arXiv subjects

Yi Luo

Publications and source records attributed to Yi Luo.

At least 181 records · Page 10Linked to original sources

arXiv2017

Electrically Pumped Orbital Angular Momentum (OAM) Laser at Telecom Wavelengths

Semiconductor lasers capable of generating a vortex beam with a specific orbital angular momentum (OAM) order are highly attractive for applications ranging from nanoparticle manipulation, imaging and microscopy to fibre and quantum communications. In this work, an electrically pumped OAM laser operating at telecom wavelengths is fabricated by monolithically integrating an optical vortex emitter with a distributed feedback (DFB) laser on the same InGaAsP/InP epitaxial wafer. A single-step dry etching process is adopted to complete the OAM emitter, equipped with specially designed top gratings. The vortex beam emitted by the integrated laser is captured, and its OAM mode purity characterized. The electrically pumped OAM laser eliminates the external laser required by silicon- or silicon-on-insulator (SOI)-based OAM emitters, thus demonstrating great potential for applications in communication systems and quantum domain.

physics.optics↗

arXiv2017

Asymmetric splitting of an antiferromagnetic resonance via quartic exchange interactions in multiferroic hexagonal HoMnO$_3$

The symmetric splitting of two spin-wave branches in an antiferromagnetic resonance (AFR) experiment has been an essential measurement of antiferromagnets for over half a century. In this work, circularly polarized time-domain THz spectroscopy experiments performed on the low symmetry multiferroic h-HoMnO$_3$ reveal an AFR of the Mn sublattice to split asymmetrically in applied magnetic field, with an $\approx$ 50\% difference in $g$-factors between the high and low energy branches of this excitation. The temperature dependence of the $g$-factors, including a drastic renormalization at the Ho spin ordering temperature, reveals this asymmetry to unambiguously stem from Ho-Mn interactions. Theoretical calculations demonstrate the AFR asymmetry is not explained by conventional Ho-Mn exchange mechanisms alone and are only reproduced if quartic spin interactions are also included in the spin Hamiltonian. Our results provide a paradigm for the optical study of such novel interactions in hexagonal manganites and low symmetry antiferromagnets in general.

cond-mat.str-el↗

arXiv2017

Deep Clustering and Conventional Networks for Music Separation: Stronger Together

Deep clustering is the first method to handle general audio separation scenarios with multiple sources of the same type and an arbitrary number of sources, performing impressively in speaker-independent speech separation tasks. However, little is known about its effectiveness in other challenging situations such as music source separation. Contrary to conventional networks that directly estimate the source signals, deep clustering generates an embedding for each time-frequency bin, and separates sources by clustering the bins in the embedding space. We show that deep clustering outperforms conventional networks on a singing voice separation task, in both matched and mismatched conditions, even though conventional networks have the advantage of end-to-end training for best signal approximation, presumably because its more flexible objective engenders better regularization. Since the strengths of deep clustering and conventional network architectures appear complementary, we explore combining them in a single hybrid network trained via an approach akin to multi-task learning. Remarkably, the combination significantly outperforms either of its components.

stat.ML↗

arXiv2017

Hydrogenating VO2 with protons in acid solution

Hydrogenation is an effective way to tune material property1-5. Traditional techniques for doping hydrogen atoms into solid materials are very costly due to the need for noble metal catalysis and high-temperature/pressure annealing treatment or even high energy proton implantation in vacuum condition5-8. Acid solution contains plenty of freely-wandering protons, but it is difficult to act as a proton source for doping, since the protons always cause corrosions by destroying solid lattices before residing into them. Here we achieve a facile way to hydrogenate monoclinic vanadium dioxide (VO2) with protons in acid solution by attaching suitable metal to it. Considering the Schottky contact at the metal/VO2 interface, electrons flow from metal to VO2 due to workfunction difference and simultaneously attract free protons in acid solution to penetrate, forming the hydrogens dopants inside VO2 lattice. This metal-acid treatment constitutes an electron-proton co-doping strategy, which not only protects the VO2 lattice from corrosion, but also causes pronounced insulator-to-metal transitions. In addition, the metal-acid induced hydrogen doping behavior shows a ripple effect, and it can spread contagiously up to wafer-size area (>2 inch) even triggered by a tiny metal particle attachment (~1.0mm). This will stimulate a new way of simple and cost-effective atomic doping technique for some other oxide materials.

cond-mat.mtrl-sci↗

arXiv2017

Activating spin-forbidden transitions in molecules by the highly localized plasmonic field

Optical spectroscopy has been the primary tool to study the electronic structure of molecules. However the strict spin selection rule has severely limited its ability to access states of different spin multiplicities. Here we propose a new strategy to activate spin-forbidden transitions in molecules by introducing spatially highly inhomogeneous plasmonic field. The giant enhancement of the magnetic field strength resulted from the curl of the inhomogeneous vector potential makes the transition between states of different spin multiplicities naturally feasible. The dramatic effect of the inhomogeneity of the plasmonic field on the spin and symmetry selection rules is well illustrated by first principles calculations of C60. Remarkably, the intensity of singlet-triplet transitions can even be stronger than that of singlet-singlet transitions when the plasmon spatial distribution is comparable with the molecular size. This approach offers a powerful means to completely map out all excited states of molecules and to actively control their photochemical processes. The same concept can also be applied to study nano and biological systems.

cond-mat.mes-hall↗

arXiv2017

Deep attractor network for single-microphone speaker separation

Despite the overwhelming success of deep learning in various speech processing tasks, the problem of separating simultaneous speakers in a mixture remains challenging. Two major difficulties in such systems are the arbitrary source permutation and unknown number of sources in the mixture. We propose a novel deep learning framework for single channel speech separation by creating attractor points in high dimensional embedding space of the acoustic signals which pull together the time-frequency bins corresponding to each source. Attractor points in this study are created by finding the centroids of the sources in the embedding space, which are subsequently used to determine the similarity of each bin in the mixture to each source. The network is then trained to minimize the reconstruction error of each source by optimizing the embeddings. The proposed model is different from prior works in that it implements an end-to-end training, and it does not depend on the number of sources in the mixture. Two strategies are explored in the test time, K-means and fixed attractor points, where the latter requires no post-processing and can be implemented in real-time. We evaluated our system on Wall Street Journal dataset and show 5.49\% improvement over the previous state-of-the-art methods.

cs.SD↗

arXiv2016

Broadband frequency comb generation in aluminum nitride-on-sapphire microresonators

Development of chip-scale optical frequency comb with the coverage from ultra-violet (UV) to mid-infrared (MIR) wavelength is of great significance. To expand the comb spectrum into the challenging UV region, a material platform with high UV transparency is crucial. In this paper, crystalline aluminum nitride (AlN)-onsapphire film is demonstrated for efficient Kerr frequency comb generation. Near-infrared (NIR) comb with nearly octave-spanning coverage and low parametric threshold is achieved in continuous-wave pumped high-quality-factor AlN microring resonators. The competition between stimulated Raman scattering (SRS) and hyperparametric oscillation is investigated, along with broadband comb generation via Raman-assisted four-wave mixing (FWM). Thanks to its wide bandgap, excellent crystalline quality as well as intrinsic quadratic and cubic susceptibilities, AlN-on-sapphire platform should be appealing for integrated nonlinear optics from MIR to UV region.

physics.optics↗

arXiv2016

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

In metal organic vapor phase epitaxy of GaN, the growth mode is sensitive to reactor temperature. In this study, V-pit-shaped GaN has been grown on normal c-plane cone-patterned sapphire substrate by decreasing the growth temperature of high-temperature-GaN to around 950 oC, which leads to the 3-dimensional growth of GaN. The so-called "WM" well describes the shape that the bottom of GaN V-pit is just right over the top of sapphire cone, and the regular arrangement of V-pits follows the patterns of sapphire substrate strictly. Two types of semipolar facets (1101) and (1122) expose on sidewalls of V-pits. Furthermore, by raising the growth temperature to 1000 oC, the growth mode of GaN can be transferred to 2-demonsional growth. Accordingly, the size of V-pits becomes smaller and the area of c-plane GaN becomes larger, while the total thickness of GaN keeps almost unchanged during this process. As long as the 2-demonsional growth lasts, the V-pits will disappear and only flat c-plane GaN remains. This means the area ratio of c-plane and semipolar plane GaN can be controlled by the duration time of 2-demonsional growth.

cond-mat.mtrl-sci↗

arXiv2016

InGaN/GaN Multi-Quantum-Well and Light-Emitting Diode Based on V-pit-Shaped GaN Grown on Patterned Sapphire Substrate

V-pit-defects in GaN-based light-emitting diodes induced by dislocations are considered beneficial to electroluminescence because they relax the strain in InGaN quantum wells and also enhance the hole lateral injection through sidewall of V-pits. In this paper, regularly arranged V-pits are formed on c-plane GaN grown by metal organic vapor phase epitaxy on conventional c-plane cone-patterned sapphire substrates. The size of V-pits and area of flat GaN can be adjusted by changing growth temperature. Five pairs of InGaN/GaN multi-quantumwell and also a light-emitting diode structure are grown on this V-pit-shaped GaN. Two peaks around 410 nm and 450 nm appearing in both photoluminescence and cathodeluminescence spectra are from the semipolar InGaN/GaN multi-quantum-well on sidewalls of V-pits and cplane InGaN/GaN multi-quantum-well, respectively. In addition, dense bright spots can be observed on the surface of light-emitting diode when it works under small injection current, which are believed owing to the enhanced hole injection around V-pits.

cond-mat.mes-hall↗

arXiv2016

Understanding different efficiency droop behaviors in InGaN-based near-UV, blue and green light-emitting diodes through differential carrier lifetime measurements

Efficiency droop effect under high injection in GaN-based light emitting diodes (LEDs) strongly depends on wavelength, which is still not well understood. In this paper, through differential carrier lifetime measurements on commercialized near-UV, blue, and green LEDs, their different efficiency droop behaviors are attributed to different carrier lifetimes, which are prolonged as wavelength increases. This relationship between carrier lifetime and indium composition of InGaN quantum well is believed owing to the polarization-induced quantum confinement Stark effect. Long carrier lifetime not only increases the probability of carrier leakage, but also results in high carrier concentration in quantum well. In other words, under the same current density, the carrier concentration in active region in near-UV LED is the lowest while that in green one is the highest. If considering the efficiency droop depending on carrier concentration, the behaviors of LEDs with different wavelengths do not show any abnormality. The reason why the efficiency droop becomes more serious under lower temperature can be also explained by this model as well. Based on this result, the possible solutions to conquer efficiency droop are discussed. It seems that decreasing the carrier lifetime is a fundamental approach to solve the problem.

cond-mat.mtrl-sci↗

arXiv2016

Continuous-wave Raman Lasing in Aluminum Nitride Microresonators

We report the first investigation on continuous-wave Raman lasing in high-quality-factor aluminum nitride (AlN) microring resonators. Although wurtzite AlN is known to exhibit six Raman-active phonons, single-mode Raman lasing with low threshold and high slope efficiency is demonstrated. Selective excitation of A$_1^\mathrm{TO}$ and E$_2^\mathrm{high}$ phonons with Raman shifts of $\sim$612 and 660 cm$^{-1}$ is observed by adjusting the polarization of the pump light. A theoretical analysis of Raman scattering efficiency within ${c}$-plane (0001) of AlN is carried out to help account for the observed lasing behavior. Bidirectional lasing is experimentally confirmed as a result of symmetric Raman gain in micro-scale waveguides. Furthermore, second-order Raman lasing with unparalleled output power of $\sim$11.3 mW is obtained, which offers the capability to yield higher order Raman lasers for mid-infrared applications.

physics.optics↗

arXiv2016

A PMT-like high gain avalanche photodiode based on GaN/AlN periodical stacked structure

Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric field is thermalized, and the multiplication efficiencies of electron and hole are low and close. In order to achieve high gain, the device should work under breakdown bias, where carrier multiplication proceeds bi-directionally to form a positive feedback multiplication circle. However, breakdown is hard to control, in practice, APDs should work under Geiger mode as a compromise between sustainable detection and high gain. The complexity of system seriously restricts the application. Here, we demonstrate an avalanche photodiode holding high gain without breakdown, which means no quenching circuit is needed for sustainable detection. The device is based on a GaN/AlN periodically-stacked-structure (PSS), wherein electron holds much higher efficiency than hole to draw energy from the electric field, and avalanche happens uni-directionally with high efficiency. and a recorded high gain (10^4) tested under constant bias is obtained in a prototype device, wherein the stable gain can be determined by the periodicity of the GaN/AlN PSS. This work not only brings a new light into avalanche multiplication mechanism, but also paves a technological path with high commercial value to realize highly sensitive avalanche devices working under constant bias like PMT.

physics.ins-det↗

arXiv2015

Significant contributions of Albrecht's $A$ term to non-resonant Raman scattering processes

The Raman intensity can be well described by the famous Albrecht equation that consists of A and B terms. It is well known that the contribution from Albrecht's A term can be neglected without loss of accuracy for far off-resonant Raman scattering processes. However, as demonstrated in this study, we have found that this widely accepted long-standing assumption fails drastically for totally symmetric vibration modes of molecules in general off-resonant Raman scattering. Perturbed first principles calculations for water molecule show that strong constructive interference between the A and B terms occurs for the Raman intensity of the symmetric O-H stretching mode, which can account for about 40% of the total intensity. Meanwhile, a minor destructive interference is found for the angle bending mode. The state to state mapping between the Albrecht's theory and the perturbation theory allows us to verify the accuracy of the widely employed perturbation method for the dynamic/resonant Raman intensities. The model calculations rationalized from water molecule with the bending mode show that the perturbation method is a good approximation only when the absolute energy difference between the first excited state and the incident light is more than five times of the vibrational energy in ground state.

physics.optics↗

arXiv2015

Raman Images of a Single Molecule in a Highly Confined Plasmonic Field

Under the local plasmonic excitation, the Raman images of a single molecule can now reach sub-nanometer resolution. We report here a theoretical description of the interaction between a molecule and a highly confined plasmonic field. It is shown that when the spatial distribution of the plasmonic field is comparable with the size of the molecule, the optical transition matrix of the molecule becomes to be dependent on the position and the spatial distribution of the plasmonic field, resulting in spatially resolved Raman image of a molecule. It is found that the resonant Raman image reflects the electronic transition density of the molecule. In combination with the first principles calculations, the simulated Raman image of a porphyrin derivative adsorbed on the silver surface nicely reproduces its experimental counterpart. The present theory provides the basic framework for describing linear and nonlinear responses of molecules under the highly confined plasmonic field.

cond-mat.mes-hall↗

arXiv2015

Coherent Resonances Observed in the Dissociative Electron Attachments to Carbon Monoxide

Succeeding our previous finding about coherent interference of the resonant states of CO^- formed by the low-energy electron attachment [Phys. Rev. A 88, 012708 (2013)], here we provide more evidences of the coherent interference, in particular, we find the state configuration change in the interference with the increase of electron attachment energy by measuring the completely backward distributions of the O^- fragment ion of the temporary CO^- in an energy range 11.3-12.6 eV. Therefore, different pure states, namely, coherent resonances, can be formed when the close-lying resonant states are coherently superposed by a broad-band electron pulse.

physics.atm-clus↗

arXiv2014

Degrees-of-Freedom Regions for $K$-User MISO Time-Correlated Broadcast Channel

In this paper, we study the achievable degrees-of-freedom (DoF) regions of the $K$-user multiple-input-single-output (MISO) time correlated broadcast channel (BC). The time correlation induces knowledge of the current channel state information at transmitter (CSIT) with an estimation error $P^{-α}$, where $P$ is the signal-to-noise ratio (SNR). We consider the following two scenarios: $(i)$ $K$-user with $K$-antenna base station (BS) and $(ii)$ $3$-user with $2$-antenna BS. In case of symmetric DoF tuples, where all the users obtain the same DoF, we derive the total DoF equal to $\frac{K(1-α)}{1+\frac{1}{2}+\cdots+\frac{1}{K}}+Kα$ for the first scenario and $\frac{3+α}{2}$ for the second one. In particular, we provide the achievability schemes for these two DoF tuples. Nevertheless, we also consider the asymmetric case where one of the users is guaranteed {\it one} DoF, and provide the achievability scheme. Notably, the consistency of the proposed DoF regions with an already published outer bound , as well as with the Maddah-Ali-Tse (MAT), which assumes only perfect delayed CSIT, and the ZF beamforming schemes (perfect current CSIT) consents to the optimality of the proposed achievability schemes.

cs.IT↗

arXiv2014

Hybrid Interface States and Spin Polarization at Ferromagnetic Metal-Organic Heterojunctions: Interface Engineering for Efficient Spin Injection in Organic Spintronics

Ferromagnetic metal-organic semiconductor (FM-OSC) hybrid interfaces have shown to play an important role for spin injection in organic spintronics. Here, 11,11,12,12-tetracyanonaptho-2,6-quinodimethane (TNAP) is introduced as an interfacial layer in Co-OSCs heterojunction with an aim to tune the spin injection. The Co/TNAP interface is investigated by use of X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS), near edge X-ray absorption fine structure (NEXAFS) and X-ray magnetic circular dichroism (XMCD). Hybrid interface states (HIS) are observed at Co/TNAP interface resulting from chemical interaction between Co and TNAP. The energy level alignment at Co/TNAP/OSCs interface is also obtained, and a reduction of the hole injection barrier is demonstrated. XMCD results confirm sizeable spin polarization at the Co/TNAP hybrid interface.

cond-mat.mtrl-sci↗

arXiv2013

From microscopic theory to macroscopic theory: a systematic study on static modeling for liquid crystals

In this paper, we propose a systematic way of liquid crystal modeling to build connection between microscopic theory and macroscopic theory. A new Q-tensor theory based on Onsager's molecular theory which leads to liquid crystals with certain shape has been proposed. Making uniaxial assumption, we can recover the Oseen-Frank theory from the derived $Q$-tensor theory, and the Oseen-Frank model coefficients can be examined. In addition, the smectic-A phase can also be characterized by the derived macroscopic model.

math.AP↗