arXiv subjects

Xiyou Peng

Publications and source records attributed to Xiyou Peng.

3 recordsLinked to original sources

arXiv2026

Constraining the Superconducting Gap of Monolayer FeSe/SrTiO$_3$ via Statistical Analysis and Tip-Height-Dependent Tunneling Spectroscopy

Monolayer FeSe grown on SrTiO$_3$ (001) exemplifies interface-enhanced superconductivity, exhibiting a transition temperature nearly ten times that of bulk FeSe. Yet, its tunneling spectra lack clearly identifiable superconducting coherence peaks, preventing an unambiguous determination of the gap magnitude. Here, we use ultralow-temperature scanning tunneling spectroscopy as a function of temperature, tip-sample separation, and lateral position to disentangle tunneling contributions by statistical analysis. Decay rates extracted by regression of tip-height-dependent spectroscopy reveal three energy regimes: Andreev-reflection-dominated tunneling below 6 meV, mixed Andreev and quasiparticle tunneling between 6 and 13 meV, and predominantly quasiparticle tunneling above 13 meV. Spatially resolved spectroscopy and correlation analysis further reveal that the tunneling conductance is predominantly localized near defects below 6 meV but becomes spatially extended at higher energies. Together, these results constrain the superconducting gap to lie between 6 and 13 meV. Our findings establish statistical analysis of spectroscopy as a powerful approach to constraining superconducting gap structures when complex spectral features prevent the unambiguous identification of coherence peaks.

cond-mat.supr-con↗

arXiv2018

Atomic and electronic structure of doped Si(111)(2root3x2root3)R30(degrees)-Sn interfaces

The hole doped Si(111)(2root3x2root3)R30(degrees)-Sn interface exhibits a symmetry-breaking insulator-insulator transition below 100 K that appears to be triggered by electron tunneling into the empty surface-state bands. No such transition is seen in electron-doped systems. To elucidate the nature and driving force of this phenomenon, the structure of the interface must be resolved. Here we report on an extensive experimental and theoretical study, including scanning tunneling microscopy and spectroscopy (STM/STS), dynamical low-energy electron diffraction (LEED) analysis, and density functional theory (DFT) calculations, to elucidate the structure of this interface. We consider six different structure models, three of which have been proposed before, and conclude that only two of them can account for the majority of experimental data. One of them is the model according to Tornevik et al. [C. Tornevik et al., Phys. Rev. B 44, 13144 (1991)] with a total Sn coverage of 14/12 monolayers (ML). The other is the 'revised trimer model' with a total Sn coverage of 13/12 ML, introduced in this work. These two models are very difficult to discriminate on the basis of DFT or LEED alone, but STS data clearly point toward the Törnevik model as the most viable candidate among the models considered here. The STS data also provide additional insights regarding the electron-injection-driven phase transformation as well as the critical role of valence band holes in this process. Similar processes may occur at other metal/semiconductor interfaces, provided they are non-metallic and can be doped. This could open up a new pathway toward the creation of novel surface phases with potentially very interesting and desirable electronic properties.

cond-mat.mes-hall↗

arXiv2015

Monolayer Phosphorene-Metal Interfaces

Recently, phosphorene electronic and optoelectronic prototype devices have been fabricated with various metal electrodes. We systematically explore for the first time the contact properties of monolayer (ML) phosphorene with a series of commonly used metals (Al, Ag. Cu, Au, Cr, Ni, Ti, and Pd) via both ab initio electronic structure calculations and more reliable quantum transport simulations. Strong interactions are found between all the checked metals, with the energy band structure of ML phosphorene destroyed. In terms of the quantum transport simulations, ML phosphorene forms a n-type Schottky contact with Au, Cu, Cr, Al, and Ag electrodes, with electron Schottky barrier heights (SBHs) of 0.30, 0.34, 0.37, 0.51, and 0.52 eV, respectively, and p-type Schottky contact with Ti, Ni, and Pd electrodes, with hole SBHs of 0.30, 0.26, and 0.16 eV, respectively. These results are in good agreement with available experimental data. Our findings not only provide an insight into the ML phosphorene-metal interfaces but also help in ML phosphorene based device design.

cond-mat.mes-hall↗