arXiv subjects

Wanxing Lin

Publications and source records attributed to Wanxing Lin.

8 recordsLinked to original sources

arXiv2026

Chiral Magnons: Mechanisms and Research Progress

Chiral magnons are distinctive collective spin excitations in magnetic ordered systems, whose dispersion relations break momentum-inversion symmetry, $\omega(\boldsymbol{k}) \neq \omega(-\boldsymbol{k})$, resulting in essential non-reciprocal spin-wave propagation. This built-in directionality provides new opportunities for spin information transfer, thermal-spin interconversion, and low-dissipation non-reciprocal microwave devices, which complement but differ from topological magnonics. In recent years, the proposal and rapid development of altermagnetism have broadened the physical origin and research framework of chiral magnons, making them a research frontier in condensed matter physics. This review presents a unified framework for chiral magnons, covering symmetry-breaking mechanisms, material implementation, experimental characterization, transport response, and many-body non-Hermitian dynamics, and evaluates routes toward room-temperature and device-related platforms. The discussion is based on symmetry analysis, model Hamiltonians, and spin-wave theory, combined with first-principles calculations as well as recent spectroscopic (e.g., inelastic and polarized neutron scattering, Brillouin light scattering) and transport measurements. This review further summarizes bulk-gap and Berry-curvature induced chiral magnon edge states, the enhancement of non-reciprocity via chiral spin pumping and cavity-magnon hybrids, as well as non-Hermitian features arising from multiparticle damping and gain-loss competition. This review provides a comprehensive reference for elucidating the underlying mechanisms of chiral magnons, advancing the synthesis and experimental characterization of novel materials, and also guiding the design of next-generation non-reciprocal magnonic devices.

cond-mat.str-el↗

arXiv2025

A molecular rotor driven by an electric field on graphene

We propose a scheme for driving a dipolar molecular rotor to rotate continuously by applying an external electric field: the dipolar rotor is fixed on a graphene sheet via a metal atom to facilitate the free rotation; it is in the meantime subjected to an electric field oriented parallel to the graphene sheet. We use computational modeling with density functional theory and Newtonian mechanics, similar to molecular dynamics simulations, to obtain the torque, angular velocity, and rotation period of the rotor. Our results show that the dipolar rotor designed here can rotate with a period of 2.96 ps by an alternating rectangular electric field with a strength of 0.5 V/{\AA}. However, a cosine wave alternating electric field depending on time cannot drive the dipolar rotor to rotate regularly. Therefore, a cosine wave electric field depending on the rotation angle is suggested, as it can not only drive the rotor but also produce additional power. Machine learning molecular dynamics (MLMD) simulations further confirm that the rotor remains thermodynamically stable under an electric field. This work reveals the rotation mechanism of a dipolar molecular rotor in a transverse electric field, and we hope this work can open a new path for designing more diverse molecular machines in experiments.

physics.comp-ph↗

arXiv2021

Strain-induced topological phase transition in two-dimensional platinum ditelluride

Topological phase transition is a hot topic in condensed matter physics and computational material science. Here, we investigate the electronic structure and phonon dispersion of the two-dimensional (2D) platinum ditelluride ($PtTe_2$) using the density functional theory. It is found that the $PtTe_2$ monolayer is a trivial insulator with an indirect band gap of 0.347eV. Based on parity analysis, the biaxial tensile strain can drive the topological phase transition. As the strain reaches 19.3%, $PtTe_2$ undergoes a topological phase transition, which changes from a trivial band insulator to a topological insulator with $Z_2=1$. Unlike conventional honeycomb 2D materials with topological phase transition, which gap closes at K points, the strained $PtTe_2$ monolayer becomes gapless at M points under critical biaxial strain. The band inversion leads the switch of the parities near the Fermi level, which gives rise to the topological phase transition. The novel monolayer $PtTe_2$ has a potential application in the field of micro-electronics.

cond-mat.mtrl-sci↗

arXiv2020

Single-ion anisotropy effects on the critical behaviors of quantum entanglement and correlation in the spin-1 Heisenberg chain

Quantum entanglement and correlations in the spin-1 Heisenberg chain with single-ion anisotropy are investigated using the quantum renormalization group method. Negativity and quantum discord (QD) are calculated with various anisotropy parameters $\bigtriangleup$ and single-ion anisotropy parameters $D$. We focus on the relations between two abovementioned physical quantities and on transitions between the N\'eel, Haldane, and Large-D phases. It is found that both negativity and QD exhibit step-like patterns in different phases as the size of the system increases. Interestingly, the single-ion anisotropy parameter $D$, which can be modulated using nuclear electric resonance (2020 \textit{Nature} \textbf{579} 205), plays an important role in tuning the quantum phase transition (QPT) of the system. Both the first partial derivative of the negativity and quantum discord with respect to $D$ or $\bigtriangleup$ exhibit nonanalytic behavior at the phase transition points, which corresponds directly to the divergence of the correlation length. The quantum correlation critical exponents derived from negativity and QD are equal, and are the reciprocal of the correlation length exponent at each critical point. This work extends the application of quantum entanglement and correlations as tools for depicting QPTs in spin-1 systems.

cond-mat.str-el↗

arXiv2020

Phonon dispersions and electronic structures of two-dimensional IV-V compounds

One novel family of two-dimensional IV-V compounds have been proposed, whose dynamical stabilities and electronic properties have been systematically investigated using the density functional theory. Extending from our previous work, two phases of carbon phosphorus bilayers \alpha- and \beta-C$_{2}$P$_{2}$ have been proposed. Both of them are dynamically stable and thermally stable at 300K. They possess intrinsic HSE gaps of 2.70 eV and 2.67 eV, respectively. Similar \alpha- and \beta-C$_{2}$Y$_{2}$ (Y= As, Sb, and Bi) can be obtained if the phosphorus atoms in the \alpha- and \beta-C$_{2}$P$_{2}$ replaced by other pnictogens, respectively. If the C atoms in the \alpha- and \beta-C$_{2}$Y$_{2}$ (Y= P, As, Sb, and Bi) are further replaced by other IV elements X (X=Si, Ge, Sn, and Pb), respectively, more derivatives of \alpha- and \beta-X$_{2}$Y$_{2}$ (Y=N, P, As, Sb, and Bi) also can be obtained. It was found that the majority of them are dynamically stable. The proposed compounds range from metal to insulators depending on their constitutions. All insulated compounds can undergo a transition from insulator to metal induced by biaxial strain. Some of them can undergo a transition from indirect band gap to direct band gap. These new compounds can become candidates as photovoltaic device, thermoelectric material field as well as lamellated superconductors.

cond-mat.mtrl-sci↗

arXiv2017

Stabilities and novel electronic structures of three carbon nitride bilayers

Three new novel phases of carbon nitride (CN) bilayer, which are named as \alpha-C$_{2}$N$_{2}$, \beta-C$_{2}$N$_{2}$ and \gamma-C$_{4}$N$_{4}$, respectively, have been predicted in this paper. All of them are consisted of two CN sheets connected by C-C covalent bonds. The phonon dispersions reveal that all these phases are dynamically stable, since no imaginary frequency is found for them. Transition path way between \alpha-C$_{2}$N$_{2}$ and \beta-C$_{2}$N$_{2}$ is investigated, which involves bond-breaking and bond-reforming between C and N. This conversion is difficult, since the activation energy barrier is found to be 1.90 eV per unit cell, high enough to prevent the transformation at room temperature. Electronic structures calculations show that they are all semiconductors with indirect band gap of 3.76 / 5.22 eV, 4.23 / 5.75 eV and 2.06 / 3.53 eV by PBE / HSE calculation, respectively. The \beta-C$_{2}$N$_{2}$ has the widest band gap among the three phases. From our results, the three new two-dimensional materials have potential applications in the electronics, semiconductors, optics and spintronics.

cond-mat.mtrl-sci↗

arXiv2017

Electronic Structure and Band Gap Engineering of Two-Dimensional Octagon-Nitrogene

We have predicted a new phase of nitrogen with octagon structure in our previous study, which we referred to as octa-nitrogene (ON). In this work, we make further investigation on its electronic structure. The phonon band structure has no imaginary phonon modes, which indicates that ON is dynamically stable. Using ab initio molecular dynamic simulations, the structure is found to stable up to 100K, and ripples that are similar to that of graphene is formed on the ON sheet. Based on DFT calculation on its band structure, single layer ON is a 2D large-gap semiconductor with a band gap of 4.7eV. Because of inter-layer interaction, stackings can decrease the band gap. Biaxial tensile strain and perpendicular electric field can greatly influence the band structure of ON, in which the gap decreases and eventually closes as the biaxial tensile strain or the perpendicular electric field increases. In other words, both biaxial tensile strain and perpendicular electric field can drive the insulator-to-metal transition, and thus can be used to engineer the band gap of ON. From our results, ON has potential applications in the electronics, semiconductors, optics and spintronics, and so on.

cond-mat.mtrl-sci↗

arXiv2017

Phonon and electronic properties of semiconducting silicon nitride bilayers

The two-dimensional (2D) IV-V semiconductors have attracted much attention due to their fascinating electronic and optical properties. In this work, we predicted three phases of silicon nitrides, denoted $\alpha$-Si$_{2}$N$_{2}$, $\beta$-Si$_{2}$N$_{2}$, and $\gamma$-Si$_{4}$N$_{4}$, respectively. Both $\alpha$-Si$_{2}$N$_{2}$ and $\beta$-Si$_{2}$N$_{2}$ consist of two buckled SiN sheets, and $\gamma$-Si$_{4}$N$_{4}$ consists of two puckered SiN sheets. It is challenging to transform between $\alpha$-Si$_{2}$N$_{2}$ and $\beta$-Si$_{2}$N$_{2}$ because of the high energy barrier. The three dynamically stable bilayers are semiconductors with fundamental indirect band gaps from 0.25 eV to 2.92 eV. As expected, only the s and p orbitals contribute to the electronic states, and the pz orbitals dominate near the Fermi level. Furthermore, insulator-metal transitions occur in $\alpha$-Si$_{2}$N$_{2}$ and $\beta$-Si$_{2}$N$_{2}$ under the biaxial strain of 16%. These materials perhaps have potential applications in microelectronics and spintronics.

cond-mat.mtrl-sci↗