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Yu-Gui Yao

Publications and source records attributed to Yu-Gui Yao.

6 recordsLinked to original sources

Observation of Kondo Effect in Rhombohedral Graphene Superlattices

Kondo effect in strongly correlated systems arises from the antiferromagnetic coupling between itinerant conduction electrons and localized magnetic moments, giving rise to a variety of exotic quantum phenomena. Two-dimensional moiré superlattice systems provide a highly tunable platform featuring topological flat bands, where Wannier orbitals are spatially confined by the periodic moiré potential and serve as localized magnetic moments, enabling the observable Kondo effect. Here we experimentally demonstrate Kondo interactions in hexalayer rhombohedral graphene moiré superlattices through magneto-transport and temperature-dependent measurements. With increasing magnetic field, the magnetoresistance exhibits an increase-decrease transition across a critical field B_c, while the Hall resistance R_xy undergoes a sign reversal near B_c. Moreover, as temperature decreases, the longitudinal resistance R_xx first increases logarithmically and then decreases following a T^2 behavior, indicating a transition to heavy fermion liquid. These behaviors can be consistently explained by the breakdown of Kondo singlets induced by either magnetic field or temperature, which liberates carriers previously bound to localized moments, thereby enhancing conductivity and altering the dominant carrier type. Furthermore, our results demonstrate that the Kondo interaction can be continuously tuned by both carrier density n and displacement electric field D, and suggest the emergence of a Kondo insulating state. Our findings provide deep insight into the Kondo effect in moiré engineered flat-band systems, paving the path for exploring exotic correlated quantum phases.

cond-mat.mes-hall

Electronic, Dielectric, and Plasmonic Properties of Two-Dimensional Electride Materials X$_2$N (X=Ca, Sr): A First-Principles Study

Based on first-principles calculations, we systematically study the electronic, dielectric, and plasmonic properties of two-dimensional (2D) electride materials X$_2$N (X=Ca, Sr). We show that both Ca$_2$N and Sr$_2$N are stable down to monolayer thickness. For thicknesses larger than 1-monolayer (1-ML), there are 2D anionic electron layers confined in the regions between the [X$_2$N]$^+$ layers. These electron layers are strongly trapped and have weak coupling between each other. As a result, for the thickness dependence of many properties such as the surface energy, work function, and dielectric function, the most dramatic change occurs when going from 1-ML to 2-ML. For both bulk and few-layer Ca$_2$N and Sr$_2$N, the in-plane and out-of-plane real components of their dielectric functions have different signs in an extended frequency range covering the near infrared, indicating their potential applications as indefinite media. We find that bulk Ca$_2$N and Sr$_2$N could support surface plasmon modes in the near infrared range. Moreover, tightly-bounded plasmon modes could exist in their few-layer structures. These modes have significantly shorter wavelengths (~few tens of nanometers) compared with that of conventional noble metal materials, suggesting their great potential for plasmonic devices with much smaller dimensions.

cond-mat.mtrl-sci

Band Structure Engineering of Multinary Chalcogenide Topological Insulators

Topological insulators (TIs) have been found in strained binary HgTe and ternary I-III-VI2 chalcopyrite compounds such as CuTlSe2 which have inverted band structures. However, the non-trivial band gaps of these existing binary and ternary TIs are limited to small values, usually around 10 meV or less. In this work, we reveal that a large non-trivial band gap requires the material having a large negative crystal field splitting $Δ_{CF}$ at top of the valence band and a moderately large negative $s-p$ band gap $E_g^{s-p}$. These parameters can be better tuned through chemical ordering in multinary compounds. Based on this understanding, we show that a series of quaternary I2-II-IV-VI4 compounds, including Cu2HgPbSe4, Cu2CdPbSe4, Ag2HgPbSe4 and Ag2CdPbTe4 are TIs, in which Ag2HgPbSe4 has the largest TI band gap of 47 meV because it combines the optimal values of $Δ_{CF}$ and $E_g^{s-p}$.

cond-mat.mtrl-sci

Low compressible noble metal carbides with rock-salt structure: ab initio total energy calculations of the elastic stability

We have systematically studied the mechanical stability of all noble metal carbides with the rock-salt structure by calculating their elastic constants within the density function theory scheme. It was found that only four carbides (RuC, PdC, AgC and PtC) are mechanically stable. In particular, we have shown that RuC, PdC, and PtC have very high bulk modulus, which has been remarkably observed by the most recent experiment for the case of PtC. From the calculated density of states, we can conclude that these compounds are metallic, like the conventional group IV and group V transition metal carbides.

cond-mat.mtrl-sci

Potential super-hard Osmium di-nitride with fluorite structure: First-principles calculations

We have performed systematic first-principles calculations on di-carbide, -nitride, -oxide and -boride of platinum and osmium with the fluorite structure. It is found that only PtN$_{2}$, OsN$_{2}$ and OsO$_{2}$ are mechanically stable. In particular OsN$_{2}$ has the highest bulk modulus of 360.7 GPa. Both the band structure and density of states show that the new phase of OsN$_{2}$ is metallic. The high bulk modulus is owing to the strong covalent bonding between Os 5\textit{d} and N 2\textit{p} states and the dense packed fluorite structure.

cond-mat.mtrl-sci

Resonant intrinsic spin Hall effect in p-type GaAs quantum well structure

We study intrinsic spin Hall effect in p-type GaAs quantum well structure described by Luttinger Hamiltonian and a Rashba spin-orbit coupling arising from the structural inversion symmetry breaking. The Rashba term induces an energy level crossing in the lowest heavy hole subband, which gives rise to a resonant spin Hall conductance. The resonance may be used to identify the intrinsic spin Hall effect in experiments.

cond-mat.mes-hall