arXiv subjects

V. Ferrando

Publications and source records attributed to V. Ferrando.

At least 19 recordsLinked to original sources

arXiv2008

Two-band parallel conductivity at terahertz frequencies in the superconducting state of MgB$_2$.

The optical response of the two-band superconductor MgB$_2$ has been studied in the 0.7-4 THz range on films with very low impurity level. The effect of the high-energy $σ$-gap is observed in the ratio $R_S/R_N$ between the normal and superconducting state reflectance, while in a neutron irradiated film with a slightly higher impurity level mainly the effect of the $π$-gap is evident as reported in previous experiments. At terahertz frequencies, the electrodynamic of MgB$_2$ can be well described by the two-band parallel conductivity model and is dominated by the $π$-bands when the impurity level is only slightly higher than that of an ultra-clean sample.

cond-mat.supr-con↗

arXiv2007

Probing the electron-phonon coupling in MgB2 through magnetoresistance measurements in neutron irradiated thin films

We report magnetoresistance (MR) measurements on MgB2 and the corresponding full account from ab-initio calculations; we suggest that this combination can be a useful tool to probe electron- phonon coupling. We obtain good quantitative agreement between high field measurements on neutron irradiated epitaxial thin films and calculations within Bloch-Boltzmann transport theory over a wide range of magnetic fields (0-28 T) and temperatures (40-300 K), and as a function of the field orientation. The crossovers between in-plane and out-of-plane MR, experimentally observed as a function of either disorder or temperature are well reproduced indicating that disorder and interaction with phonons strongly affect the scattering rate of s-carriers.

cond-mat.supr-con↗

arXiv2006

Systematic study of disorder induced by neutron irradiation in MgB2 thin films

The effects of neutron irradiation on normal state and superconducting properties of epitaxial magnesium diboride thin films are studied up to fluences of 1020 cm-2. All the properties of the films change systematically upon irradiation. Critical temperature is suppressed and, at the highest fluence, no superconducting transition is observed down to 1.8 K. Residual resistivity progressively increases from 1 to 190 microohmcm; c axis expands and then saturates at the highest damage level. We discuss the mechanism of damage through the comparison with other damage procedures. The normal state magnetoresistivity of selected samples measured up to high fields (28 and 45T) allows to determine unambiguously the scattering rates in each band; the crossover between the clean and dirty limit in each sample can be monitored. This set of samples, with controlled amount of disorder, is suitable to study the puzzling problem of critical field in magnesium diboride thin films. The measured critical field values are extremely high (of the order of 50T in the parallel direction at low fluences) and turns out to be rather independent on the experimental resistivity, at least at low fluences. A simple model to explain this phenomenology is presented.

cond-mat.supr-con↗

arXiv2006

Role of interband scattering in neutron irradiated MgB$_2$ thin films by Scanning Tunneling Spectroscopy measurements

A series of MgB$_2$ thin films systematically disordered by neutron irradiation have been studied by Scanning Tunneling Spectroscopy. The c-axis orientation of the films allowed a reliable determination of local density of state of the $\pi$ band. With increasing disorder, the conductance peak moves towards higher voltages and becomes lower and broader, indicating a monotonic increase of the $\pi$ gap and of the broadening parameter. These results are discussed in the frame of two-band superconductivity.

cond-mat.supr-con↗

arXiv2006

Effect of the four-sheet Fermi surface on magnetoresistivity of MgB2

Recent experimental data of anisotropic magnetoresistivity measured in MgB2 films have shown an intriguing behaviour: the angular dependence of magnetoresistivity changes dramatically with temperature and disorder. In order to explain such phenomenology, in this work, we extend our previous analyses on multiband transverse magnetoresistivity in magnesium diboride, by calculating its analytic expression, assuming a constant anisotropic Fermi surface mass tensor. The calculation is done for arbitrary orientation of the magnetic field with respect to the crystalline axes and for the current density either perpendicular or parallel to the magnetic field. This approach allows to extract quite univocally the values of the scattering times in the s- and p- bands by fitting experimental data with a simple analytic expression. We also extend the analysis to the magnetoresistivity of polycrystalline samples, with an arbitrary angle between the current density and the magnetic field, taking into account the anisotropy of each randomly oriented grain. Thereby, we propose magnetoresistivity as a very powerful characterization tool to explore the effect of disorder by irradiation or selective doping as well as of phonon scattering in each one of the two types of bands, in single crystals and polycrystalline samples, which is a crucial issue in the study of magnesium diboride.

cond-mat.supr-con↗

arXiv2006

Effects of neutron irradiation on polycrystalline Mg11B2

We studied the influence of the disorder introduced in polycrystalline MgB2 samples by neutron irradiation. To circumvent self shielding effects due to the strong interaction between thermal neutrons and 10B we employed isotopically enriched 11B which contains 40 times less 10B than natural B. The comparison of electrical and structural properties of different series of samples irradiated in different neutron sources, also using Cd shields, allowed us to conclude that, despite the low 10B content, the main damage mechanisms are caused by thermal neutrons, whereas fast neutrons play a minor role. Irradiation leads to an improvement in both upper critical field and critical current density for an exposure level in the range 1-2x1018 cm-2. With increasing fluence the superconducting properties are depressed. An in-depth analysis of the critical field and current density behaviour has been carried out to identify what scattering and pinning mechanisms come into play. Finally the correlation between some characteristic lengths and the transition widths is analysed.

cond-mat.supr-con↗

arXiv2005

Magnetoresistivity in MgB2 as a probe of disorder in p- and s-bands

In this paper we present normal state magnetoresistivity data of magnesium diboride epitaxial thin films with different levels of disorder, measured at 42K in magnetic fields up to 45 Tesla. Disorder was introduced in a controlled way either by means of neutron irradiation or by carbon doping. From a quantitative analysis of the magnetoresistivity curves with the magnetic field either parallel or perpendicular to the plane of the film, we extract the ratio of the scattering times in p- and s-bands. We demonstrate that the undoped unirradiated thin film has p scattering times smaller than s ones; upon irradiation, both bands become increasingly more disordered; eventually the highly irradiated sample (neutron fluence 7.7X1017 cm-2) and the C-doped sample have comparable scattering times in the two types of bands. This description of the effect of disorder in the two kinds of bands on transport is consistent with the residual resistivity values and with the temperature dependence of the resistivity.

cond-mat.supr-con↗

arXiv2004

Upper Critical Fields up to 60T in Dirty Magnesium Diboride Thin Films

Upper critical fields of several magnesium diboride thin films were measured up to 28 T at the Grenoble High Magnetic Field Laboratory (GHMFL) in Grenoble and up to 60 T at the Laboratoire National des Champs Magnetiques Pulses (LNCMP) in Toulouse. The samples were prepared both by pulsed laser deposition (PLD) and hybrid physical chemical vapour deposition (HPCVD) technique; they have critical temperatures between 29 and 39 K and normal state resistivities between 5 and 250 μohmcm; one of them has been intentionally doped with carbon. The measured critical fields were exceptionally high; we obtained the record value of 52 T at 4.2 K in the parallel orientation. In contrast with the BCS predictions, no saturation in Hc2 at low temperature was observed. Furthermore, films with a wide range of resistivity values showed similar critical fields, suggesting that in a two band system resistivity and Hc2 are not trivially linked. The high Hc2 values seem to be related with the expanded c-axis. The structure of one of the samples was carefully investigated with X-ray diffraction at European Synchrotron Radiation Facility (ESRF) in Grenoble.

cond-mat.supr-con↗

arXiv2004

Epitaxial MgB2 thin films on ZrB2 buffer layers: structural characterization by synchrotron radiation

Structural and superconducting properties of magnesium diboride thin films grown by pulsed laser deposition on zirconium diboride buffer layers were studied. We demonstrate that the ZrB2 layer is compatible with the MgB2 two step deposition process. Synchrotron radiation measurements, in particular anomalous diffraction measurements, allowed to separate MgB2 peaks from ZrB2 ones and revealed that both layers have a single in plane orientation with a sharp interface between them. Moreover, the buffer layer avoids oxygen contamination from the sapphire substrate. The critical temperature of this film is near 37.6 K and the upper critical field measured at Grenoble High Magnetic Field Laboratory up to 20.3 T is comparable with the highest ones reported in literature.

cond-mat.supr-con↗

arXiv2004

High-field superconductivity in alloyed MgB2 thin films

We investigated the effect of alloying on the upper critical field $H_{c2}$ in 12 $MgB_2$ films, in which disorder was introduced by growth, carbon doping or He-ion irradiation, finding a significant $H_{c2}$ enhancement in C-alloyed films, and an anomalous upward curvature of $H_{c2}(T)$. Record high values of $H_{c2}^{\perp}(4.2) \simeq 35T$ and $H_{c2}\|(4.2) \simeq 51T$ were observed perpendicular and parallel to the ab plane, respectively. The temperature dependence of $H_{c2}(T)$ is described well by a theory of dirty two-gap superconductivity. Extrapolation of the experimental data to T=0 suggests that $H_{c2}\|(0)$ approaches the paramagnetic limit of $\sim 70T$.

cond-mat.supr-con↗

arXiv2003

Effect of two bands on critical fields in MgB2 thin films with various resistivity values

Upper critical fields of four MgB2 thin films were measured up to 28 Tesla at Grenoble High Magnetic Field Laboratory. The films were grown by Pulsed Laser Deposition and showed critical temperatures ranging between 29.5 and 38.8 K and resistivities at 40 K varying from 5 to 50 mWcm. The critical fields in the perpendicular direction turned out to be in the 13-24 T range while they were estimated to be in 42-57 T the range in ab-planes. In contrast to the prediction of the BCS theory, we did not observe any saturation at low temperatures: a linear temperature dependence is exhibited even at lowest temperatures at which we made the measurements. Moreover, the critical field values seemed not to depend on the normal state resistivity value. In this paper, we analyze these data considering the multiband nature of superconductivity in MgB2 We will show how the scattering mechanisms that determine critical fields and resistivity can be different.

cond-mat.supr-con↗

arXiv2003

High critical fields in MgB2 thin films with various resistivity values

In this paper, we analyze the upper critical field of four MgB2 thin films, with different resistivity (between 5 to 50 mWcm) and critical temperature (between 29.5 to 38.8 K), measured up to 28 Tesla. In the perpendicular direction the critical fields vary from 13 to 24 T and we can estimate 42-57 T range in other direction. We observe linear temperature dependence even at low temperatures without saturation, in contrast to BCS theory. Considering the multiband nature of the superconductivity in MgB2, we conclude that two different scattering mechanisms influence separately resistivity and critical field. In this framework, resistivity values have been calculated from Hc2(T) curves and compared with the measured ones.

cond-mat.supr-con↗

arXiv2003

Point-Contact Spectroscopy in MgB_2: from Fundamental Physics to Thin-Film Characterization

In this paper we highlight the advantages of using point-contact spectroscopy (PCS) in multigap superconductors like MgB_2, both as a fundamental research tool and as a non-destructive diagnostic technique for the optimization of thin-film characteristics. We first present some results of crucial fundamental interest obtained by directional PCS in MgB_2 single crystals, for example the temperature dependence of the gaps and of the critical fields and the effect of a magnetic field on the gap amplitudes. Then, we show how PCS can provide useful information about the surface properties of MgB_2 thin films (e.g. Tc, gap amplitude(s), clean or dirty-limit conditions) in view of their optimization for the fabrication of tunnel and Josephson junctions for applications in superconducting electronics.

cond-mat.supr-con↗

arXiv2003

Pulsed Laser Deposition of epitaxial titanium diboride thin films

Epitaxial titanium diboride thin films have been deposited on sapphire substrates by Pulsed Laser Ablation technique. Structural properties of the films have been studied during the growth by Reflection High Energy Electron Diffraction (RHEED) and ex-situ by means of X-ray diffraction techniques; both kinds of measurements indicate a good crystallographic orientation of the TiB2 film both in plane and along the c axis. A flat surface has been observed by Atomic Force Microscopy imaging. Electrical resistivity at room temperature resulted to be five times higher than the value reported for single crystals. The films resulted to be also very stable at high temperature, which is very promising for using this material as a buffer layer in the growth of magnesium diboride thin films.

cond-mat.mtrl-sci↗

arXiv2003

Upper critical fields of MgB2 thin films

Critical fields of four MgB2 thin films with a normal state resistivity ranging from 5 to 50 mWcm and Tc from 29.5 to 38.8 K were measured up to 28 T. Hc2(T) curves present a linear behavior towards low temperatures. Very high critical field values have been found, up to 24 T along the c-axis and 57 T in the basal plane not depending on the normal state resistivity values. In this paper, critical fields will be analyzed taking into account the multiband nature of MgB2; we will show that resistivity and upper critical fields can be ascribed to different scattering mechanisms.

cond-mat.supr-con↗

arXiv2002

Angular dependence of magnetoresistivity in c-oriented MgB2 thin film

The anisotropy of MgB2 is still under debate: its value, strongly dependent on the sample and on the measuring method, ranges between 1.2 and 13. In this work we present our results on a MgB2 c-oriented superconducting thin film. To evaluate the anisotropy, we followed two different approaches. Firstly, magnetoresistivity was measured as a function of temperature at selected magnetic fields applied both parallel and perpendicular to the c-axis; secondly, we measured magnetoresistivity at selected temperatures and magnetic fields, varying the angle q between the magnetic field and the c-axis. The anisotropy estimated from the ratio between the upper critical fields parallel and perpendicular to the c-axis and the one obtained in the framework of the scaling approach within the anisotropic Ginzburg-Landau theory are different but show a similar trend in the temperature dependence. The obtained results are compared and discussed in the light of the two-band nature of MgB2. A comparison between critical fields in thin films and single crystal is also performed.

cond-mat.supr-con↗

arXiv2002

Growth methods of c-axis oriented MgB2 thin films by pulsed laser deposition

High quality MgB2 thin films have been obtained by pulsed laser deposition both on MgO and on Al2O3 substrates using different methods. In the standard two-step procedure, an amorphous precursor layer is deposited at room temperature starting both from stoichiometric target and from boron target: after this first step, it is annealed in magnesium atmosphere in order to crystallize the superconducting phase. The so obtained films show a strong c-axis orientation, evidenced by XRD analysis, a critical temperature up to 38 K and very high critical fields along the basal planes, up to 22T at 15K. Also an in situ one step technique for the realization of superconducting MgB2 thin films has been developed. In this case, the presence of an argon buffer gas during deposition is crucial and we observe a strong dependence of the quality of the deposited film on the background gas pressure. The influence of the Ar atmosphere has been confirmed by time and space-resolved spectroscopy measurements on the emission spectrum of the plume. The Ar pressure modifies strongly the plasma kinetics by promoting excitation and ionization of the plume species, especially of the most volatile Mg atoms, increasing their internal energy.

cond-mat.supr-con↗

arXiv2001

Anisotropy in c-oriented MgB2 thin films grown by Pulsed Laser Deposition

The electronic anisotropy in MgB2, is still a not completely clear topic; high quality c-oriented films are suitable systems to investigate this property. In this work we present our results on MgB2 superconducting thin films grown on MgO and sapphire substrates. The films are deposited in high vacuum, at room temperature, by Laser Ablation, starting from two different targets: pure Boron and stoichiometric MgB2. In both cases, to obtain and crystallize the superconducting phase, an ex-situ annealing in magnesium vapor is needed. The films were characterized by Synchrotron radiation diffraction measurements; the films turned out to be strongly c-oriented, with the c-axis perpendicular to the film surface and an influence of the substrate on crystallographic parameters is observed. Resisivity measurements with the magnetic field perpendicular and parallel directions to the film surface evidenced an anisotropic upper critical field behavior. The Hc2 ratios (h) resulted in the range 1.2-1.8; this difference will be discussed also in comparison with the literature data.

cond-mat.supr-con↗