@misc{indiciae38c2465b70f1,
  title = {Interfacial Hole Accumulation Enables Selective Free-Surface Formation in Ge-on-Si},
  author = {Youcef A Bioud and Meriem Bouchilaoun and Waldemar Schreiber and Redouane Amrar and Gilles Patriarche and Ali Soltani and Stefan Janz},
  year = {2026},
  url = {https://arxiv.org/abs/2611.04589},
  note = {Source identifier: 2611.04589}
}