arXiv subjects

Vikram

Publications and source records attributed to Vikram.

6 recordsLinked to original sources

arXiv2025

Ligand Engineering for Precise Control of Ultrathin CsPbI3 Nanoplatelet Superlattices for Efficient Light-Emitting Diodes

Strongly-confined perovskite nanoplatelets (PeNPLs) offer opportunities not found in conventional isotropic nanocubes, especially in producing linearly polarized light, as well as enhancing outcoupling through control over the transition dipole moment. But this requires ultrathin nanoplatelets with three or fewer monolayers of PbI6 octahedra across the thickness, which are challenging to synthesise uniformly, and their luminescence is strongly affected by surface defects. Together, these limit the performance of ultrathin PeNPLs in light-emitting diodes (LEDs). Here, we address these challenges with an ancillary ligand engineering strategy. We demonstrate that ligands with phosphoryl functional groups strongly bind to the perovskite surface, while having an organic backbone that is not sterically bulky ensures high ligand density. By modulating nucleation and growth, these ancillary ligands lead to monodisperse PeNPLs that stack more uniformly when self-assembled into superlattices, with suppressed agglomeration. As a result, from edge-up PeNPL superlattices, we achieve enhanced degree of polarization, while from face-down PeNPL superlattices, we achieve enhanced outcoupling that results in LEDs with 13.1% external quantum efficiency, the highest reported for ultrathin PeNPL LEDs. This work establishes ancillary ligand-induced synthesis as a decisive route to achieve uniform nanoplatelets with robust orientation control, enabling full utilization of the multifunctionality of anisotropic PeNPLs.

physics.optics↗

arXiv2025

PINNs Algorithmic Framework for Simulation of Nonlinear Burgers' Type Models

In this work, a physics-informed neural networks (PINNs) based algorithm is used for simulation of nonlinear 1D and 2D Burgers' type models. This scheme relies on a neural network built to approximate the problem solution and use a trial function that meets the initial data and boundary criteria. First of all, a brief mathematical formulation of the problem and the structure of PINNs, including the neural network architecture, loss construction, and training methodology is described. Finally, the algorithm is demonstrated with five test problems involving variations of the 1D coupled, 2D single and 2D coupled Burgers' models. We compare the PINN-based solutions with exact results to assess accuracy and convergence of the developed algorithm. The results demonstrate that PINNs may faithfully replicate nonlinear PDE solutions and offer competitive performance in terms of inaccuracy and flexibility. This work demonstrates the potential of PINNs as a reliable approach to solving complex time-dependent PDEs.

cs.LG↗

arXiv2019

Accurate high-throughput screening of I-II-V 8-electron Half-Heusler compounds for renewable-energy applications

Renewable energy resources have emerged as the best alternatives to fossil fuel energy which are rapidly declining with time. Here, eight valence-electron count Half-Heusler(HH) alloys have been studied using reliable first principles calculations in the search of potential candidates for renewable energy applications like thermoelectric (TE), solar harvesting, topological insulator (TI) and transparent conductor (TC) applications. The initial screening parameters used for our study are chemical and thermal stability, band gap, nature of bandgap and band inversion strength. We have performed quasistatic G0W0 calculation starting from HSE groundstate wavefunction to predict the most accurate estimation of bandgap for these class of compounds. A total of 960 compounds were simulated. 121 out of 960 compounds were found to be thermally and chemically stable. 31 compounds with bandgap less than 1.5 eV were studied for thermoelectric application out of which 13 compounds were found to show thermoelectric figure of merit ZT > 0.7 for both p-type and n-type conduction. 30 compounds with band gap 1-1.8 eV were studied for optoelectronic application out of which 13 compounds were found to show Spectroscopic Limited Maximum Efficiency (SLME) more than 20%, comparable to existing state of the art materials. 21 compounds were found to show band inversion at ambient conditions which is a necessary condition for topological insulators. The surface band structure calculations for one of the promising candidate was done to check robustness of the topological behaviour. 29 compounds were found to have bandgap more than 2 eV which are promoted for transparent conductor applications with further band engineering. We strongly believe that our calculations will give useful insights to experimentalists for synthesizing and investigating proposed compounds for different energy applications.

cond-mat.mtrl-sci↗

arXiv2016

Bismuth based Half Heusler Alloys with giant thermoelectric figure of merit

Half Heusler (HH) thermoelectric alloys provide a wide platform to choose materials with non-toxic and earth abundant elements. This article presents an ab-initio theoretical evaluation of electrical and thermal transport properties of three Bismuth-based most promising thermoelectric alloys, selected out of 54 stable HH compounds. These are brand new compounds which are recently proposed to be stable (Nature Chem. 7, 308 (2015)) and may have interesting properties. The calculated band structure of the three compounds, namely HfRhBi, ZrIrBi and ZrRhBi, served as a hint for their promising thermoelectric properties. To gain confidence on the theoretical predictions of these unreported systems, we first checked our calculated results for a well studied similar compound, ZrNiSn, and showed reasonable agreement with the measured ones. HfRhBi and ZrIrBi turn out to be narrow band gap while ZrRhBi is a moderate band gap semiconductor. A detailed study of the carrier concentration and temperature dependance of the Seebeck coefficient (S), Power factor (S$^2 \sigma$), lattice ($\kappa_L$) and electronic ($\kappa_e$) thermal conductivity and hence the figure of merit (ZT) is carried out. In contrast to most promising known thermoelectric materials, we found high power factor for these materials (highest S$^2 \sigma\sim$17.36 mWm$^{-1}$K$^{-2}$ for p-type ZrIrBi). All the three systems (specially p-type) show high figure of merit, with ZT value as high as 0.45 for ideal crystal. Maximum ZT and the corresponding optimal n- and p-type doping concentrations ($n_c$) are calculated for all the three compounds, which shall certainly pave guidance to future experimental work.

cond-mat.mtrl-sci↗

arXiv2016

La-doped CH3NH3BaI3 : A Promising Transparent Conductor

Hybrid perovskites (CH3NH3PbI3) is one of the most promising novel materials for solar harvesting. Toxicity of lead (Pb), however, has always remained a concern. We investigated the electronic structure of complete replacement of Pb by alkaline earths (Ca, Sr, Ba) and found it to be wide band gapped (Eg) semiconductors (band gap ~ 3.7 to 4.0 eV), and hence not suitable as absorber material. This opens up a new avenue to explore these materials as transparent conductor (TC). We doped CH3NH3BaI3 (largest Eg) with La, which shifts its Fermi level (EF) at conduction band bottom and induces states at EF for conduction. This is precisely what is required for a transparent conductor. Optical and transport properties simulated from linear response (within Density Functional Theory (DFT)) calculations suggested it to be a very good TC material with a high figure of merit ({\sigma}/{\alpha}), where {\sigma} is the electrical conductivity and {\alpha} is the optical absorption coefficient. This claim is also supported by our calculated results on density of states at EF, effective mass, carrier concentration etc. at various La-doping. We propose CH3NH3(Ba1-xLax)I3 (x~12.5%) to be a good TC material to be used in a all perovskite solar cell.

cond-mat.mtrl-sci↗

arXiv2016

Crystal structure, stability and optoelectronic properties of the organic-inorganic wide bandgap perovskite CH3NH3BaI3: Candidate for transparent conductor applications

Structural stability, electronic structure and optical properties of CH3NH3BaI3 hybrid perovskite is examined both from theory as well as experiment. Solution-processed thin films of CH3NH3BaI3 exhibited a high band gap of approximately 3.87 eV, which is in excellent agreement with the theoretical estimate of 4 eV. Also, the XRD patterns of the thin films match well with the l-peaks of the simulated pattern obtained from the relaxed unit cell of CH3NH3BaI3, crystallizing in the I4/mcm space group, with lattice parameters, a = 9.30 A, c = 13.94 A. Atom projected density of state and band structure calculations reveal the conduction and valence band edges to be comprised primarily of Barium d-orbitals and Iodine p-orbitals, respectively. The larger band gap of CH3NH3BaI3 compared to CH3NH3PbI3 can be attributed to the lower electro-negativity coupled with the lack of d-orbitals in the valence band of Ba{2+}. A more detailed analysis reveals the excellent chemical and mechanical stability of CH3NH3BaI3 against humidity, unlike its lead halide counterpart, which degrades under such conditions. The dopability of the CH3NH3BaI3 compound e.g. by doping La on the Ba site combined with its structural and mechanical stability under the ambient conditions, suggests this compound as a promising candidate for transparent conductor applications, especially for all perovskite solar cells.

cond-mat.mtrl-sci↗