arXiv subjects

Yuanqiu Tan

Publications and source records attributed to Yuanqiu Tan.

4 recordsLinked to original sources

arXiv2026

Process-Technology Co-optimization for 2D-FETs

We present the first experimental machine learning (ML)-enabled Process-Technology Co-Optimization (PTCO) framework for optimizing 2D transition metal dichalcogenide (TMD) FET fabrication directly from statistically meaningful experimental data rather than pure simulation data. We first introduce a transition voltage metric, VTrans, to quantify the gate voltage required for off-to-on switching and reveal its direct correlation with subthreshold swing (SS), highlighting an overlooked switching characteristic that governs both off-state and on-state performance. By integrating automated metric extraction, multi-objective recipe ranking, and predictive modeling, our framework uncovers hidden process-performance correlations and predicts the performance of unexplored fabrication recipes from limited experimental data. Experimental validation shows close agreement with ML predictions, thus demonstrating the framework's ability to efficiently guide gate stack optimization through iterative experimental feedback.

cond-mat.mes-hall↗

arXiv2026

Spin Vector Control for Heisenberg-Inspired Probabilistic Computing

Probabilistic bits (p-bits) have emerged as a cornerstone of probabilistic computing, enabling energy-efficient hardware implementation for probabilistic inference and combinatorial optimization. A critical challenge in advancing this field beyond binary p-bits lies in realizing and manipulating vector spin information, essential for mapping complex energy-based models such as the Heisenberg Hamiltonian.Here, we demonstrate a spintronic platform capable of real-space vector summation by using dual ferromagnetic spin injections into a monolayer graphene channel. By electrically tuning the spin polarization through independently controlled injection currents, we achieve continuous control over the magnitude and direction of the resulting spin accumulation vector. Experimental observations, supported by theoretical vector summation models and spin-circuit simulations, reveal coherent vector interactions and angular tunability of the spin state. This approach enables direct implementation of vector-based spin logic and lays the groundwork for mapping classical Heisenberg models using stochastic low-barrier magnets. Our results establish a scalable pathway for realizing probabilistic spin circuits based on two-dimensional materials, offering new opportunities for low-power, non-Boolean computing architectures.

cond-mat.mes-hall↗

arXiv2026

Scaling Two-Dimensional Semiconductor Nanoribbons for High-Performance Electronics

As silicon transistors scale toward future technology nodes, three-dimensional architectures -- including gate-all-around (GAA) nanoribbon and complementary field-effect transistors (CFETs) -- require channel widths in the tens of nanometers to meet density targets. Monolayer transition metal dichalcogenides (TMDs), with their atomically thin bodies, are promising channel materials for these architectures, yet most TMD-based FETs remain limited to micrometer-scale widths. Here, we show that channel width scaling of monolayer MoS2 nanoribbon transistors not only preserves but also enhances device performance. Reducing the channel width from hundreds of nanometers to $\sim$30--40 nm increases the median on-current density by $\sim$42% and reduces the median subthreshold swing by $\sim$16%, with a champion device reaching 995 $\mu$A $\mu$m$^{-1}$ at a drain-to-source voltage of 1 V and an overdrive voltage of 2.5 V. We attribute these improvements to three mechanisms: minimal edge-induced disorder, enhanced gate electrostatics at ribbon edges, and more efficient side-contact injection, together reducing contact resistance from $\sim$860 $\Omega$ $\mu$m to $\sim$270 $\Omega$ $\mu$m. Extending the platform to n-type WS2 and p-type WSe2 FETs, we achieve WSe2 p-FET on-currents of 357 $\mu$A $\mu$m$^{-1}$. These findings suggest that monolayer TMD nanoribbon FETs are promising candidates for future ultra-scaled electronics.

cond-mat.mtrl-sci↗

arXiv2023

Experimental demonstration of an integrated on-chip p-bit core utilizing stochastic Magnetic Tunnel Junctions and 2D-MoS2 FETs

Probabilistic computing is a novel computing scheme that offers a more efficient approach than conventional CMOS-based logic in a variety of applications ranging from optimization to Bayesian inference, and invertible Boolean logic. The probabilistic-bit (or p-bit, the base unit of probabilistic computing) is a naturally fluctuating entity that requires tunable stochasticity; by coupling low-barrier stochastic Magnetic Tunnel Junctions (MTJs) with a transistor circuit, a compact implementation is achieved. In this work, through integrating stochastic MTJs with 2D-MoS$_{2}$ FETs, the first on-chip realization of a key p-bit building block displaying voltage-controllable stochasticity is demonstrated. In addition, supported by circuit simulations, this work provides a careful analysis of the three transistor-one magnetic tunnel junction (3T-1MTJ) p-bit design, evaluating how the characteristics of each component influence the overall p-bit output. This understanding of the interplay between the characteristics of the transistors and the MTJ is vital for the construction of a fully functioning p-bit, making the design rules presented in this article key for future experimental implementations of scaled on-chip p-bit networks.

cond-mat.mes-hall↗