Radiation damage and recovery of SiPMs exposed to low-momentum muon beams for innovative scintillation-based muon beam monitors
Silicon PhotoMultipliers (SiPMs) are among the standard devices for light detection in scintillator detectors. Some detector designs require these devices to be placed in radioactive areas or directly exposed to particle beams. Specifically, the damage from exposure to low-momentum muons is particularly important, as they have a high energy deposit and they have several applications in material science and particle physics. Eight SiPM models from different manufacturers were exposed to 29 MeV/c positive muons, with an intensity of O(10^6) muons/s for 13 hours, maximising the charge deposited in the depletion region. I-V curves were measured before/after irradiation and annealing; DCR and crosstalk analyses are ongoing, to extract dark count rate and optical crosstalk. Despite showing a measurable increase in dark current, the devices preserved operational stability. Thermal annealing has also been tested by heating the devices at 125°C, showing a recovery of the optimal SiPM features. This work is part of a collaboration between the University of Pavia and ISIS, to develop detectors for low-momentum muons (< 40 MeV/c), based on thin scintillators.