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Evolution of photo-excited carrier distribution from anisotropic to isotropic and isotropic photon absorption in graphene

Femtosecond time-resolved spectroscopy using 400 nm-pump and 800 nm-probe in CVD-grown multilayer graphene provides strong evidence for isotropic distribution of photoexcited carrier after initial relaxation. Indicative of such isotropic distribution is a pump polarization independence of differential reflectivity (\DeltaR/R) and transmittance (\DeltaT/T) from pump-probe measurements. Combined with results using 800 nm-pump in [arXiv. 1301.1743v3 (2013)], these pump polarization dependences of time-resolved spectroscopy corroborates the evolution of photo-excited carrier distribution from anisotropic to isotropic with carrier relaxation. And, the absorbance of graphene is identical for in-plane and out-of-plane optical fields. No matter the carrier distribution in momentum space, the influence of carrier on in-plane and out-of-plane optical fields from state filling effect is identical. The sign reversing of ps dynamics signal in graphene/graphite should not directly relate to carrier.

cond-mat.mes-hall↗

Spin structure of Graphene/Pt interface for spin current formation and induced magnetization in deposited (Ni-Fe)-nanodots

Spin electronic structure of graphene pi-states and Pt 5d-states for the Graphene/Pt interface has been investigated. Here, we report a large induced spin-orbit splitting (~70-100 meV) of graphene pi-states with formation of non-degenerated Dirac-cone spin states at the K-point of the BZ crossed with spin-polarized Pt 5d-states at Fermi level that opens up a possibility for creation of new spintronics devices. We propose to use this spin structure for formation of spin current with spin locked perpendicular to the momentum for induced remagnetization of the (Ni-Fe)-nanodots arranged atop the interface. Theoretical estimations of the spin current created at the Graphene/Pt interface and the induced intrinsic effective magnetic field leading to the in-plane remagnetization of the NiFe-nanodots due to spin-orbit torque effect are presented. By micromagnetic modeling based on experimentally observed spin-orbit splitting we demonstarte that the induced intrinsic magnetic field might be effectively used for magnetization swithching of the deposited (Ni-Fe)-nanodots.

cond-mat.mes-hall↗

Quantum H-theorem and irreversibility in quantum mechanics

We investigate temporal evolution of von Neumann's entropy in exemplary quantum mechanical systems and show that it grows in systems evolving with incrementally increasing decoherence during scattering processes. We demonstrate that the origin of irreversibility lies in complexity of preparing time-reversed quantum states due to entanglement and in partitioning of the wave function of the evolving system.

quant-ph↗

Melting of Partially Fluorinated Graphene: From Detachment of Fluorine Atoms to Large Defects and Random Coils

The melting of fluorographene is very unusual and depends strongly on the degree of fluorination. For temperatures below 1000 K, fully fluorinated graphene (FFG) is thermo-mechanically more stable than graphene but at T$_m\approx$2800 K FFG transits to random coils which is almost twice lower than the melting temperature of graphene, i.e. 5300 K. For fluorinated graphene (PFG) up to 30 % ripples causes detachment of individual F-atoms around 2000 K while for 40-60 % fluorination, large defects are formed beyond 1500 K and beyond 60% of fluorination F-atoms remain bonded to graphene until melting. The results agree with recent experiments on the dependence of the reversibility of the fluorination process on the percentage of fluorination.

cond-mat.mtrl-sci↗

Space charge dynamics in solid electrolytes with steric effect and Vegard stresses: resistive switching and ferroelectric-like hysteresis of electromechanical response

We performed self-consistent modelling of electrotransport and electromechanical response of solid electrolyte thin films allowing for steric effects of mobile charged defects (ions, protons or vacancies), electron degeneration and Vegard stresses. We establish correlations between the features of the space-charge dynamics, current-voltage and bending-voltage curves in the wide frequency range of applied electric voltage. The pronounced ferroelectric-like hysteresis of bending-voltage loops and current maxima on double hysteresis current-voltage loops appear for the electron-open electrodes. The double hysteresis loop with pronounced humps indicates the resistance switching of memristor-type. The switching occurs due to the strong coupling between electronic and ionic subsystem. The sharp meta-stable maximum of the electron density appears near one open electrode and moves to another one during the periodic change of applied voltage. Our results can explain the nature and correlation of electrical and mechanical memory effects in thin films of solid electrolytes. The analytical expression proving that the electrically induced bending of solid electrolyte films can be detected by interferometric methods is derived.

cond-mat.mtrl-sci↗

Quantum States of an Electron Interacting with Various Dielectric Plate Geometries

The tunability of binding energies is explored by modulating a finite dielectric slab width in a planar, three dielectric system. After verifying the equivalence of the field method and method of images, three different configurations are explored for possible control of electronic binding energy: A vacuum gap between a Schottky diode, noble gas layers on a metal wall, and an electron confined between two metal plates. In each, varying the width of the finite, middle dielectric was shown to provide control over the binding energy and Bohr radius of the electron. In the case of an electron confined between two plates, it was found that the bound states smoothly connect to the box states as the gap separation was varied. Lastly, forces on the two parallel plates were examined for a possible source of significant repulsion. All numerical calculations were done in MATLAB.

quant-ph↗

The electron-hole superfluidity in two coaxial nanotubes

The superfluid phase and Coulomb drag effect caused by the pairing in the system of spatially separated electrons and holes in two coaxial cylindrical nanotubes are predicted. It is found that the drag resistance as a function of temperature experiences a jump at the critical temperature and can be used for the manifestation of the superfluid transition. It is demonstrated that at sufficiently low temperatures the order parameter and free energy density exhibit a kink due to the electron-hole asymmetry that is controlled by the radii of the nanotubes.

cond-mat.supr-con↗

Observation of a bulk 3D Dirac multiplet, Lifshitz transition, and nestled spin states in Na3Bi

Symmetry or topology protected Dirac fermion states in two and three dimensions constitute novel quantum systems that exhibit exotic physical phenomena. However, none of the studied spin-orbit materials are suitable for realizing bulk multiplet Dirac states for the exploration of interacting Dirac physics. Here we present experimental evidence, for the first time, that the compound Na3Bi hosts a bulk spin-orbit Dirac multiplet and their interaction or overlap leads to a Lifshitz transition in momentum space - a condition for realizing interactions involving Dirac states. By carefully preparing the samples at a non-natural-cleavage (100) crystalline surface, we uncover many novel electronic and spin properties in Na3Bi by utilizing high resolution angle- and spin-resolved photoemission spectroscopy measurements. We observe two bulk 3D Dirac nodes that locate on the opposite sides of the bulk zone center point $Γ$, which exhibit a Fermi surface Lifshitz transition and a saddle point singularity. Furthermore, our data shows evidence for the possible existence of theoretically predicted weak 2D nontrivial spin-orbit surface state with helical spin polarization that are nestled between the two bulk Dirac cones, consistent with the theoretically calculated (100) surface-arc-modes. Our main experimental observation of a rich multiplet of Dirac structure and the Lifshitz transition opens the door for inducing electronic instabilities and correlated physical phenomena in Na3Bi, and paves the way for the engineering of novel topological states using Na3Bi predicted in recent theory.

cond-mat.mes-hall↗

Exploring Ultra Low-Power on-Chip Clocking Using Functionality Enhanced Spin-Torque Switches

Emerging spin-torque (ST) phenomena may lead to ultra-low-voltage, high-speed nano-magnetic switches. Such current-based-switches can be attractive for designing low swing global-interconnects, like, clocking-networks and databuses. In this work we present the basic idea of using such ST-switches for low-power on-chip clocking. For clockingnetworks, Spin-Hall-Effect (SHE) can be used to produce an assist-field for fast ST-switching using global-mesh-clock with less than 100mV swing. The ST-switch acts as a compact-latch, written by ultra-low-voltage input-pulses. The data is read using a high-resistance tunnel-junction. The clock-driven SHE write-assist can be shared among large number of ST-latches, thereby reducing the load-capacitance for clock-distribution. The SHE assist can be activated by a low-swing clock (~150mV) and hence can facilitate ultra-low voltage clock-distribution. Owing to reduced clock-load and low-voltage operation, the proposed scheme can achieve 97% low-power for on-chip clocking as compared to the state of the art CMOS design. Rigorous device-circuit simulations and system-level modelling for the proposed scheme will be addressed in future.

cond-mat.mes-hall↗

Effects of homogenous broadening on the Rabi splitting in micropillar cavities with strong light-matter interaction

We solve the low-energy part of the spectrum of a model that describes a cavity mode strongly coupled to an exciton, and both modes coupled to continua of bosonic excitations which give rise to homogeneous broadenig. The spectral density of the cavity modes in the low-energy manifold agrees with measured photoluminiscense spectra. We suggest fitting these spectra with a sum of two asymmetric Lorentzians.

cond-mat.mes-hall↗

A Memory of Majorana Fermions through Quantum Quench

We study the sudden quench of a one-dimensional p-wave superconductor through its topological signature in the entanglement spectrum. The long-time evolution of the system and its topological characterization depend on a pseudomagnetic field ${\bs R}_{\mbox{\text eff}}(k)$, which connects both the initial and the final Hamiltonians, hence exhibiting a memory effect. In particular, we explore the robustness of the Majorana zero-mode associated with the entanglement cut in the topologically nontrivial phase and identify the parameter space in which the mode can survive in the infinite-time limit.

cond-mat.mes-hall↗

Attachment of Surface "Fermi Arcs" to the Bulk Fermi Surface: "Fermi-Level Plumbing" in Topological Metals

The role of "Fermi arc" surface-quasiparticle states in "topological metals" (where some Fermi surface sheets have non-zero Chern number) is examined. They act as "Fermi-level plumbing" conduits that transfer quasiparticles among groups of apparently-disconnected Fermi sheets with non-zero Chern numbers to maintain equality of their chemical potentials, which is required by gauge invariance. Fermi arcs have a chiral tangential attachment to the surface projections of sheets of the bulk Fermi Surface: the total Chern number of each projection equals the net chirality of arc-attachments to it. Information from the Fermi arcs is needed to unambiguously determine the quantized part of the anomalous Hall effect that is not determined at the bulk Fermi surface.

cond-mat.str-el↗

A Comprehensive Review of Heat Transfer in Thermoelectric Materials and Devices

Solid-state thermoelectric devices are currently used in applications ranging from thermocouple sensors to power generators in satellites, to portable air-conditioners and refrigerators. With the ever-rising demand throughout the world for energy consumption and CO2 reduction, thermoelectric energy conversion has been receiving intensified attention as a potential candidate for waste-heat harvesting as well as for power generation from renewable sources. Efficient thermoelectric energy conversion critically depends on the performance of thermoelectric materials and devices. In this review, we discuss heat transfer in thermoelectric materials and devices, especially phonon engineering to reduce the lattice thermal conductivity of thermoelectric materials, which requires a fundamental understanding of nanoscale heat conduction physics.

cond-mat.mtrl-sci↗

Anisotropy of Conductivity in Bilayer Graphene with Relatively Shifted Layers

A transformation of the band structure in bilayer graphene (BLG) with relatively shifted layers has been studied in the framework of the tight-binding model. BLG is demonstrated to remain a zero-gap material in the whole range of experimentally attainable shifts, but the positions of contact points between the conduction and valence bands depend substantially on the shift direction. The shift results in a considerable anisotropy of the band spectrum, which is, in turn, responsible for a substantial (10-20%) anisotropy of the conductivity in BLG. A possibility of using this anisotropy in high-sensitive sensors of a mechanical tension and for the generation of a purely valley current in multivalley anisotropic BLG in the case where both the average spin and the average current of electrons are equal to zero is discussed.

cond-mat.mes-hall↗

Experimental Discovery of Topological Surface States - A New Type of 2D Electron Systems (Review Article)

Topological Surface States (TSS) represent new types of two dimensional electron systems with novel and unprecedented properties distinct from any quantum Hall-like or spin-Hall effects. Their Z$_2$ topological order can be realized at room temperatures without magnetic fields and they can be turned into magnets, exotic superconductors or Kondo insulators leading to worldwide interest and activity in the topic. We review the basic concepts defining such topological matter and the experimental discovery via the key experimental probe that revealed the Z$_2$ topological order in the bulk of these spin-orbit interaction dominated insulators for the first time. This review focuses on the key results that demonstrated the fundamental Z$_2$ topological properties such as spin-momentum locking, non-trivial Berry's phases, mirror Chern number, absence of backscattering, bulk-boundary correspondence (topology), protection by time-reversal and other discrete (mirror) symmetries and their remarkable persistence up to the room temperature elaborating on results first briefly discussed in an early review by M.Z. Hasan and C.L. Kane [Rev. of Mod. Phys., 82, 3045 (2010)]. Additionally, key results on broken symmetry phases such as quantum magnetism and superconductivity induced in topological materials are briefly discussed. Topological insulators beyond the Z$_2$ classification such as Topological Crystalline Insulators (TCI) are discussed based on their spin properties (mirror Chern invariants). The experimental methodologies detailed here have been used in most of the subsequent studies of Z$_2$ topological physics in almost all bulk topological insulator materials to this date.

cond-mat.mes-hall↗

Analytic form of head-to-head domain walls in thin ferromagnetic cylinders

The one-dimensional problem of a static head-to-head domain wall structure in a thin soft-magnetic nanowire with circular cross-section is treated within the framework of micromagnetic theory. A radius-dependent analytic form of the domain wall profile is derived by decomposing the magnetostatic energy into a monopolar and a dipolar term. We present a model in which the dipolar term of the magnetostatic energy resulting from the transverse magnetization in the center of the domain wall is calculated with Osborn's formulas for homogeneously magnetized ellipsoids [Phys. Rev. 67, 351 (1945)]. The analytic results agree almost perfectly with simulation data as long as the wire diameter is sufficiently small to prevent inhomogeneities of the magnetization along the cross-section. Owing to the recently demonstrated negligible Döring mass of these walls, our results should also apply to the dynamic case, where domain walls are driven by spin-transfer toque effects and/or an axial magnetic field.

cond-mat.mes-hall↗

Discrete Charging in Polysilicon Gates of Single Electron Transistors

Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional conductance fluctuations in the nonlinear regime. By comparison with simulations these features are quantitatively attributed to the effects of discretely charged islands in the polysilicon gates.

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