arXiv ScienceSearch

arXiv subjects

Valentin John

Publications and source records attributed to Valentin John.

11 recordsLinked to original sources

A Degenerate Singlet-Triplet Qubit with All-Electrical Orthogonal Control

Singlet-triplet qubits offer an attractive encoding for semiconductor quantum computing, combining ancilla-free readout, reduced sensitivity to common-mode noise, and baseband voltage control. However, the Zeeman energy difference $\Delta E_\mathrm{Z}$ is typically fixed by local magnetic field gradients or $g$-factor inhomogeneities, leaving the exchange interaction $J$ as the only dynamically tunable parameter. This always-on $\Delta E_\mathrm{Z}$ precludes orthogonal control of the qubit's rotation axes and introduces unwanted state rotations during idling. Here we demonstrate all-electrical orthogonal control of a degenerate singlet-triplet (DST) qubit formed by two hole spins in a germanium double quantum dot. Exploiting the electrically tunable anisotropic $g$-factors of the two spins, we identify a regime where both $\Delta E_\mathrm{Z}$ and $J$ vanish, making the $S$ and $T_0$ states degenerate at the idle point. By applying only baseband voltage pulses, we independently control both $J$ and $\Delta E_\mathrm{Z}$, enabling fully orthogonal $Z$- and $X$-axis rotations. Randomized benchmarking yields an average physical single-qubit gate fidelity of 99.53\% for a gate duration of approximately 100 ns. Finally, we electrically tune the degenerate point across a wide range of magnetic field orientations, enabling operation in a regime of enhanced coherence time and offering a route towards multi-qubit scaling under a shared global magnetic field.

cond-mat.mes-hall

Large quantum dot energy level shifts in anomalous photon-assisted tunneling

Orbital energy splittings are important quantum dot parameters for the operation of hole spin qubits. They are known to depend on the lateral confinement of the quantum dots. However, when changing top, plunger gate voltages, which are the typical control parameter for qubit applications, such energy splitting changes are typically negligible, both as measured in experiment and as assumed in effective theories. Here, we study the singlet-triplet (ST) splittings, which depend on the orbital splittings, of a double quantum dot (DQD) in a Ge/SiGe heterostructure using photon-assisted tunneling (PAT) and pulsed-gate spectroscopy. We find that the ST splittings have a surprising, strong dependence on the top gate voltages, leading to anomalous PAT measurements. We combine data from both measurements in a model that well describes the linear gate-voltage dependence of the ST splittings. Finally, we show that the ST splittings of the two dots exhibit similar linear gate-voltage dependences when the device is retuned such that their ratio is significantly different.

cond-mat.mes-hall

Towards autonomous time-calibration of large quantum-dot devices: Detection, real-time feedback, and noise spectroscopy

The performance and scalability of semiconductor quantum-dot (QD) qubits are limited by electrostatic drift and charge noise that shift operating points and destabilize qubit parameters. As systems expand to large one- and two-dimensional arrays, manual recalibration becomes impractical, creating a need for autonomous stabilization frameworks. Here, we introduce a method that uses the full network of charge-transition lines in repeatedly acquired double-quantum-dot charge stability diagrams (CSDs) as a multidimensional probe of the local electrostatic environment. By accurately tracking the motion of selected transitions in time, we detect voltage drifts, identify abrupt charge reconfigurations, and apply compensating updates to maintain stable operating conditions. We demonstrate our approach on a 10-QD device, showing robust stabilization and real-time diagnostic access to dot-specific noise processes. The high acquisition rate of radio-frequency reflectometry CSD measurements also enables time-domain noise spectroscopy, allowing the extraction of noise power spectral densities, the identification of two-level fluctuators, and the analysis of spatial noise correlations across the array. From our analysis, we find that the background noise at 100~$\mu$\si{\hertz} is dominated by drift with a power law of $1/f^2$, accompanied by a few dominant two-level fluctuators and an average linear correlation length of $(188 \pm 38)$~\si{\nano\meter} in the device. These capabilities form the basis of a scalable, autonomous calibration and characterization module for QD-based quantum processors, providing essential feedback for long-duration, high-fidelity qubit operations.

cond-mat.mes-hall

Optimising germanium hole spin qubits with a room-temperature magnet

Germanium spin qubits exhibit strong spin-orbit interaction, which allow for high-fidelity qubit control, but also provide a strong dependence on the magnetic field. Superconducting vector magnets are often used to minimize dephasing due to hyperfine interactions and to maximize spin control, but these compromise the sample space and thus challenge scalability. Here, we explore whether a permanent magnet outside the cryostat can be used as an alternative. Operating in a hybrid mode with an internal and external magnet, we find that we can fine-tune the magnetic field to an in-plane orientation. We obtain a qubit dephasing time T2*=13 microseconds, Hahn-echo times T2H=88 microseconds, and an average single-qubit Clifford gate fidelity above 99.9%, from which we conclude that room temperature magnets allow for high qubit performance. Furthermore, we probe the qubit resonance frequency using only the external magnet, with the internal superconducting magnet switched off. Our approach may be used to scale semiconductor qubits and use the increased sample space for the integration of cryogenic control circuitry and wiring to advance to large-scale quantum processors.

quant-ph

A two-dimensional 10-qubit array in germanium with robust and localised qubit control

Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for \textit{in situ} electric fast and high-fidelity qubit gates. However, the interaction also causes a large qubit variability due to strong g-tensor anisotropy and dependence on the environment. Here, we leverage advances in material growth, device fabrication, and qubit control to realise a two-dimensional 10-spin qubit array, with qubits coupled up to four neighbours that can be controlled with high fidelity. By exploring the large parameter space of gate voltages and quantum dot occupancies, we demonstrate that plunger gate driving in the three-hole occupation enhances electric-dipole spin resonance (EDSR), creating a highly localised qubit drive. Our findings, confirmed with analytical and numerical models, highlight the crucial role of intradot Coulomb interaction and magnetic field direction. Furthermore, the ability to engineer qubits for robust control is a key asset for further scaling.

cond-mat.mes-hall

A spinless spin qubit

All-electrical baseband control of qubits facilitates scaling up quantum processors by removing issues of crosstalk and heat generation. In semiconductor quantum dots, this is enabled by multi-spin qubit encodings, such as the exchange-only qubit, where high-fidelity readout and both single- and two-qubit operations have been demonstrated. However, their performance is limited by unavoidable leakage states that are energetically close to the computational subspace. In this work, we introduce an alternative, scalable spin qubit architecture that leverages strong spin-orbit interactions of hole nanostructures for baseband qubit operations while completely eliminating leakage channels and reducing the overall gate overhead. This encoding is intrinsically robust to local variability in hole spin properties and operates with two degenerate states, removing the need for precise calibration and mitigating heat generation from fast signal sources. Finally, our architecture is fully compatible with current technology, utilizing the same initialization, readout, and multi-qubit protocols of state-of-the-art spin-1/2 systems. By addressing critical scalability challenges, our design offers a robust and scalable pathway for semiconductor spin qubit technologies.

cond-mat.mes-hall

Modular Autonomous Virtualization System for Two-Dimensional Semiconductor Quantum Dot Arrays

Arrays of gate-defined semiconductor quantum dots are among the leading candidates for building scalable quantum processors. High-fidelity initialization, control, and readout of spin qubit registers require exquisite and targeted control over key Hamiltonian parameters that define the electrostatic environment. However, due to the tight gate pitch, capacitive crosstalk between gates hinders independent tuning of chemical potentials and interdot couplings. While virtual gates offer a practical solution, determining all the required cross-capacitance matrices accurately and efficiently in large quantum dot registers is an open challenge. Here, we establish a modular automated virtualization system (MAViS) -- a general and modular framework for autonomously constructing a complete stack of multilayer virtual gates in real time. Our method employs machine learning techniques to rapidly extract features from two-dimensional charge stability diagrams. We then utilize computer vision and regression models to self-consistently determine all relative capacitive couplings necessary for virtualizing plunger and barrier gates in both low- and high-tunnel-coupling regimes. Using MAViS, we successfully demonstrate accurate virtualization of a dense two-dimensional array comprising ten quantum dots defined in a high-quality Ge/SiGe heterostructure. Our work offers an elegant and practical solution for the efficient control of large-scale semiconductor quantum dot systems.

cond-mat.mes-hall

Exploiting epitaxial strained germanium for scaling low noise spin qubits at the micron-scale

Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here, we exploit low-disorder epitaxial strained quantum wells in Ge/SiGe heterostructures grown on Ge wafers to comprehensively probe the noise properties of complex micron-scale devices comprising of up to ten quantum dots and four rf-charge sensors arranged in a two-dimensional array. We demonstrate an average charge noise of $\sqrt{S_{0}}=0.3(1)$ $\mu\mathrm{eV}/\sqrt{\mathrm{Hz}}$ at 1 Hz across different locations on the wafer, providing a benchmark for quantum confined holes. We then establish hole-spin qubit control in these heterostructures and extend our investigation from electrical to magnetic noise through spin echo measurements. Exploiting dynamical decoupling sequences, we quantify the power spectral density components arising from the hyperfine interaction with $^{73}$Ge spinful isotopes and identify coherence modulations associated with the interaction with the $^{29}$Si nuclear spin bath near the Ge quantum well. We estimate an integrated hyperfine noise amplitude $\sigma_f$ of 180(8) kHz from $^{73}$Ge and of 47(5) kHz from $^{29}$Si, underscoring the need for full isotopic purification of the qubit host environment.

cond-mat.mes-hall

Operating semiconductor quantum processors with hopping spins

Qubits that can be efficiently controlled are essential for the development of scalable quantum hardware. While resonant control is used to execute high-fidelity quantum gates, the scalability is challenged by the integration of high-frequency oscillating signals, qubit crosstalk and heating. Here, we show that by engineering the hopping of spins between quantum dots with site-dependent spin quantization axis, quantum control can be established with discrete signals. We demonstrate hopping-based quantum logic and obtain single-qubit gate fidelities of 99.97\%, coherent shuttling fidelities of 99.992\% per hop, and a two-qubit gate fidelity of 99.3\%, corresponding to error rates that have been predicted to allow for quantum error correction. We also show that hopping spins constitute a tuning method by statistically mapping the coherence of a 10-quantum dot system. Our results show that dense quantum dot arrays with sparse occupation could be developed for efficient and high-connectivity qubit registers.

cond-mat.mes-hall

Bichromatic Rabi Control of Semiconductor Qubits

Electrically driven spin resonance is a powerful technique for controlling semiconductor spin qubits. However, it faces challenges in qubit addressability and off-resonance driving in larger systems. We demonstrate coherent bichromatic Rabi control of quantum dot hole spin qubits, offering a spatially selective approach for large qubit arrays. By applying simultaneous microwave bursts to different gate electrodes, we observe multichromatic resonance lines and resonance anticrossings that are caused by the ac Stark shift. Our theoretical framework aligns with experimental data, highlighting interdot motion as the dominant mechanism for bichromatic driving.

cond-mat.mes-hall

Shared control of a 16 semiconductor quantum dot crossbar array

The efficient control of a large number of qubits is one of most challenging aspects for practical quantum computing. Current approaches in solid-state quantum technology are based on brute-force methods, where each and every qubit requires at least one unique control line, an approach that will become unsustainable when scaling to the required millions of qubits. Here, inspired by random access architectures in classical electronics, we introduce the shared control of semiconductor quantum dots to efficiently operate a two-dimensional crossbar array in planar germanium. We tune the entire array, comprising 16 quantum dots, to the few-hole regime and, to isolate an unpaired spin per dot, we confine an odd number of holes in each site. Moving forward, we establish a method for the selective control of the quantum dots interdot coupling and achieve a tunnel coupling tunability over more than 10 GHz. The operation of a quantum electronic device with fewer control terminals than tunable experimental parameters represents a compelling step forward in the construction of scalable quantum technology.

cond-mat.mes-hall