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Xiaoqing Pan

Publications and source records attributed to Xiaoqing Pan.

At least 19 recordsLinked to original sources
arXiv2026

Trade-off between interface morphology and compositional homogeneity in AlGaAs/GaAs quantum wells revealed by multislice electron ptychography

AlGaAs/GaAs asymmetric coupled quantum wells (ACQWs) are promising platforms for enhanced second-order optical nonlinearities, with their performance strongly influenced by the structural quality of heterostructures. Flat interfaces, together with high compositional homogeneity, are generally desirable for optimizing device functionality. Here we show that sharp and flat AlGaAs/GaAs interface morphology dominates the second harmonic generation (SHG) response in AlGaAs/GaAs ACQWs, even when significant compositional fluctuations in Al/Ga occupancy are present within the AlGaAs layers. Using multislice electron ptychography, we resolve the three-dimensional (3D) interface morphology and compositional distribution in AlGaAs/GaAs ACQWs under distinct growth interruptions. Longer growth interruptions sharpen and flatten the AlGaAs/GaAs interfaces, but at the same time cause stronger compositional fluctuations in the AlGaAs layers. These findings clarify how growth interruption tunes quantum wells structures and provide direct guidance for quantum wells design in next-generation optoelectronic devices.

cond-mat.mtrl-sci↗
arXiv2026

Subwavelength Coherent Scaling of High-Order Nonlinear Light Generation in Bulk Monolayer MoS2 Thin Films

Monolayer transition metal dichalcogenides (e.g., MoS2) exhibit exceptionally large optical nonlinearities for high-order nonlinear light generation (NLG), yet their inherent atomic thickness fundamentally limits light-matter interactions and thus conversion efficiency. Here, we overcome this intrinsic trade-off using a solution-processed bulk monolayer MoS2 (BM-MoS2) architecture composed of electronically decoupled MoS2 monolayers separated by organic interlayers. This layered superstructure preserves the exceptional intrinsic nonlinear susceptibility of monolayer MoS2 while enabling scalable interaction length. In the subwavelength regime, the NLG scales nearly quadratically with layer number (N1.8), confirming the constructive buildup of nonlinear fields across stacked monolayers. As a result, a 100-nm-thick BM-MoS2 thin film exhibits colossal high-order NLG, including four-wave mixing and high-harmonic generation. The generated nonlinear beam is directly visible to the naked eye and exhibits broad spectral tunability spanning approximately 1000 nm in the mid-IR, enabling mid-IR-to-visible upconversion spectroscopy for resolving molecular vibrational fingerprints. By uniting monolayer-scale nonlinear susceptibility with bulk interaction length and coherent field buildup, BM-MoS2 establishes a thin-film platform for ultra-compact and substrate-agnostic nonlinear photonic systems beyond the constraints of conventional single crystals.

physics.optics↗
arXiv2026

Hybrid BaTiO3/TiO2 Metasurface for Efficient Gigahertz-Speed Free-Space Electro-Optic Modulation

Free-space electro-optic modulators are key to emerging photonic systems, yet their performance remains limited by trade-offs between modulation efficiency, bandwidth, and device aperture. Here we report a hybrid BaTiO3 (BTO)/TiO2 metasurface for large-aperture, efficient, gigahertz-speed free-space electro-optic modulation. Combining scalable BTO film growth by radio-frequency magnetron sputtering with mature TiO2 nanofabrication, we pattern the metasurface in TiO2 on an unetched BTO layer. The resulting devices support guided-mode resonances with quality factors exceeding 1300 and an optical confinement factor of ~0.8, while the continuous BTO layer makes efficient use of the applied voltage, together maximizing the overlap between the optical and driving fields within the BTO. A device with a 0.3 mm x 0.3 mm metasurface achieves a transmittance modulation efficiency of ~0.020 per volt and a -3 dB electro-optic bandwidth of ~0.8 GHz, with an effective Pockels coefficient of ~151 pm/V for the BTO. This establishes a scalable route to high-performance free-space electro-optic modulators for LiDAR, free-space optical communication, and reconfigurable optical computing.

physics.optics↗
arXiv2026

Imaging nanoscale photocarrier traps in solar water-splitting catalysts

Defects trap photocarriers and hinder solar water splitting. The nanoscale photocarrier transport, trapping, and recombination mechanisms are usually inferred from ensemble-averaged measurements and remain elusive. Because an individual high-performing nanoparticle photocatalyst may outperform the ensemble average, design rules that would otherwise enhance catalytic efficiency remain unclear. Here, we introduce photomodulated electron energy-loss spectroscopy (EELS) in an optically coupled scanning transmission electron microscope (STEM) to map photocarrier localization. Using rhodium-doped strontium titanate (SrTiO3:Rh) solar water-splitting nanoparticles, we directly image the carrier densities concentrated at oxygen-vacancy surface trap states. This is achieved by separating photothermal heating from photocarrier populations through experimental and computational analyses of low-loss spectra. Photomodulated STEM-EELS enables angstrom-scale imaging of defect-induced photocarrier traps and their impact on photocatalytic efficiency.

physics.chem-ph↗
arXiv2026

Quantum-Well-Metasurface to Maximize Nonlinear Polarization

Nonlinear frequency conversion unlocks technologies ranging from telecommunications to quantum computation; however, weak nonlinearities and architectures that resist miniaturization currently limit devices. Here, we combine a bandstructure-engineered GaAs/AlGaAs heterostructure with a high quality factor dielectric metasurface to simultaneously tailor the intrinsic nonlinear susceptibility and optimize the electromagnetic field within the heterostructure. By engineering a resonant interband transition, we realize a large second-order nonlinear tensor element, 1.6 nm/V at 1.57 um wavelength. We then make it free-space-accessible and boost the effective nonlinearity to ~ 14 nm/V using a metasurface patterned on the material. Our proof-of-concept experiment establishes that interband transition engineering and metasurfaces accessing otherwise unusable nonlinear tensor elements enable giant effective nonlinearities in the near-infrared to visible spectrum. This addresses material and device-level constraints in nonlinear photonics, providing a scalable route to compact, efficient devices.

physics.optics↗
arXiv2026

Epitaxial CeO2 Films as a Host for Quantum Applications

In highly purified host, the coherence of quantum emitters is ultimately limited by hyperfine interactions between the emitter and lattice nuclei possessing non-zero nuclear magnetic moments. This limitation can only be mitigated through isotopic purification. In this work, we investigate CeO2 as a host composed entirely of nuclei with zero nuclear moment. High-quality CeO2 thin films were grown by PLD and doped with Tm and Er ions. Structural characterization using X-ray diffraction, atomic force microscopy, and ion channeling confirms single-crystalline, atomically smooth films with dopants substitutionally incorporated at Ce lattice sites. Photoluminescence lifetime measurements show significantly longer lifetimes for Er-doped CeO2 (2.9 - 5.3 ms) compared with Tm-doped films (14 - 68 μs). Moreover, the Er-doped PLD films exhibit longer lifetimes at ~1% dopant concentration than previously reported for MBE-grown films. Density functional theory calculations reveal a substantial overlap between unoccupied O 2p and Tm 4f states near the valence band maximum, whereas Er 4f states remain well isolated. This electronic interaction likely introduces non-radiative recombination pathways in Tm-doped CeO2, explaining the reduced lifetimes. These findings highlight the importance of selecting appropriate dopant-host combinations and optimized growth conditions to minimize non-radiative channels for quantum applications.

quant-ph↗
arXiv2026

High-efficiency Pt$_{75}$Au$_{25}$-based spintronic terahertz emitters

Spintronic terahertz emitters (STEs) generate broadband THz radiation via ultrafast spin-charge conversion in magnetic multilayers, offering spectral coverage beyond that of photoconductive antennas and nonlinear optical crystals. Here, we demonstrate a new type of STE based on PtxAu100-x alloy that achieves significantly higher THz output power than widely used Pt-based devices. Alloy composition and layer thickness tuning yield Pt75Au25 as the optimal alloy providing a 30 % increase in THz power in CoFeB/Pt75Au25 bilayer STEs compared to the optimized CoFeB/Pt reference STE. In W/CoFeB/Pt$_{75}$Au$_{25}$ trilayer STEs, we observe a 10 % higher THz power than in the optimized W/CoFeB/Pt trilayer. The STE efficiency is reduced upon annealing for both Pt$_{75}$Au$_{25}$- and Pt-based STEs due to formation of interfacial alloys. Our results establish Pt$_{75}$Au$_{25}$ as a promising platform for high-performance STEs, where its giant spin Hall effect significantly enhances efficiency over conventional Pt-based devices.

cond-mat.mtrl-sci↗
arXiv2026

Enhanced Interband Optical Nonlinearities from Coupled Quantum Wells

The recent, rapid advances in nonlinear chipscale nanophotonics in the visible and near-infrared have been largely driven by manipulating the local dielectric environment proximate to decades-old workhorse bulk nonlinear optical materials, rather than increasing the inherent strength of their nonlinear response. While proposed decades ago, we demonstrate the first experimental realization of a new class of designer nonlinear materials that leverage the interband optical transition in asymmetric structures to provide strong second order susceptibility, $χ^{(2)}$. Using simple AlGaAs/GaAs coupled quantum wells operating in the near-infrared as a prototype, we observed strong second harmonic generation enhancement of 1550 nm to 775 nm over bulk controls. Extracted $χ^{(2)}$ values were as high as 2750 pm/V, which is $>$7x that of bulk GaAs. Furthermore, measured susceptibilities agreed well with quantum mechanical calculations of $χ^{(2)}$ using layer profiles extracted from electron microscopy. Growth interruptions were employed to improve interfacial abruptness in response to electron microscopy characterization, resulting in increased $χ^{(2)}$ toward the simulation predictions for ideal heterointerfaces. More complex layer designs showed predicted $χ^{(2)}$ up to 7 nm/V. Such materials are anticipated to find myriad applications, including entangled photon generation at telecommunications wavelengths for chipscale quantum information processing.

physics.optics↗
arXiv2026

Atomic-scale tunable phonon transport at tailored grain boundaries and Their Impact on Thermal Conductivity

Grain boundaries (GBs) strongly influence thermal transport in crystalline solids by disrupting lattice periodicity and scattering phonons. Due to the atomic-level disorder and structural complexity, a fundamental understanding of how specific GB geometries regulate nanoscale phonon behavior and macroscopic thermal conductivity has remained elusive. Here, using emerging atomic-resolution vibrational spectroscopy, we directly correlate GB structure, defect-specific vibrational states, and thermal transport in bicrystal strontium titanate with controlled tilt and twist angles. The phonon characterizations and thermal conductivity data reveal two distinct regimes, where low-angle tilt GBs (2deg, 6deg, 10deg) substantially modulate phonon populations and mode frequencies, resulting in pronounced changes in thermal conductivity, whereas high-angle tilt GBs (22deg, 36deg) exhibit weak conductivity variation due to saturated structural disorder and scattering. In contrast, twist GBs introduce periodic defect motifs that only locally tailor phonon transport. Our results suggest tilt and twist angles as complementary knobs for coarse and fine control of phonon propagation and cross-GB thermal transport, providing a predictive framework for thermal engineering in materials.

cond-mat.mes-hall↗
arXiv2026

Grain boundaries amplify local chemical ordering in complex concentrated alloys

Local chemical ordering strongly influences the behavior of complex concentrated alloys, yet its characterization remains challenging due to the nanoscale dimensions and scattered spatial distribution of the ordered domains. Here, we study chemical ordering near grain boundaries, demonstrating they can act as microstructural anchor points that amplify chemical order and drive the formation of compositional nanopatterns. Atomistic simulations reveal the development of composition waves with ordering vectors normal to the boundary plane in two distinct material systems, CrCoNi and NbMoTaW. These waves manifest as periodic enrichment-depletion patterns that reflect the underlying chemical ordering tendencies of each system, but with amplified contrast that extends several nanometers into the grain interior before gradually decaying. By examining multiple grain boundary orientations and alloys, we show that both the interfacial segregation profile and the crystallographic terminating plane govern the extent and character of this amplification. This interplay between boundary-dictated directional ordering and the diffuse, untemplated chemical domain evolution within the grain advances our understanding of interface-mediated ordering phenomena and suggests new opportunities for experimentally detecting local chemical order in complex concentrated alloys.

cond-mat.mtrl-sci↗
arXiv2024

Divergent Evolution of Slip Banding in Alloys

Metallic materials under high stress often exhibit deformation localization, manifesting as slip banding. Over seven decades ago, Frank and Read introduced the well-known model of dislocation multiplication at a source, explaining slip band formation. Here, we reveal two distinct types of slip bands (confined and extended) in alloys through multi-scale testing and modeling from microscopic to atomic scales. The confined slip band, characterized by a thin glide zone, arises from the conventional process of repetitive full dislocation emissions at Frank-Read source. Contrary to the classical model, the extended band stems from slip-induced deactivation of dislocation sources, followed by consequent generation of new sources on adjacent planes, leading to rapid band thickening. Our findings provide critical insights into atomic-scale collective dislocation motion and microscopic deformation instability in advanced structural materials, marking a pivotal advancement in our fundamental understanding of deformation dynamics.

cond-mat.mtrl-sci↗
arXiv2024

Emergent Moiré fringes in direct-grown quasicrystal

Quasicrystals represent a category of rarely structured solids that challenge traditional periodicity in crystal materials. Recent advancements in the synthesis of two-dimensional (2D) van der Waals materials have paved the way for exploring the unique physical properties of these systems. Here, we report on the synthesis of 2D quasicrystals featuring 30° alternating twist angles between multiple graphene layers, using chemical vapor deposition (CVD). Strikingly, we observed periodic Moiré patterns in the quasicrystal, a finding that has not been previously reported in traditional alloy-based quasicrystals. The Moiré periodicity, varying with the parity of the constituent layers, aligns with the theoretical predictions that suggest a stress cancellation mechanism in force. The emergence of Moiré fringes is attributed to the spontaneous mismatched lattice constant in the oriented graphene layers, proving the existence of atomic relaxation. This phenomenon, which has been largely understudied in graphene systems with large twist angles, has now been validated through our use of scanning transmission electron microscopy (STEM). Our CVD-grown Moiré quasicrystal provides an ideal platform for exploring the unusual physical properties that arise from Moiré periodicity within quasicrystals.

cond-mat.mtrl-sci↗
arXiv2024

Neural Network Kinetics for Exploring Diffusion Multiplicity and Chemical Ordering in Compositionally Complex Materials

Diffusion involving atom transport from one location to another governs many important processes and behaviors such as precipitation and phase nucleation. Local chemical complexity in compositionally complex alloys poses challenges for modeling atomic diffusion and the resulting formation of chemically ordered structures. Here, we introduce a neural network kinetics (NNK) scheme that predicts and simulates diffusion-induced chemical and structural evolution in complex concentrated chemical environments. The framework is grounded on efficient on-lattice structure and chemistry representation combined with neural networks, enabling precise prediction of all path-dependent migration barriers and individual atom jumps. Using this method, we study the temperature-dependent local chemical ordering in a refractory Nb-Mo-Ta alloy and reveal a critical temperature at which the B2 order reaches a maximum. Our atomic jump randomness map exhibits the highest diffusion heterogeneity (multiplicity) in the vicinity of this characteristic temperature, which is closely related to chemical ordering and B2 structure formation. The scalable NNK framework provides a promising new avenue to exploring diffusion-related properties in the vast compositional space within which extraordinary properties are hidden.

cond-mat.dis-nn↗
arXiv2024

Frustrated metastable-to-equilibrium grain boundary structural transition in NbMoTaW due to segregation and chemical complexity

Grain boundary structural transitions can lead to significant changes in the properties and performance of materials. In multi-principal element alloys, understanding these transitions becomes complex due to phenomena such as local chemical ordering and multi-component segregation. Using atomistic simulations, we explore a metastable-to-equilibrium grain boundary structural transition in NbMoTaW. The transition, characterized by structural disordering and reduced free volume, shows high sensitivity to its local chemical environment. Most notably, the transition temperature range of the alloy is more than twice that of a pure metal. Differences in composition between coexisting metastable and equilibrium structures highlight the change in local site availability due to structural relaxation. Further examination of grain boundaries with fixed chemical states at varying temperatures reveals that the amount of segregation significantly influences the onset temperature yet has minimal effect on the transition width. These insights underscore the profound effects of chemical complexity and ordering on grain boundary transitions in complex concentrated alloys, marking a meaningful advancement in our understanding of grain boundary behavior at the atomic level.

cond-mat.mtrl-sci↗
arXiv2024

Inelastic electron scattering at large angles: the phonon polariton contribution

We explore the inelastic electron scattering in SrTiO3, PbTiO3, and SiC in their phonon energy range, challenging the assumption that phonon polaritons are excluded at large angles in high-resolution transmission electron energy-loss spectroscopy. We demonstrate that through multiple scattering, the electron beam can excite both phonons and phonon polaritons, and the relative proportion of each varies depending on the structure factor and scattering angle. Integrating dielectric theory, density functional theory, and multi-slice simulations, we provide a comprehensive framework for understanding these interactions in materials with polar optical phonons.

cond-mat.mtrl-sci↗
arXiv2023

Real-Space Visualization of Frequency-Dependent Anisotropy of Atomic Vibrations

The underlying dielectric properties of materials, intertwined with intriguing phenomena such as topological polariton modes and anisotropic thermal conductivities, stem from the anisotropy in atomic vibrations. Conventionally, X-ray diffraction techniques have been employed to estimate thermal ellipsoids of distinct elements, albeit lacking the desired spatial and energy resolutions. Here we introduce a novel approach utilizing the dark-field monochromated electron energy-loss spectroscopy for momentum-selective vibrational spectroscopy, enabling the cartographic delineation of variations of phonon polarization vectors. By applying this technique to centrosymmetric cubic-phase strontium titanate, we successfully discern two types of oxygen atoms exhibiting contrasting vibrational anisotropies below and above 60 meV due to their frequency-linked thermal ellipsoids. This method establishes a new pathway to visualize phonon eigenvectors at specific crystalline sites for diverse elements, thus delving into uncharted realms of dielectric, optical, and thermal property investigations with unprecedented spatial resolutions.

cond-mat.mtrl-sci↗
arXiv2023

Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials

Confining materials to two-dimensional forms changes the behavior of electrons and enables new devices. However, most materials are challenging to produce as uniform thin crystals. Here, we present a new synthesis approach where crystals are grown in a nanoscale mold defined by atomically-flat van der Waals (vdW) materials. By heating and compressing bismuth in a vdW mold made of hexagonal boron nitride (hBN), we grow ultraflat bismuth crystals less than 10 nanometers thick. Due to quantum confinement, the bismuth bulk states are gapped, isolating intrinsic Rashba surface states for transport studies. The vdW-molded bismuth shows exceptional electronic transport, enabling the observation of Shubnikov-de Haas quantum oscillations originating from the (111) surface state Landau levels, which have eluded previous studies. By measuring the gate-dependent magnetoresistance, we observe multi-carrier quantum oscillations and Landau level splitting, with features originating from both the top and bottom surfaces. Our vdW-mold growth technique establishes a platform for electronic studies and control of bismuth's Rashba surface states and topological boundary modes. Beyond bismuth, the vdW-molding approach provides a low-cost way to synthesize ultrathin crystals and directly integrate them into a vdW heterostructure.

cond-mat.mes-hall↗
arXiv2023

Elucidating Dynamic Conductive State Changes in Amorphous Lithium Lanthanum Titanate for Resistive Switching Devices

Exploration of novel resistive switching materials attracts attention to replace conventional Si-based transistors and to achieve neuromorphic computing that can surpass the limit of the current Von-Neumann computing for the time of Internet of Things (IoT). Materials priorly used to serve in batteries have demonstrated metal-insulator transitions upon an electrical biasing due to resulting compositional change. This property is desirable for future resistive switching devices. Amorphous lithium lanthanum titanate (a-LLTO) was originally developed as a solid-state electrolyte with relatively high lithium ionic conductivity and low electronic conductivity among oxide-type solid electrolytes. However, it has been suggested that electric conductivity of a-LLTO changes depending on oxygen content. In this work, the investigation of switching behavior of a-LLTO was conducted by employing a range of voltage sweep techniques, ultimately establishing a stable and optimal operating condition within the voltage window of -3.5 V to 3.5 V. This voltage range effectively balances the desirable trait of a substantial resistance change by three orders of magnitude with the imperative avoidance of LLTO decomposition. This switching behavior is also confirmed at nanodevice of Ni/LLTO/Ni through in-situ biasing inside focused-ion beam/scanning electron microscope (FIB-SEM). Experiment and computation with different LLTO composition shows that LLTO has two distinct conductivity states due to Ti reduction. The distribution of these two states is discussed using simplified binary model, implying the conductive filament growth during low resistance state. Consequently, our study deepens understanding of LLTO electronic properties and encourages the interdisciplinary application of battery materials for resistive switching devices.

physics.app-ph↗