermoelectric phenomena in atomic-scale junctions. However, heat dissipation and transport in atomic-scale devices remain poorly characterized due to experimental challenges. Here, using custom-fabricated scanning probes with integrated nanoscale thermocouples, we show that heat dissipation in the electrodes of molecular junctions, whose transmission characteristics are strongly dependent on energy, is asymmetric, i.e. unequal and dependent on both the bias polarity and the identity of majority charge carriers (electrons vs. holes). In contrast, atomic junctions whose transmission characteristics show weak energy dependence do not exhibit appreciable asymmetry. Our results unambiguously relate the electronic transmission characteristics of atomic-scale junctions to their heat dissipation properties establishing a framework for understanding heat dissipation in a range of mesoscopic systems where transport is elastic. We anticipate that the techniques established here will enable the study of Peltier effects at the atomic scale, a field that has been barely explored experimentally despite interesting theoretical predictions. Furthermore, the experimental advances described here are also expected to enable the study of heat transport in atomic and molecular junctions, which is an important and challenging scientific and technological goal that has remained elusive.

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Cloning of Dirac fermions in graphene superlattices

Lateral superlattices have attracted major interest as this may allow one to modify spectra of two dimensional electron systems and, ultimately, create materials with tailored electronic properties. Previously, it proved difficult to realize superlattices with sufficiently short periodicity and weak disorder, and most of the observed features could be explained in terms of commensurate cyclotron orbits. Evidence for the formation of superlattice minibands (so called Hofstadter's butterfly) has been limited to the observation of new low-field oscillations and an internal structure within Landau levels. Here we report transport properties of graphene placed on a boron nitride substrate and accurately aligned along its crystallographic directions. The substrate's moire potential leads to profound changes in graphene's electronic spectrum. Second-generation Dirac points appear as pronounced peaks in resistivity accompanied by reversal of the Hall effect. The latter indicates that the sign of the effective mass changes within graphene's conduction and valence bands. Quantizing magnetic fields lead to Zak-type cloning of the third generation of Dirac points that are observed as numerous neutrality points in fields where a unit fraction of the flux quantum pierces the superlattice unit cell. Graphene superlattices open a venue to study the rich physics expected for incommensurable quantum systems and illustrate the possibility to controllably modify electronic spectra of 2D atomic crystals by using their crystallographic alignment within van der Waals heterostuctures.

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Suppression of the radiative decay of atomic coherence in squeezed vacuum

Quantum fluctuations of the electromagnetic vacuum are responsible for physical effects such as the Casimir force and the radiative decay of atoms, and set fundamental limits on the sensitivity of measurements. Entanglement between photons can produce correlations that result in a reduction of these fluctuations below the vacuum level allowing measurements that surpass the standard quantum limit in sensitivity. Here we demonstrate that the radiative decay rate of an atom that is coupled to quadrature squeezed electromagnetic vacuum can be reduced below its natural linewidth. We observe a two-fold reduction of the transverse radiative decay rate of a superconducting artificial atom coupled to continuum squeezed vacuum generated by a Josephson parametric amplifier, allowing the transverse coherence time T_2 to exceed the vacuum decay limit of 2T_1. We demonstrate that the measured radiative decay dynamics can be used to tomographically reconstruct the Wigner distribution of the the itinerant squeezed state. Our results are the first confirmation of a canonical prediction of quantum optics and open the door to new studies of the quantum light-matter interaction.

quant-ph↗

Exciting Andreev pairs in a superconducting atomic contact

The Josephson effect describes the flow of supercurrent in a weak link, such as a tunnel junction, nanowire, or molecule, between two superconductors. It is the basis for a variety of circuits and devices, with applications ranging from medicine to quantum information. Currently, experiments using Josephson circuits that behave like artificial atoms are revolutionizing the way we probe and exploit the laws of quantum physics. Microscopically, the supercurrent is carried by Andreev pair states, which are localized at the weak link. These states come in doublets and have energies inside the superconducting gap. Existing Josephson circuits are based on properties of just the ground state of each doublet and so far the excited states have not been directly detected. Here we establish their existence through spectroscopic measurements of superconducting atomic contacts. The spectra, which depend on the atomic configuration and on the phase difference between the superconductors, are in complete agreement with theory. Andreev doublets could be exploited to encode information in novel types of superconducting qubits.

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Van der Waals heterostructures

Research on graphene and other two-dimensional atomic crystals is intense and likely to remain one of the hottest topics in condensed matter physics and materials science for many years. Looking beyond this field, isolated atomic planes can also be reassembled into designer heterostructures made layer by layer in a precisely chosen sequence. The first - already remarkably complex - such heterostructures (referred to as 'van der Waals') have recently been fabricated and investigated revealing unusual properties and new phenomena. Here we review this emerging research area and attempt to identify future directions. With steady improvement in fabrication techniques, van der Waals heterostructures promise a new gold rush, rather than a graphene aftershock.

cond-mat.mtrl-sci↗

Odd and even Kondo effects from emergent localisation in quantum point contacts

A quantum point contact (QPC) is a very basic nano-electronic device: a short and narrow transport channel between two electron reservoirs. In clean channels electron transport is ballistic and the conductance $G$ is then quantised as a function of channel width with plateaus at integer multiples of $2e^2/h$ ($e$ is the electron charge and $h$ Planck's constant). This can be understood in a picture where the electron states are propagating waves, without need to account for electron-electron interactions. Quantised conductance could thus be the signature of ultimate control over nanoscale electron transport. However, even studies with the cleanest QPCs generically show significant anomalies on the quantised conductance traces and there is consensus that these result from electron many-body effects. Despite extensive experimental and theoretical studies understanding of these anomalies is an open problem. We report evidence that the many-body effects have their origin in one or more spontaneously localised states that emerge from Friedel oscillations in the QPC channel. Kondo physics will then also contribute to the formation of the many-body state with Kondo signatures that reflect the parity of the number of localised states. Evidence comes from experiments with length-tunable QPCs that show a periodic modulation of the many-body physics with Kondo signatures of alternating parity. Our results are of importance for assessing the role of QPCs in more complex hybrid devices and proposals for spintronic and quantum information applications. In addition, our results show that tunable QPCs offer a rich platform for investigating many-body effects in nanoscale systems, with the ability to probe such physics at the level of a single site.

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Deterministic entanglement of superconducting qubits by parity measurement and feedback

The stochastic evolution of quantum systems during measurement is arguably the most enigmatic feature of quantum mechanics. Measuring a quantum system typically steers it towards a classical state, destroying any initial quantum superposition and any entanglement with other quantum systems. Remarkably, the measurement of a shared property between non-interacting quantum systems can generate entanglement starting from an uncorrelated state. Of special interest in quantum computing is the parity measurement, which projects a register of quantum bits (qubits) to a state with an even or odd total number of excitations. Crucially, a parity meter must discern the two parities with high fidelity while preserving coherence between same-parity states. Despite numerous proposals for atomic, semiconducting, and superconducting qubits, realizing a parity meter creating entanglement for both even and odd measurement results has remained an outstanding challenge. We realize a time-resolved, continuous parity measurement of two superconducting qubits using the cavity in a 3D circuit quantum electrodynamics (cQED) architecture and phase-sensitive parametric amplification. Using postselection, we produce entanglement by parity measurement reaching 77% concurrence. Incorporating the parity meter in a feedback-control loop, we transform the entanglement generation from probabilistic to fully deterministic, achieving 66% fidelity to a target Bell state on demand. These realizations of a parity meter and a feedback-enabled deterministic measurement protocol provide key ingredients for active quantum error correction in the solid state.

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Femtosecond nonlinear ultrasonics in gold probed with ultrashort surface plasmons

Fundamental interactions induced by lattice vibrations on ultrafast time scales become increasingly important for modern nanoscience and technology. Experimental access to the physical properties of acoustic phonons in the THz frequency range and over the entire Brillouin zone is crucial for understanding electric and thermal transport in solids and their compounds. Here, we report on the generation and nonlinear propagation of giant (1 percent) acoustic strain pulses in hybrid gold/cobalt bilayer structures probed with ultrafast surface plasmon interferometry. This new technique allows for unambiguous characterization of arbitrary ultrafast acoustic transients. The giant acoustic pulses experience substantial nonlinear reshaping already after a propagation distance of 100 nm in a crystalline gold layer. Excellent agreement with the Korteveg-de Vries model points to future quantitative nonlinear femtosecond THz-ultrasonics at the nano-scale in metals at room temperature.

physics.optics↗

Electrical Control of Two-Dimensional Neutral and Charged Excitons in a Monolayer Semiconductor

Monolayer group VI transition metal dichalcogenides have recently emerged as semiconducting alternatives to graphene in which the true two-dimensionality (2D) is expected to illuminate new semiconducting physics. Here we investigate excitons and trions (their singly charged counterparts) which have thus far been challenging to generate and control in the ultimate 2D limit. Utilizing high quality monolayer molybdenum diselenide (MoSe2), we report the unambiguous observation and electrostatic tunability of charging effects in positively charged (X+), neutral (Xo), and negatively charged (X-) excitons in field effect transistors via photoluminescence. The trion charging energy is large (30 meV), enhanced by strong confinement and heavy effective masses, while the linewidth is narrow (5 meV) at temperatures below 55 K. This is greater spectral contrast than in any known quasi-2D system. We also find the charging energies for X+ and X- to be nearly identical implying the same effective mass for electrons and holes.

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All-optical polariton transistor

While optical technology provides the best solution for the transmission of information, optical logics still calls for qualitative new concepts to be explored. Exciton-polaritons are composite particles, resulting from the strong coupling between excitons and photons, which have recently demonstrated exceptional properties like huge non-linearities, long range coherence and suppression of scattering. Here we demonstrate a switching scheme for polaritons moving in the plane of a microcavity which satisfy all the requirements for an all-optical transistor. Under resonant excitation, the power threshold for the nonlinear increase of the polariton density is varied by a weak control beam, obtaining up to 19 times amplification with switching energies in the range of attojoule per square micron. Polariton propagation in the plane of the microcavity is then used to control the switching of a second, spatially separated transistor, opening the way to the implementation of polariton integrated circuits.

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Photocurrent in graphene harnessed by tunable intrinsic plasmons

Graphene's optical properties in the infrared and terahertz can be tailored and enhanced by patterning graphene into periodic metamaterials with sub-wavelength feature sizes. Here we demonstrate polarization sensitive and gate tunable photodetection in graphene nanoribbon arrays. The long-lived hybrid plasmon-phonon modes utilized are coupled excitations of electron density oscillations and substrate (SiO2) surface polar phonons. Their excitation by s-polarization leads to an in-resonance photocurrent an order of magnitude larger than the photocurrent observed for p-polarization, which excites electron-hole pairs. The plasmonic detectors exhibit photoinduced temperature increases up to four times as large as comparable 2D graphene detectors. Moreover, the photocurrent sign becomes polarization sensitive in the narrowest nanoribbon arrays due to differences in decay channels for photoexcited hybrid plasmon-phonons and electrons. Our work provides a path to light sensitive and frequency selective photodetectors based on graphene's plasmonic excitations.

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