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arXiv2013

Supermetallic and Trapped States in Periodically Kicked Lattices

A periodically driven lattice with two commensurate spatial periodicities is found to exhibit super metallic states characterized by enhancements in wave packet spreading and entropy. These resonances occur at critical values of parameters where multi-band dispersion curves reduce to a universal function that is topologically a circle and the effective quantum dynamics describes free propagation. Sandwiching every resonant state are a pair of anti-resonant {\it trapped states} distinguished by dips in entropy where the transport, as seen in the spreading rate, is only somewhat inhibited. Existing in gapless phases fo the spectrum, a sequence of these peaks and dips are interspersed by gapped phases assocated with flat band states where both the wave packet spreading as well as the entropy exhibit local minima.

cond-mat.dis-nn↗

arXiv2013

Intrinsic Magnetism of Grain Boundaries in Two-dimensional Metal Dichalcogenides

Grain boundaries (GBs) are structural imperfections that typically degrade the performance of materials. Here we show that dislocations and GBs in two-dimensional (2D) metal dichalcogenides MX2 (M = Mo, W; X = S, Se) can actually improve the material by giving it a qualitatively new physical property: magnetism. The dislocations studied all have a substantial magnetic moment of ~1 Bohr magneton. In contrast, dislocations in other well-studied 2D materials are typically non-magnetic. GBs composed of pentagon-heptagon pairs interact ferromagnetically and transition from semiconductor to half-metal or metal as a function of tilt angle and/or doping level. When the tilt angle exceeds 47° the structural energetics favor square-octagon pairs and the GB becomes an antiferromagnetic semiconductor. These exceptional magnetic properties arise from an interplay of dislocation-induced localized states, doping, and locally unbalanced stoichiometry. Purposeful engineering of topological GBs may be able to convert MX2 into a promising 2D magnetic semiconductor.

cond-mat.mtrl-sci↗

arXiv2013

The resistance of 2D Topological insulator in the absence of the quantized transport

We report unconventional transport properties of HgTe wells with inverted band structure: the resistance does not show insulating behavior even when it is of the order of $10^2\times h/2e^{2}$. The system is expected to be a two-dimensional topological insulator with a dominant edge state contribution. The results are inconsistent with theoretical models developed within the framework of the helical Luttinger liquid.

cond-mat.mes-hall↗

arXiv2013

Elastic Strains in SiGe Heterostructure With Non-Uniform Quantum Dots

Elastic strain distributions in SiGe heterostructures with quantum dots have been simulated with the use of the finite element method. The effect of a non-uniform germanium distribution in the nanoislands on the spatial dependence and the magnitude of elastic fields was studied. It is shown that quantum dots with a uniform component content are more strained in comparison with non-uniform nanoislands

cond-mat.mes-hall↗

arXiv2013

Spin Dynamics in Graphene and Graphene like Nanocarbon Doped with Nitrogen the ESR Analysis

Nano engineered spin degree of freedom in carbon system may offer desired exchange coupling with optimum spin orbit interaction which is essential, to construct solid state qubits, for fault tolerant quantum computation. The purpose of this communication is to analyze spin dynamics of, basically, four types of systems, (i) Graphene (system with inversion symmetry), (ii) Graphene like nanocarbons (GNCs, broken inversion symmetry and heterostructure, sp2 and sp3, environment), and (iii) their nitrogen doped derivatives. The spin transport data was obtained using the electron spin resonance spectroscopy (ESR) technique, carried out over 123 to 473K temperature range. Analysis of shape, linewidths of dispersion derivatives,, and g factor anisotropy has been carried out. Spin parameters such as, spin spin relaxation time, spin lattice relaxation time, spin flip parameter,spin relaxation rate,spin, momentum relaxation rate,pseudo chemical potential, density of states, effective magnetic moment, spin concentration, defect concentration, and Pauli susceptibility, has been estimated, and examined for their temperature as well as interdependence. Details of the analysis are presented. The quantitative study underlined the following facts: (i) by and large, spin dynamics in Graphene and GNCs is significantly different, (ii) transport of spin behaves in opposite fashion, after doping nitrogen, in both the systems, (iii) reduction in the magnetization has been observed for both GNCs and Graphene, after doping nitrogen, (iv) hyperfine interactions have been observed in all classes of systems except in GNCs, (v) nitrogen doped GNCs seems to be appropriate for qubit designing.

physics.atm-clus↗

arXiv2013

Curvature-induced Rashba spin-orbit interaction in strain-driven nanostructures

We derive the effective dimensionally reduced Schrödinger equation with spin-orbit interaction in low-dimensional electronic strain driven nanostructures. A method of adiabatic separation among fast normal quantum degrees of freedom and slow tangential quantum degrees of freedom is used to show the emergence of a strain-induced Rashba-like spin-orbit interaction (SOI). By applying this analysis to one-dimensional curved quantum wires we demonstrate that the curvature-induced Rashba SOI leads to enhanced spin-orbit effects.

cond-mat.mes-hall↗

arXiv2013

Influence of multi-electronic states on few-quantum-dot nanolasers

We present an experimental and theoretical study on the gain mechanism in a photonic-crystal-cavity nanolaser with embedded quantum dots. From time-resolved measurements at low excitation power we find that four excitons are coupled to the cavity. At high excitation power we observe a smooth low-threshold transition from spontaneous emission to lasing. Before lasing emission sets in, however, the excitons are observed to saturate, and the gain required for lasing originates rather from multi-electronic transitions, which give rise to a broad emission background. We compare the experiment to a model of quantum-dot microcavity lasers and find that the number of emitters feeding the cavity must greatly exceed four, which confirms that the gain is provided by multi-electronic states. Our results are consistent with theoretical predictions.

cond-mat.mes-hall↗

arXiv2013

Variable range of the RKKY interaction in edged graphene

The indirect exchange interaction is one of the key factors in determining the overall alignment of magnetic impurities embedded in metallic host materials. In this work we examine the range of this interaction in magnetically-doped graphene systems in the presence of armchair edges using a combination of analytical and numerical Green function (GF) approaches. We consider both a semi-infinite sheet of graphene with a single armchair edge, and also quasi-one-dimensional armchair edged graphene nanoribbons (GNRs). While we find signals of the bulk decay rate in semi-infinite graphene and signals of the expected one-dimensional decay rate in GNRs, we also find an unusually rapid decay for certain instances in both, which manifests itself whenever the impurities are located at sites which are a multiple of three atoms from the edge. This decay behavior emerges from both the analytic and numerical calculations, and the result for semi-infinite graphene can be interpreted as an intermediate case between ribbon and bulk systems.

cond-mat.mes-hall↗

arXiv2013

Graphene Nanotechnology for the Next Generation Nonvolatile Memory

As conventional silicon technology is approaching its fundamental material and physical limits with continuous scaling, there is a growing push to look for new platform to design memory circuits for nanoelectronic applications. In this paper we explore new design concept of nonvolatile memory based on graphene nanotechnology. The investigation focuses on two forms of graphene based field effect transistor (FET) carbon nanotube FET (CNTFET) and graphene nanoribbon FET (GNRFET). The analysis reveals that GNRFET with a high trapping capable oxide layer is suitable for ultra high ensity nonvolatile memory.

cond-mat.mes-hall↗

arXiv2013

Origin of defects responsible for charge transport in resistive random access memory based on hafnia

A promising candidate for universal memory, which would involve combining the most favourable properties of both high-speed dynamic random access memory (DRAM) and non-volatile flash memory, is resistive random access memory (ReRAM). ReRAM is based on switching back and forth from a high-resistance state (HRS) to a low-resistance state (LRS). ReRAM cells are small, allowing for the creation of memory on the scale of terabits. One of the most promising materials for use as the active medium in resistive memory is hafnia (HfO$_2$). However, an unresolved physics is the nature of defects and traps that are responsible for the charge transport in HRS state of resistive memory. In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the HRS charge transport in resistive memory elements based on HfO$_2$. We also demonstrated that LRS transport occurs through a mechanism described according to percolation theory. Based on the model of multiphonon tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics were achieved. The thermal excitation energy of the traps in hafnia was determined based on the excitation spectrum and luminescence of the oxygen vacancies. The findings of this study demonstrate that in resistive memory elements using hafnia, the oxygen vacancies in hafnia play a key role in creating defects in HRS charge transport.

cond-mat.mes-hall↗

arXiv2013

Microwave and millimeterwave electrical permittivity of graphene monolayer

The effective electrical permittivity of a graphene monolayer is experimentally investigated in the 5-40 GHz range, which encompasses the microwave and the lower part of millimeterwave spectrum. The measurements were carried out using a coupled coplanar waveguide placed over a graphene monolayer flake, which is deposited on Si/SiO2. In contrast to some initial predictions, the effective permittivity of the graphene monolayer is slightly decreasing in the above-mentioned frequency range and has an average value of 3.3.

cond-mat.mes-hall↗

arXiv2013

Novel Giant Magnetoresistance Model using Multiple Barrier Potential

This paper proposes a new model for Giant Magnetoresistance (GMR) and calculates its typical graph qualitatively. The model foundation is the microscopic mechanism in GMR, where the GMR effect can be explained by intrinsic and extrinsic potential. The potentials are spin-dependent. The potentials determine the transmission probability then it will give conductance value. Here, the multiple barrier potential model is proposed as the new GMR model. The transmission probability is determined using transfer matrix method. It was found that this model is fit qualitatively with the typical GMR graph.

cond-mat.mtrl-sci↗

arXiv2013

High-contrast Aharonov-Bohm oscillations in the acoustoelectric transport regime

Phase-coherent acoustoelectric transport is reported.Aharonov-Bohm oscillations in the acoustoelectric current with visibility exceeding 100% were observed in mesoscopic GaAs rings as a function of an external magnetic field at cryogenic temperatures. A theoretical analysis of the acoustoelectric transport in ballistic devices is proposed to model experimental observations. Our findings highlight a close analogy between acoustoelectric transport and thermoelectric properties in ballistic devices.

cond-mat.mes-hall↗

arXiv2013

A nearly relaxation-free opto-electronic memory from ultra-thin graphene-MoS$_2$ binary hybrids

Ultra-thin planar heterostructures of graphene and other two-dimensional crystals have recently attracted much interest. Very high carrier mobility in a graphene-on-boron nitride assembly is now well-established, but it has been anticipated that appropriately designed hybrids could perform other tasks as well. A heterostructure of graphene and molybdenum disulphide (MoS$_2$) is expected to be sensitive to photo illumination due to the optical bandgap in MoS$_2$. Despite significant advances in device architectures with both graphene and MoS$_2$, binary graphene-MoS$_2$ hybrids have not been realized so far, and the promising opto-electronic properties of such structures remain elusive. Here we demonstrate experimentally that graphene-on-MoS$_2$ binary heterostructures display an unexpected and remarkable persistent photoconductivity under illumination of white light. The photoconductivity can not only be tuned independently with both light intensity and back gate voltage, but in response to a suitable combination of light and gate voltage pulses the device functions as a re-writable optoelectronic switch or memory. The persistent, or `ON', state shows virtually no relaxation or decay within the the experimental time scales for low and moderate photoexcitation intensity, indicating a near-perfect charge retention. A microscopic model associates the persistence with strong localization of carriers in MoS$_2$. These effects are also observable at room temperature, and with chemical vapour deposited graphene, and hence are naturally scalable for large area applications.

cond-mat.mtrl-sci↗

arXiv2013

Spin Coated Plasmonic Nanoparticle Interfaces for Photocurrent Enhancement in Thin Film Si Solar Cells

Nanoparticle (NP) arrays of noble metals strongly absorb light in the visible to infrared wavelengths through resonant interactions between the incident electromagnetic field and the metal's free electron plasma. Such plasmonic interfaces enhance light absorption and photocurrent in solar cells. We report a cost effective and scalable room temperature/pressure spin-coating route to fabricate broadband plasmonic interfaces consisting of silver NPs. The NP interface yields photocurrent enhancement (PE) in thin film silicon devices by up to 200% which is significantly greater than previously reported values. For coatings produced from Ag nanoink containing particles with average diameter of 40 nm, an optimal NP surface coverage of 7% was observed. Scanning electron microscopy of interface morphologies revealed that for low surface coverage, particles are well-separated, resulting in broadband PE. At higher surface coverage, formation of particle strings and clusters caused red-shifting of the PE peak and a narrower spectral response.

cond-mat.mes-hall↗

arXiv2013

Relativistic symmetry in deformed nuclei by similarity renormalization group

The similarity renormalization group is used to transform a general Dirac Hamiltonian into diagonal form. The diagonal Dirac operator consists of the nonrelativistic term, the spin-orbit term, the dynamical term, and the relativistic modification of kinetic energy, which are very useful to explore the symmetries hidden in the Dirac Hamiltonian for any deformed system. As an example, the relativistic symmetries in an axially deformed nucleus are investigated by comparing the contributions of every term to the single particle energies and their correlations with the deformation. The result shows that the deformation considerably influences the spin-orbit interaction and dynamical effect, which play a critical role in the relativistic symmetries and its breaking.

nucl-th↗

arXiv2013

Electronic structure and transport in graphene: quasi-relativistic Dirac--Hartry--Fock self-consistent field approximation

Application of secondary quantized self-consistent Dirac -- Hartree -- Fock approach to consider electronic properties of monolayer graphene with accounting of spin-polarized states allows to coherently explain experimental results on energy band minigaps and charge carrier asymmetry in graphene, propose a description of valent and conduction zones shifts and gives a nice theoretical estimation of electron and holes cyclotron masses which is in very good agreement with known experimental data.

cond-mat.mes-hall↗

arXiv2013

Multiscale modeling of solar cells with interface phenomena

We describe a mathematical model for heterojunctions in semiconductors which can be used, e.g., for modeling higher efficiency solar cells. The continuum model involves well-known drift-diffusion equations posed away from the interface. These are coupled with interface conditions with a nonhomogeneous jump for the potential, and Robin-like interface conditions for carrier transport. The interface conditions arise from approximating the interface region by a lower-dimensional manifold. The data for the interface conditions are calculated by a Density Functional Theory (DFT) model over a few atomic layers comprising the interface region. We propose a domain decomposition method (DDM) approach to decouple the continuum model on subdomains which is implemented in every step of the Gummel iteration. We show results for CIGS/CdS, Si/ZnS, and Si/GaAs heterojunctions.

physics.comp-ph↗