arXiv subjects

Zhengyang Zhao

Publications and source records attributed to Zhengyang Zhao.

33 records · Page 2Linked to original sources

arXiv2021

Surface Acoustic Wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions

We show that a surface acoustic wave (SAW) applied across the terminals of a magnetic tunnel junction (MTJ) decreases both the (time-averaged) parallel and antiparallel resistances of the MTJ, with the latter decreasing much more than the former. This results in a decrease of the tunneling magnetoresistance (TMR) ratio. The coercivities of the free and fixed layer of the MTJ, however, are not affected significantly, suggesting that the SAW does not cause large-angle magnetization rotation in the magnetic layers through the inverse magnetostriction (Villari) effect at the power levels used. This study sheds light on the dynamical behavior of an MTJ under periodic compressive and tensile strain.

cond-mat.mes-hall↗

arXiv2021

LightXML: Transformer with Dynamic Negative Sampling for High-Performance Extreme Multi-label Text Classification

Extreme Multi-label text Classification (XMC) is a task of finding the most relevant labels from a large label set. Nowadays deep learning-based methods have shown significant success in XMC. However, the existing methods (e.g., AttentionXML and X-Transformer etc) still suffer from 1) combining several models to train and predict for one dataset, and 2) sampling negative labels statically during the process of training label ranking model, which reduces both the efficiency and accuracy of the model. To address the above problems, we proposed LightXML, which adopts end-to-end training and dynamic negative labels sampling. In LightXML, we use generative cooperative networks to recall and rank labels, in which label recalling part generates negative and positive labels, and label ranking part distinguishes positive labels from these labels. Through these networks, negative labels are sampled dynamically during label ranking part training by feeding with the same text representation. Extensive experiments show that LightXML outperforms state-of-the-art methods in five extreme multi-label datasets with much smaller model size and lower computational complexity. In particular, on the Amazon dataset with 670K labels, LightXML can reduce the model size up to 72% compared to AttentionXML.

cs.CL↗

arXiv2020

An Inference and Learning Engine for Spiking Neural Networks in Computational RAM (CRAM)

Spiking Neural Networks (SNN) represent a biologically inspired computation model capable of emulating neural computation in human brain and brain-like structures. The main promise is very low energy consumption. Unfortunately, classic Von Neumann architecture based SNN accelerators often fail to address demanding computation and data transfer requirements efficiently at scale. In this work, we propose a promising alternative, an in-memory SNN accelerator based on Spintronic Computational RAM (CRAM) to overcome scalability limitations, which can reduce the energy consumption by up to 164.1$\times$ when compared to a representative ASIC solution.

cs.ET↗

arXiv2019

A Machine Learning Accelerator In-Memory for Energy Harvesting

There is increasing demand to bring machine learning capabilities to low power devices. By integrating the computational power of machine learning with the deployment capabilities of low power devices, a number of new applications become possible. In some applications, such devices will not even have a battery, and must rely solely on energy harvesting techniques. This puts extreme constraints on the hardware, which must be energy efficient and capable of tolerating interruptions due to power outages. Here, as a representative example, we propose an in-memory support vector machine learning accelerator utilizing non-volatile spintronic memory. The combination of processing-in-memory and non-volatility provides a key advantage in that progress is effectively saved after every operation. This enables instant shut down and restart capabilities with minimal overhead. Additionally, the operations are highly energy efficient leading to low power consumption.

cs.ET↗

arXiv2019

PIMBALL: Binary Neural Networks in Spintronic Memory

Neural networks span a wide range of applications of industrial and commercial significance. Binary neural networks (BNN) are particularly effective in trading accuracy for performance, energy efficiency or hardware/software complexity. Here, we introduce a spintronic, re-configurable in-memory BNN accelerator, PIMBALL: Processing In Memory BNN AcceL(L)erator, which allows for massively parallel and energy efficient computation. PIMBALL is capable of being used as a standard spintronic memory (STT-MRAM) array and a computational substrate simultaneously. We evaluate PIMBALL using multiple image classifiers and a genomics kernel. Our simulation results show that PIMBALL is more energy efficient than alternative CPU, GPU, and FPGA based implementations while delivering higher throughput.

cs.ET↗

arXiv2018

Computational RAM to Accelerate String Matching at Scale

Traditional Von Neumann computing is falling apart in the era of exploding data volumes as the overhead of data transfer becomes forbidding. Instead, it is more energy-efficient to fuse compute capability with memory where the data reside. This is particularly critical for pattern matching, a key computational step in large-scale data analytics, which involves repetitive search over very large databases residing in memory. Emerging spintronic technologies show remarkable versatility for the tight integration of logic and memory. In this paper, we introduce CRAM-PM, a novel high-density, reconfigurable spintronic in-memory compute substrate for pattern matching.

cs.AR↗

arXiv2018

SkyLogic - A proposal for a skyrmion logic device

This work proposes a novel logic device (SkyLogic) based on skyrmions, which are magnetic vortex-like structures that have low depinning current density and are robust to defects. A charge current sent through a polarizer ferromagnet (P-FM) nucleates a skyrmion at the input end of an intra-gate FM interconnect with perpendicular magnetic anisotropy (PMA-FM). The output end of the PMA--FM forms the free layer of an MTJ stack. A spin Hall metal (SHM) is placed beneath the PMA-FM. The skyrmion is propagated to the output end of the PMA-FM by passing a charge current through the SHM. The resistance of the MTJ stack is low (high) when a skyrmion is present (absent) in the free layer, thereby realizing an inverter. A framework is developed to analyze the performance of the SkyLogic device. A circuit-level technique is developed that counters the transverse displacement of skyrmion in the PMA-FM and allows use of high current densities for fast propagation. The design space exploration of the PMA-FM material parameters is performed to obtain an optimal design point. At the optimal point, we obtain an inverter delay of 434 ps with a switching energy of 7.1 fJ.

cs.ET↗

arXiv2018

Field-free switching of perpendicular magnetic tunnel junction by the interplay of spin orbit and spin transfer torques

Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. In particular, an external magnetic field is required for spin-orbit torque to execute deterministic switching in perpendicular magnetic tunnel junctions; the demand for reduced spin-transfer torque switching current to realize ultralow power is still remaining. Thus, a more advanced switching mechanism is urgently needed to move forward spintronics for wide applications. Here, we experimentally demonstrate the field-free switching of three-terminal perpendicular-anisotropy nanopillar devices through the interaction between spin-orbit and spin-transfer torques. The threshold current density of spin-transfer torque switching is reduced to 0.94 MA.cm-2, which is a significant decrease compared to that in other current-induced magnetization switching mechanisms. In addition, thanks to the interplay of spin-orbit and spin-transfer torques, lower current-induced switching in the conventional two-terminal perpendicular magnetic tunnel junctions is also achieved.

physics.app-ph↗

arXiv2018

L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions

Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic memory and logic devices. The addition of an antiferromagnetic layer to these MTJs was recently predicted to facilitate ultra-fast magnetization switching. Here, we report a demonstration of a bulk perpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a (001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ru spacer. The L10 FePd P-SAFM structure shows a large bulk PMA (~10.2 Merg/cc) and strong antiferromagnetic coupling (~2.60 erg/cm2). Full perpendicular magnetic tunnel junctions (P-MTJs) with a L10 FePd P-SAFM layer are then fabricated. Tunneling magnetoresistance ratios of up to ~25% (~60%) are observed at room temperature (5K) after post-annealing at 350 C. Exhibiting high thermal stabilities and large Ku, the bulk P-MTJs with an L10 FePd P-SAFM layer could pave a way for next-generation ultrahigh-density and ultra-low-energy spintronic applications.

cond-mat.mtrl-sci↗

arXiv2017

External-Field-Free Spin Hall Switching of Perpendicular Magnetic Nanopillar with a Dipole-Coupled Composite Structure

Spin Hall effect (SHE) induced reversal of perpendicular magnetization has attracted significant interest, due to its potential to lead to low power memory and logic devices. However, the switching requires an assisted in-plane magnetic field, which hampers its practical applications. Here, we introduce a novel approach for external-field-free spin Hall switching of a perpendicular nanomagnet by utilizing a local dipolar field arising from an adjacent in-plane magnetic layer. Robust switching of perpendicular CoFeB nanopillars in a dipole-coupled composite stack is experimentally demonstrated in the absence of any external magnetic field, in consistent with the results of micromagnetic simulation. Large in-plane compensation field of about 135 Oe and out-of-plane loop shift of about 45 Oe / 10 7 A cm-2 are obtained in the nanopillar devices with composite structure. By performing micromagnetic simulations, we confirm the composite external-field-free switching strategy can also work for a 10 x 10 nm2 circular pillar. Compared with other proposed methods for external-field-free spin Hall switching of perpendicular magnetization, the dipole-coupled composite structure is compatible with a wide range of spin Hall systems and perpendicular magnetic tunnel junctions, paving the way towards practical SHE-based MRAM and logic applications.

cond-mat.mtrl-sci↗

arXiv2017

CoMET: Composite-Input Magnetoelectric-based Logic Technology

This work proposes CoMET, a fast and energy-efficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a composite structure - a ferromagnet (FM) with in-plane magnetic anisotropy (IMA) placed on top of an intra-gate FM interconnect with perpendicular magnetic anisotropy (PMA). Through the magnetoelectric (ME) effect, the input voltage nucleates a domain wall (DW) at the input end of the PMA-FM interconnect. An applied current then rapidly propagates the DW towards the output FE structure, where the inverse-ME effect generates an output voltage. This voltage is propagated to the input of the next CoMET device using a novel circuit structure that enables efficient device cascading. The material parameters for CoMET are optimized by systematically exploring the impact of parameter choices on device performance. Simulations on a 7nm CoMET device show fast, low-energy operation, with a delay/energy of 98ps/68aJ for INV and 135ps/85aJ for MAJ3.

cs.ET↗

arXiv2017

Room-temperature perpendicular magnetization switching through giant spin-orbit torque from sputtered BixSe(1-x) topological insulator material

The spin-orbit torque (SOT) arising from materials with large spin-orbit coupling promises a path for ultra-low power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered BixSe(1-x) thin films in BixSe(1-x)/CoFeB heterostructures by using a dc planar Hall method. Remarkably, the spin Hall angle (SHA) was found to be as large as 18.83, which is the largest ever reported at room temperature (RT). Moreover, switching of a perpendicular CoFeB multilayer using SOT from the BixSe(1-x) has been observed with the lowest-ever switching current density reported in a bilayer system: 2.3 * 105 A/cm2 at RT. The giant SHA, smooth surface, ease of growth of the films on silicon substrate, successful growth and switching of a perpendicular CoFeB multilayer on BixSe(1-x) film opens a path for use of BixSe(1-x) topological insulator (TI) material as a spin-current generator in SOT-based memory and logic devices.

cond-mat.mes-hall↗

arXiv2016

Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology

Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel junctions (MTJ) on a Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) piezoelectric substrate with (001) orientation. It is found that the magnetic easy axis, switching field, and the tunnel magnetoresistance (TMR) of the MTJ can be efficiently controlled by strain from the underlying piezoelectric layer upon the application of a gate voltage. Repeatable voltage controlled MTJ toggling between high/low-resistance states is demonstrated. More importantly, instead of relying on the intrinsic anisotropy of the piezoelectric substrate to generate the required strain, we utilize anisotropic strain produced using local gating scheme, which is scalable and amenable to practical memory applications. Additionally, the adoption of crystalline MgO-based MTJ on piezoelectric layer lends itself to high TMR in the strain-mediated MRAM devices.

cond-mat.mes-hall↗

arXiv2015

Spin Hall Switching of the Magnetization in Ta/TbFeCo Structures with Bulk Perpendicular Anisotropy

Spin-orbit torques are studied in Ta/TbFeCo patterned structures with a bulk perpendicular magnetic anisotropy (bulk-PMA) for the first time. The current-induced magnetization switching is investigated in the presence of a perpendicular, longitudinal, or transverse field. In order to rule out Joule heating effect, switching of the magnetization is also demonstrated using current pulses. It is found that the anti-damping torque correlated with spin Hall effect is very strong, and a spin Hall angle of about 0.12 is obtained. The field-like torque related with Rashba effect is negligible in this structure suggesting that the interface play a significant role in Rashba-like torque.

cond-mat.mes-hall↗

arXiv2014

Room Temperature Spin Pumping in Topological Insulator Bi2Se3

Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling and the existence of spin-textured topological surface states which could be potentially exploited for spintronics. Here, we investigate spin pumping from a metallic ferromagnet (CoFeB) into a 3D topological insulator (Bi2Se3) and demonstrate successful spin injection from CoFeB into Bi2Se3 and the direct detection of the electromotive force generated by the inverse spin Hal effect (ISHE) at room temperature. The spin pumping, driven by the magnetization dynamics of the metallic ferromagnet, introduces a spin current into the topological insulator layer, resulting in a broadening of the ferromagnetic resonance (FMR) linewidth. We find that the FMR linewidth more than quintuples, the spin mixing conductance can be as large as 3.4*10^20m^-2 and the spin Hall angle can be as large as 0.23 in the Bi2Se3 layer.

cond-mat.mes-hall↗