arXiv subjects

W. Pan

Publications and source records attributed to W. Pan.

At least 19 recordsLinked to original sources

arXiv2025

Robust and Symmetric Magnetic Field Dependency of Superconducting Diode Effect in Asymmetric Dirac Semimetal SQUIDs

The recent demonstration of the superconducting diode effect (SDE) has generated renewed interests in superconducting electronics in which devices such as compact superconducting diodes that can perform signal rectification where low-energy operations are needed. In this article, we present our results of robust and symmetric-in-magnetic-field SDE in asymmetric superconducting quantum interference devices (SQUIDs) realized in high-quality Dirac semimetal Cd3As2 thin film grown by the molecular beam epitaxy (MBE) technique. Consistent with previous work, a zero magnetic field SDE is observed. Furthermore, the difference in switching current is independent of the strength and polarity of an out-plane magnetic field in the range of -10 mT and 10 mT. We speculate that this robust symmetric-in-field SDE in our Dirac semimetal SQUIDs is due to the formation of helical spin texture, theoretically predicted in Dirac semimetals.

cond-mat.supr-con↗

arXiv2024

Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects

In this article, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero $^o$C. A sharp superconducting transition at $T \sim 1.3$ K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/antimonide heterostructures with mobility $\mu \sim 1.0 \times 10^6$ cm$^2$/Vs. These results clearly demonstrate we have achieved growing high-quality epi-Al/antimonide heterostructures, a promising platform for the exploration of Josephson junction effects for quantum information science and microelectronics applications.

cond-mat.mtrl-sci↗

arXiv2024

Quantum Enhanced Josephson Junction Field-Effect Transistors for Logic Applications

Josephson junction field-effect transistors (JJFETs) have recently re-emerged as promising candidates for superconducting computing. For JJFETs to perform Boolean logic operations, the so-called gain factor $\alpha_{R}$ must be larger than 1. In a conventional JJFET made with a classical channel material, due to a gradual dependence of superconducting critical current on the gate bias, $\alpha_{R}$ is much smaller than 1. In this Letter, we propose a new device structure of quantum enhanced JJFETs in a zero-energy-gap InAs/GaSb heterostructure. We demonstrate that, due to an excitonic insulator quantum phase transition in this zero-gap heterostructure, the superconducting critical current displays a sharp transition as a function of gate bias, and the deduced gain factor $\alpha_{R}$ ~ 0.06 is more than 50 times that (~ 0.001) reported in a classical JJFET. Further optimization may allow achieving a gain factor larger than 1 for logic applications.

cond-mat.supr-con↗

arXiv2024

Time reversal symmetry breaking and zero magnetic field Josephson diode effect in Dirac semimetal Cd3As2-mediated asymmetric SQUIDs

A zero-magnetic-field Josephson diode effect (JDE) is observed in an asymmetric superconducting quantum interference device (SQUID) mediated by Dirac semimetal Cd3As2. We argue that a phase coupling between the surface and bulk superconducting channels, a unique phenomenon recently identified in the observations of fractional Josephson effect and Leggett modes in Cd3As2, can break time reversal symmetry and therefore give rise to the zero-field JDE. Our results are anticipated to have important implications in superconducting electronic circuit applications.

cond-mat.supr-con↗

arXiv2023

Discovering User Types: Mapping User Traits by Task-Specific Behaviors in Reinforcement Learning

When assisting human users in reinforcement learning (RL), we can represent users as RL agents and study key parameters, called \emph{user traits}, to inform intervention design. We study the relationship between user behaviors (policy classes) and user traits. Given an environment, we introduce an intuitive tool for studying the breakdown of "user types": broad sets of traits that result in the same behavior. We show that seemingly different real-world environments admit the same set of user types and formalize this observation as an equivalence relation defined on environments. By transferring intervention design between environments within the same equivalence class, we can help rapidly personalize interventions.

cs.LG↗

arXiv2022

Evidence of decoupling of surface and bulk states in Dirac semimetal $Cd_{3}As_{2}$

Dirac semimetals have attracted a great deal of current interest due to their potential applications in topological quantum computing, low-energy electronic applications, and single photon detection in the microwave frequency range. Herein are results from analyzing the low magnetic (B) field weak-antilocalization behaviors in a Dirac semimetal $Cd_{3}As_{2}$ thin flake device. At high temperatures, the phase coherence length $l_{\phi}$ first increases with decreasing temperature (T) and follows a power law dependence of $l_{\phi}\propto$ T$^{-0.4}$. Below ~ 3K, $l_{\phi}$ tends to saturate to a value of ~ 180 nm. Another fitting parameter $\alpha$, which is associated with independence transport channels, displays a logarithmic temperature dependence for T > 3K, but also tends to saturate below ~ 3K. The saturation value, ~ 1.45, is very close to 1.5, indicating three independent electron transport channels, which we interpret as due to decoupling of both the top and bottom surfaces as well as the bulk. This result, to our knowledge, provides first evidence that the surfaces and bulk states can become decoupled in electronic transport in Dirac semimetal $Cd_{3}As_{2}$.

cond-mat.mes-hall↗

arXiv2021

Efficient World-line-based Quantum Monte Carlo Method Without Hubbard-Stratonovich Transformation

By precisely writing down the matrix element of the local Boltzmann operator, we have proposed a new path integral formulation for quantum field theory and developed a corresponding Monte Carlo algorithm. With current formula, the Hubbard-Stratonovich transformation is not necessary, and is not based on the determinant approach, which can improve the computational efficiency. The results show that, the simulation time has the square-law scaling with system sizes, which is comparable with the usual first-principle calculation. The current formula also improves the accuracy of the Suzuki-Trotter decomposition. As an example, we have studied the one-dimensional half-filled Hubbard model at finite temperature. The obtained results are in excellent agreement with the known solutions. The new formula and Monte Carlo algorithm can be used in various studies.

cond-mat.str-el↗

arXiv2020

Unraveling the Topological Phase of ZrTe$_5$ via Magneto-infrared Spectroscopy

For materials near the phase boundary between weak and strong topological insulators (TIs), their band topology depends on the band alignment, with the inverted (normal) band corresponding to the strong (weak) TI phase. Here, taking the anisotropic transition-metal pentatelluride ZrTe$_5$ as an example, we show that the band inversion manifests itself as a second extremum (band gap) in the layer stacking direction, which can be probed experimentally via magneto-infrared spectroscopy. Specifically, we find that the band anisotropy of ZrTe$_5$ features a slow dispersion in the layer stacking direction, along with an additional set of optical transitions from a band gap away from the Brillouin zone center. Our work identifies ZrTe5 as a strong TI at liquid helium temperature and provides a new perspective in determining band inversion in layered topological materials.

cond-mat.mes-hall↗

arXiv2019

Zero Bias Conductance Peak in Dirac Semimetal-Superconductor Devices

Majorana zero modes (MZMs), fundamental building blocks for realizing topological quantum computers, can appear at the interface between a superconductor and a topological material. One of the experimental signatures that has been widely pursued to confirm the existence of MZMs is the observation of a large, quantized zero-bias conductance peak (ZBCP) in the differential conductance measurements. In this Letter, we report observation of such a large ZBCP in junction structures of normal metal (titanium/gold Ti/Au) + Dirac semimetal (cadmium arsenide Cd3As2) + conventional superconductor (aluminum Al), with a value close to four times that of the normal state conductance. Our detailed analyses suggest that this large ZBCP is most likely not caused by MZMs. We attribute the ZBCP, instead, to the existence of a supercurrent between two far-separated superconducting Al electrodes, which shows up as a zero-bias peak because of the circuitry and thermal fluctuations of the supercurrent phase, a mechanism conceived by Ivanchenko and Zil'berman more than 50 years ago [JETP 28, 1272 (1969)]. Our results thus call for extreme caution when assigning the origin of a large ZBCP to MZMs in a multiterminal semiconductor or topological insulator/semimetal setup. We thus provide criteria for identifying when the ZBCP is definitely not caused by an MZM. Furthermore, we present several remarkable experimental results of a supercurrent effect occurring over unusually long distances and clean perfect Andreev reflection features.

cond-mat.mes-hall↗

arXiv2019

Particle-Hole Symmetry and the Fractional Quantum Hall Effect in the Lowest Landau Level

We report on detailed experimental studies of a high-quality heterojunction insulated-gate field-effect transistor (HIGFET) to probe the particle-hole symmetry (PHS) of the FQHE states about half-filling in the lowest Landau level. The HIGFET was specially designed to vary the density of a two-dimensional electronic system under constant magnetic fields. We find in our constant magnetic field, variable density measurements that the sequence of FQHE states at filling factors nu = 1/3, 2/5, 3/7 ... and its particle-hole conjugate states at filling factors 1 - nu = 2/3, 3/5, 4/7 ... have a very similar energy gap. Moreover, a reflection symmetry can be established in the magnetoconductivities between the nu and 1 - nu states about half-filling. Our results demonstrate that the FQHE states in the lowest Landau level are manifestly particle-hole symmetric.

cond-mat.mes-hall↗

arXiv2018

Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites

Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent need is to identify a material system that is suitable for downscaling and is compatible with low-power logic applications. Self-assembled, vertically-aligned La_{2/3}Sr_{1/3}MnO_3:ZnO nanocomposites, in which La_{2/3}Sr_{1/3}MnO_3 (LSMO) matrix and ZnO nanopillars form an intertwined structure with coincident-site-matched growth occurring between the LSMO and ZnO vertical interfaces, may offer new MRAM applications by combining their superior electric, magnetic (B), and optical properties. In this paper, we show the results of electrical current induced magnetic hysteresis in magneto-resistance measurements in these nano-pillar composites. We observe that when the current level is low, for example, 1 uA, the magneto-resistance displays a linear, negative, non-hysteretic B field dependence. Surprisingly, when a large current is used, I > 10 uA, a hysteretic behavior is observed when the B field is swept in the up and down directions. This hysteresis weakens as the sample temperature is increased. A possible spin-valve mechanism related to this electrical current induced magnetic hysteresis is proposed and discussed.

cond-mat.mtrl-sci↗

arXiv2017

Berry Phase and Anomalous Transport of the Composite Fermions at the Half-Filled Landau Level

The fractional quantum Hall effect (FQHE) in two-dimensional electron system (2DES) is an exotic, superfluid-like matter with an emergent topological order. From the consideration of Aharonov-Bohm interaction of electrons and magnetic field, the ground state of a half-filled lowest Landau level is mathematically transformed to a Fermi sea of composite objects of electrons bound to two flux quanta, termed composite fermions (CFs). A strong support for the CF theories comes from experimental confirmation of the predicted Fermi surface at $\nu$ = 1/2 (where $\nu$ is the Landau level filling factor) from the detection of the Fermi wave vector in the semi-classical geometrical resonance experiments. Recent developments in the theory of CFs have led to a prediction of a $\pi$ Berry phase for the CF circling around the Fermi surface at half-filling. In this paper we provide the first experimental evidence for the detection of the Berry phase of CFs in the fractional quantum Hall effect. Our measurements of the Shubnikov-de Haas oscillations of CFs as a function carrier density at a fixed magnetic field provide a strong support for an existence of a $\pi$ Berry phase at $\nu$ = 1/2. We also discover that the conductivity of composite fermions at $\nu$ = 1/2 displays an anomalous linear density dependence, whose origin remains mysterious yet tantalizing.

cond-mat.mes-hall↗

arXiv2017

Evidence for an excitonic insulator phase in a zero-gap InAs/GaSb bilayer

Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound state, provided that the exciton binding energy exceeds the energy separation between the single particle states. Here we report on electrical transport measurements on spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (~500 k\Omega) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature-dependence above T = 7 K and perfect stability against quantizing magnetic fields. By quantitatively comparing our data with early theoretical predictions, we show that such unexpectedly large resistance in our nominally zero-gap semi-metal system is probably due to the formation of an excitonic insulator state.

cond-mat.mtrl-sci↗

arXiv2016

Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy

We perform a magneto-infrared spectroscopy study of the semiconductor to semimetal transition of InAs/GaSb double quantum wells from the normal to the inverted state. We show that owing to the low carrier density of our samples (approaching the intrinsic limit), the magneto-absorption spectra evolve from a single cyclotron resonance peak in the normal state to multiple absorption peaks in the inverted state with distinct magnetic field dependence. Using an eight-band Pidgeon-Brown model, we explain all the major absorption peaks observed in our experiment. We demonstrate that the semiconductor to semimetal transition can be realized by manipulating the quantum confinement, the strain, and the magnetic field. Our work paves the way for band engineering of optimal InAs/GaSb structures for realizing novel topological states as well as for device applications in the terahertz regime.

cond-mat.mes-hall↗

arXiv2016

On Identification of Sparse Multivariable ARX Model: A Sparse Bayesian Learning Approach

This paper begins with considering the identification of sparse linear time-invariant networks described by multivariable ARX models. Such models possess relatively simple structure thus used as a benchmark to promote further research. With identifiability of the network guaranteed, this paper presents an identification method that infers both the Boolean structure of the network and the internal dynamics between nodes. Identification is performed directly from data without any prior knowledge of the system, including its order. The proposed method solves the identification problem using Maximum a posteriori estimation (MAP) but with inseparable penalties for complexity, both in terms of element (order of nonzero connections) and group sparsity (network topology). Such an approach is widely applied in Compressive Sensing (CS) and known as Sparse Bayesian Learning (SBL). We then propose a novel scheme that combines sparse Bayesian and group sparse Bayesian to efficiently solve the problem. The resulted algorithm has a similar form of the standard Sparse Group Lasso (SGL) while with known noise variance, it simplifies to exact re-weighted SGL. The method and the developed toolbox can be applied to infer networks from a wide range of fields, including systems biology applications such as signaling and genetic regulatory networks.

eess.SY↗

arXiv2016

Far Infrared Edge Photoresponse and Persistent Edge Transport in an Inverted InAs/GaSb Heterostructure

Direct current (DC) transport and far infrared photoresponse were studied an InAs/GaSb double quantum well with an inverted band structure. The DC transport depends systematically upon the DC bias configuration and operating temperature. Surprisingly, it reveals robust edge conduction despite prevalent bulk transport in our device of macroscopic size. Under 180 GHz far infrared illumination at oblique incidence, we measured a strong photovoltaic response. We conclude that quantum spin Hall edge transport produces the observed transverse photovoltages. Overall, our experimental results support a hypothesis that the photoresponse arises from direct coupling of the incident radiation field to edge states.

cond-mat.mes-hall↗

arXiv2016

Observation of anti-levitation of Landau levels in vanishing magnetic fields

We report an anti-levitation behavior of Landau levels in vanishing magnetic fields in a high quality hetero-junction insulated-gated field-effect transistor. We found, in the Landau fan diagram of electron density versus magnetic field, the positions of the magneto-resistance minima at Landau level fillings \nu=4, 5, 6 move below the 'traditional' Landau level line to lower electron densities. Moreover, the even and odd filling factors show quantitatively different behaviors in anti-levitation, suggesting that the exchange interactions may be important.

cond-mat.mes-hall↗

arXiv2016

A Characterization of the Non-Uniqueness of Nonnegative Matrix Factorizations

Nonnegative matrix factorization (NMF) is a popular dimension reduction technique that produces interpretable decomposition of the data into parts. However, this decompostion is not generally identifiable (even up to permutation and scaling). While other studies have provide criteria under which NMF is identifiable, we present the first (to our knowledge) characterization of the non-identifiability of NMF. We describe exactly when and how non-uniqueness can occur, which has important implications for algorithms to efficiently discover alternate solutions, if they exist.

cs.LG↗