arXiv subjects

W. Knap

Publications and source records attributed to W. Knap.

At least 19 recordsLinked to original sources

arXiv2026

Neural-network reconstruction of THz transmission spectra using electrically tunable AlGaN/GaN plasmonic-crystal analyzer

We demonstrate machine learning (ML) based reconstruction of terahertz transmission spectra using an electrically tunable grating-gate AlGaN/GaN plasmonic-crystal analyzer. The analyzer encodes the transmission spectrum into a voltage-dependent intensity, which is then inverted by an ML algorithm. A feedforward neural network trained on a synthetic dataset is validated experimentally on four samples in standard Fourier Transform Infrared (FTIR) mode and in direct (fixed-mirror) acquisition mode. The network achieves a mean square error (MSE) of the reconstruction of 0.015 in FTIR mode and 0.038 in direct mode, correctly identifying six out of seven ground-truth resonances in each mode. Against a first-difference Tikhonov regularization baseline, the mean reconstruction error is reduced 3.6 times in FTIR mode and 1.55 times in direct mode, with fewer spurious peaks and lower peak-position errors. Voltage-tunable plasmonic filtering combined with neural-network inversion establishes an interferometer-free architecture for THz spectral reconstruction.

physics.optics↗

arXiv2026

Potential of Graphene/AlGaN/GaN heterostructures to study the drag and two-stream instability effects

Graphene/AlGaN/GaN heterostructures are proposed to investigate the drag and two-stream instability effects. In this study, graphene grown by chemical vapor deposition was transferred from copper onto the top of the standard AlGaN/GaN wafer, forming a heterostructure with two conducting layers separated by an AlGaN barrier layer. Contacts fabricated to the two-dimensional electron gas and graphene allowed us to study the drag current induced in graphene by passing the drive current through the two-dimensional electron gas. At low temperatures, the graphene drag current exhibited quantum oscillations as a function of the drive voltage. As temperature increases, quantum oscillations disappear, and the magnitude of the drag current increases. Graphene/AlGaN/GaN heterostructures are a promising platform for studying drag and two-stream instability effects, especially if the AlGaN barrier layer thickness can be reduced to a few nanometers.

cond-mat.mes-hall↗

arXiv2025

Strongly nonlinear Bernstein modes in graphene reveal plasmon-enhanced near-field magnetoabsorption

Bernstein modes -- hybrid magnetoplasmon excitations arising from the coupling between cyclotron motion and collective oscillations in two-dimensional electron systems -- offer direct access to non-local electrodynamics. These modes can exhibit rich nonlinear behavior akin to strong-coupling phenomena in cavity quantum electrodynamics, but reaching nonlinear regime has remained experimentally challenging. Here we report the observation of nonlinear Bernstein modes in graphene using terahertz excitation with near-field enhancement from embedded metallic contacts. Photoresistance spectroscopy reveals sharp resonances at Bc/2 and Bc/3 that saturate at radiation intensities nearly an order of magnitude lower than the cyclotron resonance. We ascribe this to strong local heating of the electron gas due to resonant excitation of high-amplitude Bernstein magnetoplasmons, associated with a combination of the field-concentration effect of the near field and plasmonic amplification that is resonantly enhanced in the region of Bernstein gaps. Polarization-resolved measurements further confirm the near-field origin: Bernstein resonances are insensitive to circular helicity but strongly depend on the angle of linear polarization, in sharp contrast to the cyclotron resonance response. Our results establish graphene as a platform for nonlinear magnetoplasmonics, opening opportunities for strong-field manipulation of collective electron dynamics, out-of-equilibrium electron transport, and solid-state analogues of cavity quantum electrodynamics.

cond-mat.mes-hall↗

arXiv2025

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures

Terahertz transmittance spectra of plasmonic crystals based on two-dimensional electron gas in AlGaN/GaN heterostructures were studied in grating-gate and gateless plasmonic crystals as a function of lateral bias. The decrease of the plasmon resonance frequencies (redshift) with increase of the lateral current was observed for both types of structures. We show that the change of the electron concentration profile and Joule heating are the main phenomena responsible for the shift of plasma resonant frequency. These results are important for designing plasmonic resonances based filters, detectors, and emitters operating under voltage bias conditions.

physics.app-ph↗

arXiv2025

Effect of temperature on 2D terahertz plasmons and electron effective mass in AlGaN/GaN

The effect of temperature on two-dimensional plasmons in large-area AlGaN/GaN plasmonic crystals was studied experimentally. With the temperature increase the resonant plasmon frequency redshifts due to the strong temperature dependence of the electron effective mass and electron concentration under open to the environment surface of AlGaN. The temperature dependence of electron effective mass is confirmed by the cyclotron resonance measurements.

physics.optics↗

arXiv2024

Pressure tuning of HgCdTe epitaxial layers -- the role of the highly disordered buffer layer

HgCdTe alloys are unique because by increasing the Cd content x, one modifies the band structure from inverted to normal, which fundamentally modifies the dispersion of bulk and surface or edge (in the case of quantum wells) energy states. Using alloys with x close to the concentration x_c at which the band inversion transition is observed and with additional application of hydrostatic pressure (p), one creates a favorable playground for studying the evolution of Dirac matter and its topological properties. In this work, cryogenic magnetospectroscopy in quantizing magnetic fields (B) at the far-infrared is used to study inter-Landau-level transitions in high-quality HgCdTe MBE-grown epitaxial layers with x ~ x_c as a function of p up to 4.2 kbar. Special attention is paid to elucidate the role of the substrate and buffer layers, which usually modify the pressure coefficients of epitaxial layers. For this purpose, comparative measurements were carried out on as-grown epilayers with a GaAs substrate and on free-standing layers obtained by etching off the substrate. Spectra registered as a function of B (at given p) were analyzed with the help of the Kane model modified to include magnetic field. The pressure coefficient as well as the difference between conduction and valence band deformation potentials of the free-standing layer were determined at 2 K. Surprisingly, the deformation potentials and pressure coefficients of the epitaxial layer and those of the free-standing layer differed by no more than 10 % in the pressure range up to 4.2 kbar. This finding questions the common belief of a dominant influence of the substrate on the pressure coefficients of epitaxial layers...

cond-mat.mtrl-sci↗

arXiv2023

Electrical Tuning of Terahertz Plasmonic Crystal Phases

We present an extensive study of resonant two-dimensional (2D) plasmon excitations in grating-gated quantum well heterostructures, which enable an electrical control of periodic charge carrier density profile. Our study combines theoretical and experimental investigations of nanometer-scale AlGaN/GaN grating-gate structures and reveals that all terahertz (THz) plasmonic resonances in these structures can be explained only within the framework of the plasmonic crystal model. We identify two different plasmonic crystal phases. The first is the delocalized phase, where THz radiation interacts with the entire grating-gate structure that is realized at a weakly modulated 2D electron gas (2DEG) regime. In the second, the localized phase, THz radiation interacts only with the ungated portions of the structure. This phase is achieved by fully depleting the gated regions, resulting in strong modulation. By gate-controlling of the modulation degree, we observe a continuous transition between these phases. We also discovered that unexpectedly the resonant plasma frequencies of ungated parts (in the localized phase) still depend on the gate voltage. We attribute this phenomenon to the specific depletion of the conductive profile in the ungated region of the 2DEG, the so-called edge gating effect. Although we study a specific case of plasmons in AlGaN/GaN grating-gate structures, our results have a general character and are applicable to any other semiconductor-based plasmonic crystal structures. Our work represents the first demonstration of an electrically tunable transition between different phases of THz plasmonic crystals, which is a crucial step towards a deeper understanding of THz plasma physics and the development of all-electrically tunable devices for THz optoelectronics.

cond-mat.other↗

arXiv2022

Cavity-mediated coupling of antiferromagnetic spin waves

Coupling of space-separated oscillators is interesting for quantum and communication technologies. In this work, it is shown that two antiferromagnetic oscillators placed inside an electromagnetic cavity couple cooperatively to its terahertz modes and, in effect, hybridized magnon-polariton modes are formed. This is supported by a systematic study of reflection spectra from two parallel-plane slabs of hematite ($\alpha$-Fe$_2$O$_3$), measured as a function of their temperatures and separation distance, and modeled theoretically. The mediating cavity was formed by the crystals themselves and the experiment was performed in a practical distance range of a few millimetres and above room temperature. Cavity-mediated coupling allows for engineering of complex resonators controlled by their geometry and by sharing properties of their components.

cond-mat.mes-hall↗

arXiv2022

Temperature Dependent Zero-Field Splittings in Graphene

Graphene is a quantum spin Hall insulator with a 45 $\mu$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for applications in quantum technologies, given the resulting long spin relaxation time. On the other side, the staggered sub-lattice potential, resulting from the coupling of graphene with its boron nitride substrate, compensates intrinsic spin-orbit coupling and decreases the non-trivial topological gap, which may lead to the phase transition into trivial band insulator state. In this work, we present extensive experimental studies of the zero-field splittings in monolayer and bilayer graphene in a temperature range 2K-12K by means of sub-Terahertz photoconductivity-based electron spin resonance technique. Surprisingly, we observe a decrease of the spin splittings with increasing temperature. We discuss the origin of this phenomenon by considering possible physical mechanisms likely to induce a temperature dependence of the spin-orbit coupling. These include the difference in the expansion coefficients between the graphene and the boron nitride substrate or the metal contacts, the electron-phonon interactions, and the presence of a magnetic order at low temperature. Our experimental observation expands knowledge about the non-trivial topological gap in graphene.

cond-mat.mtrl-sci↗

arXiv2022

THz ratchet effect in HgTe interdigitated structures

The emergence of ratchet effects in two-dimensional materials is strongly correlated with the introduction of asymmetry into the system. In general, dual-grating-gate structures forming lateral asymmetric superlattices provide a suitable platform for studying this phenomenon. Here, we report on the observation of ratchet effects in HgTe-based dual-grating-gate structures hosting different band structure properties. Applying polarized terahertz laser radiation we detected linear and polarization independent ratchets, as well as an radiation-helicity driven circular ratchet effect. Studying the ratchet effect in devices made of quantum wells (QWs) of different thickness we observed that the magnitude of the signal substantially increases with decreasing QW width with a maximum value for devices made of QWs of critical thickness hosting Dirac fermions. Furthermore, sweeping the gate voltage amplitude we observed sign-alternating oscillations for gate voltages corresponding to p-type conductivity. The amplitude of the oscillations is more than two orders of magnitude larger than the signal for n-type conducting QWs. The oscillations and the signal enhancement are shown to be caused by the complex valence band structure of HgTe-based QWs. These peculiar features of the ratchet currents make these materials an ideal platform for the development of THz applications.

cond-mat.mes-hall↗

arXiv2021

HgTe quantum wells for QHE metrology under soft cryomagnetic conditions: permanent magnets and liquid ${^4He}$ temperatures

HgTe quantum wells with a thickness of ${\sim}$7 nm may have a graphene-like band structure and have been recently proposed to be potential candidates for quantum Hall effect (QHE) resistance standards under the condition of operation in the fields above certain critical field $B_c$, above which the topological phase (with parasitic edge conduction) disappears. We present experimental studies of the magnetoresistance of different of HgTe quantum wells as a function temperature and magnetic field, determining the critical magnetic field $B_c$. We demonstrate that for QWs of specific width $B_c$ becomes low enough to grant observation of remarkably wide QHE plateaus at the filling factor ${v=-1}$ (holes) in relaxed cryomagnetic conditions: while using commercial 0.82 T Neodymium permanent magnets and temperature of a few Kelvin provided by ${^4He}$ liquid system only. Band structure calculations allow us to explain qualitatively observed phenomena due to the interplay between light holes and heavy holes energy sub-bands (side maxima of the valence band). Our work clearly shows that the peculiar band structure properties of HgTe QWs with massless Dirac fermions make them an ideal platform for developing metrological devices with relaxed cryomagnetic conditions.

cond-mat.mes-hall↗

arXiv2021

Depinning of the Charge-Density Waves in Quasi-2D 1T-TaS2 Devices Operating at Room Temperature

We report on depinning of nearly-commensurate charge-density waves in 1T-TaS2 thin-films at room temperature. A combination of the differential current-voltage measurements with the low-frequency noise spectroscopy provide unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in electric current - in striking contrast to depinning in the conventional charge-density-wave materials with quasi-1D crystal structure. We explained it by the fact that the current density from the charge-density waves in the 1T-TaS2 devices is orders of magnitude smaller than the current density of the free carriers available in the discommensuration network surrounding the commensurate charge-density-wave islands. The depinning fields in 1T-TaS2 thin-film devices are several orders of magnitude larger than those in quasi-1D van der Waals materials. Obtained results are important for the proposed applications of the charge-density-wave devices in electronics.

cond-mat.mes-hall↗

arXiv2021

Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: manifestation of spin-orbit band splitting

We report on the study of the magnetic ratchet effect in AlGaN/GaN heterostructures superimposed with lateral superlattice formed by dual-grating gate structure. We demonstrate that irradiation of the superlattice with terahertz beam results in the dc ratchet current, which shows giant magneto-oscillations in the regime of Shubnikov de Haas oscillations. The oscillations have the same period and are in phase with the resistivity oscillations. Remarkably, their amplitude is greatly enhanced as compared to the ratchet current at zero magnetic field, and the envelope of these oscillations exhibits large beatings as a function of the magnetic field. We demonstrate that the beatings are caused by the spin-orbit splitting of the conduction band. We develop a theory which gives a good qualitative explanation of all experimental observations and allows us to extract the spin-orbit splitting constant \alpha_{\rm SO}= 7.5 \pm 1.5 meV \unicode{x212B}. We also discuss how our results are modified by plasmonic effects and show that these effects become more pronounced with decreasing the period of the gating gate structures down to sub-microns.

cond-mat.mes-hall↗

arXiv2020

Suppressed Auger scattering and tunable light emission of Landau-quantized massless Kane electrons

The Landau level laser has been proposed a long time ago as a unique source of monochromatic radiation, widely tunable in the THz and infrared spectral ranges using an externally applied magnetic field. In spite of decades of efforts, this appealing concept never resulted in the design of a reliable device. This is due to efficient Auger scattering of Landau-quantized electrons, which is an intrinsic non-radiative recombination channel that eventually gains over cyclotron emission in all materials studied so far: in conventional semiconductors with parabolic bands, but also in graphene with massless electrons. The Auger processes are favored in these systems by Landau levels (or their subsets) equally spaced in energy. Here we show that this scheme does not apply to massless Kane electrons in gapless HgCdTe alloy, in which undesirable Auger scattering is strongly suppressed and the sizeable cyclotron emission observed, for the first time in the case of massless particles. The gapless HgCdTe thus appears as a material of choice for future technology of Landau level lasers.

cond-mat.mes-hall↗

arXiv2020

Many-particle effects in optical transitions from zero-mode Landau levels in HgTe quantum wells

We report on the far-infrared magnetospectroscopy of HgTe quantum wells with inverted band ordering at different electron concentrations. We particularly focus on optical transitions from zero-mode Landau levels, which split from the edges of electron-like and hole-like bands. We observe a pronounced dependence of the transition energies on the electron concentration varied by persistent photoconductivity effect. This is striking evidence that in addition to the already well-documented crystalline and interface asymmetries, electron-electron interactions also have a significant impact on the usual behavior of the optical transitions from zero mode Landau levels.

cond-mat.mes-hall↗

arXiv2020

Terahertz Magnetospectroscopy of Cyclotron Resonances from Topological Surface States in Thick Films of Cd$_x$Hg$_{1-x}$Te

We present studies of the cyclotron resonance (CR) in thick Cd$_x$Hg$_{1-x}$Te films with different cadmium concentrations corresponding to inverted and normal band order, as well as to an almost linear energy dispersion. Our results demonstrate that formation of two-dimensional topological surface states requires sharp interfaces between layers with inverted and normal band order, in which case the corresponding CR is clearly observed for the out-of-plane orientation of magnetic field, but does not show up for an in-plane orientation. By contrast, all samples having more conventional technological design with smooth interfaces (i.e., containing regions of Cd$_x$Hg$_{1-x}$Te with gradually changing Cd content $x$) show equally pronounced CR in both in-plane and out-of-plane magnetic field revealing that CR is excited in three-dimensional states. Modeling of the surface states for different film designs supports our main observations. In all samples, we observe additional broad helicity-independent resonances which are attributed to photo-ionization and magnetic freeze-out of impurity states.

cond-mat.mes-hall↗

arXiv2019

Symmetry breaking and circular photogalvanic effect in epitaxial Cd$_x$Hg$_{1-x}$Te films

We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende crystals by symmetry arguments, therefore, its observation indicates either the symmetry reduction of bulk material or that the photocurrent is excited in the topological surface states formed in a material with low Cadmium concentration. We show that the bulk states play a crucial role because the CPGE was also clearly detected in samples with non-inverted band structure. We suggest that strain is a reason of the symmetry reduction. We develop a theory of the CPGE showing that the photocurrent results from the quantum interference of different pathways contributing to the free-carrier absorption (Drude-like) of monochromatic radiation.

cond-mat.mes-hall↗

arXiv2019

Massless Dirac fermions in III-V semiconductor quantum wells

We report on the clear evidence of massless Dirac fermions in two-dimensional system based on III-V semiconductors. Using a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well, we restore the Landau levels fan chart by magnetotransport and unequivocally demonstrate a gapless state in our sample. Measurements of cyclotron resonance at different electron concentrations directly indicate a linear band crossing at the $Γ$ point of Brillouin zone. Analysis of experimental data within analytical Dirac-like Hamiltonian allows us not only determing velocity $v_F=1.8\cdot10^5$ m/s of massless Dirac fermions but also demonstrating significant non-linear dispersion at high energies.

cond-mat.mes-hall↗