arXiv subjects

Yaping Dan

Publications and source records attributed to Yaping Dan.

At least 19 recordsLinked to original sources

arXiv2025

Quench rate dependence of center formation in Er implanted Si

Er implanted Si (Er:Si) is a promising candidate for scalable planar quantum memory (QM) applications. Er has a preference to coordinate with O impurities, and multiple types of Er center are typically formed after a post implant anneal. Float zone Si was implanted with 1018 cm-3 Er and separate samples were annealed using a rapid quench annealing technique at 950 degC for 10 min with quench rates of 5, 23, 46, 93, 185 and 400 degC/s. The evolution of photoluminescence (PL) peaks and their associated Er centers was tracked as a function of quench rate. Across all samples, five distinct Er centers were identified. Two centers, one with mixed Si and O coordination and one with Si-only coordination, exhibited fully resolved crystal-field splitting of the 4I15/2 ground state together with 2 to 3 hot lines from the 4I13/2 excited state; fitting of crystal-field parameters for both was consistent with C2v symmetry. The mixed Si and O coordinated center was suppressed at quench rates above 185 degC/s, while the Si-only coordinated center was progressively enhanced with increasing quench rate up to the maximum of 400 degC/s. These results demonstrate that rapid quench annealing has the potential to selectively stabilize a single, Si-coordinated Er center in Er:Si, which is required for QM applications.

physics.app-ph↗

arXiv2025

High-efficiency silicon LED with ultra-wideband emission from visible to infrared at room temperature

The primary challenge in silicon photonics is achieving efficient luminescence in the communication band, crucial for its large-scale application. Despite significant efforts, silicon light sources still suffer from low efficiency and limited emission wavelengths. We addressed this by achieving broadband luminescence from 600-1650 nm through femtosecond laser annealing of 220nm standard SOI, resulting in an external quantum efficiency exceeding 0.26% and an output optical power density greater than 20 W/cm2, several orders of magnitude higher than other silicon-based LEDs in performance. The broadband LED has potential applications in optical inspection, gas sensing, optical coherence tomography, optical communication, and more.

physics.optics↗

arXiv2025

Photon emission gain in Er doped Si light emitting diodes by impact excitation

This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer from low efficiency due to mismatched energy transfer between exciton recombination and Er excitation. Here, we propose a reverse-biased Si PN junction diode where ballistically accelerated electrons induce inelastic collisions with Er ions, enabling tunable excitation via electric field modulation. Theoretical modeling reveals that photon emission gain arises from multiple impact excitations by a single electron traversing the electroluminescence region, with the gain value approximating the ratio of emission region width to electron mean free path, i.e., G = Lex/l. Experimental results show an internal quantum efficiency (IQE) of 1.84% at 78 K, representing a 20-fold enhancement over room-temperature performance. This work provides a critical foundation for on-chip integration of silicon-based communication-band lasers and quantum light sources.

physics.optics↗

arXiv2024

Defects in graphite engineered by ion implantation for the self-assembly of gold nanoparticles

Defect engineering in two-dimensional (2D) materials is essential for advancing applications such as gas sensing, single-atom catalysis, and guided nanoparticle self-assembly, enabling the creation of materials with tailored functionalities. This study investigates ion implantation effects on highly ordered pyrolytic graphite (HOPG) surfaces, using scanning tunneling microscopy (STM) and density functional theory (DFT) simulations to identify distinct defect structures. High-energy heavy ions cause inelastic scattering, increasing surface damage, while gold atoms deposited onto defect sites preferentially form atomic clusters. Through focused ion beam techniques, spatially distributed defects were engineered, guiding the self-assembly of nanoparticles. This research highlights the precision of ion irradiation for modifying HOPG surfaces, with significant implications for catalysis, nanotechnology, and the development of functional materials with controlled nanoscale properties.

cond-mat.mtrl-sci↗

arXiv2024

Reproducible Monolayer MoS2 Devices Free of Resist Contamination by Gold Mask Lithography

Atomically thin MoS2 is a promising material for field-effect transistors (FETs) and electronic devices. However, traditional photolithographic processes introduce surface contamination to 2D materials, leading to poor electrical contacts when metals are deposited. In this work, we present a novel fabrication method using gold as a mask for patterning and etching, which protects 2D materials from contamination in the metal contact region. This technique enabled the fabrication of monolayer MoS2 transistors with clean gold contacts. Additionally, we achieved MoS2 devices with Ohmic contacts, mass-produced traditional lithography and gold mask lithography devices (100 of each), with the latter having a much higher current statistical variance than the former, which demonstrated the effectiveness of this method for contamination-free 2D transistors and potential applications in integrated circuits

cond-mat.mtrl-sci↗

arXiv2024

GaAs doped by self-assembled molecular monolayers

Self-assembled molecular monolayer doping remains as a research focus for its nature of being conformal, nondestructive, and self-limiting. Herein, we demonstrate a sulfur monolayer doping in GaAs, facilitated by (NH4)2Sx solution. The Van der Pauw technique, secondary-ion mass spectroscopy, and low-temperature Hall effect measurements show that the sulfur dopants concentration and electron activation rate are 4*10^20 cm-3 and 77.6%, respectively. The donor energy level of sulfur-doped GaAs is located 68 meV below the conduction band. Based on this process, a p-n junction was successfully fabricated on highly doped p-type GaAs substrate.

cond-mat.mtrl-sci↗

arXiv2024

Rapid quench annealing of Er implanted Si for quantum networking applications

Erbium implanted silicon (Er:Si) is a promising platform for quantum networking applications, but a major obstacle is the formation of multiple Er centres. We show that the previously identified cubic centre (Er-C) has C2v or lower symmetry. Using crystal field analysis of Er-C and other Er centres, and by comparison with extended X-ray absorption fine structure (EXAFS) measurements, we show that Er centres can be arranged in a sequence, ranging from entirely Si coordinated, through mixed Si and oxygen (O) coordination, to entirely O coordinated. G-factors calculated from our crystal field fitting closely match those determined by Zeeman splitting and electron paramagnetic resonance (EPR) measurements. We co-implanted Si with Er and O (each to a concentration of 1019 cm-3). By increasing the quenching rate of the subsequent thermal anneal from ~100 {\deg}C/s to ~1000 {\deg}C/s, we change the dominant optically active centre, formed from Er2O3 clusters to the less energetically favourable Er-C centre with mixed Si and O coordination. Temperature dependent photoluminescence (PL) shows that Er2O3 clusters and Er-C centres have an O-related defect state at ~200 and 90 meV above the 4I13/2 Er manifold, respectively. PL lifetime measurements show that the Er2O3 clusters and Er-C centres fall into two or three classes, characterised by different non-radiative PL decay rates. Our high quench rate annealing process could facilitate the formation of a single, optically active Er centre, which is preferable for quantum networking applications of Er:Si.

physics.app-ph↗

arXiv2024

High Performance MoS2 Phototransistors Photogated by PN Junction

Photodetectors based on two-dimensional (2D) atomically thin semiconductors suffer from low light absorption, limiting their potential for practical applications. In this work, we demonstrate a high-performance MoS2 phototransistors by integrating few-layer MoS2 on a PN junction formed in a silicon (Si) substrate. The photovoltage created in the PN junction under light illumination electrically gates the MoS2 channel, creating a strong photoresponse in MoS2. We present an analytical model for the photoresponse of our device and show that it is in good agreement with measured experimental photocurrent in MoS2 and photovoltage in the Si PN junction. This device structure separates light absorption and electrical response functions, which provides us an opportunity to design new types of photodetectors. For example, incorporating ferroelectric materials into the gate structure can produce a negative capacitance that boosts gate voltage, enabling low power, high sensitivity phototransistor; this, combined with separating light absorption and electrical functions, enables advanced high-performance photodetectors.

cond-mat.mes-hall↗

arXiv2024

Analytical photoresponses of Schottky contact MoS2 phototransistors

High-gain photodetectors based on two-dimensional (2D) semiconductors, in particular those in photoconductive mode, have been extensively investigated in the past decade. However, the classical photoconductive theory was derived on two misplaced assumptions. In this work, we established an explicit analytical device model for Schottky contact MoS2 phototransistors that fits well with experimental data. From the fitting results, we found that the Richardson constant of the MoS2 Schottky contact is temperature dependent, indicating that the Schottky contacts for the 2D material is best described by the mixed thermionic emission and diffusion model. Based on this device model, we further established an analytical photoresponse for the few-layer MoS2 phototransistors, from which we found the voltage distribution on the two Schottky contacts and the channel, and extracted the minority carrier recombination lifetimes. The lifetimes are comparable with the values found from transient photoluminescence measurements, which therefore validates our analytical photoresponses for Schottky contact 2D semiconducting phototransistors.

cond-mat.mes-hall↗

arXiv2024

Analytical photoresponses of gated nanowire photoconductors

Low-dimensional photoconductors have extraordinarily high photoresponse and gain, which can be modulated by gate voltages as shown in literature. However, the physics of gate modulation remains elusive. In this work, we investigated the physics of gate modulation in silicon nanowire photoconductors with the analytical photoresponse equations. It was found that the impact of gate voltage varies vastly for nanowires with different size. For the wide nanowires that cannot be pinched off by high gate voltage, we found that the photoresponses are enhanced by at least one order of magnitude due to the gate-induced electric passivation. For narrow nanowires that starts with a pinched-off channel, the gate voltage has no electric passivation effect but increases the potential barrier between source and drain, resulting in a decrease in dark and photo current. For the nanowires with an intermediate size, the channel is continuous but can be pinched off by a high gate voltage. The photoresponsivity and photodetectivity is maximized during the transition from the continuous channel to the pinched-off one. This work provides important insights on how to design high-performance photoconductors.

physics.app-ph↗

arXiv2024

Probing the band splitting near the $\Gamma$ point in the van der Waals magnetic semiconductor CrSBr

This study investigates the electronic band structure of Chromium Sulfur Bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent conduction-band states and two different valence-band states. The analysis of the PL data robustly unveils energy splittings, bandgaps and excitonic transitions across different thicknesses of CrSBr, ranging from monolayer to bulk. Temperature-dependent PL measurements elucidate the stability of the band splitting below the N\'eel temperature, suggesting that magnons coupled with excitons are responsible for the symmetry breaking and brightening of the transitions from the secondary conduction band minimum (CBM2) to the global valence band maximum (VBM1). Collectively, these results not only reveal band splitting in both the conduction and valence bands, but also point to an intricate interplay between the optical, electronic and magnetic properties of antiferromagnetic two-dimensional van der Waals crystals.

cond-mat.mes-hall↗

arXiv2024

Near-infrared and Mid-infrared Light Emission of Boron-doped Crystalline Silicon

The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an enticing strategy to transform highly inefficient silicon into a luminescent material. However, the emission at telecommunication wavelength suffers from the strong thermal quenching effect, resulting in low efficiency at room temperature. Here, we applied a new deep cooling process to address this issue. Interestingly, we find that electrons and holes recombine through defects emitting two photons, one in near infrared (NIR, 1.3~1.6 {\mu}m) and the other in mid-infrared band (MIR, around 3.5 {\mu}m). The PL intensity at NIR increases by three folds when the temperature increases from 77 K to 300K. Furthermore, the NIR light emission of reverse biased silicon diodes was significantly enhanced compared to forward bias, emitting the maximum output power of 42 nW at 60 mA. The results offer new opportunities for the development of IR light sources in integrated circuits.

physics.optics↗

arXiv2024

Analytical impact excitation of Er/O/B co-doped Si light emitting diodes

Er doped Si light emitting diodes may find important applications in the generation and storage of quantum information. These diodes exhibit an emission efficiency two orders of magnitude higher at reverse bias than forward bias due to impact excitation. However, physics of impact excitation in these devices remains largely unexplored. In this work, we fabricated an Er/O/B co-doped Si light emitting diode which exhibits a strong electro-luminescence by the impact excitation of electrons inelastically colliding the Er ions. An analytical impact excitation theory was established to predict the electroluminescence intensity and internal quantum efficiency which fit well with the experimental data. From the fittings, we find that the excitable Er ions reach a record concentration of 1.9 x 10^19 cm-3 and up to 45% of them are in excitation state by impact excitation. This work has important implications for developing efficient classical and quantum light sources based on rare earth elements.

cond-mat.mtrl-sci↗

arXiv2023

Strong Exciton-Phonon Coupling as a Fingerprint of Magnetic Ordering in van der Waals Layered CrSBr

The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits pronounced coupling between its optical, electronic, and magnetic properties. As an example, exciton dynamics can be significantly influenced by lattice vibrations through exciton-phonon coupling. Using low-temperature photoluminescence spectroscopy, we demonstrate the effective coupling between excitons and phonons in nanometer-thick CrSBr. By careful analysis, we identify that the satellite peaks predominantly arise from the interaction between the exciton and an optical phonon with a frequency of 118 cm-1 (~14.6 meV) due to the out-of-plane vibration of Br atoms. Power-dependent and temperature-dependent photoluminescence measurements support exciton-phonon coupling and indicate a coupling between magnetic and optical properties, suggesting the possibility of carrier localization in the material. The presence of strong coupling between the exciton and the lattice may have important implications for the design of light-matter interactions in magnetic semiconductors and provides new insights into the exciton dynamics in CrSBr. This highlights the potential for exploiting exciton-phonon coupling to control the optical properties of layered antiferromagnetic materials.

cond-mat.mtrl-sci↗

arXiv2021

Far-Field Super-Resolution Imaging By Nonlinear Excited Evanescent Waves

Abbe's resolution limit, one of the best-known physical limitations, poses a great challenge for any wave systems in imaging, wave transport, and dynamics. Originally formulated in linear optics, this Abbe's limit can be broken using nonlinear optical interactions. Here we extend the Abbe theory into a nonlinear regime and experimentally demonstrate a far-field, label-free, and scan-free super-resolution imaging technique based on nonlinear four-wave mixing to retrieve near-field scattered evanescent waves, achieving sub-wavelength resolution of $\lambda/15.6$. This method paves the way for application in biomedical imaging, semiconductor metrology, and photolithography.

physics.optics↗

arXiv2020

Stimulated emission at 1.54 $\mu$m from Erbium/Oxygen-doped silicon-based light emitting diodes

Silicon-based light sources including light-emitting diodes (LEDs) and laser diodes (LDs) for information transmission are urgently needed for developing monolithic integrated silicon photonics. Silicon doped by ion implantation with erbium ions (Er$^{3+}$) is considered a promising approach, but suffers from an extremely low quantum efficiency. Here we report an electrically pumped superlinear emission at 1.54 $\mu$m from Er/O-doped silicon planar LEDs, which are produced by applying a new deep cooling process. Stimulated emission at room temperature is realized with a low threshold current of ~6 mA (~0.8 A/cm2). Time-resolved photoluminescence and photocurrent results disclose the complex carrier transfer dynamics from the silicon to Er3+ by relaxing electrons from the indirect conduction band of the silicon. This picture differs from the frequently-assumed energy transfer by electron-hole pair recombination of the silicon host. Moreover, the amplified emission from the LEDs is likely due to a quasi-continuous Er/O-related donor band created by the deep cooling technique. This work paves a way for fabricating superluminescent diodes or efficient LDs at communication wavelengths based on rare-earth doped silicon.

physics.optics↗

arXiv2020

Explicit gain equations for hybrid graphene-quantum-dot photodetectors

Graphene is an attractive material for broadband photodetection but suffers from weak light absorption. Coating graphene with quantum dots can significantly enhance light absorption and create extraordinarily high photo gain. This high gain is often explained by the classical gain theory which is unfortunately an implicit function and may even be questionable. In this work, we managed to derive explicit gain equations for hybrid graphene-quantum-dot photodetectors. Due to the work function mismatch, lead sulfide (PbS) quantum dots coated on graphene will form a surface depletion region near the interface of quantum dots and graphene. Light illumination narrows down the surface depletion region, creating a photovoltage that gates the graphene. As a result, high photo gain in graphene is observed. The explicit gain equations are derived from the theoretical gate transfer characteristics of graphene and the correlation of the photovoltage with the light illumination intensity. The derived explicit gain equations fit well with the experimental data, from which physical parameters are extracted.

cond-mat.mes-hall↗

arXiv2020

Explicit Gain Equations for Single Crystalline Photoconductors

Photoconductors based on semiconducting thin films, nanowires and 2-dimensional atomic layers have been extensively investigated. But there is no explicit photogain equation that allows for fitting and designing photoresponses of these devices. In this work, we managed to derive explicit photogain equations for silicon nanowire photoconductors based on experimental observations. The silicon nanowires were fabricated by patterning the device layer of silicon-on-insulator wafers by standard lithography that were doped with boron. It was found that the as-fabricated silicon nanowires have a surface depletion region ~ 32 nm wide. This depletion region protects charge carriers in the channel from surface scatterings, resulting in the independence of charge carrier mobilities on nanowire size. It is consistent with our Hall effect measurements but in contradiction with the accepted conclusion in the past decades that charge carrier mobilities become smaller for smaller nanowires due to surface scatterings. Under light illumination, the depletion region logarithmically narrows down and the nanowire channel widens accordingly. Photo Hall effect measurements show that the nanowire photoconductance is not contributed by the increase of carrier concentrations but the widening of the nanowire channel. As a result, a nanowire photoconductor can be modeled as a resistor in connection with floating Schottky junctions near the nanowire surfaces. Based on the photoresponses of a Schottky junction, we derived explicit photogain equations for nanowire photoconductors that are a function of light intensity and device physical parameters. The gain equations fit well with the experimental data, from which we extracted the minority carrier lifetimes that are consistent with the minority carrier lifetime in nanowires reported in literature.

cond-mat.mes-hall↗