arXiv subjects

X. Hong

Publications and source records attributed to X. Hong.

At least 19 recordsLinked to original sources

arXiv2025

Magnetic Excitations of a Half-Filled Tl-based Cuprate

Strong electron correlations drive Mott insulator transitions. Yet, there exists no framework to classify Mott insulators by their degree of correlation. Cuprate superconductors, with their tunable doping and rich phase diagrams, offer a unique platform to investigate the evolution of these interactions. However, spectroscopic access to a clean half-filled Mott-insulating state is lacking in compounds with the highest superconducting onset temperature. To fill this gap, we introduce a pristine, half-filled thallium-based cuprate system, Tl$_2$Ba$_5$Cu$_4$O$_{x}$. Using high-resolution resonant inelastic x-ray scattering, we probe long-lived magnon excitations and uncover a pronounced kink in the magnon dispersion, marked by a simultaneous change in group velocity and lifetime broadening. Modeling the dispersion within a Hubbard-Heisenberg approach, we extract the interaction strength and compare it with other cuprate systems. Our results establish a cuprate universal relation between electron-electron interaction and magnon zone-boundary dispersion. Superconductivity seems to be optimal at intermediate correlation strength, suggesting an optimal balance between localization and itinerancy.

cond-mat.supr-con↗

arXiv2024

Decoupling of Static and Dynamic Charge Correlations revealed by Uniaxial Strain in a Cuprate Superconductor

We use uniaxial strain in combination with ultra-high-resolution Resonant Inelastic X-ray Scattering (RIXS) at the oxygen K- and copper L3-edges to study the excitations stemming from the charge ordering wave vector in La1.875Sr0.125CuO4. By detwinning stripe ordering, we demonstrate that the optical phonon anomalies do not show any stripe anisotropy. The low-energy charge excitations also retain an in-plane four-fold symmetry. As such, we find that both phonon and charge excitations are decoupled entirely from the strength of static charge ordering. The almost isotropic character of charge excitations is indicative of a quantum critical behaviour and remains a possible source for the strange metal properties found in the normal state of cuprate superconductors.

cond-mat.str-el↗

arXiv2019

Abrupt Enhancement of Spin-Orbit Scattering Time in Ultrathin Semimetallic SrIrO$_3$ Close to the Metal-Insulator Transition

We report a magnetotransport study of spin relaxation in 1.4-21.2 nm epitaxial SrIrO$_3$ thin films coherently strained on SrTiO$_3$ substrates. Fully charge compensated semimetallic transport has been observed in SrIrO$_3$ films thicker than 1.6 nm, where the charge mobility at 10 K increases from 45 cm$^2$/Vs to 150 cm$^2$/Vs with decreasing film thickness. In the two-dimensional regime, the charge dephasing and spin-orbit scattering lengths extracted from the weak localization/anti-localization effects show power-law dependence on temperature, pointing to the important role of electron-electron interaction. The spin-orbit scattering time $\tau_\text{so}$ exhibits an Elliott-Yafet mechanism dominated quasi-linear dependence on the momentum relaxation time $\tau_\text{p}$. Ultrathin films approaching the critical thickness of metal-insulator transition show an abrupt enhancement in $\tau_\text{so}$, with the corresponding $\tau_\text{so}/\tau_\text{p}$ about 7.6 times of the value for thicker films. A likely origin for such unusual enhancement is the onset of strong electron correlation, which leads to charge gap formation and suppresses spin scattering.

cond-mat.str-el↗

arXiv2015

Effect of Strain on Ferroelectric Field Effect in Strongly Correlated Oxide Sm$_{0.5}$Nd$_{0.5}$NiO$_3$

We report the effect of epitaxial strain on the magnitude and retention of the ferroelectric field effect in high quality PbZr$_{0.3}$Ti$_{0.7}$O$_3$ (PZT)/3.8-4.3 nm Sm$_{0.5}$Nd$_{0.5}$NiO$_3$ (SNNO) heterostructures grown on (001) LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) substrates. For SNNO on LAO, which exhibits a first-order metal-insulator transition (MIT), switching the polarization of PZT induces a 10 K shift in the transition temperature $T_{MI}$, with a maximum resistance change between the on and off states of $\Delta$$R$/$R_{on}$ ~75%. In sharp contrast, only up to 5% resistance change has been induced in SNNO on STO, where the MIT is second-order, with the modulation of $T_{MI}$ negligibly small. We also observe thermally activated retention of the off state resistance $R_{off}$ in both systems, with the activation energy of 22 meV (28 meV) for devices on LAO (STO). The time dynamics and thermal response of the field effect instability points to phonon-assisted interfacical trapping of charged mobile defects, which are attributed to strain induced oxygen vacancies. At room temperature, $R_{off}$ stabilizes at ~55% and ~19% of the initial switching levels for SNNO on LAO and STO, respectively, reflecting the significantly different oxygen vacancy densities in these two systems. Our results reveal the critical role of strain in engineering and modeling the complex oxide composite structures for nanoelectronic and spintronic applications.

cond-mat.str-el↗

arXiv2014

Optimizing Broadband Terahertz Modulation with Hybrid Graphene/Metasurface Structures

We demonstrate efficient terahertz (THz) modulation by coupling graphene strongly with a broadband THz metasurface device. This THz metasurface, made of periodic gold slit arrays, shows near unity broadband transmission, which arises from coherent radiation of the enhanced local-field in the slits. Utilizing graphene as an active load with tunable conductivity, we can significantly modify the local-field enhancement and strongly modulate the THz wave transmission. This hybrid device also provides a new platform for future nonlinear THz spectroscopy study of graphene.

cond-mat.mes-hall↗

arXiv2014

Structural Changes Related to the Magnetic Transitions in Hexagonal InMnO3

Two magnetic ordering transitions are found in InMnO3, the paramagnetic to antiferromagnetic transition near ~118 K and a lower possible spin rotation transition near ~42 K. Multiple length scale structural measurements reveal enhanced local distortion found to be connected with tilting of the MnO5 polyhedra as temperature is reduced. Strong coupling is observed between the lattice and the spin manifested as changes in the structure near both of the magnetic ordering temperatures (at ~42 K and ~ 118 K). External parameters such as pressure are expected to modify the coupling.

cond-mat.mtrl-sci↗

arXiv2013

Domain wall roughness and creep in nanoscale crystalline ferroelectric polymers

We report piezo-response force microscopy studies of the static and dynamic properties of domain walls (DWs) in 11 to 36 nm thick films of crystalline ferroelectric poly(vinylidene-fluoride-trifluorethylene). The DW roughness exponent ζ ranges from 0.39 to 0.48 and the DW creep exponent μ varies from 0.20 to 0.28, revealing an unexpected effective dimensionality of ~1.5 that is independent of film thickness. Our results suggest predominantly 2D ferroelectricity in the layered polymer and we attribute the fractal dimensionality to DW deroughening due to the correlations between the in-plane and out-of-plane polarization, an effect that can be exploited to achieve high lateral domain density for developing nanoscale ferroelectrics-based applications.

cond-mat.mtrl-sci↗

arXiv2012

Integrating Functional Oxides with Graphene

Graphene-oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the intrinsic properties of graphene is also critical to fundamental studies and technological development of graphene. Here we review our recent effort on understanding the transport properties of graphene interfaced with ferroelectric Pb(Zr,Ti)O_3 (PZT) and high-k HfO_2. Graphene field effect devices prepared on high-quality single crystal PZT substrates exhibit up to tenfold increases in mobility compared to SiO_2-gated devices. An unusual and robust resistance hysteresis is observed in these samples, which is attributed to the complex surface chemistry of the ferroelectric. Surface polar optical phonons of oxides in graphene transistors play an important role in the device performance. We review their effects on mobility and the high source-drain bias saturation current of graphene, which are crucial for developing graphene-based room temperature high-speed amplifiers. Oxides also introduce scattering sources that limit the low temperature electron mobility in graphene. We present a comprehensive study of the transport and quantum scattering times to differentiate various scattering scenarios and quantitatively evaluate the density and distribution of charged impurities and the effect of dielectric screening. Our results can facilitate the design of multifunctional nano-devices utilizing graphene-oxide hybrid structures.

cond-mat.mes-hall↗

arXiv2012

Evidence for spin-flip scattering and local moments in dilute fluorinated graphene

The issue of whether local magnetic moments can be formed by introducing adatoms into graphene is of intense research interest because it opens the window to fundamental studies of magnetism in graphene, as well as of its potential spintronics applications. To investigate this question we measure, by exploiting the well-established weak localization physics, the phase coherence length L_phi in dilute fluorinated graphene. L_phi reveals an unusual saturation below ~ 10 K, which cannot be explained by non-magnetic origins. The corresponding phase breaking rate increases with decreasing carrier density and increases with increasing fluorine density. These results provide strong evidence for spin-flip scattering and points to the existence of adatom-induced local magnetic moment in fluorinated graphene. Our results will stimulate further investigations of magnetism and spintronics applications in adatom-engineered graphene.

cond-mat.mes-hall↗

arXiv2011

Electron-electron interaction and electron-hole asymmetry in bilayer graphene (Supporting Materials)

We report precision measurements of the effective mass m* in high-quality bilayer graphene using the temperature dependence of the Shubnikov-de Haas oscillations. In the density range of 0.7 x 10^12/cm^2 < n < 4.1 x 10^12 /cm^2, both the hole mass m*_h and the electron mass m*_e increase with increasing density, demonstrating the hyperbolic nature of the bands. The hole mass m*_h is approximately 20-30% larger than the electron mass m*_e. Tight-binding calculations provide a good description of the electron-hole asymmetry and yield an accurate measure of the inter-layer hopping parameter v_4 = 0.063. Both m*_h and m*_e are substantially suppressed compared to single-particle values, providing clear and unprecedented evidence for the strong renormalization effect of electron-electron interaction in the band structure of bilayer graphene.

cond-mat.str-el↗

arXiv2011

Electron-electron interaction and electron-hole asymmetry in bilayer graphene

cond-mat.str-el↗

arXiv2011

Global e-VLBI observations of the gamma-ray narrow line Seyfert 1 PMN J0948+0022

There is growing evidence of relativistic jets in radio-loud narrow-line Seyfert 1 (RL-NLS1) galaxies. We constrain the observational properties of the radio emission in the first RL-NLS1 galaxy ever detected in gamma-rays, PMN J0948+0022, i.e., its flux density and structure in total intensity and in polarization, its compactness, and variability. We performed three real-time e-VLBI observations of PMN J0948+0022 at 22 GHz, using a global array including telescopes in Europe, East Asia, and Australia. These are the first e-VLBI science observations ever carried out with a global array, reaching a maximum baseline length of 12458 km. The observations were part of a large multiwavelength campaign in 2009. The source is detected at all three epochs. The structure is dominated by a bright component, more compact than 55 microarcsec, with a fainter component at a position angle theta~ 35deg. Relativistic beaming is required by the observed brightness temperature of 3.4x10^11 K. Polarization is detected at a level of about 1%. The parameters derived by the VLBI observations, in addition to the broad-band properties, confirm that PMN J0948+0022 is similar to flat spectrum radio quasars. Global e-VLBI is a reliable and promising technique for future studies.

astro-ph.CO↗

arXiv2010

The first scientific experiment using Global e-VLBI observations: a multiwavelength campaign on the gamma-ray Narrow-Line Seyfert 1 PMN J0948+0022

The detection of gamma-ray emission by Fermi-LAT from the radio loud Narrow Line Seyfert 1 PMN J0948+0022 (Abdo et al. 2009, ApJ 699, 976) triggered a multi-wavelength campaign between March and July 2009. Given its high compactness (Doi et al. 2006, PASJ 58, 829), inverted spectrum, and 0deg declination, the source was an ideal target to observe at 22 GHz with a Global VLBI array extending from Europe to East Asia and Australia. In order to deliver prompt results to be analysed in combination with the other instruments participating in the campaign, the observations were carried out with real time VLBI, for the first time on a Global scale. Indeed, the main results have been published just a few months after the campaign (Abdo et al. 2009, ApJ 707, 727). Here we present additional details about the e-VLBI observations.

astro-ph.CO↗

arXiv2010

Colossal negative magnetoresistance in dilute fluorinated graphene

Adatoms offer an effective route to modify and engineer the properties of graphene. In this work, we create dilute fluorinated graphene using a clean, controlled and reversible approach. At low carrier densities, the system is strongly localized and exhibits an unexpected, colossal negative magnetoresistance. The zero-field resistance is reduced by a factor of 40 at the highest field of 9 T and shows no sign of saturation. Unusual "staircase" field dependence is observed below 5 K. The magnetoresistance is highly anisotropic. We discuss possible origins, considering quantum interference effects and adatom-induced magnetism in graphene.

cond-mat.mes-hall↗

arXiv2010

Unusual Resistance Hysteresis in n-Layer Graphene Field Effect Transistors Fabricated on Ferroelectric Pb(Zr_0.2Ti_0.8)O_3

We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr_0.2Ti_0.8)O_3 (PZT) thin films. At low gate voltages, PZT behaves as a high-k dielectric with k up to 100. An unusual resistance hysteresis occurs in gate sweeps at high voltages, with its direction opposite to that expected from the polarization switching of PZT. The relaxation of the metastable state is thermally activated, with an activation barrier of 50-110 meV and a time constant of 6 hours at 300 K. We attribute its origin to the slow dissociation/recombination dynamics of water molecules adsorbed at the graphene-PZT interface. This robust hysteresis can potentially be used to construct graphene-ferroelectric hybrid memory devices.

cond-mat.mes-hall↗

arXiv2009

The quantum scattering time and its implications on scattering sources in graphene

We determine the quantum scattering time tau_q in six graphene samples with mobility of 4,400 < mu < 17,000 cm^2/Vs over a wide range of carrier density (1.2 < n < 6x10^{12}/cm^2). tau_q derived from Shubnikov-de Haas oscillations ranges ~25-74 fs, corresponding to a single-particle level broadening of 4.5-13 meV. The ratio of the transport to quantum scattering time tau_t/tau_q spans 1.5-5.1 in these samples, which can be quantitatively understood combining scattering from short-ranged centers and charged impurities located within 2 nm of the graphene sheet. Our results suggest that charges residing on the SiO_2 surface play a dominant role in limiting carrier mobility in current samples.

cond-mat.mes-hall↗

arXiv2009

Multiwavelength monitoring of the enigmatic Narrow-Line Seyfert 1 PMN J0948+0022 in March-July 2009

Following the recent discovery of gamma rays from the radio-loud narrow-line Seyfert 1 galaxy PMN J0948+0022 (z=0.5846), we started a multiwavelength campaign from radio to gamma rays, which was carried out between the end of March and the beginning of July 2009. The source displayed activity at all the observed wavelengths: a general decreasing trend from optical to gamma-ray frequencies was followed by an increase of radio emission after less than two months from the peak of the gamma-ray emission. The largest flux change, about a factor of about 4, occurred in the X-ray band. The smallest was at ultraviolet and near-infrared frequencies, where the rate of the detected photons dropped by a factor 1.6-1.9. At optical wavelengths, where the sampling rate was the highest, it was possible to observe day-scale variability, with flux variations up to a factor of about 3. The behavior of PMN J0948+0022 observed in this campaign and the calculated power carried out by its jet in the form of protons, electrons, radiation and magnetic field are quite similar to that of blazars, specifically of flat-spectrum radio quasars. These results confirm the idea that radio-loud narrow-line Seyfert 1 galaxies host relativistic jets with power similar to that of average blazars.

astro-ph.HE↗

arXiv2008

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

The carrier mobility μof few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (PZT). In the electron-only regime of the FLG, μreaches 7x10^4 cm^2/Vs at 300K for n = 2.4x10^12/cm^2, 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4x10^5 cm^2/Vs at low temperature. The temperature-dependent resistivity ρ(T) reveals a clear signature of LA phonon scattering, yielding a deformation potential D = 7.8+/-0.5 eV.

cond-mat.mes-hall↗