arXiv subjects

Yves Lassailly

Publications and source records attributed to Yves Lassailly.

6 recordsLinked to original sources

arXiv2025

Crystal field tuned spin-flip luminescence in NiPS3

Layered magnetic materials potentially hold the key to future applications based on optical control and manipulation of magnetism. NiPS3, a prototype member of this family, is antiferromagnetic below 155 K and exhibits sharp photoluminescence associated to a transition between a triplet ground state and a singlet excited state. The nature of the luminescent transition is a matter of current debate and so is an eventual fundamental link of this excitation to magnetism. Here we provide answers through experiments and calculations. We fabricate samples with metal and ligand substitutions which alter the Neel transition temperature and measure the effects of these changes on the temperature dependent photoluminescence. We perform crystal field and charge transfer multiplet calculations to explain the origin of the excitation and identify the effects of the magnetic ground state on its properties. These measurements and calculations provide a comprehensive explanation for the observed properties and a template for finding similar materials exhibiting spin-flip luminescence.

cond-mat.mtrl-sci↗

arXiv2022

Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy

Scanning tunneling electroluminescence microscopy is performed on a 3-nm-thick InGaN/GaN quantum well with x = 0.23 such that the main light emission occurs in the green. The technique is used to map the local recombination properties at a scale of ~10 nm and to correlate them with the surface topography imaged by scanning tunneling microscopy. A 500 nm x 500 nm area around a 150-nm large and 2.5-nm deep hexagonal defect is probed, revealing emission at higher energies close to the defect edges, a feature which is not visible in the macro-photoluminescence spectrum of the sample. Via a fitting of the local tunneling electroluminescence spectra, quantitative information on the fluctuations of the intensity, energy, width and phonon replica intensity of the different spectral contributions are obtained, revealing information about carrier localization in the quantum well. This procedure also indicates that carrier diffusion length on the probed part of the quantum well is approximately 40 nm.

cond-mat.mes-hall↗

arXiv2022

Evidence of localization effect on photoelectron transport induced by alloy disorder in nitride semiconductor compounds

Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield of the InGaN samples drops by more than one order of magnitude when the temperature is decreased while it remains constant on the GaN sample. This indicates a freezing of photoelectron transport in p-InGaN that we attribute to electron localization in the fluctuating potential induced by the alloy disorder. This interpretation is confirmed by the disappearence at low temperature of the peak in the photoemission spectrum that corresponds to the contribution of the photoelectrons relaxed at the bottom of the InGaN conduction band.

cond-mat.mes-hall↗

arXiv2017

Polarizers, optical bridges and Sagnac interferometers for nanoradian polarization rotation measurements

The ability to measure nanoradian polarization rotations, $θ_F$, in the photon shot noise limit is investigated for partially crossed polarizers (PCP), a static Sagnac interferometer and an optical bridge, each of which can in principal be used in this limit with near equivalent figures-of-merit (FOM). In practice a bridge to PCP/Sagnac source noise rejection ratio of $1/4θ_F^2$ enables the bridge to operate in the photon shot noise limit even at high light intensities. The superior performance of the bridge is illustrated via the measurement of a 3 nrad rotation arising from an axial magnetic field of 0.9 nT applied to a terbium gallium garnet. While the Sagnac is functionally equivalent to the PCP in terms of the FOM, unlike the PCP it is able to discriminate between rotations with different time ($T$) and parity ($P$) symmetries. The Sagnac geometry implemented here is similar to that used elsewhere to detect non-reciprocal ($\overline{T}P$) rotations like those due to the Faraday effect. Using a Jones matrix approach, novel Sagnac geometries uniquely sensitive to non-reciprocal $\overline{TP}$ (e.g. magneto-electric or magneto-chiral) rotations, as well as to reciprocal rotations (e.g. due to linear birefringence, $TP$, or to chirality, $T\overline{P}$) are proposed.

physics.optics↗

arXiv2015

A Closer Look at the Light Induced Changes in the Visco-elastic Properties of Azobenze-Containing Polymers by Statistical Nanoindentation

The mechanical properties of azobenzene-containing polymer films are statistically measured by instrumented nanoindentation experiment in the dark and under illumination in the absorption band of the azobenzene molecules, with special emphasis on the creep behavior and recoverability. We use Dispersed Red 1 azobenzene derivatives, which remain in the stable trans isomer state in the dark and form a dynamical photo-stationary state between cis and trans isomer under illumination. Light induces a higher change in the film hardness than in the elastic stiffness, revealing the occurrence of a visco-plastic behavior of the film under illumination. Creep experiments performed at a constant load show a striking dissipative effect linked to the mass flowing under polarized illumination.

cond-mat.mtrl-sci↗

arXiv2003

An atom mirror etched from a hard drive

We describe the fabrication of an atom mirror by etching of a common hard drive, and we report the observation of specular retroreflection of 11 uk cesium atoms using this mirror. The atoms were trapped and cooled above the hard drive using the mirror magneto-optical trap technique, and upon release, two full bounces were detected. The hard drive atom mirror will be a useful tool for both atom optics and quantum computation.

quant-ph↗