Yuran Shi | arXiv Science

arXiv2026

Interfacial Engineering Enabled High-Resolution Stretchable Metal-Level Conductive Lines and Transparent Conductor

As stretchable electronics advance toward higher integration density and finer feature sizes, stretchable conductors, which serve as the architectural backbone of these electronics, must be scaled down accordingly. However, achieving both high stretchability and high electrical conductivity at high resolution remains a challenge using existing conductive materials. Here, through material design and interfacial engineering, we develop a thiol-functionalized conducting polymer/gold hybrid stack that can be patterned down to 4 micrometer linewidths using standard photolithography, while maintaining high stretchability, metal-like conductivity (>40,000 S/cm), and environmental stability. Leveraging this capability, we demonstrate grid-based stretchable transparent electrodes that surpass the figure-of-merit of indium tin oxide, as well as a 1000-pixel-per-inch image interconnected with stretchable lines. This work helps to broaden the scope of next-generation functional soft electronics, including e-skins and bioelectronics.

cond-mat.mtrl-sci↗

arXiv2026

A monolithic fabrication platform for intrinsically stretchable polymer transistors and complementary circuits

Soft, stretchable organic field-effect transistors (OFETs) can provide powerful on-skin signal conditioning, but current fabrication methods are often material-specific: each new polymer semiconductor (PSC) requires a tailored process. The challenge is even greater for complementary OFET circuits, where two PSCs must be patterned sequentially, which often leads to device degradation. Here, we introduce a universal, monolithic photolithography process that enables high-yield, high-resolution stretchable complementary OFETs and circuits. This approach is enabled by a process-design framework that includes (i) a direct, photopatternable, solvent-resistant, crosslinked dielectric/semiconductor interface, (ii) broadly applicable crosslinked PSC blends that preserve high mobility, and (iii) a patterning strategy that provides simultaneous etch masking and encapsulation. Using this platform, we achieve record integration density for stretchable OTFTs (55,000 cm^-2), channel lengths down to 2 um, and low-voltage operation at 5 V. We demonstrate photopatterning across multiple PSC types and realize complementary circuits, including 3 kHz stretchable ring oscillators, the first to exceed 1 kHz and representing more than a 60-fold increase in stage switching speed over the state of the art. Finally, we demonstrate the first stretchable complementary OTFT neuron circuit, where the output frequency is modulated by the input current to mimic neuronal signal processing. This scalable approach can be readily extended to diverse high-performance stretchable materials, accelerating the development and manufacturing of skin-like electronics.

eess.SY↗