arXiv subjects

Zaizhe Zhang

Publications and source records attributed to Zaizhe Zhang.

12 recordsLinked to original sources

arXiv2026

Emergent trans-moir\'e orbitals and topology in rhombohedral graphene

The fractional quantum anomalous Hall effect (FQAHE) exhibited in fractional Chern insulators has recently been demonstrated in twisted MoTe2 and rhombohedral graphene/hBN moir\'e superlattices, promising new routes toward topological quantum computation. Central to realizing this promise is the understanding of the underlying microscopic mechanism. This, however, remains elusive in the case of rhombohedral graphene, with the crux being its two seemingly paradoxical conditions: a pronounced small-twist-angle ({\theta}) moir\'e interface, yet only when electrons are kept distant from it. Here, by scanning tunnelling microscopic imaging with both conditions fulfilled, we capture dramatic electronic structure reshaping in rhombohedral hexalayer graphene by unforeseen 'trans-moir\'e orbitals', which emerge on the other, distant side of the moir\'e interface but nevertheless enforce the moir\'e periodicity at all measured fillings. We visualize a hierarchy of spatially and energetically distinct trans-moir\'e orbitals which doped electrons must sequentially occupy--the lowest-energy orbital, expectedly responsible for the FQAHE at small fillings, carries a hollow-cage-like shape. Remarkably, these trans-moir\'e orbitals vanish at {\theta} {\gtrsim} 1{\deg}, and so do QAHE plateaus in similar devices. Simulations reveal an interaction-driven charge-redistribution mechanism which shapes the trans-moir\'e orbitals and corresponding Chern minibands. With our findings providing the missing microscopic link, the paradoxical conditions find a natural explanation: electrons are not simply kept distant from a small-{\theta} moir\'e interface; they are forced into topological trans-moir\'e orbitals, forged precisely under such conditions. Our microscopic diagnostics unlocks a wide range of possible 'synthetic' FQAHE platforms.

cond-mat.mes-hall↗

arXiv2026

Observation of a Reconstructed Chern Insulator in Twisted Bilayer MoTe2

Twisted bilayer MoTe2 is a prototypical moire material in which long-wavelength superlattices amplify electron correlations, enabling a wealth of emergent quantum phases. To date, experimental efforts have focused primarily on small twist angles (typically smaller than 4deg ), whereas the larger-angle regime-where moire bands become more dispersive and correlations are reduced-has remained largely unexplored. Here we chart the topological phase space of tMoTe2 at a relatively large twist angle of approximately 4.54deg, accessing a moderately correlated regime with enhanced bandwidth. In contrast to small-angle devices that predominantly host fractional quantum anomalous Hall or spin Hall responses, we uncover multiple Chern-insulating states with C = 1 at moire fillings v = -1, -0.53 and -1/2. Strikingly, at v = -2/3 a magnetic field induces a fractional Chern insulator accompanied by an insulator-metal transition. Our results broaden the topological phase diagram of tMoTe2 and establish large-angle moire superlattices as a versatile platform for engineering robust topological states beyond the strong-correlation limit.

cond-mat.mes-hall↗

arXiv2025

Magnetic-Field-Driven Insulator-Superconductor Transition in Rhombohedral Graphene

Recent studies of rhombohedral multilayer graphene (RMG) have revealed a variety of superconducting states that can be induced or enhanced by magnetic fields, reinforcing RMG as a powerful platform for investigating novel superconductivity. Here we report an insulator-superconductor transition driven by in-plane magnetic fields B|| in rhombohedral hexalayer graphene. The upper critical in-plane field of 2T violates the Pauli limit, and an analysis based on isospin symmetry breaking supports a spin-polarized superconductor. At in-plane B = 0, such spin-polarized superconductor transitions into an insulator, exhibiting a thermally activated gap of 0.1 meV. In addition, we observe four superconducting states in the hole-doped regime, as well as phases with orbital multiferroicity near charge neutrality point. These findings substantially enrich the phase diagram of rhombohedral graphene and provide new insight into the microscopic mechanisms of superconductivity

cond-mat.supr-con↗

arXiv2025

Entangled Moire Chern Insulator in Rhombohedral Graphene

Graphene-based moire superlattices exhibit novel quantum phenomena driven by pronounced interactions, leading to topological corrected states like orbital Chern insulators exhibiting quantum anomalous Hall effect (QAHE). Typically, intrinsic Chern insulators are stabilized at odd moir\'e fillings, as even fillings often result in valley-balanced, topologically trivial states at zero magnetic field. In our work, we report the observation of an intrinsic Chern insulator with C = 1 state at moire filling v = 2 in rhombohedral octalayer graphene (R8G)/hBN moire superlattice. Observing such Chern insulators in particular with C = 1 at v = 2 is intriguing, as each moir\'e band carries Chern number C = 1 or -1. We further demonstrate such a state can originate from the entanglement between the low-energy moire flat bands and high-energy remote bands according to the Hartree-Fock calculation. Our findings extend the known topological phase diagram of rhombohedral multilayer graphene (RMG) moire systems and establish this platform as highly promising for investigating strong electron correlations and multiband hybridized transport.

cond-mat.mes-hall↗

arXiv2025

Fractional High-Chern Insulator in Twisted Rhombohedral Graphene

The realization of fractional Chern insulators opens up the possibility of exploring fractionally charged excitations and anyonic statistics in the absence of a magnetic field. A central question is whether lattice-based systems can give rise to radically new states, distinct from those observed in traditional fractional quantum Hall systems. In this work, we investigate a new type of moir\'e flat band system composed of Bernal bilayer graphene and rhombohedral tetralayer graphene. We discover an unprecedented richness of quantum anomalous Hall insulators with Chern numbers from C = 1 to C = 7 at v = 1 and around v = 3. Remarkably, we observe an exotic fractional Chern insulator with C = 7/3 around v = 2/3 which is beyond all known fractional Chern insulators described by either the Jain sequence or current high Chern theory. Our work expands the understanding of fractionally charged excitations beyond the Landau level basis and offers a new moire platform for exploring anyons.

cond-mat.mes-hall↗

arXiv2025

Does Moire Matter? Critical Moire Dependence with Quantum Fluctuations in Graphene Based Integer and Fractional Chern Insulators

Rhombohedral multilayer graphene has emerged as a powerful platform for investigating flat-band-driven correlated phenomena, yet most aspects remain not understood. In this work, we systematically study the moire-dependent band topology in rhombohedral hexalayer graphene. For the first time we demonstrate that the moire twist angle plays a crucial role in the formation of the moire Chern insulators in rhombohedral hexalayer graphene/hexagonal boron nitride (RHG/hBN) moire superlattices. In the moire-distant regime at filling factor v = 1, only systems with a twist angle {\theta} < 1.1{\deg} exhibit an integer moire Chern insulator, while the fractional Chern insulator at v = 2/3 requires smaller twist angle to be stabilized. Our theoretical modelling, which includes quantum fluctuations and exact diagonalization results, suggests that mean-field theory, which has been widely adopted, does not explain the twist-angle dependence of the v = 1 phase diagram, and that correlation effects are crucial. Moreover, we realize two distinct stacking configurations ( /Xi=0 and /Xi=1) between graphene and hBN, and find that both cases can yield a Chern insulator at v = 1. Our experimental work upends the current mean-field paradigm, illuminates how quantum fluctuations and moir\'e effects shape the RHG/hBN phase diagram, and paves the way for future understanding and engineering of topological correlated states in rhombohedral graphene moire systems.

cond-mat.mes-hall↗

arXiv2025

Programmable Quantum Anomalous Hall Insulator in Twisted Crystalline Flatbands

The isospin flavors in condensed matters can be continuously broken, forming various symmetry-broken quantum states. In moir\'e crystals, the competition between different isospin configurations can be effectively tuned by the twist angles and staciking orders. Here we report twisted double rhombohedral-trilayer-gaphene as a new twisted crystalline flatbands system showing rich moir\'e dependent topological phenomena. In devices with small twist angles, programmable Chern insulators with Chern number C = 3 at integer moir\'e filling v = 1 have been observed. We have further revealed an exotic hidden order which can quench the Chern insulator as well as multiple first-order transitions between different symmetry-broken phases. Interestly, in the device with a slightly larger twist angle, multiple Chern insulators with C = 1 at fractional moir\'e fillings including v = 1/4, 1/3 and 1/2 have been observed, whereas the Chern insulator at v = 1 is abscent. Our study demonstrated the twisted flatbands form rhombohedral-multilayer-graphene as a new platform to study tunable high Chern insulators as well as new devices for quantum storage and computation.

cond-mat.mes-hall↗

arXiv2025

Evidence of Mott Insulator with Thermally Induced Melting Behavior in Kagome Compound Nb3Cl8

The kagome lattice provides a playground to explore novel correlated quantum states due to the presence of flat bands in its electronic structure. Recently discovered layered kagome compound Nb3Cl8 has been proposed as a Mott insulator coming from the half-filled flat band. Here we have carried out systematic transport study to uncover the evidence of Mott insulator in Nb3Cl8 thin flakes. Bipolar semiconducting property with Fermi level close to conduction band has been revealed. We have further probed the chemical potential of Nb3Cl8 by tracing the charge neutrality point of the monolayer graphene proximate to Nb3Cl8. The gap of Nb3Cl8 flakes is approximately 1.10 eV at 100 K and shows pronounced temperature dependence, decreasing substantially with increasing temperature to ~0.63 eV at 300 K. The melting behavior of the gapped state is in consistent with theoretically proposed Mott insulator in Nb3Cl8. Our work has demonstrated Nb3Cl8 as a promising platform to study strongly correlated physics at relatively high temperature.

cond-mat.str-el↗

arXiv2025

Unconventional Orbital Magnetism in Graphene-based Fractional Chern Insulators

Orbital magnetism in graphene originates from correlation-driven spontaneous valley symmetry breaking1-7. It can lead to various anomalous transport phenomena such as integer and fractional quantum anomalous Hall effects8-11. In general, the in-plane magnetic field B|| primarily couples to the spin degrees of freedom in graphene and has long been presumed to have a negligible effect on orbital magnetism due to the ultra-weak spin-orbit coupling12-18. In this work, we report multiple unconventional orbital magnetic phenomena that are highly sensitive to the B|| field in graphene/hBN superlattices hosting both integer and fractional Chern insulators (FCIs). We observed chirality-switching behaviors of the Chern insulator at moir\'e filling factor {\nu} = 1 under a finite B_par, demonstrating that both the C = +-1 states are permissible ground states at zero perpendicular magnetic field B_per. For the FCI at {\nu} = 2/3, we observed topological phase transitions between two states characterized by Hall resistivity \r{ho}xy = +-3h/2e2 under both B_per and B_par fields. In-plane B|| field can effectively suppress the FCI state at zero B_per field and enhance the FCI state with the opposite chirality, as resolved in Landau fan diagrams. Moreover, we observed rich phase transitions at 1 < {\nu} < 2, accompanied by intervalley coherence and anomalous Hall effects (AHE) that can be triggered by sweeping either B_per or B_par. Our work has unveiled new properties of orbital magnetism, providing a new knob for engineering various AHE in graphene.

cond-mat.mes-hall↗

arXiv2024

Commensurate and Incommensurate Chern Insulators in Magic-angle Bilayer Graphene

The interplay between strong electron-electron interaction and symmetry breaking can have profound influence on the topological properties of materials. In magic angle twisted bilayer graphene (MATBG), the flat band with a single SU(4) flavor associated with the spin and valley degrees of freedom gains non-zero Chern number when C2z symmetry or C2zT symmetry is broken. Electron-electron interaction can further lift the SU(4) degeneracy, leading to the Chern insulator states. Here we report a complete sequence of zero-field Chern insulators at all odd integer fillings (v = +-1, +-3) with different chirality (C = 1 or -1) in hBN aligned MATBG which structurally breaks C2z symmetry. The Chern states at hole fillings (v = -1, -3), which are firstly observed in this work, host an opposite chirality compared with the electron filling scenario. By slightly doping the v = +-3 states, we have observed new correlated insulating states at incommensurate moir\'e fillings which is highly suggested to be intrinsic Wigner crystals according to our theoretical calculations. Remarkably, we have observed prominent Streda-formula violation around v = -3 state. By doping the Chern gap at v = -3 with notable number of electrons at finite magnetic field, the Hall resistance Ryx robustly quantizes to ~ h/e2 whereas longitudinal resistance Rxx vanishes, indicating that the chemical potential is pinned within a Chern gap, forming an incommensurate Chern insulator. By providing the first experimental observation of zero-field Chern insulators in the flat valence band, our work fills up the overall topological framework of MATBG with broken C2z symmetry. Our findings also demonstrate that doped topological flat band is an ideal platform to investigate exotic incommensurate correlated topological states.

cond-mat.mes-hall↗

arXiv2024

Tunable Fractional Chern Insulators in Rhombohedral Graphene Superlattices

Fractional Chern insulators (FCIs) showing a transport effect with fractionally quantized Hall plateaus emerging under zero magnetic field, provide a radically new opportunity to engineer topological quantum electronics. By construction of topological flat band with moire engineering, intrinsic FCIs have been observed in twisted MoTe2 system and rhombohedral pentalayer graphene/hBN moire superlattices with anomalous Hall resistivity quantization number C <= 2/3 including the gapless composite Fermi-liquid state with C = 1/2. Here, we experimentally demonstrate a new system of rhombohedral hexalayer graphene (RHG)/hBN moire superlattices, which exhibit both integer and fractional quantum anomalous Hall effects with rich tunability including electric displacement field, perpendicular magnetic field and in-plane magnetic field. By tuning the electrical and magnetic fields at 0 < v < 1, we have observed a quantum phase transition showing a sign reversal of the Hall resistivity at finite magnetic fields. Surprisingly, the FCI state at v = 2/3 survives in the phase transitions, exhibiting a robust quantized Hall resistivity across both phases. Finally we have further demonstrated the indispensable role moire potential plays in the formation of the flat Chern band from a theoretical perspective. Our work has established RHG/hBN moire superlattices as a promising platform for exploring quasi-particles with fractional charge and non-Abelian anyons at zero magnetic field.

cond-mat.mes-hall↗

arXiv2024

Correlated Charge Density Wave Insulators in Chirally Twisted Triple Bilayer Graphene

Electrons residing in flat-band system can play a vital role in triggering spectacular phenomenology due to relatively large interactions and spontaneous breaking of different degeneracies. In this work we demonstrate chirally twisted triple bilayer graphene, a new moir\'e structure formed by three pieces of helically stacked Bernal bilayer graphene, as a highly tunable flat-band system. In addition to the correlated insulators showing at integer moir\'e fillings, commonly attributed to interaction induced symmetry broken isospin flavors in graphene, we observe abundant insulating states at half-integer moir\'e fillings, suggesting a longer-range interaction and the formation of charge density wave insulators which spontaneously break the moir\'e translation symmetry. With weak out-of-plane magnetic field applied, as observed half-integer filling states are enhanced and more quarter-integer filling states appear, pointing towards further quadrupling moir\'e unit cells. The insulating states at fractional fillings combined with Hartree-Fock calculations demonstrate the observation of a new type of correlated charge density wave insulators in graphene and points to a new accessible twist manner engineering correlated moir\'e electronics.

cond-mat.mes-hall↗