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Zeyuan Li

Publications and source records attributed to Zeyuan Li.

20 records · Page 2Linked to original sources

Volume-Preserving Transformers for Learning Time Series Data with Structure

Two of the many trends in neural network research of the past few years have been (i) the learning of dynamical systems, especially with recurrent neural networks such as long short-term memory networks (LSTMs) and (ii) the introduction of transformer neural networks for natural language processing (NLP) tasks. While some work has been performed on the intersection of these two trends, those efforts were largely limited to using the vanilla transformer directly without adjusting its architecture for the setting of a physical system. In this work we develop a transformer-inspired neural network and use it to learn a dynamical system. We (for the first time) change the activation function of the attention layer to imbue the transformer with structure-preserving properties to improve long-term stability. This is shown to be of great advantage when applying the neural network to learning the trajectory of a rigid body.

math.NA↗

Orientation-dependent surface radiation damage in $β$-Ga2O3 explored by multiscale atomic simulations

Ultrawide bandgap semiconductor $β$-Ga2O3 holds extensive potential for applications in high-radiation environments. One of the primary challenges in its practical application is unveiling the mechanisms of surface irradiation damage under extreme conditions. In this study, we investigate the orientation-dependent mechanisms of radiation damage on four experimentally relevant $β$-Ga2O3 surface facets, namely, (100), (010), (001), and (-201), at various temperatures. We employ a multiscale atomic simulation approach, combining machine-learning-driven molecular dynamics (ML-MD) simulations and density functional theory (DFT) calculations. The results reveal that Ga vacancies and O interstitials are the predominant defects across all four surfaces, with the formation of many antisite defects Ga_O and few O_Ga observed. Among the two Ga sites and three O sites, the vacancy found in the O2 site is dominant, while the interstitials at the Ga1 and O1 sites are more significant. Interestingly, the (010) surface exhibits the lowest defect density, owing to its more profound channeling effect leading to a broader spread of defects. The influence of temperature on surface irradiation damage of $β$-Ga2O3 should be evaluated based on the unique crystal surface characteristics. Moreover, the formation energy and defect concentration calculated by DFT corroborate the results of the MD simulations. Comprehending surface radiation damage at the atomic level is crucial for assessing the radiation tolerance and predicting the performance changes of $β$-Ga2O3-based device in high-radiation environments.

cond-mat.mtrl-sci↗