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arXiv2013

Bandgap Engineering of Strained Monolayer and Bilayer MoS2

We report the influence of uniaxial tensile mechanical strain in the range 0-2.2% on the phonon spectra and bandstructures of monolayer and bilayer molybdenum disulfide (MoS2) two-dimensional crystals. First, we employ Raman spectroscopy to observe phonon softening with increased strain, breaking the degeneracy in the E' Raman mode of MoS2, and extract a Grüneisen parameter of ~1.06. Second, using photoluminescence spectroscopy we measure a decrease in the optical band gap of MoS2 that is roughly linear with strain, ~45 meV% strain for monolayer MoS2 and ~120 meV% strain for bilayer MoS2. Third, we observe a pronounced strain-induced decrease in the photoluminescence intensity of monolayer MoS2 that is indicative of the direct-to-indirect transition of the character of the optical band gap of this material at applied strain of ~1.5%, a value supported by first-principles calculations that include excitonic effects. These observations constitute the first demonstration of strain engineering the band structure in the emergent class of two-dimensional crystals, transition-metal dichalcogenides.

cond-mat.mes-hall↗

arXiv2013

Low Frequency Electronic Noise in Single-Layer MoS2 Transistors

Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between 0.005 and 2.0 in vacuum (< 10-5 Torr). The field-effect mobility decreased and the noise amplitude increased by an order of magnitude in ambient conditions, revealing the significant influence of atmospheric adsorbates on charge transport. In addition, single Lorentzian generation-recombination noise was observed to increase by an order of magnitude as the devices were cooled from 300 K to 6.5 K.

cond-mat.mes-hall↗

arXiv2013

Probing of optical near-fields by electron rescattering on the 1 nm scale

We present a new method of measuring optical near-fields within ~1 nm of a metal surface, based on rescattering of photoemitted electrons. With this method, we precisely measure the field enhancement factor for tungsten and gold nanotips as a function of tip radius. The agreement with Maxwell simulations is very good. Further simulations yield a field enhancement map for all materials, which shows that optical near-fields at nanotips are governed by a geometric effect under most conditions, while plasmon resonances play only a minor role. Last, we consider the implications of our results on quantum mechanical effects near the surface of nanostructures and discuss features of quantum plasmonics.

physics.optics↗

arXiv2014

High-quality multi-terminal suspended graphene devices

We introduce a new scheme to realize suspended, multi-terminal graphene structures that can be current annealed successfully to obtain uniform, very high quality devices. A key aspect is that the bulky metallic contacts are not connected directly to the part of graphene probed by transport measurements, but only through etched constriction, which prevents the contacts from acting invasively. The device high quality and uniformity is demonstrated by a reproducibly narrow (delta_n ~ 10^9 cm^-2) resistance peak around charge neutrality, by carrier mobility values exceeding 10^6 cm^2/V/s, by the observation of integer quantum Hall plateaus starting at 30 mT and of symmetry broken states at about 200 mT, and by the occurrence of a negative multi-terminal resistance directly proving the occurrence of ballistic transport. As these multi-terminal devices enable measurements that cannot be done in a simpler two-terminal configuration, we anticipate that their use in future studies of graphene-based systems will be particularly relevant.

cond-mat.mes-hall↗

arXiv2013

Local strain engineering in atomically thin MoS2

Tuning the electronic properties of a material by subjecting it to strain constitutes an important strategy to enhance the performance of semiconducting electronic devices. Using local strain, confinement potentials for excitons can be engineered, with exciting possibilities for trapping excitons for quantum optics and for efficient collection of solar energy. Two-dimensional materials are able to withstand large strains before rupture, offering a unique opportunity to introduce large local strains. Here, we study atomically thin MoS2 layers with large local strains of up to 2.5% induced by controlled delamination from a substrate. Using simultaneous scanning Raman and photoluminescence imaging, we spatially resolve a direct bandgap reduction of up to 90 meV induced by local strain. We observe a funnel effect in which excitons drift hundreds of nanometers to lower bandgap regions before recombining, demonstrating exciton confinement by local strain. The observations are supported by an atomistic tight-binding model developed to predict the effect of inhomogeneous strain on the local electronic states in MoS2. The possibility of generating large strain-induced variations in exciton trapping potentials opens the door for a variety of applications in atomically thin materials including photovoltaics, quantum optics and two-dimensional optoelectronic devices.

cond-mat.mes-hall↗

arXiv2013

Transient absorption and photocurrent microscopy show hot electron supercollisions describe the rate-limiting relaxation step in graphene

Using transient absorption (TA) microscopy as a hot electron thermometer we show disorder-assisted acoustic-phonon supercollisions (SCs) best describes the rate-limiting relaxation step in graphene over a wide range of lattice temperatures ($T_l=$5-300 K), Fermi energies ($E_F=\pm0.35$ eV), and optical probe energies (~0.3 - 1.1 eV). Comparison with simultaneously collected transient photocurrent, an independent hot electron thermometer, confirms the rate-limiting optical and electrical response in graphene are best described by the SC-heat dissipation rate model, $H=A(T^3_e- T^3_l)$. Our data further shows the electron cooling rate in substrate supported graphene is twice as fast as in suspended graphene sheets, consistent with SC-model prediction for disorder.

cond-mat.mtrl-sci↗

arXiv2013

Strong plasmon reflection at nanometer-size gaps in monolayer graphene on SiC

We employ tip-enhanced infrared near-field microscopy to study the plasmonic properties of epitaxial quasi-free-standing monolayer graphene on silicon carbide. The near-field images reveal propagating graphene plasmons, as well as a strong plasmon reflection at gaps in the graphene layer, which appear at the steps between the SiC terraces. When the step height is around 1.5 nm, which is two orders of magnitude smaller than the plasmon wavelength, the reflection signal reaches 20% of its value at graphene edges, and it approaches 50% for step heights as small as 5 nm. This intriguing observation is corroborated by numerical simulations, and explained by the accumulation of a line charge at the graphene termination. The associated electromagnetic fields at the graphene termination decay within a few nanometers, thus preventing efficient plasmon transmission across nanoscale gaps. Our work suggests that plasmon propagation in graphene-based circuits can be tailored using extremely compact nanostructures, such as ultra-narrow gaps. It also demonstrates that tip-enhanced near-field microscopy is a powerful contactless tool to examine nanoscale defects in graphene.

cond-mat.mes-hall↗

arXiv2014

Tuning the Fano Resonance with an Intruder Continuum

Through a combination of experiment and theory we establish the possibility of achieving strong tuning of Fano resonances (FRs), by allowing their usual two-path geometry to interfere with an additional, 'intruder', continuum. As the coupling strength to this intruder is varied, we predict strong modulations of the resonance line shape that, in principle at least, may exceed the amplitude of the original FR itself. For a proof-of-concept demonstration of this phenomenon, we construct a nanoscale interferometer from nonlocally coupled quantum point contacts and utilize the unique features of their density of states to realize the intruder. External control of the intruder coupling is enabled by means of an applied magnetic field, in the presence of which we demonstrate the predicted distortions of the FR. This general scheme for resonant control should be broadly applicable to a variety of wave-based systems, opening up the possibility of new applications in areas such as chemical and biological sensing and secure communications.

cond-mat.mes-hall↗

arXiv2014

Ultrafast and Nanoscale Plasmonic Phenomena in Exfoliated Graphene Revealed by Infrared Pump-Probe Nanoscopy

Pump-probe spectroscopy is central for exploring ultrafast dynamics of fundamental excitations, collective modes and energy transfer processes. Typically carried out using conventional diffraction-limited optics, pump-probe experiments inherently average over local chemical, compositional, and electronic inhomogeneities. Here we circumvent this deficiency and introduce pump-probe infrared spectroscopy with ~20 nm spatial resolution, far below the diffraction limit, which is accomplished using a scattering scanning near-field optical microscope (s-SNOM). This technique allows us to investigate exfoliated graphene single-layers on SiO2 at technologically significant mid-infrared (MIR) frequencies where the local optical conductivity becomes experimentally accessible through the excitation of surface plasmons via the s-SNOM tip. Optical pumping at near-infrared (NIR) frequencies prompts distinct changes in the plasmonic behavior on 200 femtosecond (fs) time scales. The origin of the pump-induced, enhanced plasmonic response is identified as an increase in the effective electron temperature up to several thousand Kelvin, as deduced directly from the Drude weight associated with the plasmonic resonances.

cond-mat.mes-hall↗

arXiv2013

Spectroscopic Properties of Nanotube-Chromophore Hybrids

Recently, individual single-walled carbon nanotubes (SWNTs) functionalized with azo-benzene chromophores were shown to form a new class of hybrid nanomaterials for optoelectronics applications. Here we use a number of experimental techniques and theory to understand the binding, orientation, and nature of coupling between chromophores and the nanotubes, all of which are of relevance to future optimization of these hybrid materials. We find that the binding energy between chromophores and nanotubes depends strongly on the type of tether that is used to bind the chromophores to the nanotubes, with pyrene tethers resulting in more than 90% of the bound chromophores during processing. DFT calculations show that the binding energy of the chromophores to the nanotubes is maximized for chromophores parallel to the nanotube sidewall, even with the use of tethers; second harmonic generation shows that there is nonetheless a partial radial orientation of the chromophores on the nanotubes. We find weak electronic coupling between the chromophores and the SWNTs, consistent with non-covalent binding. The chromophore-nanotube coupling, while weak, is sufficient to quench the chromophore fluorescence. Stern-Volmer plots are non-linear, which supports a combination of static and dynamic quenching processes. The chromophore orientation is an important variable for chromophore-nanotube phototransistors, and our experiments suggest the possibility for further optimizing this orientational degree of freedom.

cond-mat.mes-hall↗

arXiv2013

Chiral Pinwheel Heterojunctions Self Assembled from C60 and Pentacene

We demonstrate the self-assembly of C$_{60}$ and pentacene (Pn) molecules into acceptor-donor heterostructures which are well-ordered and -- despite the high degree of symmetry of the constituent molecules -- {\it chiral}. Pn was deposited on Cu(111) to monolayer coverage, producing the random-tiling ($R$) phase as previously described. Atop $R$-phase Pn, post-deposited C$_{60}$ molecules cause rearrangement of the Pn molecules into domains based on chiral supramolecular `pinwheels'. These two molecules are the highest-symmetry achiral molecules so far observed to coalesce into chiral heterostructures. Also, the chiral pinwheels (composed of 1 C$_{60}$ and 6 Pn each) may share Pn molecules in different ways to produce structures with different lattice parameters and degree of chirality. High-resolution scanning tunneling microscopy (STM) results and knowledge of adsorption sites allow the determination of these structures to a high degree of confidence. The measurement of chiral angles identical to those predicted is a further demonstration of the accuracy of the models. Van der Waals density functional theory calculations reveal that the Pn molecules around each C$_{60}$ are torsionally flexed around their long molecular axes and that there is charge transfer from C$_{60}$ to Pn in each pinwheel.

cond-mat.mes-hall↗

arXiv2013

Synthesis of Long-T1 Silicon Nanoparticles for Hyperpolarized 29Si Magnetic Resonance Imaging

We describe the synthesis, materials characterization and dynamic nuclear polarization (DNP) of amorphous and crystalline silicon nanoparticles for use as hyperpolarized magnetic resonance imaging (MRI) agents. The particles were synthesized by means of a metathesis reaction between sodium silicide (Na4Si4) and silicon tetrachloride (SiCl4) and were surface functionalized with a variety of passivating ligands. The synthesis scheme results in particles of diameter ~10 nm with long size-adjusted 29Si spin lattice relaxation (T1) times (> 600 s), which are retained after hyperpolarization by low temperature DNP.

cond-mat.mtrl-sci↗

arXiv2013

Scattering of Graphene plasmons by defects in the graphene sheet

A theoretical study is presented on the scattering of graphene surface plasmons by defects in the graphene sheet they propagate in. These defects can be either natural (as domain boundaries, ripples and cracks, among others) or induced by an external gate. The scattering is shown to be governed by an integral equation, derived from a plane wave expansion of the fields, which in general must be solved numerically but it provides useful analytical results for small defects. Two main cases are considered: smooth variations of the graphene conductivity (characterized by a Gaussian conductivity profile) and sharp variations (represented by islands with different conductivity). In general, reflection largely dominates over radiation out of the graphene sheet. However, in the case of sharply defined conductivity islands there are some values of island size and frequency where the reflectance vanishes and, correspondingly, the radiation out of plane is the main scattering process. For smooth defects, the reflectance spectra present a single maximum at the condition $k_p a \approx \sqrt{2}$, where $k_p$ is the GSP wavevector and $a$ the spatial width of the defect. In contrast, the reflectance spectra of sharp defects present periodic oscillations with period $k_p' a$, where $k_p'$ is the GSP wavelength inside the defect. Finally, the case of cracks (gaps in the graphene conductivity) is considered, showing that the reflectance is practically unity for gap widths larger than one tenth of the GSP wavelength.

cond-mat.mes-hall↗

arXiv2013

Calibrating and Controlling the Quantum Efficiency Distribution of Inhomogeneously Broadened Quantum Rods Using a Mirror Ball

We demonstrate that a simple silver coated ball lens can be used to accurately measure the entire distribution of radiative transition rates of quantum dot nanocrystals. This simple and cost-effective implementation of Drexhage's method that uses nanometer-controlled optical mode density variations near a mirror, not only allows to extract calibrated ensemble-averaged rates, but for the first time also to quantify the full inhomogeneous dispersion of radiative and non radiative decay rates across thousands of nanocrystals. We apply the technique to novel ultra-stable CdSe/CdS dot-in-rod emitters. The emitters are of large current interest due to their improved stability and reduced blinking. We retrieve a room-temperature ensemble average quantum efficiency of 0.87+-0.08 at a mean lifetime around 20 ns. We confirm a log-normal distribution of decay rates as often assumed in literature and we show that the rate distribution-width, that amounts to about 30% of the mean decay rate, is strongly dependent on the local density of optical states.

physics.optics↗

arXiv2013

Nitrogen-Doped Graphene Sheets Grown by Chemical Vapor Deposition: Synthesis and Influence of Nitrogen Impurities on Carrier Transport

A significant advance toward achieving practical applications of graphene as a two-dimensional material in nanoelectronics would be provided by successful synthesis of both n-type and p-type doped graphene. However reliable doping and a thorough understanding of carrier transport in the presence of charged impurities governed by ionized donors or acceptors in the graphene lattice are still lacking. Here we report experimental realization of few-layer nitrogen-doped (N-doped) graphene sheets by chemical vapor deposition of organic molecule 1, 3, 5-triazine on Cu metal catalyst. By reducing the growth temperature, the atomic percentage of nitrogen doping is raised from 2.1 % to 5.6 %. With increasing doping concentration, N-doped graphene sheet exhibits a crossover from p-type to n-type behavior accompanied by a strong enhancement of electron-hole transport asymmetry, manifesting the influence of incorporated nitrogen impurities. In addition, by analyzing the data of X-ray photoelectron spectroscopy, Raman spectroscopy, and electrical measurements, we show that pyridinic and pyrrolic N impurities play an important role in determining the transport behavior of carriers in N-doped graphene sheets.

cond-mat.mes-hall↗

arXiv2013

Magneto-Transport in MoS2: Phase Coherence, Spin Orbit Scattering and the Hall Factor

We have characterized phase coherence length, spin orbit scattering length, and the Hall factor in n-type MoS2 2D crystals via weak localization measurements and Hall-effect measurements. Weak localization measurements reveal a phase coherence length of ~50 nm at T = 400 mK for a few-layer MoS2 film, decreasing as T^-1/2 with increased temperatures. Weak localization measurements also allow us, for the first time without optical techniques, to estimate the spin orbit scattering length to be 430 nm, pointing to the potential of MoS2 for spintronics applications. Via Hall-effect measurements, we observe a low temperature Hall mobility of 311 cm2/Vs at T = 1 K which decreases as a power law with a characteristic exponent γ=1.5 from 10 K to 60 K. At room temperature, we observe Hall mobility of 24 cm2/Vs. By determining the Hall factor for MoS2 to be 1.35 at T = 1 K and 2.4 at room temperature, we observe drift mobility of 420 cm2/Vs and 56 cm2/Vs at T = 1 K and room temperature, respectively.

cond-mat.mes-hall↗

arXiv2013

Charge Trapping Dynamics in PbS Colloidal Quantum Dot Photovoltaic Devices

The efficiency of solution-processed colloidal quantum dot (QD) based solar cells is limited by poor charge transport in the active layer of the device, which originates from multiple trapping sites provided by QD surface defects. We apply a recently developed ultrafast electro-optical technique, pump-push photocurrent spectroscopy, to elucidate the charge trapping dynamics in PbS colloidal-QD photovoltaic devices at working conditions. We show that IR photo-induced absorption of QD in the 0.2-0.5 eV region is partly associated with immobile charges, which can be optically de-trapped in our experiment. Using this absorption as a probe, we observe that the early trapping dynamics strongly depend on the nature of the ligands used for QD passivation while it depends only slightly on the nature of the electron-accepting layer. We find that weakly bound states, with a photon-activation energy of 0.2 eV, are populated instantaneously upon photoexcitation. This indicates that the photogenerated states show an intrinsically bound-state character, arguably similar to charge-transfer states formation in organic photovoltaic materials. Sequential population of deeper traps (activation energy 0.3-0.5 eV) is observed on the ~0.1-10 ns time scales, indicating that most of carrier trapping occurs only after substantial charge relaxation/transport. The reported study disentangles fundamentally different contributions to charge trapping dynamics in the nanocrystal-based optoelectronic devices and can serve as a useful tool for QD solar cell development.

cond-mat.mes-hall↗

arXiv2013

Carbyne from first principles: Chain of C atoms, a nanorod or a nanorope?

We report an extensive study of the properties of carbyne using first-principles calculations. We investigate carbyne's mechanical response to tension, bending, and torsion deformations. Under tension, carbyne is about twice as stiff as the stiffest known materials and has an unrivaled specific strength of up to 7.5*10^7 Nm/kg, requiring a force of ~10 nN to break a single atomic chain. Carbyne has a fairly large room-temperature persistence length of about 14 nm. Surprisingly, the torsional stiffness of carbyne can be zero but can be 'switched on' by appropriate functional groups at the ends. Further, under appropriate termination, carbyne can be switched into a magnetic-semiconductor state by mechanical twisting. We reconstruct the equivalent continuum-elasticity representation, providing the full set of elastic moduli for carbyne, showing its extreme mechanical performance (e.g. a nominal Young's modulus of 32.7 TPa with an effective mechanical thickness of 0.772 A). We also find an interesting coupling between strain and band gap of carbyne, which is strongly increased under tension, from 3.2 to 4.4 eV under a 10% strain. Finally, we study the performance of carbyne as a nanoscale electrical cable, and estimate its chemical stability against self-aggregation, finding an activation barrier of 0.6 eV for the carbyne-carbyne cross-linking reaction and an equilibrium cross-link density for two parallel carbyne chains of 1 cross-link per 17 C atoms (2.2 nm).

cond-mat.mtrl-sci↗