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arXiv1999

Weak localization in the 2D metallic regime of Si-MOS

The negative magnetoresistance due to weak localization is investigated in the two-dimensional metallic state of Si-MOS structures for high conductance values between 35 and 120 e^2/h. The extracted phase coherence time is equal to the momentum relaxation time at 10 K but nearly 100 times longer at the lowest temperature. Nevertheless, only weak logarithmic corrections to the conductivity are present in the investigated temperature and concentration range thus proving the absence of strong quantum effects due to electron-electron interaction. From saturation effects of the phase coherence time a lower boundary for spin-orbit scattering of about 200 ps is estimated.

cond-mat.mes-hall↗

arXiv2013

Organometallic Hexahapto Functionalization of Single Layer Graphene as a Route to High Mobility Graphene Devices

Organometallic hexahapto chromium metal complexation of single layer graphene, which involves constructive rehybridization of the graphene pi-system with the vacant chromium d orbital, leads to field effect devices which retain a high degree of the mobility with enhanced on-off ratio. This hexahapto mode of bonding between metal and graphene is quite distinct from the modification in electronic structure induced by conventional covalent sigma-bond formation with creation of sp3 carbon centers in graphene lattice and this chemistry is reversible.

cond-mat.mes-hall↗

arXiv2013

Tuning Optical Conductivity of Large-Scale CVD Graphene by Strain Engineering

Strain engineering has been recently recognized as an effective way to tailor the electrical properties of graphene. In the optical domain, effects such as strain-induced anisotropic absorption add an appealing functionality to graphene, opening the prospect for atomically thin optical elements. Indeed, graphene is currently one of the notable players in the intense drive towards bendable, thin, and portable electronic displays, where its intrinsically metallic, optically transparent, and mechanically robust nature are major advantages. Given that the intrinsic transparency of a graphene monolayer is 97.7 %, any small, reproducible, controllable, and potentially reversible modulation of transparency can have a significant impact for graphene as a viable transparent conducting electrode. Even more so, if the degree of modulation is polarization dependent. Here we show that the transparency in the visible range of graphene pre-strained on a Polyethylene terephthalate (PET) substrate exhibits a periodic modulation (0.1 %) as a function of polarization direction, which we interpret as strain-induced optical anisotropy. The degree of anisotropy is varied by reversible external manipulation of the level of pre-strain. The magnitude of strain is monitored independently by optical absorption and Raman spectroscopy, and the experimental observations are consistent with the theoretically expected modification of the optical conductivity of graphene arising from the strain-induced changes in the electronic dispersion of graphene. The strain sensitivity of the optical response of graphene demonstrated in this study can be potentially utilized towards novel ultra-thin optical devices and strain sensing applications.

cond-mat.mes-hall↗

arXiv2018

Bridging magnonics and spin-orbitronics

The emerging field of nano-magnonics utilizes high-frequency waves of magnetization - the spin waves - for the transmission and processing of information on the nanoscale. The advent of spin-transfer torque has spurred significant advances in nano-magnonics, by enabling highly efficient local spin-wave generation in magnonic nanodevices. Furthermore, the recent emergence of spin-orbitronics, which utilizes spin-orbit interaction as the source of spin torque, has provided a unique ability to exert spin torque over spatially extended areas of magnonic structures, enabling enhanced spin-wave transmission. Here, we experimentally demonstrate that these advances can be efficiently combined. We utilize the same spin-orbit torque mechanism for the generation of propagating spin waves, and for the long-range enhancement of their propagation, in a single integrated nano-magnonic device. The demonstrated system exhibits a controllable directional asymmetry of spin wave emission, which is highly beneficial for applications in non-reciprocal magnonic logic and neuromorphic computing.

cond-mat.mes-hall↗

arXiv2024

Maximizing the electromagnetic efficiency of spintronic terahertz emitters

Spintronic Terahertz Emitters (STE) represent a significant advancement in source technology, exploiting the ultrafast demagnetization process of spin-electrons to unveil a 30THz wide, gapless spectrum, accessible through femtosecond lasers across the full VIS-IR range. This innovation not only positions STEs as a pivotal advancement in THz source technology but also underscores their role as a cost-effective, high-performance solution, thereby redefining standards within the field. However, the inherent spintronic nature of these devices introduces a challenge: a lower optical-to-terahertz conversion efficiency, which positions them at a notable disadvantage relative to other sources. In response, this work aims to substantially improve the electromagnetic efficiency of these emitters. This is accomplished by maximizing the energy conversion from the pumping laser for spin-electron generation. Our design integrates STEs with an optimized 1D trapping cavity, specifically engineered to fulfill critical aspects of ultrafast excitation and THz extraction. As a result, we have realized a 245% enhancement in emission and an increase of 8dB in overall intensity, positions our results among the most substantial improvements documented in this field. Furthermore, we delineate the optimal geometry for the deployment of STEs and explore the strategic selection of substrates in depth. Such enhanced emitters advance spintronic emitters towards broader applications in time-domain spectroscopy, ellipsometry, and nonlinear THz-pump spectroscopy. Enhancing spintronic emitter efficiency, combined with rapid magnetic field modulation, indicates the potential for dynamic ranges that rival traditional sources. Our predictions of STE's efficiencies, made through an electromagnetic approach, highlight its capability to uncover overlooked aspects from an optical standpoint, leading to subsequent improvements.

physics.optics↗

arXiv2018

Silicon Oxide Electron-Emitting Nanodiodes

Electrically driven on-chip electron sources that do not need to be heated have been long pursued because the current thermionic electron sources show the problems of high power consumption, slow temporal response, bulky size, etc., but their realization remains challenging. Here we show that a nanogap formed by two electrodes on a silicon oxide substrate functions as an electron-emitting nanodiode after the silicon oxide in the nanogap is electrically switched to a high-resistance conducting state. A nanodiode based on graphene electrodes can be turned on by a voltage of ~7 V in ~100 ns and show an emission current of up to several microamperes, corresponding to an emission density of ~10^6 A cm^-2 and emission efficiency as high as 16.6%. We attribute the electron emission to be generated from a metal-insulator-metal tunneling diode on the substrate surface formed by the rupture of conducting filaments in silicon oxide. An array of 100 nanodiodes exhibits a global emission density of 5 A cm^-2 and stable emission with negligible current degradation over tens of hours under modest vacuum. The combined advantages of a low operating voltage, fast temporal response, high emission density and efficiency, convenient fabrication and integration, and stable emission in modest vacuum make silicon oxide electron-emitting nanodiodes a promising on-chip alternative to thermionic emission sources.

physics.app-ph↗

arXiv2017

Geometric Potential Resulting from Dirac Quantization

A fundamental problem regarding the Dirac quantization of a free particle on an $N-1$ curved hypersurface embedded in $N$($\geq 2$) flat space is the impossibility to give the same form of the curvature-induced quantum potential, the geometric potential as commonly called, as that given by the Schrödinger equation method where the particle moves in a region confined by a thin-layer sandwiching the surface. We resolve this problem by means of previously proposed scheme that hypothesizes a simultaneous quantization of positions, momenta, and Hamiltonian, among which the operator-ordering-free section is identified and is then found sufficient to lead to the expected form of geometric potential.

hep-th↗

arXiv2012

Stepwise introduction of model complexity in a generalized master equation approach to time-dependent transport

We demonstrate that with a stepwise introduction of complexity to a model of an electron system embedded in a photonic cavity and a carefully controlled stepwise truncation of the ensuing many-body space it is possible to describe the time-dependent transport of electrons through the system with a non-Markovian generalized quantum master equation. We show how this approach retains effects of an external magnetic field and the geometry of an anisotropic electronic system. The Coulomb interaction between the electrons and the full electromagnetic coupling between the electrons and the photons are treated in a non-perturbative way using "exact numerical diagonalization".

cond-mat.mes-hall↗

arXiv2014

Stability and electronic structure of covalently functionalized graphene layers

We present exemplary results of extensive studies of mechanical, electronic and transport properties of covalent functionalization of graphene monolayers (GML) with -NH2. We report new results of ab initio studies of covalent functionalization of GML with -NH2 groups up to 12.5% concentration. Our studies are performed in the framework of the density functional theory (DFT) and non-equilibrium Green's function (NEGF). We discuss the stability (adsorption energy), elastic moduli, electronic structure, band gaps, and effective electron masses as a function of the density of the adsorbed molecules. We also show the conductance and I(V) characteristic of these systems. Generally, the stability of the functionalized graphene layers decreases with the growing concentration of attachments and we determine the critical density of the molecules that can be chemisorbed on the surface of GLs. Because of local deformations of GLs and sp3 rehybridization of the bonds induced by fragments, elastic moduli decrease with increasing number of groups. Simultaneously, we observe that the functionalizing molecules stretch the graphenes lattice, the effect being more pronounced for higher concentration of adsorbed molecules. We find out that the GLs functionalization leads in many cases to the opening of the graphene band gap (up to 0.5302 eV for 12.5% concentration) and can be therefore utilized in graphene devices. The new HOMO and LUMO originate mostly from the impurity bands induced by the functionalization and they exhibit parabolic dispersion with electron effective masses comparable to ones in silicon or gallium nitride.

cond-mat.mtrl-sci↗

arXiv2013

Vibrationally coupled electron transport in single-molecule junctions: The importance of electron-hole pair creation processes

Vibrationally coupled electron transport through single-molecule junctions is considered. Reviewing our recent theoretical work, we show that electron-hole pair creation processes represent the key to understand the vibrational excitation characteristic of a single-molecule contact. Moreover, these processes can lead to a number of interesting transport phenomena such as, for example, negative differential resistance, rectification, mode-selective vibrational excitation and a pronounced temperature dependence of the electrical current. Thus, electron-hole pair creation processes are crucial to elucidate the basic mechanisms of vibrationally coupled electron transport through a single-molecule contact, despite the fact that these processes do not directly contribute to the electrical current that is flowing through the junction.

cond-mat.mes-hall↗

arXiv2013

Influence of vibrations on electron transport through nanoscale contacts

In this article we present a novel semi-analytical approach to calculate first-order electron-vibration coupling constants within the framework of density functional theory. It combines analytical expressions for the first-order derivative of the Kohn-Sham operator with respect to nuclear displacements with coupled-perturbed Kohn-Sham theory to determine the derivative of the electronic density matrix. This allows us to efficiently compute accurate electron-vibration coupling constants. We apply our approach to describe inelastic electron tunneling spectra of metallic and molecular junctions. A gold junction bridged by an atomic chain is used to validate the developed method, reproducing established experimental and theoretical results. For octane-dithiol and octane-diamine single-molecule junctions we discuss the influence of the anchoring group and mechanical stretching on the inelastic electron tunneling spectra.

cond-mat.mes-hall↗

arXiv2013

Adiabatic rapid passage in quantum dots: phonon-assisted decoherence and biexciton generation

We study the evolution of a quantum dot controlled by a frequency-swept (chirped), linearly polarized laser pulse in the presence of carrier-phonon coupling. The final occupation of the exciton state is limited both due to phonon-induced transitions between the adiabatic spectral branches and because of phonon-assisted transitions to the biexciton state. When the biexciton shift is large enough, the quantum dot can be modeled as a two-level system, which corresponds to excitation with circularly polarized light. For this case, we compare different methods of simulations: (i) a time convolutionless method, (ii) correlation expansion and (iii) path integrals. We show that results obtained from these methods agree perfectly at low temperatures.

cond-mat.mes-hall↗

arXiv2012

Floquet topological insulators

Topological insulators represent unique phases of matter with insulating bulk and conducting edge or surface states, immune to small perturbations such as backscattering due to disorder. This stems from their peculiar band structure, which provides topological protections. While conventional tools (pressure, doping etc.) to modify the band structure are available, time periodic perturbations can provide tunability by adding time as an extra dimension enhanced to the problem. In this short review, we outline the recent research on topological insulators in non equilibrium situations. Firstly, we introduce briefly the Floquet formalism that allows to describe steady states of the electronic system with an effective time-independent Hamiltonian. Secondly, we summarize recent theoretical work on how light irradiation drives semi-metallic graphene or a trivial semiconducting system into a topological phase. Finally, we show how photons can be used to probe topological edge or surface states.

cond-mat.mes-hall↗

arXiv2013

Spin textures of strongly correlated spin Hall quantum dots

We study the spin ordering of a quantum dot defined via magnetic barriers in an interacting quantum spin Hall edge. The spin-resolved density-density correlation functions are computed. We show that strong electron interactions induce a ground state with a highly correlated spin pattern. The crossover from the liquid-type correlations at weak interactions to the ground state spin texture found at strong interactions parallels the formation of a one-dimensional Wigner molecule in an ordinary strongly interacting quantum dot.

cond-mat.mes-hall↗

arXiv2018

Theory for strained graphene beyond the Cauchy-Born rule

The low-energy electronic properties of strained graphene are usually obtained by transforming the bond vectors according to the Cauchy-Born rule. In this work, we derive a new effective Dirac Hamiltonian by assuming a more general transformation rule for the bond vectors under uniform strain, which takes into account the strain-induced relative displacement between the two sublattices of graphene. Our analytical results show that the consideration of such relative displacement yields a qualitatively different Fermi velocity with respect to previous reports. Furthermore, from the derived Hamiltonian, we analyze effects of this relative displacement on the local density of states and the optical conductivity, as well as the implications on the scanning tunneling spectroscopy, including external magnetic field, and optical transmittance experiments of strained graphene.

cond-mat.mes-hall↗

arXiv2021

Tailoring Drug Mobility by Photothermal Heating of Graphene Plasmons

We propose a theoretical approach to quantitatively determine the photothermally driven enhancement of molecular mobility of graphene-indomethacin mixtures under infrared laser irradiation. Graphene plasmons absorb incident electromagnetic energy and dissipate them into heat. The absorbed energy depends on optical properties of graphene plasmons, which are sensitive to structural parameters, and concentration of plasmonic nanostructures. By using theoretical model, we calculate temperature gradients of the bulk drug with different concentrations of graphene plasmons. From these, we determine the temperature dependence of structural molecular relaxation and diffusion of indomethacin and find how the heating process significantly enhances the drug mobility.

cond-mat.mes-hall↗

arXiv2013

Self-Assembly of Semiconducting Single-Walled Carbon Nanotubes into Dense, Aligned Rafts

Single-walled carbon nanotubes are promising nanoelectronic materials but face long-standing challenges including production of pure semiconducting SWNTs and integration into ordered structures. Here, highly pure semiconducting single-walled carbon nanotubes are separated from bulk materials and self-assembled into densely aligned rafts driven by depletion attraction forces. Microscopy and spectroscopy revealed a high degree of alignment and a high packing density of ~100 tubes/micron within SWNT rafts. Field-effect transistors made from aligned SWNT rafts afforded short channel (~150 nm long) devices comprised of tens of purely semiconducting SWNTs derived from chemical separation within a < 1 micron channel width, achieving unprecedented high on-currents (up to ~120 microamperes per device) with high on/off ratios. The average on-current was ~ 3-4 microamperes per tube. The results demonstrated densely aligned high quality semiconducting SWNTs for integration into high performance nanoelectronics.

physics.chem-ph↗

arXiv2012

Bloch bundles, Marzari-Vanderbilt functional and maximally localized Wannier functions

We consider a periodic Schroedinger operator and the composite Wannier functions corresponding to a relevant family of its Bloch bands, separated by a gap from the rest of the spectrum. We study the associated localization functional introduced by Marzari and Vanderbilt, and we prove some results about the existence and exponential localization of its minimizers, in dimension d < 4. The proof exploits ideas and methods from the theory of harmonic maps between Riemannian manifolds.

math-ph↗