arXiv subjects

Ward Beyermann

Publications and source records attributed to Ward Beyermann.

4 recordsLinked to original sources

arXiv2021

Topological phonons in an inhomogeneously strained silicon-6: Possible evidence of the high temperature spin superfluidity and the second sound of topological phonons

The superposition of topological phonons and flexoelectronic charge separation in an inhomogeneously strain Si give rise to topological electronic magnetism of phonons. The topological electronic magnetism of phonons is also expected to give rise to stationary spin current or spin superfluidity. In this experimental study, we present possible evidence of spin superfluidity in an inhomogeneously strained p-Si thin films samples. The spin superfluidity is uncovered using non-local resistance measurement. A resonance behavior is observed in a non-local resistance measurement at 10 kHz and between 270 K and 281.55 K, which is attributed to the second sound. The observation of second sound and spatially varying non-local resistance phase are the evidences for spin superfluidity. The spatially varying non-local resistance with opposite phase are also observed in Pt/MgO/p-Si sample. The overall non-local responses can be treated as a standing waveform from temporal magnetic moments of the topological phonons.

cond-mat.mtrl-sci↗

arXiv2021

Topological phonons in an inhomogeneously strained silicon-5: Inhomogeneous magnetoelectronic effect in a conductor

The spatially inhomogeneity in a magnetic crystal give rise to electric polarization, which is known as inhomogeneous magnetoelectric effect. Similarly, an inhomogeneous magnetoelectronic effect in a conducting multiferroic material give rise to spatially inhomogeneous magnetic moment and spin distribution due to spatially inhomogeneity in the charge carrier concentration. In this study, we present experimental evidence of inhomogeneous magnetoelectronic effect in Py/p-Si layered structure. The Py/p-Si layered structure exhibit electronic multiferroicity due to superposition of flexoelectronic charge carrier doping and topological phonons. It gives rise to spatially modulations in the spin density and magnetic moment, which are discovered using the Hall effect measurement. The charge carrier density as well as type of the charge carrier are found to be a function of spatial coordinate as well as direction of magnetic field. The observed modulations can also be interpreted as incommensurate SDW with wavelength of ~142 um. The inhomogeneous magnetoelectronic effect also give rise to magnetocaloric effect, which is uncovered using thermal hysteresis in the magnetoresistance measurement. This is a first experimental evidence of inhomogeneous magnetoelectronic effect, which is electronic counterpart of the magnetoelectric effect.

cond-mat.mtrl-sci↗

arXiv2021

Flexoelectronic doping of the degenerate silicon and the correlated electron behavior

In metal/degenerately doped silicon bilayer structure, the interfacial flexoelectric effect due to strain gradient leads to charge carrier transfer from metal layer to the silicon layer. This excess charge carrier concentration is called flexoelectronic doping or flexoelectronic charge transfer, which gives rise to an electronically polarized (order of magnitude larger than ferroelectric materials) silicon layer. In the transport measurements, the charge carrier concentration in silicon is found to increase by two orders of magnitude due to flexoelectronic doping, which changes the Fermi level and the Hall response. The flexoelectronic charge accumulation modifies the electron-electron and the electron phonon coupling, which gives rise to Mott metal-insulator transition and magnetism of phonons, respectively. The coexistence of flexoelectronic polarization and magnetism gives rise to a new class of materials called electronic multiferroics. By controlling the flexoelectronic doping, material behavior can potentially be engineered for quantum, spintronics and electronics applications in semiconductor materials.

cond-mat.mtrl-sci↗

arXiv2018

Pressure-induced spin reorientation transition in layered ferromagnetic insulator Cr2Ge2Te6

Anisotropic magnetoresistance (AMR) of Cr2Ge2Te6 (CGT), a layered ferromagnetic insulator, is investigated under an applied hydrostatic pressure up to 2 GPa. The easy axis direction of the magnetization is inferred from the AMR saturation feature in the presence and absence of the applied pressure. At zero applied pressure, the easy axis is along the c-direction or perpendicular to the layer. Upon application of a hydrostatic pressure>1 GPa, the uniaxial anisotropy switches to easy-plane anisotropy which drives the equilibrium magnetization from the c-axis to the ab-plane at zero magnetic field, which amounts to a giant magnetic anisotropy energy change (>100%). As the temperature is increased across the Curie temperature, the characteristic AMR effect gradually decreases and disappears. Our first-principles calculations confirm the giant magnetic anisotropy energy change with moderate pressure and assign its origin to the increased off-site spin-orbit interaction of Te atoms due to a shorter Cr-Te distance. Such a pressure-induced spin reorientation transition is very rare in three-dimensional ferromagnets, but it may be common to other layered ferromagnets with similar crystal structures to CGT, and therefore offers a unique way to control magnetic anisotropy.

cond-mat.mtrl-sci↗