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Tau-Function Theory of Quantum Chaotic Transport with beta=1,2,4

We study the cumulants and their generating functions of the probability distributions of the conductance, shot noise and Wigner delay time in ballistic quantum dots. Our approach is based on the integrable theory of certain matrix integrals and applies to all the symmetry classes beta=1,2,4 of Random Matrix Theory. We compute the weak localization corrections to the mixed cumulants of the conductance and shot noise for beta=1,4, thus proving a number of conjectures of Khoruzhenko et al. (Phys. Rev. B, Vol. 80 (2009), 125301). We derive differential equations that characterize the cumulant generating functions for all beta=1,2,4. Furthermore, we show that the cumulant generating function of the Wigner delay time can be expressed in terms of the Painleve' III' transcendant. This allows us to study properties of the cumulants of the Wigner delay time in the asymptotic limit n -> infinity. Finally, for all the symmetry classes and for any number of open channels, we derive a set of recurrence relations that are very efficient for computing cumulants at all orders.

math-ph↗

Competing topological phases in few-layer graphene

We investigate the effect of spin-orbit coupling on the band structure of graphene-based two-dimensional Dirac fermion gases in the quantum Hall regime. Taking monolayer graphene as our first candidate, we show that a quantum phase transition between two distinct topological states -- the quantum Hall and the quantum spin Hall phases -- can be driven by simply tuning the Fermi level with a gate voltage. This transition is characterized by the existence of a chiral spin-polarized edge state propagating along the interface separating the two topological phases. We then apply our analysis to the more difficult case of bilayer graphene. Unlike in monolayer graphene, spin-orbit coupling by itself has indeed been predicted to be unsuccessful in driving bilayer graphene into a topological phase, due to the existence of an even number of pairs of spin-polarized edge states. While we show that this remains the case in the quantum Hall regime, we point out that by additionally breaking the layer inversion symmetry, a non-trivial quantum spin Hall phase can re-emerge in bilayer graphene at low energy. We consider two different symmetry-breaking mechanisms: inducing spin-orbit coupling only in the upper layer, and applying a perpendicular electric field. In both cases, the presence at low energy of an odd number of pairs of edge states can be driven by an exchange field. The related situation in trilayer graphene is also discussed.

cond-mat.mes-hall↗

The recursive Green's function method for graphene

We describe how to apply the recursive Green's function method to the computation of electronic transport properties of graphene sheets and nanoribbons in the linear response regime. This method allows for an amenable inclusion of several disorder mechanisms at the microscopic level, as well as inhomogeneous gating, finite temperature, and, to some extend, dephasing. We present algorithms for computing the conductance, density of states, and current densities for armchair and zigzag atomic edge alignments. Several numerical results are presented to illustrate the usefulness of the method.

cond-mat.mes-hall↗

Higher harmonics and ac transport from time dependent density functional theory

We report on dynamical quantum transport simulations for realistic molecular devices based on an approximate formulation of time-dependent Density Functional Theory with open boundary conditions. The method allows for the computation of various properties of junctions that are driven by alternating bias voltages. Besides the ac conductance for hexene connected to gold leads via thiol anchoring groups, we also investigate higher harmonics in the current for a benzenedithiol device. Comparison to a classical quasi-static model reveals that quantum effects may become important already for small ac bias and that the full dynamical simulations exhibit a much lower number of higher harmonics. Current rectification is also briefly discussed.

cond-mat.mes-hall↗

Efficient and realistic device modeling from atomic detail to the nanoscale

As semiconductor devices scale to new dimensions, the materials and designs become more dependent on atomic details. NEMO5 is a nanoelectronics modeling package designed for comprehending the critical multi-scale, multi-physics phenomena through efficient computational approaches and quantitatively modeling new generations of nanoelectronic devices as well as predicting novel device architectures and phenomena. This article seeks to provide updates on the current status of the tool and new functionality, including advances in quantum transport simulations and with materials such as metals, topological insulators, and piezoelectrics.

cond-mat.mes-hall↗

Microfluidic and Nanofluidic Cavities for Quantum Fluids Experiments

The union of quantum fluids research with nanoscience is rich with opportunities for new physics. The relevant length scales in quantum fluids, 3He in particular, are comparable to those possible using microfluidic and nanofluidic devices. In this article, we will briefly review how the physics of quantum fluids depends strongly on confinement on the microscale and nanoscale. Then we present devices fabricated specifically for quantum fluids research, with cavity sizes ranging from 30 nm to 11 microns deep, and the characterization of these devices for low temperature quantum fluids experiments.

cond-mat.mes-hall↗

Number-resolved master equation approach to quantum transport under the self-consistent Born approximation

We construct a particle-number(n)-resolved master equation (ME) approach under the self-consistent Born approximation (SCBA) for quantum transport through mesoscopic systems. The formulation is essentially non-Markovian and incorporates the interlay of the multi-tunneling processes and many-body correlations. The proposed n-SCBA-ME goes completely beyond the scope of the Born-Markov master equation, being applicable to transport under small bias voltage, in non-Markovian regime and with strong Coulomb correlations. For steady state, it can recover not only the exact result of noninteracting transport under arbitrary voltages, but also the challenging nonequilibrium Kondo effect. Moreover, the n-SCBA-ME approach is efficient for the study of shot noise.We demonstrate the application by a couple of representative examples, including particularly the nonequilibrium Kondo system.

cond-mat.mes-hall↗

Broadening of plasmonic resonance due to electron collisions with nanoparticle boundary: quantum-mechanical consideration

We present a quantum mechanical approach to calculate broadening of plasmonic resonances in metallic nanostructures due to collisions of electrons with the surface of the structure. The approach is applicable if the characteristic size of the structure is much larger than the de Broglie electron wavelength in the metal. The approach can be used in studies of plasmonic properties of both single nanoparticles and arrays of nanoparticles.

physics.optics↗

Inertial effect on spin orbit coupling and spin transport

We theoretically study the renormalization of inertial effects on the spin dependent transport of conduction electrons in a semiconductor by taking into account the interband mixing on the basis of k.p perturbation theory. In our analysis, for the generation of spin current we have used the extended Drude model where the spin orbit coupling plays an important role. We predict enhancement of the spin current resulting from the rerormalized spin orbit coupling effective in our model in cubic and non cubic crystal. Attention has been paid to clarify the importance of gauge fields in the spin transport of this inertial system. A theoretical proposition of a perfect spin filter has been done through the Aharanov Casher like phase corresponding to this inertial system. For a time dependent acceleration, effect of $\vec{k} . \vec{p}$ perturbation on the spin current and spin polarization has also been addressed. Furthermore, achievement of a tunable source of polarized spin current through the non uniformity of the inertial spin orbit coupling strength has also been discussed.

cond-mat.mes-hall↗

Unruh effect in vacua with anisotropic scaling: Applications to multilayer graphene

We extend the calculation of the Unruh effect to the universality classes of quantum vacua obeying topologically protected invariance under anisotropic scaling ${\bf r} \rightarrow b {\bf r}$, $t \rightarrow b^z t$. Two situations are considered. The first one is related to the accelerated detector which detects the electron - hole pairs. The second one is related to the system in external electric field, when the electron - hole pairs are created due to the Schwinger process. As distinct from the Unruh effect in relativistic systems (where $z=1$) the calculated radiation is not thermal, but has properties of systems in the vicinity of quantum criticality. The vacuum obeying anisotropic scaling can be realized, in particular, in multilayer graphene with the rhombohedral stacking. Opportunities of the experimental realization of Unruh effect in this situation are discussed.

cond-mat.mes-hall↗

On solvability and integrability of the Rabi model

Quasi-exactly solvable Rabi model is investigated within the framework of the Bargmann Hilbert space of analytic functions ${\cal B}$. On applying the theory of orthogonal polynomials, the eigenvalue equation and eigenfunctions are shown to be determined in terms of three systems of monic orthogonal polynomials. The formal Schweber quantization criterion for an energy variable $x$, originally expressed in terms of infinite continued fractions, can be recast in terms of a meromorphic function $F(z) = a_0 + \sum_{k=1}^\infty {\cal M}_k/(z-ξ_k)$ in the complex plane $\mathbb{C}$ with {\em real simple} poles $ξ_k$ and {\em positive} residues ${\cal M}_k$. The zeros of $F(x)$ on the real axis determine the spectrum of the Rabi model. One obtains at once that, on the real axis, (i) $F(x)$ monotonically decreases from $+\infty$ to $-\infty$ between any two of its subsequent poles $ξ_k$ and $ξ_{k+1}$, (ii) there is exactly one zero of $F(x)$ for $x\in (ξ_k,ξ_{k+1})$, and (iii) the spectrum corresponding to the zeros of $F(x)$ does not have any accumulation point. Additionally, one can provide much simpler proof of that the spectrum in each parity eigenspace ${\cal B}_\pm$ is necessarily {\em nondegenerate}. Thereby the calculation of spectra is greatly facilitated. Our results allow us to critically examine recent claims regarding solvability and integrability of the Rabi model.

quant-ph↗

Fluctuation-induced noise in out-of-equilibrium disordered superconducting films

We study out-of-equilibrium transport in disordered superconductors close to the superconducting transition. We consider a thin film connected by resistive tunnel interfaces to thermal reservoirs having different chemical potentials and temperatures. The nonequilibrium longitudinal current-current correlation function is calculated within the nonlinear sigma model description and nonlinear dependence on temperatures and chemical potentials is obtained. Different contributions are calculated, originating from the fluctuation-induced suppression of the quasiparticle density of states, Maki- Thompson and Aslamazov-Larkin processes. As a special case of our results, close-to-equilibrium we obtain the longitudinal ac conductivity using the fluctuation-dissipation theorem.

cond-mat.supr-con↗

A hidden analytic structure of the Rabi model

The Rabi model describes the simplest interaction between a cavity mode with a frequency $ω_c$ and a two-level system with a resonance frequency $ω_0$. It is shown here that the spectrum of the Rabi model coincides with the support of the discrete Stieltjes integral measure in the orthogonality relations of recently introduced orthogonal polynomials. The exactly solvable limit of the Rabi model corresponding to $Δ=ω_0/(2ω_c)=0$, which describes a displaced harmonic oscillator, is characterized by the discrete Charlier polynomials in normalized energy $\upepsilon$, which are orthogonal on an equidistant lattice. A non-zero value of $Δ$ leads to non-classical discrete orthogonal polynomials $ϕ_{k}(\upepsilon)$ and induces a deformation of the underlying equidistant lattice. The results provide a basis for a novel analytic method of solving the Rabi model. The number of ca. {\em 1350} calculable energy levels per parity subspace obtained in double precision (cca 16 digits) by an elementary stepping algorithm is up to two orders of magnitude higher than is possible to obtain by Braak's solution. Any first $n$ eigenvalues of the Rabi model arranged in increasing order can be determined as zeros of $ϕ_{N}(\upepsilon)$ of at least the degree $N=n+n_t$. The value of $n_t>0$, which is slowly increasing with $n$, depends on the required precision. For instance, $n_t\simeq 26$ for $n=1000$ and dimensionless interaction constant $κ=0.2$, if double precision is required. Although we can rigorously prove our results only for dimensionless interaction constant $κ< 1$, numerics and exactly solvable example suggest that the main conclusions remain to be valid also for $κ\ge 1$.

quant-ph↗

Emergent Horava gravity in graphene

First of all, we reconsider the tight - binding model of monolayer graphene, in which the variations of the hopping parameters are allowed. We demonstrate that the emergent 2D Weitzenbock geometry as well as the emergent U(1) gauge field appear. The emergent gauge field is equal to the linear combination of the components of the zweibein. Therefore, we actually deal with the gauge fixed version of the emergent 2+1 D teleparallel gravity. In particular, we work out the case, when the variations of the hopping parameters are due to the elastic deformations, and relate the elastic deformations with the emergent zweibein. Next, we investigate the tight - binding model with the varying intralayer hopping parameters for the multilayer graphene with the ABC stacking. In this case the emergent 2D Weitzenbock geometry and the emergent U(1) gauge field appear as well, the emergent low energy effective field theory has the anisotropic scaling.

cond-mat.mes-hall↗

Huge field-effect surface charge injection and conductance modulation in metallic thin films by electrochemical gating

The field-effect technique, popular thanks to its application in common field-effect transistors, is here applied to metallic thin films by using as a dielectric a novel polymer electrolyte solution. The maximum injected surface charge, determined by a suitable modification of a classic method of electrochemistry called double-step chronocoulometry, reached some units in 10^15 charges/cm^2. At room temperature, relative variations of resistance up to 8%, 1.9% and 1.6% were observed in the case of gold, silver and copper, respectively and, if the films are thick enough (> 25 nm), results can be nicely explained within a free-electron model with parallel resistive channels. The huge charge injections achieved make this particular field-effect technique very promising for a vast variety of materials such as unconventional superconductors, graphene and 2D-like materials.

cond-mat.mes-hall↗

Effect of the disorder in graphene grain boundaries: A wave packet dynamics study

Chemical vapor deposition (CVD) on Cu foil is one of the most promising methods to produce graphene samples despite of introducing numerous grain boundaries into the perfect graphene lattice. A rich variety of GB structures can be realized experimentally by controlling the parameters in the CVD method. Grain boundaries contain non-hexagonal carbon rings (4,5,7,8 membered rings) and vacancies in various ratios and arrangements. Using wave packet dynamic (WPD) simulations and tight-binding electronic structure calculations, we have studied the effect of the structure of GBs on the transport properties. Three model GBs with increasing disorder were created in the computer: a periodic 5-7 GB, a "serpentine" GB, and a disordered GB containing 4,8 membered rings and vacancies. It was found that for small energies (E=EF+-1eV) the transmission decreases with increasing disorder. Four membered rings and vacancies are identified as the principal scattering centres. Revealing the connection between the properties of GBs and the CVD growth method may open new opportunities in the graphene based nanoelectronics.

cond-mat.mes-hall↗

Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene

On the SiC(0001) surface (the silicon face of SiC), epitaxial graphene is obtained by sublimation of Si from the substrate. The graphene film is separated from the bulk by a carbon-rich interface layer (hereafter called the buffer layer) which in part covalently binds to the substrate. Its structural and electronic properties are currently under debate. In the present work we report scanning tunneling microscopy (STM) studies of the buffer layer and of quasi-free-standing monolayer graphene (QFMLG) that is obtained by decoupling the buffer layer from the SiC(0001) substrate by means of hydrogen intercalation. Atomic resolution STM images of the buffer layer reveal that, within the periodic structural corrugation of this interfacial layer, the arrangement of atoms is topologically identical to that of graphene. After hydrogen intercalation, we show that the resulting QFMLG is relieved from the periodic corrugation and presents no detectable defect sites.

cond-mat.mes-hall↗

Electronic states of disordered grain boundaries in graphene prepared by chemical vapor deposition

Perturbations of the two dimensional carbon lattice of graphene, such as grain boundaries, have significant influence on the charge transport and mechanical properties of this material. Scanning tunneling microscopy measurements presented here show that localized states near the Dirac point dominate the local density of states of grain boundaries in graphene grown by chemical vapor deposition. Such low energy states are not reproduced by theoretical models which treat the grain boundaries as periodic dislocation-cores composed of pentagonal-heptagonal carbon rings. Using ab initio calculations, we have extended this model to include disorder, by introducing vacancies into a grain boundary consisting of periodic dislocation-cores. Within the framework of this model we were able to reproduce the measured density of states features. We present evidence that grain boundaries in graphene grown on copper incorporate a significant amount of disorder in the form of two-coordinated carbon atoms.

cond-mat.mes-hall↗