V. Kateel | arXiv Science

arXiv2026

Impact of gate voltage on switching field of perpendicular magnetic tunnel junctions with a synthetic antiferromagnetic free layer

We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF) free layer, where the magnetic state of one sublayer is detected via tunneling magnetoresistance (TMR). Simulations reveal that local modulation of perpendicular magnetic anisotropy (PMA) in one SAF sublayer leads to distinct switching characteristics. The switching field varies linearly with the anisotropy field, indicating voltage-controlled magnetic anisotropy (VCMA)-dominated dynamics similar to single free-layer devices. We then experimentally study the magnetic switching field of MTJ devices with SAF free layers under applied gate voltage. By varying the MgO tunnel barrier thickness to systematically modulate the resistance-area (RA) product, we enable quantitative separation of spin-transfer torque (STT), VCMA, and Joule heating contributions. Our findings indicate that VCMA dominates in devices with a high RA product, while low-RA devices exhibit nonlinear switching behavior due to enhanced contributions from STT and Joule heating. Furthermore, the effective fields derived from STT, VCMA, and Joule heating contributions under various gate voltages show minimal dependence on device critical dimensions, indicating favorable scaling behavior. This work presents a unified framework analyzing the roles of STT, VCMA, and Joule heating in SAF-based voltage-gated spin-orbit torque (SOT) MRAM, offering key insights for the optimization of performance, energy efficiency, and scalability in SOT-MRAM technologies.

cond-mat.mes-hall↗

arXiv2021

Voltage-Gate Assisted Spin-Orbit Torque Magnetic Random Access Memory for High-Density and Low-Power Embedded Application

Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory (MRAM) applications. In this work, we give a complete description of VGSOT writing properties on perpendicular magnetic tunnel junction (pMTJ) devices, and we propose a detailed methodology for its electrical characterization. The impact of gate assistance on the SOT switching characteristics are investigated using electrical pulses down to 400ps. The VCMA coefficient ({\xi}) extracted from current switching scheme is found to be the same as that from the magnetic field switch method, which is in the order of 15fJ/Vm for the 80nm to 150nm devices. Moreover, as expected from the pure electronic VCMA effect, {\xi} is revealed to be independent of the writing speed and gate length. We observe that SOT switching current characteristics are modified linearly with gate voltage (V_g), similar as for the magnetic properties. We interpret this linear behavior as the direct modification of perpendicular magnetic anisotropy (PMA) and nucleation energy induced by VCMA. At V_g = 1V, the SOT write current is decreased by 25%, corresponding to a 45% reduction in total energy down to 30fJ/bit at 400ps speed for the 80nm devices used in this study. Further, the device-scaling criteria are proposed, and we reveal that VGSOT scheme is of great interest as it can mitigate the complex material requirements of achieving high SOT and VCMA parameters for scaled MTJs. Finally, how that VGSOT-MRAM can enable high-density arrays close to two terminal geometries, with high-speed performance and low-power operation, showing great potential for embedded memories as well as in-memory computing applications at advanced technology nodes.

cond-mat.mes-hall↗