arXiv subjects

Zhiming Yu

Publications and source records attributed to Zhiming Yu.

5 recordsLinked to original sources

arXiv2026

FePySR: A Neural Feature Extraction Framework for Efficient and Scalable Symbolic Regression

A fundamental challenge in symbolic regression (SR) is efficiently recovering complex mathematical expressions from observational data. Although this problem is NP-hard, many expressions of practical interest decompose naturally into combinations of nonlinear feature modules, concentrating structural complexity into a small number of reusable components. Here, we introduce FePySR, a two-stage framework that reduces the SR search space by extracting valid features prior to equation search. FePySR first employs a heterogeneous neural network to constrain observational data to a set of candidate expressions, then performs structural optimization within this refined expression space using PySR. Across five standard benchmarks, FePySR outperforms state-of-the-art methods by achieving higher equation recovery rates. On a set of 75 highly complex synthesized equations, FePySR recovers 36 equations, while producing substantially smaller mean squared errors on the remaining unrecovered cases, with reduced computation time compared to PySR. FePySR's first stage also maintains consistent performance under varying numbers of selected top features and increasing levels of noise in the observational data. Applied to ordinary differential equations governing biological systems, FePySR successfully identifies governing equations in 24 out of 100 tests where PySR recovers none. Taken together, FePySR is a generalizable framework that can enhance the SR solvers, enabling the efficient and reliable recovery of symbolic expressions across scientific domains.

cs.SC↗

arXiv2022

Anomalous spatial shifts in interface electronic reflection beyond linear approximation

Recently, the electronic analogy of the anomalous spatial shift, including Goos-H\"{a}nchen and Imbert-Fedorov effects, has been attracting widespread interest. The current research on the anomalous spatial shift in interface electronic reflection is based on the paradigm of linear approximation, under which the center position of the incident and reflected beams are obtained by expanding the phases of relevant basis states and scattering amplitudes to the first order of incident momentum. However, in a class of normal cases, the linear approximation can lead to a divergent spatial shift in reflection for certain incident angles even though the corresponding reflection possibility is finite. In this work, we show that such non-physical results are caused by an abrupt change in the number of the propagating states at critical parameters, and can be resolved by calculating the center positions of the scattering beams beyond the linear approximation. Moreover, we find that the beam width has an important influence on the spatial shift near the critical angles. We demonstrate our idea via concrete calculations of Goos-H\"{a}nchen and Imbert-Fedorov shift on two representative models. These results are beneficial for clarifying the scope of application of the linear approximation in the study of anomalous spatial shifts.

cond-mat.mes-hall↗

arXiv2020

Ultralong carrier lifetime of topological edge states in a-Bi4Br4

The rising of quantum spin Hall insulators (QSHI) in two-dimensional (2D) systems has been attracting significant interest in current research, for which the 1D helical edge states, a hallmark of QSHI, are widely expected to be a promising platform for next-generation optoelectronics. However, the dynamics of the 1D edge states has not yet been experimentally addressed. Here, we report the observation of optical response of the topological helical edge states in a-Bi4Br4, using the infrared-pump infrared-probe microscopic spectroscopy. Remarkably, we observe that the carrier lifetime of the helical edge states reaches nanosecond-scale at room temperature, which is about 2 - 3 orders longer than that of most 2D topological surface states and is even comparable with that of the well developed optoelectronics semiconductors used in modern industry. The ultralong carrier lifetime of the topological edge states may be attributed to their helical and 1D nature. Our findings not only provide an ideal material for further investigations of the carrier dynamics of 1D helical edge states but also pave the way for its application in optoelectronics.

cond-mat.mtrl-sci↗

arXiv2016

Theoretical prediction of MoN2 monolayer as a high capacity electrode material for metal ion batteries

Benefited from the advantages on environmental benign, easy purification, and high thermal stability, the recently synthesized two-dimensional (2D) material MoN2 shows great potential for clean and renewable energy applications. Here, through first-principles calculations, we show that the monolayered MoN2 is promising to be a high capacity electrode material for metal ion batteries. Firstly, identified by phonon dispersion and exfoliation energy calculations, MoN2 monolayer is proved to be structurally stable and could be exfoliated from its bulk counterpart in experiments. Secondly, all the studied metal atoms (Li, Na and K) can be adsorbed on MoN2 monolayer, with both pristine and doped MoN2 being metallic. Thirdly, the metal atoms possess moderate/low migration barriers on MoN2, which ensures excellent cycling performance as a battery electrode. In addition, the calculated average voltages suggest that MoN2 monolayer is suitable to be a cathode for Li-ion battery and anodes for Na-ion and K-ion batteries. Most importantly, as a cathode for Li-ion battery, MoN2 possesses a comparable average voltage but a 1-2 times larger capacity (432 mA h g-1) than usual commercial cathode materials; as an anode for Na-ion battery, the theoretical capacity (864 mA h g-1) of MoN2 is 2-5 times larger than typical 2D anode materials such as MoS2 and most MXenes. Finally we also provide an estimation of capacities for other transition-metal dinitrides materials. Our work suggests that the transition-metal dinitrides MoN2 is an appealing 2D electrode materials with high storage capacities.

cond-mat.mtrl-sci↗

arXiv2015

Electric field controlled spin- and valley-polarized edge states in silicene with extrinsic Rashba effect

In the presence of extrinsic Rashba spin-orbit coupling, we find that silicene can host a new quantum anomalous Hall state with spin- and valley-polarized edge states, which can be effectively controlled by the exchange field and electric field. In this new state, the pair of nontrivial edge states reside in one specific valley and have a strong but opposite spin polarization. A distinctive feature of this new state is that both of the spin and valley index of the edge states can be switched by reversing the electric field. We also present a microscopic mechanism for the origination of the new state. Our findings provide an efficient way to control the topologically protected spin- and valley-polarized edge states, which is crucial for spintronics and valleytronics.

cond-mat.mes-hall↗