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W. So

Publications and source records attributed to W. So.

2 recordsLinked to original sources

Resistance distance in connected balanced digraphs

Let $D = (V, E)$ be a strongly connected and balanced digraph with vertex set $V$ and arc set $E.$ The classical distance $d_{ij}^D$ from $i$ to $j$ in $D$ is the length of a shortest directed path from $i$ to $j$ in $D.$ Let $L$ be the Laplacian matrix of $D$ and $ L^{\dagger} = ( l_{ij}^{\dagger} )$ be the Moore-Penrose inverse of $L.$ The resistance distance from $i$ to $j$ is then defined by $r_{ij}^D := l_{ii}^{\dagger } + l_{jj}^{\dagger } - 2 l_{ij}^{\dagger }.$ Let $\{ D_1, D_2, ...., D_k \}$ be a sequence of strongly connected balanced digraphs with $D_i \cap D_j$ having at most one vertex in common for all $i \neq j$ and with $r_{ij}^{D_t} \leq d_{ij}^{D_t} \ \forall \ t = 1 \ \mathrm{to} \ k.$ Let $\mathcal{C}$ be a collection of connected, balanced digraphs, each member of which is a finite union of the form $D_1 \cup D_2 \cup ....\cup D_k$ where each $D_i$ is a connected and balanced digraph with $D_{i} \cap ( D_1 \cup D_2 \cup ....\cup D_{i-1} )$ being a single vertex, for all $i,$ $1 < i \leq k.$ In this paper, we show that for any digraph $D$ in $\mathcal{C}$, $r_{ij}^D \leq d_{ij}^D \ (*)$. This is established by partitioning the Laplacian matrix of $D$. This generalizes the main result in [3]. As a corollary, we deduce a simpler proof of the result in [3], namely, that for any directed cactus $D$, the inequality (*) holds. Our results provide an affirmative answer to a well known interesting conjecture ( cf : Conjecture 1.3 ).

math.CO

Dependence of Mobility on Density of Gap States in Organics by GAMEaS - Gate Modulated Activation Energy Spectroscopy

We develop a broadly applicable transport-based technique, GAte Modulated activation Energy Spectroscopy (GAMEaS), for determining the density of states (DOS) in the energy gap. GAMEaS is applied to field effect transistors made from different single crystal oligomer semiconductors to extract the free-carrier mobility, u_0, from the field effect mobility, u_eff. Samples with a lower DOS exhibit higher u_eff. Values of u_0 up to 100 +/- 40 cm2/Vs at 300K are observed, showing that performance can be greatly enhanced by improving sample purity and crystal quality.

cond-mat.mtrl-sci