arXiv subjects

Yugui Yao

Publications and source records attributed to Yugui Yao.

At least 307 records · Page 17Linked to original sources

arXiv2011

Quantum Spin Hall Effect in Silicene

Recent years have witnessed great interest in the quantum spin Hall effect (QSHE) which is a new quantum state of matter with nontrivial topological property due to the scientific importance as a novel quantum state and the technological applications in spintronics. Taking account of Si, Ge significant importance as semiconductor material and intense interest in the realization of QSHE for spintronics, here we investigate the spin-orbit opened energy gap and the band topology in recently synthesized silicene using first-principles calculations. We demonstrate that silicene with topologically nontrivial electronic structures can realize QSHE by exploiting adiabatic continuity and direct calculation of the Z2 topological invariant. We predict that QSHE in silicene can be observed in an experimentally accessible low temperature regime with the spin-orbit band gap of 1.55 meV, much higher than that of graphene due to large spin-orbit coupling and the low-buckled structure. Furthermore, we find that the gap will increase to 2.90 meV under certain pressure strain. Finally, we also study germanium with similar low buckled stable structure, and predict that SOC opens a band gap of 23.9 meV, much higher than the liquid nitrogen temperature.

cond-mat.mtrl-sci↗

arXiv2011

Spin Polarized and Valley Helical Edge Modes in Graphene Nanoribbons

Inspired by recent progress in fabricating precisely zigzag-edged graphene nanoribbons and the observation of edge magnetism, we find that spin polarized edge modes with well-defined valley index can exist in a bulk energy gap opened by a staggered sublattice potential such as that provided by a hexagonal Boron-Nitride substrate. Our result is obtained by both tight-binding model and first principles calculations. These edge modes are helical with respect to the valley degree of freedom, and are robust against scattering, as long as the disorder potential is smooth over atomic scale, resulting from the protection of the large momentum separation of the valleys.

cond-mat.mtrl-sci↗

arXiv2010

Scattering universality classes of side jump in anomalous Hall effect

The anomalous Hall conductivity has an important extrinsic contribution known as side jump contribution, which is independent of both scattering strength and disorder density. Nevertheless, we discover that side jump has strong dependence on the spin structure of the scattering potential. We propose three universality classes of scattering for the side jump contribution, having the characters of being spin-independent, spin-conserving and spin-flip respectively. For each individual class, the side jump contribution takes a different unique value. When two or more classes of scattering are present, the value of side jump is no longer fixed but varies as a function of their relative disorder strength. As system control parameter such as temperature changes, due to the competition between different classes of disorder scattering, the side jump Hall conductivity could flow from one class dominated limit to another class dominated limit. Our result indicates that magnon scattering plays a role distinct from normal impurity scattering and phonon scattering in the anomalous Hall effect because they belong to different scattering classes.

cond-mat.mes-hall↗

arXiv2010

Density functional study of weak ferromagnetism in a thick BiCrO3 film

Very thick films of BiCrO$_3$ have been grown on a SrTiO$_3$ substrate, maintaining a tetragonal lattice up to thicknesses of 14,000Å. Assuming we can treat films of this thickness as bulk crystals, we first calculated the experimentally undetermined atomic positions within the unit cell with the measured lattice constant of the film, then relaxed the lattice constants along with the atomic positions. All the calculations result in an antiferroelectric crystal with the {\it Pnma} space group with noncollinear Bi displacements. We find G-type antiferromagnetism with a spin-orbit induced weak ferromagnetic component, however, the weak ferromagnetic component can cancel if the antiferromagnetic spins are oriented along a particular one of the three 2-fold rotation axes.

cond-mat.mtrl-sci↗

arXiv2010

Half-Heusler Topological Insulators: A First-Principle Study with the Tran-Blaha Modified Becke-Johnson Density Functional

We systematically investigate the topological band structures of half-Heusler compounds using first-principles calculations. The modified Becke-Johnson exchange potential together with local density approximation for the correlation potential (MBJLDA) has been used here to obtain accurate band inversion strength and band order. Our results show that a large number of half-Heusler compounds are candidates for three-dimensional topological insulators. The difference between band structures obtained using the local density approximation (LDA) and MBJLDA potential is also discussed.

cond-mat.mtrl-sci↗

arXiv2010

Quantum Anomalous Hall Effect in Graphene from Rashba and Exchange Effects

We investigate the possibility of realizing quantum anomalous Hall effect in graphene. We show that a bulk energy gap can be opened in the presence of both Rashba spin-orbit coupling and an exchange field. We calculate the Berry curvature distribution and find a non-zero Chern number for the valence bands and demonstrate the existence of gapless edge states. Inspired by this finding, we also study, by first principles method, a concrete example of graphene with Fe atoms adsorbed on top, obtaining the same result.

cond-mat.mtrl-sci↗

arXiv2010

Investigation of Magnetic Transport Properties by Wannier Interpolation

We present an efficient {\it ab initio} approach for the study of magnetic transport properties based on the Boltzmann equation with the Wannier interpolation scheme. Within the relaxation time approximation, band-resolved electric conductivity under a finite magnetic field is obtained and the historical motion of the electron wave packet in reciprocal space is determined. As a typical application of this method, we have calculated the electric conductivities of MgB$_2$ under finite magnetic fields. Multiband characters for the individual bands are revealed, and the field dependence of the conductivity tensor is studied systematically with the field orientated parallel and normal to the $c$-axis, respectively. The obtained historical motion is employed to simulate directly the cyclotron motion in the extremal orbit and determine the corresponding effective mass. Moreover, This approach is further exploited to calculate the Hall coefficient in the low-field limit, without the complicated computation for the second ${\mathbf k}$ derivative of the band.

cond-mat.mtrl-sci↗

arXiv2010

Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators

Using first-principles calculations within density functional theory, we explore the feasibility of converting ternary half-Heusler compounds into a new class of three-dimensional topological insulators (3DTI). We demonstrate that the electronic structure of unstrained LaPtBi as a prototype system exhibits distinct band-inversion feature. The 3DTI phase is realized by applying a uniaxial strain along the [001] direction, which opens a bandgap while preserving the inverted band order. A definitive proof of the strained LaPtBi as a 3DTI is provided by directly calculating the topological Z2 invariants in systems without inversion symmetry. We discuss the implications of the present study to other half-Heusler compounds as 3DTI, which, together with the magnetic and superconducting properties of these materials, may provide a rich platform for novel quantum phenomena.

cond-mat.mtrl-sci↗

arXiv2010

Three-Dimensional Topological Insulators in I-III-VI$_2$ and II-IV-V$_2$ Chalcopyrite Semiconductors

The recent discovery of topological insulators with exotic metallic surface states has garnered great interest in the fields of condensed matter physics and materials science. A number of spectacular quantum phenomena have been predicted when the surface states are under the influence of magnetism and superconductivity, which could open up new opportunities for technological applications in spintronics and quantum computing. To achieve this goal, material realization of topological insulators with desired physical properties is of crucial importance. Based on first-principles calculations, here we show that a large number of ternary chalcopyrite compounds of composition I-III-VI$_2$ and II-IV-V$_2$ can realize the topological insulating phase in their native states. The crystal structure of chalcopyrites is derived from the frequently used zinc-blende structure, and many of them possess a close lattice match to important mainstream semiconductors, which is essential for a smooth integration into current semiconductor technology. The diverse optical, electrical and structural properties of chalcopyrite semiconductors, and particularly their ability to host room-temperature ferromagnetism, make them appealing candidates for novel spintronic devices.

cond-mat.mtrl-sci↗

arXiv2008

Fully Band Resolved Scattering Rate in MgB2 Revealed by Nonlinear Hall Effect and Magnetoresistance Measurements

We have measured the normal state temperature dependence of the Hall effect and magnetoresistance in epitaxial MgB2 thin films with variable disorders characterized by the residual resistance ratio RRR ranging from 4.0 to 33.3. A strong nonlinearity of the Hall effect and magnetoresistance have been found in clean samples, and they decrease gradually with the increase of disorders or temperature. By fitting the data to the theoretical model based on the Boltzmann equation and ab initio calculations for a four-band system, for the first time, we derived the scattering rates of these four bands at different temperatures and magnitude of disorders. Our method provides a unique way to derive these important parameters in multiband systems.

cond-mat.supr-con↗

arXiv2008

Doping-dependent Phase Diagram of LaO{\it M}As ({\it M}=V--Cu) and Electron-type Superconductivity near Ferromagnetic Instability

By first-principles calculations, we present a doping-dependent phase diagram of LaO{\it M}As ({\it M}=V--Cu) family. It is characterized as antiferromagnetic semiconductor around LaOMnAs side and ferromagnetic metal around LaOCoAs. Both LaOFeAs and LaONiAs, where superconductivity were discovered, are located at the borderline of magnetic phases. Extensive Fermi surface analysis suggests that the observed superconductivity is of electron-type in its origin. We discuss possible pairing mechanisms in the context of competing ferromagnetic phases found in this work and the ferromagnetic spin fluctuations.

cond-mat.supr-con↗

arXiv2007

Theoretical Evidence for the Berry-Phase Mechanism of Anomalous Hall Transport: First-principles Studies on CuCr$_2$Se$_{4-x}$Br$_x$

To justify the origin of anomalous Hall effect (AHE), it is highly desirable to have the system parameters tuned continuously. By quantitative calculations, we show that the doping dependent sign reversal in CuCr$_{2}$Se$_{4-x}$Br$_{x}$, observed but not understood, is nothing but direct evidence for the Berry-Phase mechanism of AHE. The systematic calculations well explain the experiment data for the whole doping range where the impurity scattering rates is changed by several orders with Br substitution. Further sign change is also predicted, which may be tested by future experiments.

cond-mat.mes-hall↗

arXiv2007

Spin-orbit gap of graphene: First-principles calculations

Even though graphene is a low energy system consisting of the two dimensional honeycomb lattice of carbon atoms, its quasi-particle excitations are fully described by the 2+1 dimensional relativistic Dirac equation. In this paper we show that while the spin-orbit interaction in graphene is of the order of $4 meV$, it opens up a gap of the order of $10^{-3} meV$ at the Dirac points. We present the first principle calculation of the spin-orbit gap, and explain the behavior in terms of a simple tight-binding model. Our result also shows that the recently predicted quantum spin Hall effect in graphene can only occur at unrealistically low temperature.

cond-mat.mes-hall↗

arXiv2006

Berry phase effect in anomalous thermoelectric transport

We develop a theory of Berry phase effect in anomalous transport in ferromagnets driven by statistical forces such as the gradient of temperature or chemical potential. Here a charge Hall current arises from the Berry phase correction to the orbital magnetization rather than from the anomalous velocity which does not exist in the absence of a mechanical force. A finite-temperature formula for the orbital magnetization is derived, which enables us to provide an explicit expression for the off-diagonal thermoelectric conductivity, to establish the Mott relation between the anomalous Nernst and Hall effects, and to reaffirm the Onsager relations between reciprocal thermoelectric conductivities. A first-principles evaluation of our expression is carried out for the material CuCr$_2$Se$_{4-x}$Br$_x$, obtaining quantitative agreement with a recent experiment.

cond-mat.mes-hall↗

arXiv2006

Linear magnetization dependence of the intrinsic anomalous Hall effect

The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn$_5$Ge$_3$. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect, and calculated the intrinsic anomalous Hall conductivity from the Berry curvature of the Bloch states using first-principles methods. The intrinsic anomalous Hall conductivity depends linearly on the magnetization, which can be understood from the long wavelength fluctuations of the spin orientation at finite temperatures. The quantitative agreement between theory and experiment is remarkably good, not only near 0 K, but also at finite temperatures, up to about ~ 240 K (0.8 T$_C$})

cond-mat.mes-hall↗

arXiv2005

Coherent wave-packet evolution in coupled bands

We develop a formalism for treating coherent wave-packet dynamics of charge and spin carriers in degenerate and nearly degenerate bands. We consider the two-band case carefully in view of spintronics applications, where transitions between spin-split bands often occur even for relatively weak electromagnetic fields. We demonstrate that much of the semiclassical formalism developed for the single-band case can be generalized to multiple bands, and examine the nontrivial non-Abelian corrections arising from the additional degree of freedom. Along with the center of mass motion in crystal momentum and real space, one must also include a pseudo-spin to characterize the dynamics between the bands. We derive the wave packet energy up to the first order gradient correction and obtain the equations of motion for the real- and $k$-space center of the wave-packet, as well as for the pseudo-spin. These equations include the non-Abelian Berry curvature terms and a non-Abelian correction to the group velocity. As an example, we apply our formalism to describe coherent wave-packet evolution under the action of an electric field, demonstrating that it leads to electrical separation of up and down spins. A sizable separation will be observed, with a large degree of tunability, making this mechanism a practical method of generating a spin polarization. We then turn our attention to a magnetic field, where we recover Larmor precession, which cannot be obtained from a single-band point of view. In this case, the gradient energy correction can be regarded as due to a magnetic moment from the self-rotation of the wave-packet, and we calculate its value for the light holes in the spherical four-band Luttinger model.

cond-mat.other↗

arXiv2005

Electric generation of spin in crystals with reduced symmetry

We propose a simple way of evaluating the bulk spin generation of an arbitrary crystal with a known band structure in the strong spin-orbit coupling limit. We show that, in the presence of an electric field, there exists an intrinsic torque term which gives rise to a nonzero spin generation rate. Using methods similar to those of recent experiments which measure spin polarization in semiconductors, this spin generation rate should be experimentally observable. The wide applicability of this effect is emphasized by explicit consideration of a range of examples: bulk wurtzite and strained zincblende (n-GaAs) lattices, as well as quantum well heterojunction systems.

cond-mat.mes-hall↗

arXiv2005

Ab initio calculation of intrinsic spin Hall effect in semiconductors

Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs and AlAs is large $[\sim 100 (\hbar/e)(Ωcm)^{-1}]$, showing the possibility of spin Hall effect beyond the four band Luttinger Hamiltonian. The calculated orbital-angular-momentum (orbital) Hall conductivity is one order of magnitude smaller, indicating no cancellation between the spin and orbital Hall effects in bulk semiconductors. Furthermore, it is found that the spin Hall effect can be strongly manipulated by strains, and that the $ac$ spin Hall conductivity in the semiconductors is large in pure as well as doped semiconductors.

cond-mat.mtrl-sci↗