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Xiaoming Xie

Publications and source records attributed to Xiaoming Xie.

At least 19 recordsLinked to original sources

Water induced bandgap engineering in nanoribbons of hexagonal boron nitride

Different from hexagonal boron nitride (hBN) sheets, the bandgap of hBN nanoribbons (BNNRs) can be changed by spatial/electrostatic confinement. It has been predicted that a transverse electric field can narrow the bandgap and even cause an insulator-metal transition in BNNRs. However, experimentally introducing an overhigh electric field across the BNNR remains challenging. Here, we theoretically and experimentally demonstrate that water adsorption greatly reduces bandgap of zigzag oriented BNNRs (zBNNRs). Ab initio calculations show that water adsorbed beside the BNNR induces a transverse equivalent electric field of over 2 V/nm thereby reducing its bandgap. Field effect transistors were successfully fabricated from zBNNRs with different widths. The conductance of zBNNRs with adsorbates of water could be tuned over 3 orders in magnitude via electrical field modulation at room temperature. Furthermore, photocurrent response measurements were taken to determine the optical bandgap in zBNNR. Wider zBNNRs exhibit a bandgap down to 1.17 eV. This study yields fundamental insights in new routes toward realizing electronic/optoelectronic devices and circuits based on hexagonal boron nitride.

cond-mat.mtrl-sci

Light Manipulation via Tunable Collective Quantum States in Waveguide-Coupled Bragg and Anti-Bragg Superatoms

A many-body quantum system which consists of collective quantum states, such as superradiant and subradiant states, behaves as a multi-level superatom in light-matter interaction. In this work, we experimentally study one-dimensional superatoms in waveguide quantum electrodynamics with a periodic array of superconducting artificial atoms. We engineer the periodic atomic array with two distinct nearest-neighbor spacings, i.e., $d$=$\lambda_0/2$ and $d$=$\lambda_0/4$, which correspond to Bragg and anti-Bragg scattering conditions, respectively. The system consists of eight atoms arranged to maintain these specific interatomic distances. By controlling atomic frequencies, we modify Bragg and anti-Bragg superatoms, resulting in distinctly different quantum optical phenomena, such as collectively induced transparency and a broad photonic bandgap. Moreover, due to strong waveguide-atom couplings in superconducting quantum circuits, efficient light manipulations are realized in small-size systems. Our work demonstrates tunable optical properties of Bragg and anti-Bragg superatoms, as well as their potential applications in quantum devices.

quant-ph

Quasiparticle Dynamics in Superconducting Quantum-Classical Hybrid Circuits

Single flux quantum (SFQ) circuitry is a promising candidate for a scalable and integratable cryogenic quantum control system. However, the operation of SFQ circuits introduces non-equilibrium quasiparticles (QPs), which are a significant source of qubit decoherence. In this study, we investigate QP behavior in a superconducting quantum-classical hybrid chip that comprises an SFQ circuit and a qubit circuit. By monitoring qubit relaxation time, we explore the dynamics of SFQ-circuit-induced QPs. Our findings reveal that the QP density near the qubit reaches its peak after several microseconds of SFQ circuit operation, which corresponds to the phonon-mediated propagation time of QPs in the hybrid circuits. This suggests that phonon-mediated propagation dominates the spreading of QPs in the hybrid circuits. Our results lay the foundation to suppress QP poisoning in quantum-classical hybrid systems.

quant-ph

Superconducting nanowire diode

Semiconducting diode with nonreciprocal transport effect underlies the cornerstone of contemporary integrated circuits (ICs) technology. Due to isotropic superconducting properties and the lack of breaking of inversion symmetry for conventional s-wave superconductors, such a superconducting peer is absent. Recently, a series of superconducting structures, including superconducting superlattice and quantum-material-based superconducting Josephson junction, have exhibited a superconducting diode effect in terms of polarity-dependent critical current. However, due to complex structures, these composite systems are not able to construct large-scale integrated superconducting circuits. Here, we demonstrated the minimal superconducting electric component-superconducting nanowire-based diode with a nonreciprocal transport effect under a perpendicular magnetic field, in which the superconducting to normal metallic phase transition relies on the polarity and amplitude of the bias current. Our nanowire diodes can be reliably operated nearly at all temperatures below the critical temperature, and the rectification efficiency at 2 K can be more than 24%. Moreover, the superconducting nanowire diode is able to rectify both square wave and sine wave signals without any distortion. Combining the superconducting nanowire-based diodes and transistors, superconducting nanowires hold the possibility to construct novel low-dissipation superconducting ICs.

cond-mat.supr-con

Minimizing the programming power of phase change memory by using graphene nanoribbon edge-contact

Nonvolatile phase change random access memory (PCRAM) is regarded as one of promising candidates for emerging mass storage in the era of Big Data. However, relatively high programming energy hurdles the further reduction of power consumption in PCRAM. Utilizing narrow edge-contact of graphene can effectively reduce the active volume of phase change material in each cell, and therefore realize low-power operation. Here, we demonstrate that a write energy can be reduced to about ~53.7 fJ in a cell with ~3 nm-wide graphene nanoribbon (GNR) as edge-contact, whose cross-sectional area is only ~1 nm2. It is found that the cycle endurance exhibits an obvious dependence on the bias polarity in the cell with structure asymmetry. If a positive bias was applied to graphene electrode, the endurance can be extended at least one order longer than the case with reversal of polarity. The work represents a great technological advance for the low power PCRAM and could benefit for in-memory computing in future.

cond-mat.mes-hall

Graphene nanoribbons for quantum electronics

Graphene nanoribbons (GNRs) are a family of one-dimensional (1D) materials carved from graphene lattice. GNRs possess high mobility and current carrying capability, sizable bandgap, and versatile electronic properties tailored by the orientations and open edge structures. These unique properties make GNRs promising candidates for prospective electronics applications including nano-sized field-effect transistors (FETs), spintronic devices, and quantum information processing. To fully exploit the potential of GNRs, fundamental understanding of structure-property relationship, precise control of atomic structures and scalable production are the main challenges. In the last several years, significant progress has been made toward atomically precise bottom-up synthesis of GNRs and heterojunctions that provide an ideal platform for functional molecular devices, as well as successful production of semiconducting GNR arrays on insulating substrates potentially useful for large-scale digital circuits. With further development, GNRs can be envisioned as a competitive candidate material in future quantum information sciences (QIS). In this Perspective, we review recent progress in GNR research and identify key challenges and new directions likely to develop in the near future.

cond-mat.mes-hall

Small Signal Analysis of SQUID Direct Readout Schemes

To better understand the working principles of Superconducting Quantum Interference Device (SQUID) direct readout schemes, which work in different bias and amplifier modes with different internal feedback schemes, we present the complete circuit analyses on SQUID small-signal model. SQUID bias and amplifier circuits are analyzed using SQUID Thevenin equivalent circuit, and the general equivalent circuit of SQUID with different internal feedback schemes is derived and analyzed with a trans-impedance amplifier model. Transfer characteristics and noise performances of different direct readout schemes are analyzed and experimentally characterized. It is shown that amplifier noise suppression is only dependent on SQUID flux-to-voltage transfer coefficient and is irrelevant to the configuration of bias and amplifier; SQUID with an internal feedback scheme improves the transfer coefficient with voltage feedback and regulates the dynamic resistance with current feedback.

physics.ins-det

Detecting single infrared photons toward optimal system detection efficiency

Superconducting nanowire single-photon detector (SNSPD) with near-unity system efficiency is a key enabling, but still elusive technology for numerous quantum fundamental theory verifications and quantum information applications. The key challenge is to have both a near-unity photon-response probability and absorption efficiency simultaneously for the meandered nanowire with a finite filling ratio, which is more crucial for NbN than other superconducting materials (e.g., WSi) with lower transition temperatures. Here, we overcome the above challenge and produce NbN SNSPDs with a record system efficiency by replacing a single-layer nanowire with twin-layer nanowires on a dielectric mirror. The detector at 0.8 K shows a maximal system detection efficiency (SDE) of 98% at 1590 nm and a system efficiency of over 95% in the wavelength range of 1530-1630 nm. Moreover, the detector at 2.1K demonstrates a maximal SDE of 95% at 1550 nm using a compacted two-stage cryocooler. This type of detector also shows the robustness against various parameters, such as the geometrical size of the nanowire, and the spectral bandwidth, enabling a high yield of 73% (36%) with an SDE of >80% (90%) at 2.1K for 45 detectors fabricated in the same run. These SNSPDs made of twin-layer nanowires are of important practical significance for batch production.

cond-mat.supr-con

Towards Chirality Control of Graphene Nanoribbons Embedded in Hexagonal Boron Nitride

The integrated inplane growth of two dimensional materials with similar lattices, but distinct electrical properties, could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge specific GNR in the lattice of hBN still remains an enormous challenge for present approaches. Here we developed a two step growth method and successfully achieved sub 5 nm wide zigzag and armchair GNRs embedded in hBN, respectively. Further transport measurements reveal that the sub 7 nm wide zigzag GNRs exhibit openings of the band gap inversely proportional to their width, while narrow armchair GNRs exhibit some fluctuation in the bandgap width relationship.This integrated lateral growth of edge specific GNRs in hBN brings semiconducting building blocks to atomically thin layer, and will provide a promising route to achieve intricate nanoscale electrical circuits on high quality insulating hBN substrates.

cond-mat.mes-hall

Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition

Recently, Bi2O2Se is discovered as a promising two-dimensional (2D) semiconductor for next generation electronics, due to its moderate bandgap size, high electron mobility and pronounced ambient stability. Meanwhile, it has been predicted that high quality Bi2O2Se-related heterostructures may possess exotic physical phenomena, such as piezoelectricity and topological superconductivity. Herein, we report the first successful heteroepitaxial growth of Bi2O2Se films on SrTiO3 substrates via pulsed laser deposition (PLD) method. Films obtained under optimal conditions show an epitaxial growth with the c axis perpendicular to the film surface and the a and b axes parallel to the substrate. The growth mode transition to three dimensional (3D) island from quasi-2D layer of the heteroepitaxial Bi2O2Se films on SrTiO3 (001) substrates is observed as prolonging deposition time of films. The maximum value of electron mobility reaches 160 cm2/V-1s-1 at room temperature in a 70nm-thick film. The thickness dependent mobility provides evidence that interface-scattering is likely to be the limiting factor for the relatively low electron mobility at low temperature, implying that the interface engineering as an effective method to tune the low temperature electron mobility. Our work suggests the epitaxial Bi2O2Se films grown by PLD are promising for both fundamental study and practical applications.

cond-mat.mtrl-sci

Multiple gaps revealed by low temperature specific heat in the 1111-type CaFe_{0.88}Co_{0.12}AsF single crystals

Low-temperature specific heat (SH) is measured on the 1111-type CaFe_{0.88}Co_{0.12}AsF single crystals under different magnetic fields. A clear SH jump with the height \Delta C/T|_Tc = 10.4 mJ/mol K^2 was observed at the superconducting transition temperature T_c. The electronic SH coefficient \Delta\gamma (B) increases linearly with the field below 5 T and a kink is observed around 5 T, indicating a multi-gap feature in the present system. Such a sign is also reflected in the Tc-B data. A detailed analysis shows that this behavior can be interpreted in terms of a two-gap scenario with the ratio \Delta_L=\Delta_S = 2:8-4:5.

cond-mat.supr-con

Isolating hydrogen in hexagonal boron nitride bubbles by a plasma treatment

Atomically thin hexagonal boron nitride (h-BN) is often regarded as an elastic film that is impermeable to gases. The high stabilities in thermal and chemical properties allow h-BN to serve as a gas barrier under extreme conditions.In this work, we demonstrate the isolation of hydrogen in bubbles of h-BN via plasma treatment.Detailed characterizations reveal that the substrates do not show chemical change after treatment. The bubbles are found to withstand thermal treatment in air,even at 800 degree celsius. Scanning transmission electron microscopy investigation shows that the h-BN multilayer has a unique aligned porous stacking nature, which is essential for the character of being transparent to atomic hydrogen but impermeable to hydrogen molecules. We successfully demonstrated the extraction of hydrogen gases from gaseous compounds or mixtures containing hydrogen element. The successful production of hydrogen bubbles on h-BN flakes has potential for further application in nano/micro-electromechanical systems and hydrogen storage.

physics.app-ph

Enhancing intrinsic detection efficiency of superconducting nanowire single-photon detectors via helium ion irradiation

Realizing an NbN superconducting nanowire single-photon detector (SNSPD) with a 100% intrinsic detection efficiency (IDE) at the near-infrared wavelengths is still challenging. Herein, we developed a post-processing method to increase the IDE of NbN SNSPDs to near unity using a 20 keV helium ion irradiation. The IDE enhancement was achieved owing to the ion-induced reduction of the superconducting energy gap and the electron density of states at the Fermi level, determined with the electrical and magnetic transport measurements. The change in optical absorptance of the irradiated SNSPD was negligible as confirmed by the measured optical reflectance and system detection efficiency (SDE). Benefited with the IDE enhancement, the SDE of an irradiated device was significantly increased from 49% to 92% at 2.2 K for a 1550 nm wavelength.

physics.app-ph

Unusual evolution of B_{c2} and T_c with inclined fields in restacked TaS_2 nanosheets

Recently we reported an enhanced superconductivity in restacked monolayer TaS_2 nanosheets compared with the bulk TaS_2, pointing to the exotic physical properties of low dimensional systems. Here we tune the superconducting properties of this system with magnetic field along different directions, where a strong Pauli paramagnetic spin-splitting effect is found in this system. Importantly, an unusual enhancement as high as 3.8 times of the upper critical field B_{c2}, as compered with the Ginzburg-Landau (GL) model and Tinkham model, is observed under the inclined external magnetic field. Moreover, with the out-of-plane field fixed, we find that the superconducting transition temperature T_c can be enhanced by increasing the in-plane field and forms a dome-shaped phase diagram. An extended GL model considering the special microstructure with wrinkles was proposed to describe the results. The restacked crystal structure without inversion center along with the strong spin-orbit coupling may also play an important role for our observations.

cond-mat.supr-con

In situ annealing effects on the iron-based ladder material BaFe_2S_3: A route to improve the crystal quality

We have grown single crystals of the iron-based ladder material BaFe_2S_3, which is superconductive under high pressure, adopting different conditions. By comparing the behaviors of these samples, it is found that the in situ annealing process can affect the crystal structure and the electrical transport, enhance the antiferromagnetic transition temperature, and reduce the extrinsic ferromagnetic component of the system. An in-depth analysis indicates that the crystal quality is improved by the in situ annealing in terms of reducing both the Fe deficiency and the Fe impurity in the samples. The improvement of the sample quality will facilitate the investigations on the intrinsic properties of this material.

cond-mat.supr-con

Superconducting nanowire single photon detection system for space applications

Superconducting nanowire single photon detectors (SNSPDs) have advanced various frontier scientific and technological fields such as quantum key distribution and deep space communications. However, limited by available cooling technology, all past experimental demonstrations have had ground-based applications. In this work we demonstrate a SNSPD system using a hybrid cryocooler compatible with space applications. With a minimum operational temperature of 2.8 K, this SNSPD system presents a maximum system detection efficiency of over 50% and a timing jitter of 48 ps, which paves the way for various space applications.

physics.app-ph

Edge Control of Graphene Domains Grown on Hexagonal Boron Nitride

Edge structure of graphene has a significant influence on its electronic properties. However, control over the edge structure of graphene domains on insulating substrates is still challenging. Here we demonstrate edge control of graphene domains on hexagonal boron nitride (h-BN) by modifying ratio of working-gases. Edge directions were determined with the help of both moir\'e pattern and atomic-resolution image obtained via atomic force microscopy measurement. It is believed that the variation on graphene edges mainly attributes to different growth rates of armchair and zigzag edges. This work demonstrated here points out a potential approach to fabricate graphene ribbons on h-BN.

cond-mat.mtrl-sci

Strong anisotropy effect in iron-based superconductor CaFe$_{0.882}$Co$_{0.118}$AsF

The anisotropy of the Fe-based superconductors is much smaller than that of the cuprates and the theoretical calculations. A credible understanding for this experimental fact is still lacking up to now. Here we experimentally study the magnetic-field-angle dependence of electronic resistivity in the superconducting phase of iron-based superconductor CaFe$_{0.882}$Co$_{0.118}$AsF, and find the strongest anisotropy effect of the upper critical field among the iron-based superconductors based on the framework of Ginzburg-Landau theory. The evidences of energy band structure and charge density distribution from electronic structure calculations demonstrate that the observed strong anisotropic effect mainly comes from the strong ionic bonding in between the ions of Ca$^{2+}$ and F$^-$, which weakens the interlayer coupling between the layers of FeAs and CaF. This finding provides a significant insight into the nature of experimentally observed strong anisotropic effect of electronic resistivity, and also paves an avenue to design exotic two dimensional artificial unconventional superconductors in future.

cond-mat.supr-con